• Journal of Korean Society for Atmospheric Environment
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• v.20 no.3
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• pp.317-330
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• 2004

The Purpose of this study was to develop the P $M_{2.5}$ source Profiles, which are mass abundances (fraction of total mass) of a chemical species in P $M_{2.5}$ source emissions. The source categories studied were soil, road dust, gasoline and diesel vehicles, industrial source, municipal incinerator, coal-fired power plant, biomass burning, and marine. The chemicals analyzed were ions. elements. and carbons. From this study, soil source had the crustal components such as Si, hi, and Fe. In the case of road dust. Si, OC, Ca, Fe had large abundances. The abundant species were S $O_4$$^{2-}$, C $l^{[-10]}$ , N $H_4$$^{+}$, and EC in the gasoline vehicle and EC, OC, C $l^{[-10]}$ , and S $O_4$$^{2-}$ in the diesel vehicle. The main components were S $O_4$$^{2-}$, S N $H_4$$^{+}$, and EC in the industrial source using bunker C oil as fuel, C $l^{[-10]}$ , N $H_4$$^{+}$, Fe, and OC in the municipal incinerator source, and Si, Al, S $O_4$$^{2-}$, and OC in the coal -fired power plant source. In the case of biomass burning, OC, EC, and C $l^{[-10]}$ were mainly emitted. The main components in marine were C $l^{[-10]}$ , N $a^{+}$, and S $O_4$$^{2-}$.EX> 2-/.

• 한국신재생에너지학회:학술대회논문집
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• 2010.06a
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• pp.114.1-114.1
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• 2010

Fe계 촉매는 FT(Fischer-Tropsch) 합성반응에 매우 유망한 촉매로 주목받고 있으며, $280^{\circ}C$ 미만의 저온 FT 합성반응의 경우, 침전법이 Fe계 촉매의 가장 전형적인 제조방법으로 알려져 있다. Fe계 촉매에 첨가되는 조촉매로는 Cu, K, $SiO_2$ 등이 가장 대표적이며, 이 중에서 특히 구조 조촉매로 첨가되는 $SiO_2$는 Fe계 촉매의 기계적 강도를 향상시킬 뿐만 아니라, 촉매의 성능에도 크게 영향을 미치는 것으로 보고되고 있다. 본 연구에서는 침전법을 이용하여 저온 FT 합성반응용 Fe계 촉매를 제조하였고, 구조 조촉매로 첨가한 $SiO_2$의 원료물질에 따른 Fe계 촉매의 성능변화를 조사하였다. $SiO_2$의 원료물질로는 콜로이드 $SiO_2$와 분말 $SiO_2$를 이용하였으며, 분말 $SiO_2$를 이용한 촉매가 콜로이드 $SiO_2$를 이용한 촉매보다 다소 높은 CO 전환율 및 중질탄화수소 선택도를 나타내는 것을 확인하였다.

• Journal of the Korean Vacuum Society
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• v.7 no.s1
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• pp.106-117
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• 1998

Fluorocarbonated-SiO2 films were deposited on p-type Si(100) substrate using FSi$(OC_2H_5)_3$ (FTES), and $O_2$ mixture gases by a helicon plasms source. High density $O_2$/FTES/Ar plasma of ~$10^{12} \textrm{cm}^{-3}$ is obtained at low pressure (<3mTorr) with RF power above 900 W in the helicon plasma source. Optical emission spectroscopy (OES) is used to study the relation between the relative densities of the radicals and the film properties. The FTES and $O_2$ gases are greatly dissociated at the helicon mode that is launched at the above threshold plasma density. FTIR and XPS spectra shows that the film has Si-F, and C-F bonds during the formation process of the film which may lower the dielectric constant greatly. The relative dielectric constant, leakage current density, and dielectric breakdown voltage are about 2.8, $8\times10^{-9}\textrm{A/cm}^2$, and > 12 MV/cm, respectively.

• Korean Journal of Materials Research
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• v.12 no.1
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• pp.48-53
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• 2002

$Al_2O_3-SiC$ and $Al_2O_3-SiC$-TiC composite powders were prepared by SHS process using $SiO_2,\;TiO_2$, Al and C as raw materials. Aluminum powder was used as reducing agent of $SiO_2,\;TiO_2$ and activated charcoal was used as carbon source. In the preparations of $Al_2O_3-SiC$, the effect of the molar ratio in raw materials, compaction pressure, preheating temperature and atmosphere were investigated. The most important variable affecting the synthesis of $Al_2O_3-SiC$ was the molar ratio of carbon. Unreactants remained in the product among all conditions without compaction. The optimum condition in this reaction was $SiO_2$: Al: C=3: 5: 5.5, 80MPa compaction pressure under Preheating of $400^{\circ}C$ with Ar atmosphere. However there remains cabon in the optimum condition. The effect of $TiO_2$ as additive was investigated in the preparations of $Al_2O_3-SiC$. As a result of $TiO_2$ addition, $Al_2O_3-SiC$-TiC composite powder was prepared. The $Al_2O_3$ powder showed an angular type with 8 to $15{\mu}m$, and the particle size of SiC powder were 5~$10{\mu}m$ and TiC powder were 2 to $5{\mu}m$.

• Analytical Science and Technology
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• v.6 no.3
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• pp.275-282
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• 1993

A direct and simultaneous method to determine the $SiO_2$ and $ZrO_2$ in zircon sand of raw mineral and its treated one were studied by optical emission spectrometer using DC arc source. The synthetic standard was prepared by mixing with pure metal oxide, and it was diluted with buffer(graphite) and flux($Li_2B_4O_7$). The mixing ratio of buffer and flux and its dilution ratio to sample was investigated in order to choose the best excitation conditions. The optimum mixing and dilution ratios were 0.22:1 and 40, and the standard deviations of analytical results were 1.9% for $SiO_2$ and 4.7% for $ZrO_2$.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2005.11a
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• pp.295-296
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• 2005

Poly-Silicon Thin Film Transistor 응용을 위한 $SiO_2$ 박막 성장에 관한 연구로서 기존의 ICP-CVD를 이용한 실험에서 $SiH_4$ 가스대신 유기 사일렌 반응물질인 TEOS(TetraethylOrthosilicate) Source를 이용하여 APCVD 법으로 성장시켰다. $SiO_2$ 박막은 반도체 및 디스플레이 분야에서 필드산화막, 보호막, 게이트 절연막 등으로 사용되며, 이러한 산화막 증착을 TEOS를 이용하였고, 빠른 증착과 더 좋은 특성을 갖는 박막 형성을 위하여 $O_2$ 반응가스를 이용하였고, Ellipsometor, XPS 등을 이용하여 계면 특성 분석을 하였다.

• Proceedings of the Korean Vacuum Society Conference
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• 2010.08a
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• pp.255-255
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• 2010

Recently, nonvolatile memories (NVM) of various types have been researched to improve the electrical performance such as program/erase voltages, speed and retention times. Also, the charge trap memory is a strong candidate to realize the ultra dense 20-nm scale NVM. Furthermore, the high charge efficiency and the thermal stability of SiC nanocrystals NVM with single $SiO_2$ tunnel barrier have been reported. [1-2] In this study, the SiC charge trap NVM was fabricated and electrical properties were characterized. The 100-nm thick Poly-Si layer was deposited to confined source/drain region by using low-pressure chemical vapor deposition (LP-CVD). After etching and lithography process for fabricate the gate region, the $Si_3N_4/SiO_2/Si_3N_4$ (NON) and $SiO_2/Si_3N_4/SiO_2$ (ONO) barrier engineered tunnel layer were deposited by using LP-CVD. The equivalent oxide thickness of NON and ONO tunnel layer are 5.2 nm and 5.6 nm, respectively. By using ultra-high vacuum magnetron sputtering with base pressure 3x10-10 Torr, the 2-nm SiC and 20-nm $SiO_2$ were successively deposited on ONO and NON tunnel layers. Finally, after deposited 200-nm thick Al layer, the source, drain and gate areas were defined by using reactive-ion etching and photolithography. The lengths of squire gate are $2\;{\mu}m$, $5\;{\mu}m$ and $10\;{\mu}m$. The electrical properties of devices were measured by using a HP 4156A precision semiconductor parameter analyzer, E4980A LCR capacitor meter and an Agilent 81104A pulse pattern generator system. The electrical characteristics such as the memory effect, program/erase speeds, operation voltages, and retention time of SiC charge trap memory device with barrier engineered tunnel layer will be discussed.

• Korean Journal of Materials Research
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• v.28 no.1
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• pp.6-11
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• 2018

There are various manufacturing processes for pure $SiO_2$ that is used as abrasives, chemicals, filters, and glasses, and in metallurgy and optical industries. In the optical fiber industry, to produce $SiO_2$ preform, $SiCl_4$ is utilized as a raw material. However, the combustion reaction of $SiCl_4$ has caused critical environmental issues, such as ozone deficiency by chlorine compounds, the greenhouse effect by carbon dioxide and corrosive gas such as hydrochloric acid. Thus, finding an alternative source that does not have those environmental issues is important for the future. Octamethylcyclotetrasiloxane (OMCTS or D4) as a chlorine free source is recently promising candidate for the $SiO_2$ preform formation. In this study, we first conducted a vaporizer design to vaporize the OMCTS. The vaporizer for the OMCTS vaporization was produced on the basis of the results of the vaporizer design. The size of the primary particle of the $SiO_2$ formed by OMCTS was less than 100 nm. X-ray diffraction patterns of the $SiO_2$ indicated an amorphous phase. Fourier-transform infrared spectroscopy analysis revealed the Si-O-Si bond without the -OH group.

• Journal of the Korean Ceramic Society
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• v.51 no.3
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• pp.197-200
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• 2014

We investigated the influence of blistering on $Al_2O_3$/SiON stacks and $Al_2O_3$/SiNx:H stacks passivation layers. $Al_2O_3$ film provides outstanding Si surface passivation quality. $Al_2O_3$ film as the rear passivation layer of a p-type Si solar cell is usually stacked with a capping layer, such as $SiO_2$, SiNx, and SiON films. These capping layers protect the thin $Al_2O_3$ layer from an Al electrode during the annealing process. We compared $Al_2O_3$/SiON stacks and $Al_2O_3$/SiNx:H stacks through surface morphology and minority carrier lifetime after annealing processes at $450^{\circ}C$ and $850^{\circ}C$. As a result, the $Al_2O_3$/SiON stacks were observed to produce less blister phenomenon than $Al_2O_3$/SiNx:H stacks. This can be explained by the differences in the H species content. In the process of depositing SiNx film, the rich H species in $NH_3$ source are diffused to the $Al_2O_3$ film. On the other hand, less hydrogen diffusion occurs in SiON film as it contains less H species than SiNx film. This blister phenomenon leads to an increase insurface defect density. Consequently, the $Al_2O_3$/SiON stacks had a higher minority carrier lifetime than the $Al_2O_3$/SiNx:H stacks.

• The Bulletin of The Korean Astronomical Society
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• v.40 no.1
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• pp.59.2-59.2
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• 2015

We present the results of simultaneous observations of the H2O and SiO masers emitted from the circumstellar envelopes of the late-type stars. These observations have been carried out at the K and Q bands using KVN since 2014 August and were scheduled to test the feasibility of multi-frequency phase referencing analysis on the maser lines. In order to increase the accuracy of group delay solution in the fringe search on the continuum source, the IF channels were randomly distributed within the available bandwidth of 500 MHz in each band. The positions of all maser spots are relatively described with respect to the position of the reference continuum source through the source frequency phase referencing technique, and this provides the astrometric position accuracy. Therefore, the relative locations of the H2O maser spots with respect to the SiO maser spots are determined from our observations, and the capability of the simultaneous multi-band observation of KVN is proved to be powerful to study the maser pumping mechanism around the late-type stars.