• Title/Summary/Keyword: Solution-processed

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Fully Solution-Processed Green Organic Light-Emitting Diodes Using the Optimized Electron Transport Layers (최적화된 전자 수송층을 활용한 완전한 용액공정 기반 녹색 유기발광다이오드)

  • Han, Joo Won;Kim, Yong Hyun
    • Journal of the Korean Institute of Electrical and Electronic Material Engineers
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    • v.31 no.7
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    • pp.486-489
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    • 2018
  • Solution-processed organic light-emitting diodes (OLEDs) have the advantages of low cost, fast fabrication, and large-area devices. However, most studies on solution-processed OLEDs have mainly focused on solution-processable hole transporting materials or emissive materials. Here, we report fully solution-processed green OLEDs including hole/electron transport layers and emissive layers. The electrical and optical properties of OLEDs based on solution-processed TPBi (2,2',2"-(1,3,5-Benzinetriyl)-tris(1-phenyl-1-H-benzimidazole)) as the electron transport layer were investigated with respect to the spin speed and the number of layers. The performance of OLEDs with solution-processed TPBi exhibits a power efficiency of 9.4 lm/W. We believe that the solution-processed electron transport layers can contribute to the development of efficient fully solution-processed multilayered OLEDs.

Metal-Semiconductor Contact Behavior of Solution-Processed ZnSnO Thin Film Transistors (용액법으로 제작된 ZnSnO 박막트랜지스터의 전극 물질에 따른 계면 접촉특성 연구)

  • Jeong, Young-Min;Song, Keun-Kyu;Woo, Kyoo-Hee;Jun, Tae-Hwan;Jung, Yang-Ho;Moon, Joo-Ho
    • Korean Journal of Materials Research
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    • v.20 no.8
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    • pp.401-407
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    • 2010
  • We studied the influence of different types of metal electrodes on the performance of solution-processed zinc tin oxide (ZTO) thin-film transistors. The ZTO thin-film was obtained by spin-coating the sol-gel solution made from zinc acetate and tin acetate dissolved in 2-methoxyethanol. Various metals, Al, Au, Ag and Cu, were used to make contacts with the solution-deposited ZTO layers by selective deposition through a metal shadow mask. Contact resistance between the metal electrode and the semiconductor was obtained by a transmission line method (TLM). The device based on an Al electrode exhibited superior performance as compared to those based on other metals. Kelvin probe force microscopy (KPFM) allowed us to measure the work function of the oxide semiconductor to understand the variation of the device performance as a function of the types metal electrode. The solution-processed ZTO contained nanopores that resulted from the burnout of the organic species during the annealing. This different surface structure associated with the solution-processed ZTO gave a rise to a different work function value as compared to the vacuum-deposited counterpart. More oxygen could be adsorbed on the nanoporous solution-processed ZTO with large accessible surface areas, which increased its work function. This observation explained why the solution-processed ZTO makes an ohmic contact with the Al electrode.

Nanoscale Processing on Silicon by Tribochemical Reaction

  • Kim, J.;Miyake, S.;Suzuki, K.
    • Proceedings of the Korean Society of Tribologists and Lubrication Engineers Conference
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    • 2002.10b
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    • pp.67-68
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    • 2002
  • The properties and mechanism of silicon protuberance and groove processing by diamond tip sliding using atomic force microscope (AFM) in atmosphere were studied. To control the height of protuberance and the depth of groove, the processed height and depth depended on load and diamond tip radius were evaluated. Nanoprotuberances and grooves were fabricated on a silicon surface by approximately 100-nm-radius diamond tip sliding using an atomic force microscope in atmosphere. To clarify the mechanical and chemical properties of these parts processed, changes in the protuberance and groove profiles due to additional diamond tip sliding and potassium hydroxide (KOH) solution etching were evaluated. Processed protuberances were negligibly removed, and processed grooves were easily removed by additional diamond tip sliding. The KOH solution selectively etched the unprocessed silicon area. while the protuberances, grooves and flat surfaces processed by diamond tip sliding were negligibly etched. Three-dimensional nanofabrication is performed in this study by utilizing these mechanic-chemically processed parts as protective etching mask for KOH solution etching.

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Improved Stability Sputtered IZO Thin Film Transistor Using Solution Processed Al2O3 Diffusion Layer (Solution-Processed Al2O3 확산층을 이용한 Sputtering IZO Thin Film Transistor의 안정성 향상)

  • Hwang, Namgyung;Lim, Yooseong;Lee, Jeong Seok;Lee, Sehyeong;Yi, Moonsuk
    • Journal of the Korean Institute of Electrical and Electronic Material Engineers
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    • v.31 no.5
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    • pp.273-277
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    • 2018
  • This research introduces the sputtered IZO thin film transistor (TFT) with solution-processed $Al_2O_3$ diffusion layer. IZO is one of the most commonly used amorphous oxide semiconductor (AOS) TFT. However, most AOS TFTs have many defects that degrade performance. Especially oxygen vacancy in the active layer. In previous research, aluminum was used as a carrier suppressor by binding the oxygen vacancy and making a strong bond with oxygen atoms. In this paper, we use a solution-processed $Al_2O_3$ diffusion layer to fabricate stable IZO TFTs. A double-layer solution-processed $Al_2O_3$-sputtered IZO TFT showed better performance and stability, compared to normal sputtered IZO TFT.

Integration of solution-processed polymer thin-film transistors for reflective liquid crystal applications

  • Kim, Sung-Jin;Kim, Min-Hoi;Suh, Min-Chul;Mo, Yeon-Gon;Chang, Seung-Wook;Lee, Sin-Doo
    • Journal of Information Display
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    • v.12 no.4
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    • pp.205-208
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    • 2011
  • Herein, the integration of solution-processed polymer thin-film transistors (TFTs) that were fabricated using selective wettability through ultraviolet (UV) exposure into a reflective liquid crystal display is demonstrated. From the experimental results of energy-dispersive spectroscopy, the composition of carbon and fluorine enhancing the hydrophobicity in the polymer chains was found to play a critical role in the wetting selectivity upon UV exposure. The polymer TFTs fabricated through the wettability-patterning process exhibited long-term stability and reliability. This wetting-selectivity-based patterning technique will be useful for constructing different types of solution-processed electronic and optoelectronic devices.

Molecular Distribution depending on the Cooling-off Condition in a Solution-Processed 6,13-Bis(triisopropylsilylethynyl)-Pentacene Thin-Film Transistor

  • Park, Jae-Hoon;Bae, Jin-Hyuk
    • Journal of the Korean Applied Science and Technology
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    • v.31 no.3
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    • pp.402-407
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    • 2014
  • Herein, we describe the effect of the cooling-off condition of a solution-processed 6,13-bis(triisopropylsilylethynyl)-pentacene (TIPS-pentacene) film on its molecular distribution and the resultant electrical properties. Since the solvent in a TIPS-pentacene droplet gradually evaporates from the rim to the center exhibiting a radial form of solute, for a quenched case, domains of the TIPS-pentacene film are aboriginally spread showing original features of radial shape due to suppressed molecular rearrangement during the momentary cooling period. For the slowly cooled case, however, TIPS-pentacene molecules are randomly rearranged during the long cooling period. As a result, in the lopsided electrodes structure proposed in this work, the charge transport generates more effectively under the case for radial distribution induced by the quenching technique. It was found that the molecular redistribution during the cooling-period plays an important role on the magnitude of the mobility in a solution-processed organic transistor. This work provides at least a scientific basis between the molecular distribution and electrical properties in solution-processed organic devices.

Study on Solution Processed Indium-Yttrium-Oxide Thin-Film Transistors Using Poly (Methyl Methacrylate) Passivation Layer (PMMA 보호막을 이용한 용액 공정 기반의 인듐-이티륨-산화물 트랜지스터에 관한 연구)

  • Kim, Han-Sang;Kim, Sung-Jin
    • Journal of the Korean Institute of Electrical and Electronic Material Engineers
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    • v.30 no.7
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    • pp.413-416
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    • 2017
  • We investigated solution-processed indium-yttrium-oxide (IYO) TFTs using apoly (methyl methacrylate) (PMMA) passivation layer. The IYO semiconductor solution was prepared with 0.1 M indium nitrate hydrate and 0.1 M yttrium acetate dehydrate as precursor solutions. The solution-processed IYO TFTs showed good performance: field-effect mobility of $13.13cm^2/Vs$, a threshold voltage of 8.2 V, a subthreshold slope of 0.93 V/dec, and a current on-to-off ratio of $7.2{\times}10^6$. Moreover, the PMMA passivation layers used to protectthe IYO active layer of the TFTs, did so without deteriorating their performance under ambient conditions; their operational stability and electrical properties also improved by decreasing leakage current.

Effects of Macrophytes on Biological Treatment of Processed-Leachate from Sanitary Landfill Sites

  • Kim, In-Sung;Choi, Hong-Keun;Lee, Eun-Ju
    • Journal of Ecology and Environment
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    • v.29 no.1
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    • pp.29-34
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    • 2006
  • Three macrophytes species, that are, Phragmites australis, Zizania latifolia and Typha angustifolia were grown in mono culture in order to compare growth (relative biomass increase rate), variation of photosynthetic pigment (total chlorophyll, Chl a, Chl b and Chl a/Chl b) and effectiveness of nutriment removal in 15%o NaCl-salt solution or processed-leachate (salinity 19.6%o) from sanitary landfill sites. The relative biomass increase rate of p. australis was significantly higher than Z. latifolia and T. angustifolia. In the case of processed-leachate treatment, the relative biomass increase rates of above-part, rhizome and root of P. australiswere 178 %, 148 % and 157 %, respectively. Also, in 15%o NaCl-salt solution treatment, the relative biomass increase rates of P. australis increased as follows; 161 % (above-part), 183 % (rhizome) and 112 % (root). Total chlorophyll contents increased significantly in the leaves of P. australis and Z. latifolia grown in 15%o NaCl-salt solution and processed-leachate. Among three macrophytes, P. australis was evaluated as most effective macrophyte for the biological retreatment of processed-leachate from sanitary landfill sites.

Ginsenoside Composition Changes in Ginseng Extracts by Different Ascorbic Acid Treatments

  • Ko, Sung-Kwon;Cho, Ok-Sun;Bae, Hye-Min;Sohn, Uy-Dong;Im, Byung-Ok;Cho, Soon-Hyun;Yang, Byung-Wook;Chung, Sung-Hyun;Shin, Wang-Soo;Lee, Boo-Yong
    • Food Science and Biotechnology
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    • v.17 no.4
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    • pp.883-887
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    • 2008
  • The purpose of this study was to develop a new preparation process for chemical transformation of ginseng saponin glycosides to prosapogenins. Ginseng and ginseng extracts were processed under several treatment conditions using ascorbic acid solution. Treating with ascorbic acid at pH 2-3 and above $80^{\circ}C$ increased the ginsenoside $Rg_3$ content of samples to over 3% as compared to other pH levels and temperatures. In addition, ginseng and ginseng extracts that were processed under a high ascorbic acid solution treatment condition (pH 2.0, 5 hr) contained more ginsenoside $Rg_3$ (approximately 16 times) than those processed under a low ascorbic acid solution treatment condition (pH 3.0, 5 hr). The highest quantity of ginsenoside $Rg_3$ (3.434%) occurred when a sample of fine ginseng root extract (AG2-9) was processed with the ascorbic acid solution at pH 2.0 for 9 hr. However, there was no change in the amount of ginsenoside $Rg_3$ when fine ginseng root extracts were processed with ascorbic acid solution at pH 2.0 for over 9 hr. In conclusion, the results indicated that ascorbic acid treatment of ginseng extracts can produce a level of ginsenoside $Rg_3$ that is over 90-fold the amount found in commercial red ginseng.

Regulation of precursor solution concentration for In-Zn oxide thin film transistors

  • Chen, Yanping;He, Zhongyuan;Li, Yaogang;Zhang, Qinghong;Hou, Chengyi;Wang, Hongzhi
    • Current Applied Physics
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    • v.18 no.11
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    • pp.1300-1305
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    • 2018
  • The tunable electronic performance of the solution-processed semiconductor metal oxide is of great significance for the printing electronics. In current work, transparent thin-film transistors (TFTs) with indium-zinc oxide (IZO) were fabricated as active layer by a simple eco-friendly aqueous route. The aqueous precursor solution is composed of water without any other organic additives and the IZO films are amorphous revealed by the X-ray diffraction (XRD). With systematic studies of atomic force microscopy (AFM), X-ray photoemission spectroscopy (XPS) and the semiconductor property characterizations, it was revealed that the electrical performance of the IZO TFTs is dependent on the concentration of precursor solution. As well, the optimum preparation process was obtained. The concentrations induced the regulation of the electronic performance was clearly demonstrated with a proposed mechanism. The results are expected to be beneficial for development of solution-processed metal oxide TFTs.