• Horticultural Science & Technology
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• v.31 no.5
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• pp.544-551
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• 2013

The effect of different silicon (Si) sources and methods of application on the growth of two chrysanthemum cultivars grown in a soilless substrate was investigated. Rooted terminal cuttings of Dendranthema grandiflorum 'Lemmon Eye' and 'Pink Eye' were transplanted into pots containing a coir-based substrate. A nutrient solution containing 0 or $50mg{\cdot}L^{-1}$ Si from calcium silicate ($CaSiO_3$), potassium silicate ($K_2SiO_3$) or sodium silicate ($Na_2SiO_3$) was supplied once a day through an ebb-and-flood sub irrigation system. A foliar spray of 0 or $50mg{\cdot}L^{-1}$ Si was applied twice a week. Cultivar and application method had a significant effect on plant height. Cultivar, application method, and Si source had a significant effect on plant width. Of the three Si sources studied, $K_2SiO_3$ was found to be the best for the increasing number of flowers, followed by $CaSiO_3$ and $Na_2SiO_3$. In both the cultivars, sub irrigational supply of Si developed necrotic lesions in the older leaves at the beginning of the flowering stage as compared to the control and foliar spray of Si. Cultivar, application method, Si source, and their interactions had significant influence on leaf tissue concentrations of calcium (Ca), potassium (K), phosphorus (P), magnesium (Mg), sulfur (S), sodium (Na), boron (B), iron (Fe), and zinc (Zn). The addition of Si to the nutrient solution decreased leaf tissue concentrations of Ca, Mg, S, Na, B, Cu, Fe, and Mn in both cultivars. The greatest Si concentration in leaf tissue was found in 'Lemmon Eye' ($1420{\mu}g{\cdot}g^{-1}$) and 'Pink Eye' ($1683{\mu}g{\cdot}g^{-1}$) when $K_2SiO_3$ was applied through a sub irrigation system and by foliar spray, respectively.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2007.11a
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• pp.157-158
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• 2007

Effects of post-metallization anneal (PMA) on interface trap characteristics of Si-$SiO_2$ are studied. The conventional PMA method utilizes forming gas anneal, where 10% hydrogen in nitrogen atmosphere is used. A new PMA method utilizes hydrogen rich PECVD- silicon nitride $(SiN_x)$ film as a hydrogen diffusion source and a out-diffusion blocking layer. It can be shown through charge pumping current measurement that the new PMA is indeed effective to decrease Si-$SiO_2$ interface trap density.

• 한국정보디스플레이학회:학술대회논문집
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• 2004.08a
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• pp.223-226
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• 2004

MgO thin films were deposited bye-beam evaporation on $SiO_2$/Si wafers for the application of a protective layer in alternating current plasma display panels (AC-PDPs). Three different MgO sources, single crystal, melted polycrystal and sintered polycrystal, were used to find out the change of the properties of MgO protective layer depending on the source type. The properties of MgO thin films such as density, orientation and surface morphology were influenced by the source type. MgO thin films deposited with the melted polycrystal source had the highest density with the highest (100) preferred orientation, whereas the films deposited with the sintered polycrystal source had the lowest density with less preferred orientation. Such a result seems to be originated from the different mobility of adatoms on the surface of the deposited MgO thin films. Different microstructures of MgO thin films deposited even in the same deposition condition were observed depending on the MgO source type, resulting in different discharge characteristics.

• Horticultural Science & Technology
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• v.30 no.3
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• pp.250-255
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• 2012

The effect of different source silicon ($CaSiO_3$, $K_2SiO_3$, and $NaSiO_3$) and their application methods (foliar application and subirrigation) on the growth of potted kalanchoe was investigated. Rooted terminal cuttings of Kalanchoe blossfeldiana 'Peperu' were transplanted into 10.5 cm plastic pots containing a commercial growing medium. Then, a nutrient solution, containing 0 or $50mg{\cdot}L^{-1}$ Si as $K_2SiO_3$, $Na_2SiO_3$, or $CaSiO_3$ and adjusted to EC 1.4-$1.6mS{\cdot}cm^{-1}$ and pH 6.0, was supplied through subirrigation along with the nutrient solution or by a foliar application. Plants were grown in a glasshouse under a mean temperature of $23^{\circ}C$ and RH of 70-80%. After 12 weeks of cultivation, plant growth characteristics and leaf tissue contents of P, K, Ca, Mg, Na, S, and Si were measured. Both subirrigational supply and foliar application of Si decreased the plant height and flower stem length. However, the plant condition in the foliar application resulted in disease-like soft rot on the leaf. Among three silicon sources tested, $CaSiO_3$ supplied through a subirrigation system increased shoot tissue contents of Si and chlorophyll as compared to the $Na_2SiO_3$ or $K_2SiO_3$ treatment. Shoot tissue contents of Ca, K, and Na increased when the plant was supplied with $CaSiO_3$, $K_2SiO_3$, and $Na_2SiO_3$, respectively. Subirrigational supply of $K_2SiO_3$ and $NaSiO_3$ decreased the shoot tissue contents of Ca and Mg, and K and Ca, respectively. Therefore, $CaSiO_3$ supplied through a subirrigation system could improve plant quality of kalanchoe 'Peperu' making compact potted plants.

• Proceedings of the Korean Institute of Surface Engineering Conference
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• 2012.11a
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• pp.186-186
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• 2012

최근 Flexible organic electronics 분야에 대한 관심과 더불어 소자의 산소 및 수분의 침투를 방지하기 위한 투습방지막 연구가 활발히 진행되고 있다. 이에 본 연구에서는 Closed Drift Linear Source(CDLPS) 플라즈마 공정을 이용하여 저온 고속의 $SiO_xC_yH_z$ barrier flims 형성 연구를 진행하였다. HMDSO(hexamethyldisiloxane), TMS(trimethylsilane)와 산소를 기반으로 HMDSO/HMDSO+산소의 비율에 따라 $Si(-O_x)$ 변화에 따른 특성 평가를 진행하였다. X-ray photoelectrom spectroscopy(XPS) 및 Ft-IR spectrometer 측정 시 3.7% 비율에서 실리콘 원소가 산소 라디칼과 효율적인 반응을 함으로써 단일한 $SiO_2$ 박막이 형성됨을 확인 하였다. 그와 반면에 비율의 증가로 인해 다량의 HMDSO 물질이 주입 되었을 시 산소 라디칼과 충분히 반응 되지 못하여 $SiO_2$에 비해 $Si(CH)_x$ 가 많이 함량 된 Polymer like한 $SiO_x$가 많이 형성되었다. 박막의 증착율의 경우에는 3.7%에서 18%로 증가함에 따라 35 nm/min에서 180 nm/min의 증착율을 가지는 것을 확인 하였다. 3.7% 비율의 단일 $SiO_2$ 공정 조건으로 유기태양전지에 형성 하였을 시 소자의 에너지 변환 효율(PCE)이 변화 없는 것을 확인하였다. 이는 기존 공정에 비해 CDLPS 플라즈마 공정의 경우 유기소자에 플라즈마로 인한 열에너지나 이온 충격 에너지로 인한 영향 없는 것을 확인 할 수 있다. 이런 장점을 통해 CDSPS를 이용한 공정 기술은 다양한 유기 소자의 barrier 형성 연구에 큰 도움이 될 것이다.

• The Bulletin of The Korean Astronomical Society
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• v.37 no.2
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• pp.237.2-237.2
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• 2012

We performed simultaneous observations of SiO v=1, 2, $^{29}SiO$ v=0, J=1-0 and $H_2O$ $6_{16}-5_{23}$ maser lines toward 132 AGB and 183 post-AGB stars in order to investigate how evolutionary characteristics from AGB to post-AGB stars appear in these two maser emissions. The observations were carried out from 2011 February to 2012 March using the Korean VLBI Network 21-m radio telescopes. We have detected SiO and/or $H_2O$ maser emission from 29 sources out of 183 post-AGB stars including 19 new detections. Of 132 AGB stars which are mainly selected based on the IRAS Point Source Catalog, we detected SiO and/or $H_2O$ maser emission from 38 stars including 18 newly detected sources. An evolutionary characteristic from AGB to post-AGB stars is discussed in IRAS two-color diagram. It is found that SiO v=2, J=1-0 maser emission without SiO v=1 maser detections was detected from 8 sources among 21 SiO detected post-AGB stars and the intensity of SiO v=2, J=1-0 maser tends to be much stronger than that of SiO v=1. We also found that for the post-AGB stars the maser detection rate of blue group sources (which have higher outflow velocities than red group) are higher than that of red group. Especially, only $H_2O$ maser emission was detected from 7 sources among 94 red group sources without SiO maser detections.

• Journal of the Korean Vacuum Society
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• v.19 no.2
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• pp.148-154
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• 2010

We have fabricated $SiO_2$ oxidation thin films by TCP-CVD (transformer coupled plasma chemical vapor deposition) method for passivation layer of OLED (organic light emitting diode). The purpose of this paper is to control and estimate the deposition rate and refracive index characteristics with process parameters. They are power, gas condition, distance of source and substrate and process temperature. The results show that transmittance of thin films is over 90%, rapid deposition rate and stable reflective index from 1.4 to 1.5 at controled process conditions. They are $SiH_4$ : $O_2$ = 30 : 60 [sccm] gas condition, 70 [mm] distance of source and substrate, no-biased substrate and under 80 [$^{\circ}C$] process temperature.

• New Physics: Sae Mulli
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• v.68 no.11
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• pp.1196-1202
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• 2018

$Li_2Sr_{1-x}Eu_xSiO_{4-{\alpha}}N_{\alpha}$ ($Li_2SrSiO_{4-{\alpha}}N_{\alpha}:Eu^{2+}$) phosphors were synthesized by using a solid state reaction (SSR) method with submicron $Si_3N_4$ and nano $Si_3N_4$ powders as the sources of Si and N, and the optical properties of those phosphors were studied. The studied phosphors showed efficient excitation characteristics over the broad range from 230 to 530 nm. Also, They showed broad emission spectra covering a range from 500 to 700 nm, with a peak at 568 nm, which was shifted longer wavelength by 18 nm as compared with that of commercial $YAG:Ce^{3+}$. Combined with a 450 nm blue LED chip, the results support the application of the $Li_2SrSiO_{4-{\alpha}}N_{\alpha}:Eu^{2+}$ phosphor as a luminescent material for a white-light source thaat is warmer than the commercial $YAG:Ce^{3+}$ white-light source. In addition, the $Li_2SrSiO_{4-{\alpha}}N_{\alpha}$ phosphors prepared from a submicron $Si_3N_4$ powder was found to emit a previously unreported self-activated luminescence in $Li_2SrSiO_{4-{\alpha}}N_{\alpha}$.

• The Bulletin of The Korean Astronomical Society
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• v.41 no.1
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• pp.43.1-43.1
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• 2016

With the Korean VLBI Network (KVN), both single dish and VLBI monitoring observations of H2O and SiO masers were performed toward the semi-regular variable star R Crateris. In the case of 11 VLBI monitoring observations from Jan. 5, 2014 to Jan. 7, 2016, successful superposed maps of H2O and SiO masers were obtained at 7 epochs by adopting the Source Frequency Phase Referencing (SFPR) method. These results enable us to investigate the development of outflow and asymmetric motions from SiO maser to H2O maser regions according to stellar pulsation which are closely related with a mass-loss process. Single dish monitoring observations of H2O and SiO masers were also carried out from 2009 June to 2016 Feb. Intensity variations between H2O and SiO masers were investigated according to stellar optical phases together with peak velocity variations with respect to the stellar velocity. We will compare the VLBI results among different maser transitions with those of single dish.

• Applied Chemistry for Engineering
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• v.10 no.7
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• pp.985-989
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• 1999

Silica($SiO_2$) thin film was synthesized by a low pressure metal organic chemical vapor deposition(LPMOCVD) using organic silane compound. Triethyl orthosilicate was used as a source material. Operation pressure was 1~100 torr at outlet of the reactor and deposition temperature was $600{\sim}900^{\circ}C$. The experimental results showed that the high reaction temperature and high source gas concentration led to higher growth rate of $SiO_2$. The step coverage of films on micro-scale trenches was fairly good, which resulted from the phenomena that the condensed oligomers flow into the trenches. We estimated a reaction path that the source gas polymerizes and produces oligomers (dimer, trimer, tetramer, etc.), which diffuse and condense on the solid surface. The chemical species in the gas phase at the outlet of reactor tube were analyzed by quadrapole mass spectrometer. The peaks, assigned to be monomer, dimer of source gas and geavier molecules, were observed at 650 or $700^{\circ}C$. At higher temperature($900^{\circ}C$), the peaks of the heavy molecules disappeared, because almost all the source gas and intermediate(polymerized oligomer) molecules were oxidized or condensed on colder tube wall.