• Proceedings of the Korean Vacuum Society Conference
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• 2011.02a
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• pp.261-262
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• 2011

본 연구는 HMDS/$O_2$/He/Ar의 gas mixture를 이용하여 remote-type의 DBD source를 통한 APPECVD를 통한 SiOx 양질의 무기막 증착 공정을 개발하였다. 이때 기판에 바이어스를 인가 하거나 혹은 접지를 하여 대기압 플라즈마의 환경 내에서도 바이어스 효과를 확인할 수 있도록 double discharge system을 구축하였다. 그리고 이 double discharge system의 다양한 특성과 기존의 전형적인 DBD와 비교 하였을 때 어떠한 차이점을 가지는지에 대해서도 관찰하였다. 그리하여 전형적인 DBD system과 double discharge를 통해 증착된 SiOx 무기막의 특성을 역시 비교 관찰하였다. Gas mixture 중 HMDS의 유량이 증가함에 따라, 그리고 $O_2$ gas의 유량이 감소함에 따라 SiOx 무기막의 증착률은 감소하였다. 그러나, SiOx 무기막 내의 불순물들, 예를 들어, carbon 혹은 hydrogen 계열의 chemical bond에 대한 정성적인 양은 HMDS 의 유량이 증가하거나 혹은 $O_2$ gas의 양이 감소함에 따라 오히려 증가함을 관찰할 수 있었다. 그리고 기판에 바이어스를 인가하는 double discharge system을 사용하였을 경우, 같은 HMDS, $O_2$ gas 유량을 사용한 전형적인 DBD type의 증착 공정 보다 더 높은 공정 효율을 나타냄과 동시에 더 낮은 불순물 함량을 가짐을 알 수 있었다. 이러한 double discharge system을 통해 증착된 양질의 SiOx 무기막이 증착 되었음을 FT-IR을 통한 막질 분석을 통해 확인 할 수 있었다. 이러한 double discharge system의 증착 공정에 대한 긍정적인 효과들은 atmospheric discharge의 효율 향상에 따른 gas dissociation efficiency 증가와 이를 통한 HMDS 분해 및 산소와의 recombination 효율의 증가에 따른 결과로 사료된다.

• Journal of the Korean Ceramic Society
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• v.41 no.4
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• pp.297-301
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• 2004

Nano-sized mullite (3Al$_2$O$_3$$.$2SiO$_2$) colloids were prepared by use of the spray combustion method. For combustion reaction, Al(NO$_3$)$_3$$.$9$H_2O$, and CH$_{6}$N$_4$O were used as an oxidizer and a fuel respectively, and then colloidal silica was also added as 2SiO$_2$source for mullite. The temperature of the reaction chamber was kept at 80$0^{\circ}C$ to initiate the ignition of droplets of the mixed precursors. For preventing droplet coagulation, the droplet number concentration was reduced using the metal screen filter, and the residence time of aerosol was kept at 2.5 seconds for laminar flow. The synthesized colloidal particles had an uniform spherical shape with 130 nanometer size and the crystalline phase showed the mullite with stoichiometry in the observations of XRD and TEM.

• Journal of the Korean Chemical Society
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• v.44 no.1
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• pp.52-59
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• 2000

The reaction gel mixtures of molar composition (0.3${\sim}$2.1) $SiO_2:\;(0.10{\sim}0.50)\;CTABr:\;0.15{\sim}0.23)\;TMAOH:\;(20{\sim}100)\;H_2O$ we prepared and then aged at room temperature for a definite duration. The aged gel is reacted hydrothermally at $150^{\circ}C$ for 2 days. The pH of reaction gel during synthesis is strongly influenced by the concentration of TMAOH and silica source. The pH change affects the phase of product, which is monitored by X-ray diffractometer. With increasing the TMAOH ratio from 0.19 to 0.23, the gel becomes more basic, and the product involves more lamellar phase. At TMAOH ratio lower than 0.19, the hexagonal phase is lower with decrease of pH. The content of the lamellar phase increases at a lower $SiO_2$ concentration, and higher concentrations have a clear detrimental effect on the crystallinity ofMCM-41 due to an excess silica source. The best quality MCM-41 is synthesized from a reaction gel composition of $1.0\;SiO_2:\;0.27\;CTABr:\;0.19\;TMAOH:\;40\;H_2O$. The pH values of this gel, aged one for 24 hr, and reacted one at $150^{\circ}C$ for 2 days are 12.3, 11.5, and 10.5, respectively. Gel aging for 24 h is essential for preparing high quality MCM-41. Longer aging causes a decrease of hexagonal phase.

• Proceedings of the IEEK Conference
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• 1999.06a
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• pp.942-945
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• 1999

In this work, we proposed Proper etching algorithm for ultra-large scale integrated circuit device and simulated etching process using the proposed algorithm in the case of ICP (inductive coupled plasma) 〔1〕source. Until now, many algorithms for etching process simulation have been proposed such as Cell remove algorithm, String algorithm and Ray algorithm. These algorithms have several drawbacks due to analytic function; these algorithms are not appropriate for sub 0.1 ${\mu}{\textrm}{m}$ device technologies which should deal with each ion. These algorithms could not present exactly straggle and interaction between Projectile ions and could not consider reflection effects due to interactions among next projectile ions, reflected ions and sputtering ions, simultaneously In order to apply ULSI process simulation, algorithm considering above mentioned interactions at the same time is needed. Proposed algorithm calculates interactions both in plasma source region and in target material region, and uses BCA (binary collision approximation4〕method when ion impact on target material surface. Proposed algorithm considers the interaction between source ions in sheath region (from Quartz region to substrate region). After the collision between target and ion, reflected ion collides next projectile ion or sputtered atoms. In ICP etching, because the main mechanism is sputtering, both SiO$_2$ and Si can be etched. Therefore, to obtain etching profiles, mask thickness and mask composition must be considered. Since we consider both SiO$_2$ etching and Si etching, it is possible to predict the thickness of SiO$_2$ for etching of ULSI.

• Journal of the Korean Ceramic Society
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• v.33 no.12
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• pp.1301-1310
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• 1996

Generally it requires high sintering temperatures more than 135$0^{\circ}C$ to make semiconductive BaTiO3 ceramics. Also it is very difficult to achieve a homogeneous mixing in solid-state reaction method. Therefore the liquid phase distributed to non-uniform dilute the characteristics of PTCR. In order to improve the uniformity this study is used the sol-gel coating method. Using this method we studied the new manufacturing process that had a high reproducibility and mass production capability. Tetraethyl orthosilicate (TEOS) was used as a source of Si. The semiconductive BaTiO3 ceramics which was produced by sol-gel method for the SiO2 addition and sintered between 124$0^{\circ}C$ and 130$0^{\circ}C$ showed almost same resistivity at room temperature among 125$0^{\circ}C$ and 130$0^{\circ}C$. As the results We could be sintered the semiconducting BaTiO3 ceramics at lower temperature even at 125$0^{\circ}C$ maintaining the same specific resistivity ratio ($\rho$max/$\rho$min) at 130$0^{\circ}C$. The specific resistivity both below and above the Curie temperature were increased by slow cooling and the steepness of the plots in the reasion of transition from low to high resistance increased as the cooling rate decreased.

• Bulletin of the Korean Chemical Society
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• v.28 no.4
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• pp.533-537
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• 2007

This paper describes the heteroepitaxial growth of single-crystalline 3C-SiC (cubic silicon carbide) thin films on Si (100) wafers by atmospheric pressure chemical vapor deposition (APCVD) at 1350 oC for micro/nanoelectromechanical system (M/NEMS) applications, in which hexamethyldisilane (HMDS, Si2(CH3)6) was used as a safe organosilane single-source precursor. The HMDS flow rate was 0.5 sccm and the H2 carrier gas flow rate was 2.5 slm. The HMDS flow rate was important in obtaing a mirror-like crystalline surface. The growth rate of the 3C-SiC film in this work was 4.3 μm/h. A 3C-SiC epitaxial film grown on the Si (100) substrate was characterized by X-ray diffraction (XRD), transmission electron microscopy (TEM), reflection high energy electron diffraction (RHEED), atomic force microscopy (AFM), X-ray photoelectron spectroscopy (XPS) and Raman scattering, respectively. These results show that the main chemical components of the grown film were single-crystalline 3C-SiC layers. The 3C-SiC film had a very good crystal quality without twins, defects or dislocations, and a very low residual stress.

• Korean Journal of Materials Research
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• v.7 no.1
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• pp.33-39
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• 1997

Single phase pero~~skite lead lanthanum titanate thin films were fabricated on $Pt/Ti/SiO_2/Si$ substrates at the temperature of $480^{\circ}C$ by electron cyclotron resonance plasma-enhanced chemical vapor deposition (ECR PECVD) using metal organic sources $Pb(DPM)_2$ pre-flowing treatment in ECIi oxygen plasma before fabricating PLT films 11romote the perovskite nucleation due to stable supplying of the $Pb(DPM)_2$ and providing the F'h-rich atmosphere in the early stage of deposition. $Pb(DPM)_2$ pie-flonring treatment enhanced the properties of PLT films. The charactcristics of the PLT filrris were investigated as a tunction of the flow rate of Ti-source. The PL'i' films were grown in a perovskite structure tvith (100) preferred orientation. The high X-ray diffraction intensity and dielectric constant were obtained from the stoichiometric perovskite $(Pb,La)TiO_3$.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.13 no.1
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• pp.36-40
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• 2003

The diamond-like nanocomposite (DLN) thin films were deposited on Si substrates using $CH_4/(C_2H_5O)_4Si/H_2$/Ar gas mixtures as source gases by the plasma enhanced chemical vapor deposition (PECVD). The chemical structure and microstructure of grown films were investigated and their tribological properties were evaluated by a ball-on-plate type tribometer. The deposited DLN films mainly consisted of diamond-like a-C:H and quartz-like a-Si:O networks. The DLN films had a good agreement with tribological coating applications due to their extremely low friction coefficients and low wear rates.

• Journal of the Korea Concrete Institute
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• v.18 no.5 s.95
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• pp.687-693
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• 2006

The Stone Powder Sludge(below SPS) is the by-product from the process that translates stone power of 8mm under as crushed fine aggregate. It is the sludge as like cake that has average particle size of $7{\mu}m$, absorbing water content of 20 to 60%, and $SiO_2$ content of 60% over. Because of high water content of SPS, it is not only difficult to handle, transport, and recycle, but also makes worse the economical efficiency due to high energy consuming to drying. This study is aim to recycle SPS as it is without drying. Target product is the lightweight foamed concrete that is made from the slurry mixed with pulverized mineral compounds and foams through hydro-thermal reaction of CaO and $SiO_2$. Although in the commercial lightweight foamed concrete CaO source is the cement and $SiO_2$ source is high purity silica powder with $SiO_2$ of 90%, we tried to use the SPS as $SiO_2$ source. From the experiments with factors such as foam addition rate and replacement proportion of SPS, we find that the lightweight foamed concrete with SPS shows the same trends as the density and strength of lightweight foamed concrete increases according to decrease of foam addition rate. But in the same condition, the lightweight foamed concrete with SPS is superior strength and density to that with high purity silica. This trends is distinguished according to increase of replacement proportion of SPS, also the analysis of XRF shows that the hydro thermal reaction translates SPS to tobermorite. Although SPS has low $SiO_2$ contents, the lightweight foamed concrete with SPS has superior strength and density, because it reacts well with CaO due to extremely fine particles. We conclude that it is possible to replace the high purity silica as SPS in the lightweight foamed concrete experimentally.

• Journal of the Korean Ceramic Society
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• v.25 no.6
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• pp.685-693
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• 1988

From leaching of Korean native halloysite with hot sulfuric acid, active species of siliceous aluminosilicate are obtained as residue, which gives the mole ratio of SiO2/Al2O3 10 and substantially removes most acid-soluble impurities. By dissolving the residue in sodium hydroxide at an ambient temperature sodium silicate solution is prepared, this is used for zeolite synthesis as one of starting materials. In order to prepare zeolite Type 4A thereform, addition of a proper aluminum source is made so that the composition of the reactant materials may be of the following mole ratios : Na2O/SiO2=1.2-1.5, SiO2/Al2O3=1.8-2.0 and H2O/Na2O=34-45 By careful control of ageing time and temperature, subsequent crystal growth is induced into microfine zeolite 4A, which gives optimum particle size distributjion being suitable for detergent builder. The zeolite products thus obtained and highly competitive with those from the use of the refined clay in comparison of their calcium exchange capacity, whiteness and particle size distribution. The present method shows a marginal advantage over the existing procedures requiring neitherseparate purification nor calcinating otherwise necessary for the raw clay ores in use.