• 제목/요약/키워드: Solution processed

검색결과 560건 처리시간 0.031초

Label-free Femtomolar Detection of Cancer Biomarker by Reduced Graphene Oxide Field-effect Transistor

  • Kim, Duck-Jin;Sohn, Il-Yung;Jung, Jin-Heak;Yoon, Ok-Ja;Lee, N.E.;Park, Joon-Shik
    • 한국진공학회:학술대회논문집
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    • 한국진공학회 2012년도 제42회 동계 정기 학술대회 초록집
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    • pp.549-549
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    • 2012
  • Early detection of cancer biomarkers in the blood is of vital importance for reducing the mortality and morbidity in a number of cancers. From this point of view, immunosensors based on nanowire (NW) and carbon nanotube (CNT) field-effect transistors (FETs) that allow the ultra-sensitive, highly specific, and label-free electrical detection of biomarkers received much attention. Nevertheless 1D nano-FET biosensors showed high performance, several challenges remain to be resolved for the uncomplicated, reproducible, low-cost and high-throughput nanofabrication. Recently, two-dimensional (2D) graphene and reduced GO (RGO) nanosheets or films find widespread applications such as clean energy storage and conversion devices, optical detector, field-effect transistors, electromechanical resonators, and chemical & biological sensors. In particular, the graphene- and RGO-FETs devices are very promising for sensing applications because of advantages including large detection area, low noise level in solution, ease of fabrication, and the high sensitivity to ions and biomolecules comparable to 1D nano-FETs. Even though a limited number of biosensor applications including chemical vapor deposition (CVD) grown graphene film for DNA detection, single-layer graphene for protein detection and single-layer graphene or solution-processed RGO film for cell monitoring have been reported, development of facile fabrication methods and full understanding of sensing mechanism are still lacking. Furthermore, there have been no reports on demonstration of ultrasensitive electrical detection of a cancer biomarker using the graphene- or RGO-FET. Here we describe scalable and facile fabrication of reduced graphene oxide FET (RGO-FET) with the capability of label-free, ultrasensitive electrical detection of a cancer biomarker, prostate specific antigen/${\alpha}$ 1-antichymotrypsin (PSA-ACT) complex, in which the ultrathin RGO channel was formed by a uniform self-assembly of two-dimensional RGO nanosheets, and also we will discuss about the immunosensing mechanism.

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A New Alternative Hole-transporting Layer to PEDOT:PSS for Realizing Highly Efficient All Solution-processable PLEDs

  • Kang, Beom-Goo;Kang, Hong-Kyu;Lee, Kwang-Hee;Lee, Chang-Lyoul;Lee, Jae-Suk
    • 한국진공학회:학술대회논문집
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    • 한국진공학회 2012년도 제42회 동계 정기 학술대회 초록집
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    • pp.362-363
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    • 2012
  • A new cross-linkable polymer, cross-linked d-PBAB, which has the triphenylamine as the hole transporting moiety and ethynyl group as the thermal cross-linker is firstly synthesized by the combination of anionic polymerization and deprotection process. The thermal cross-linking reaction was performed at $240^{\circ}C$ for 50 min and cross-linked d-PBAB layer showed smooth surface and is not soluble at organic solvent under spin-coating of emitting layer (EML). The solution-processed PLED which was fabricated with cross-linked d-PBAB as HTL showed approximately two times higher Lmax and four times higher LEmax than those obtained from PLED with PEDOT:PSS as the HTL. These result is ascribed to better ability of cross-linked d-PBAB to block electrons and to prevent exciton-quenching than those of PEDOT : PSS at the EML interface. This results strongly suggested that cross-linked d-PBAB can be a promising material to replace conventional PEDOT : PSS. It can be suspected that PLEDwith cross-linked d-PBAB would show longer lifetime compared with that of PLED with PEDOT : PSS, and thus further studies are under investigation.

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UREA의 함량 변화에 따른 배출가스 특성분석 (A study on Property of Emission Gas by the Content Variation of Urea)

  • 강형규;도진우;황인하;임재혁;하종한;나병기
    • 에너지공학
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    • 제24권4호
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    • pp.24-32
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    • 2015
  • 국내외적으로 디젤엔진에 대한 배출가스 규제가 강화되고 있고 다양한 방식의 엔진연소 및 후처리 시스템에 대한 연구가 진행되고 있다. 질소산화물(NOx)의 제거방법으로는 HC-SCR, LNT, Urea-SCR 등이 있으며, Urea-SCR은 높은 변환 효율 및 연비특성으로 향후 NOx의 저감을 위한 유력한 기술로 많은 기술개발이 진행되고 있다. 본 연구에서는 요소함량의 변화에 따른 요소수의 물리적/화학적 특성을 조사하고 배출가스의 특성을 분석하였다. 요소함량의 증가에 따른 요소수의 뷰렛, 알데히드, 인산염 함량은 증가하였으며, 배출가스 중 일산화탄소(CO), 탄화수소(HC) 및 입자상물질(PM)의 배출량 변화는 미미하였다. 질소산화물(NOx)의 배출량은 요소함량이 증가함에 따라 감소하였으며, 30.0 wt%이상의 요소수에서는 질소산화물의 저감효율이 80 %이상을 나타내었다.

요분석 시스템의 분류기 설계에 관한 연구 (A Study on the Design of Classifier for Urine Analysis System)

  • 전계록;김기련;예수영;김철한;정도운;조진호
    • 대한의용생체공학회:의공학회지
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    • 제24권3호
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    • pp.193-201
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    • 2003
  • 본 연구에서는 요분석 시스템의 분류기를 설계하기 위하여 전처리 및 퍼지 알고리듬을 적용하였다. 데이터 전처리 과정은 무채색의 측정치로 구성된 보정용 곡선으로 요분석용 스트립의 측정치를 정규화하는 과정과 삼자극치를 이용한 연산 과정으로 구성하였다. 표준 시약에 의한 분류 실험을 통해 종형의 멤버쉽함수로 측정치를 퍼지화하고 min 추론과 무게중심법의 비퍼지화 과정으로 검사 항목의 농도를 정성적으로 분석할 수 있는 퍼지 분류기를 구성하였다. 표준 시약과 환자 요 검체의 관계에 의해 멤버쉽함수를 보정한 후 구성된 분류기를 통해 환자 요검체를 측정하여 분류 결과를 관찰함으로써 설계된 요분석용 분류기의 임상 적용 가능성을 검토하였다. 실험 결과는 모든 검사 항목에 대해 기준 장비의 검사 결과와 만족할 만한 일치도를 보였다.

효율성과 가용성을 향상시킨 패스워드 관리시스템 연구 (A Study of Password Management System for Improves the Availability and Efficiency)

  • 서미숙;박대우
    • 한국정보통신학회:학술대회논문집
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    • 한국정보통신학회 2013년도 추계학술대회
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    • pp.150-153
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    • 2013
  • 발달된 IT 솔루션 기반으로 인한 관리 서버가 증가되고 있고, 서버의 보안성이 중요하다. 효율적인 패스워드를 관리하기 위한 안전한 패스워드 관리시스템에 대한 연구가 필요하다. 본 논문에서는 주기적인 시스템 계정과 패스워드는 숫자와 문자를 섞어 8자리 이상으로 변경을 하는 규칙을 정한다. 또한 각 시스템 계정의 패스워드가 숫자, 영문자, 특수문자를 포함해야 하는 패스워드 셋팅 룰을 정한다. 하지만 새로운 IT시스템의 지속적인 도입과 인력 투입의 한계로 인하여, 안전성을 확보하기 위한 패스워드에 대한 문제가 발생되고 있다. 국내외 통합접근제어 솔루션에서 패스워드 관리 기능을 일부 제공하고 있으나, 고가이고 서버 트래픽에 부하를 주는 단점이 있다. 향후 일반 전산시스템이 융합IT시스템으로 전환이 가속화될 것으로 판단되며, 본 연구에서는 효율적인 패스워드 관리를 위한 패스워드 관리시스템 연구를 통해 가용성과 효율성을 높이면서, 개인정보보호법을 준수할 수 있는 패스워드 관리시스템을 개발한다.

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Solution-Processed Inorganic Thin Film Transistors Fabricated from Butylamine-Capped Indium-Doped Zinc Oxide Nanocrystals

  • Pham, Hien Thu;Jeong, Hyun-Dam
    • Bulletin of the Korean Chemical Society
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    • 제35권2호
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    • pp.494-500
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    • 2014
  • Indium-doped zinc oxide nanocrystals (IZO NCs), capped with stearic acid (SA) of different sizes, were synthesized using a hot injection method in a noncoordinating solvent 1-octadecene (ODE). The ligand exchange process was employed to modify the surface of IZO NCs by replacing the longer-chain ligand of stearic acid with the shorter-chain ligand of butylamine (BA). It should be noted that the ligand-exchange percentage was observed to be 75%. The change of particle size, morphology, and crystal structures were obtained using a field emission scanning electron microscope (FE-SEM) and X-ray diffraction pattern results. In our study, the 5 nm and 10 nm IZO NCs capped with stearic acid (SA-IZO) were ligand-exchanged with butylamine (BA), and were then spin-coated on a thermal oxide ($SiO_2$) gate insulator to fabricate a thin film transistor (TFT) device. The films were then annealed at various temperatures: $350^{\circ}C$, $400^{\circ}C$, $500^{\circ}C$, and $600^{\circ}C$. All samples showed semiconducting behavior and exhibited n-channel TFT. Curing temperature dependent on mobility was observed. Interestingly, mobility decreases with the increasing size of NCs from 5 to 10 nm. Miller-Abrahams hopping formalism was employed to explain the hopping mechanism insight our IZO NC films. By focusing on the effect of size, different curing temperatures, electron coupling, tunneling rate, and inter-NC separation, we found that the decrease in electron mobility for larger NCs was due to smaller electronic coupling.

극저온 열처리가 7075 알루미늄 합금의 잔류응력과 기계적 특성에 미치는 영향 (Effects of Cryogenic Treatment Cycles on Residual Stress and Mechanical Properties for 7075 Aluminum Alloy)

  • 김회봉;정은욱;고대훈;김병민;조영래
    • 한국재료학회지
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    • 제23권1호
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    • pp.18-23
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    • 2013
  • In this study, the effects of cryogenic treatment cycles on the residual stress and mechanical properties of 7075 aluminum alloy (Al7075) samples, in the form of a tube-shaped product with a diameter of 500 nm, were investigated. Samples were first subjected to solution treatment at $470^{\circ}C$, followed by cryogenic treatment and aging treatment. The residual stress and mechanical properties of the samples were systematically characterized. Residual stress was measured with a cutting method using strain gauges attached on the surface of the samples; in addition, tensile strength and Vickers hardness tests were performed. The detailed microstructure of the samples was investigated by transmission electron microscopy. Results showed that samples with 85 % relief in residual stress and 8% increase in tensile strength were achieved after undergoing three cycles of cryogenic treatments; this is in contrast to the samples processed by conventional solution treatment and natural aging (T4). The major reasons for the smaller residual stress and relatively high tensile strength for the samples fabricated by cryogenic treatment are the formation of very small-sized precipitates and the relaxation of residual stress during the low temperature process in uphill quenching. In addition, samples subjected to three cycles of cryogenic treatment demonstrated much lower residual stress than, and similar tensile strength compared to, those samples subjected to one cycle of cryogenic treatment or artificial aging treatment.

실리콘 관통형 Via(TSV)의 Seed Layer 증착 및 Via Filling 특성 (Characteristic of Through Silicon Via's Seed Layer Deposition and Via Filling)

  • 이현주;최만호;권세훈;이재호;김양도
    • 한국재료학회지
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    • 제23권10호
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    • pp.550-554
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    • 2013
  • As continued scaling becomes increasingly difficult, 3D integration has emerged as a viable solution to achieve higher bandwidths and good power efficiency. 3D integration can be defined as a technology involving the stacking of multiple processed wafers containing integrated circuits on top of each other with vertical interconnects between the wafers. This type of 3D structure can improve performance levels, enable the integration of devices with incompatible process flows, and reduce form factors. Through silicon vias (TSVs), which directly connect stacked structures die-to-die, are an enabling technology for future 3D integrated systems. TSVs filled with copper using an electro-plating method are investigated in this study. DC and pulses are used as a current source for the electro-plating process as a means of via filling. A TiN barrier and Ru seed layers are deposited by plasma-enhanced atomic layer deposition (PEALD) with thicknesses of 10 and 30 nm, respectively. All samples electroplated by the DC current showed defects, even with additives. However, the samples electroplated by the pulse current showed defect-free super-filled via structures. The optimized condition for defect-free bottom-up super-filling was established by adjusting the additive concentrations in the basic plating solution of copper sulfate. The optimized concentrations of JGB and SPS were found to be 10 and 20 ppm, respectively.

Fabrication of Thin Film Transistors based on Sol-Gel Derived Oxide Semiconductor Layers by Ink-Jet Printing Technology

  • 문주호;김동조;송근규;정영민;구창영
    • 한국재료학회:학술대회논문집
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    • 한국재료학회 2009년도 춘계학술발표대회
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    • pp.16.1-16.1
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    • 2009
  • We have fabricated solution processed oxide semiconductor active layer for thin film transistors (TFTs). The oxide semiconductor layers were prepared by ink-jet printing the sol-gel precursor solution based on doped-ZnO. Inorganic ZnO-based thin films have drawn significant attention as an active channel layer for TFTs applications alternative to conventional Si-based materials and organic semiconducting materials, due to their wide energy band gap, optical transparency, high mobility, and better stability. However, in spite of such excellent device performances, the fabrication methods of ZnO related oxide active layer involve high cost vacuum processes such as sputtering and pulsed laser deposition. Herein we introduced the ink-jet printing technology to prepare the active layers of oxide semiconductor. Stable sol-gel precursor solutions were obtained by controlling the composition of precursor as well as solvents and stabilizers, and their influences on electrical performance of the transistors were demonstrated by measuring electrical parameters such as off-current, on-current, mobility, and threshold voltage. Microstructure and thermal behavior of the doped ZnO films were investigated by SEM, XRD, and TG/DTA. Furthermore, we studied the influence of the ink-jet printing conditions such as substrate temperature and surface treatment on the microstructure of the ink-jet printed active layers and electrical performance. The mobility value of the device with optimized condition was about 0.1-1.0 $cm^2/Vs$ and the on/off current ratio was about $10^6$. Our investigations demonstrate the feasibility of the ink-jet printed oxide TFTs toward successful application to cost-effective and mass-producible displays.

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분무건조에 의한 분말대추음료의 가공 (Processing of Powdered Jujube Juice by Spray Drying)

  • 안덕순;우강융;이동선
    • 한국식품영양과학회지
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    • 제26권1호
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    • pp.81-86
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    • 1997
  • 대추를 이용한 가공제품의 하나로서 분무건조에 의한 분말음료의 개발을 시도하였다. 대추 추출액은 그 자체로는 모든 농도 범위에서 분무건조 하기가 불가능하였고 건조보조제의 첨가에 의해서 분말음료로의 제조가공이 가능하였다 대추 추출액은 26。Bx 농도까지 농축시키고 알맞은 건조보조제를 첨가하여 최종농도를 30。Bx로 조정하여 분무 건조시켰다 첨가되는 건조보조제의 양은 대추 추출액과 건조보조제의 비율이고 형물 기준으로 1:1정도까지 흔합했을때 건조가 용이하고 얻어지는 제품의 품질이 양호하였다. maltose, 농축유, gum arabic, dextrin등의 건조보조제를 검토한 결과 maltose와 gum arabic을 흔합하여 사용할 때 제품의 관능적 특성이 가장 우수하였다. 대추 추출시의 효소처리는 수율을 13~39% 향상시 킬 수 있었다. 그렇지만 효소처리가 분말대추음료의 관능적인 특성에 부정적인 영향을 나타내었으며 추출수율 향상을 위해 사용되어진다면 품질열화가 적은 pectinase의 0.5% 처리가 가장 바람직한 것으로 나타났다.

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