• Title/Summary/Keyword: Solid oxide

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Characteristics of poly-Si TFTs using Excimer Laser Annealing Crystallization and high-k Gate Dielectrics (Excimer Laser Annealing 결정화 방법 및 고유전 게이트 절연막을 사용한 poly-Si TFT의 특성)

  • Lee, Woo-Hyun;Cho, Won-Ju
    • Journal of the Korean Institute of Electrical and Electronic Material Engineers
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    • v.21 no.1
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    • pp.1-4
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    • 2008
  • The electrical characteristics of polycrystalline silicon (poly-Si) thin film transistor (TFT) crystallized by excimer laser annealing (ELA) method were evaluated, The polycrystalline silicon thin-film transistor (poly-Si TFT) has higher electric field-effect-mobility and larger drivability than the amorphous silicon TFT. However, to poly-Si TFT's using conventional processes, the temperature must be very high. For this reason, an amorphous silicon film on a buried oxide was crystallized by annealing with a KrF excimer laser (248 nm)to fabricate a poly-Si film at low temperature. Then, High permittivity $HfO_2$ of 20 nm as the gate-insulator was deposited by atomic layer deposition (ALD) to low temperature process. In addition, the solid phase crystallization (SPC) was compared to the ELA method as a crystallization technique of amorphous-silicon film. As a result, the crystallinity and surface roughness of poly-Si crystallized by ELA method was superior to the SPC method. Also, we obtained excellent device characteristics from the Poly-Si TFT fabricated by the ELA crystallization method.

The Epoxy-metal Interphase and Its Incidence on Practical Adhesion

  • Roche, Alain Andre;Aufray, Maelenn
    • Journal of Adhesion and Interface
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    • v.4 no.2
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    • pp.1-9
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    • 2003
  • Epoxy-amine liquid prepolymers are extensively applied onto metallic substrates and cured to obtain painted materials or bonded joint structures. Overall performances of such systems depend on the created interphase between the organic layer and the substrate. When epoxy-amine liquid mixtures are applied onto more or less hydrated metallic oxide layer, concomitant amine chemical sorption and hydroxide dissolution appear lending to the chelate formation. As soon as the chelate concentration is higher than the solubility product, these species crystallize as sharp needles. Moreover, intrinsic and thermal residual stresses are developed within painted or bonded systems. When residual stresses are higher than the organic layer/substrate adhesion, buckling, blistering, debonding may occur leading to a catastrophic drop of system performances. Practical adhesion can be evaluated with either ultimate parameters (Fmax or Dmax) or the critical strain energy release rate, using the three point flexure test (ISO 14679-1997). We observe that, for the same system, the ultimate load decreases while residual stresses increase when the liquid/solid time increases. Ultimate loads and residual stresses depend on the metallic surface treatment. For these systems, the critical strain energy release rate which takes into account the residual stress profile and the Young's modulus gradient remains quite constant whatever the metallic surface treatment was. These variations will be discussed and correlate to the formation mechanisms of the interphase.

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Ge Crystal Growth on Si Substrate for GaAs/Ge/Si Structure by Plasma-Asisted Epitaxy (GaAs/Ge/Si 구조를 위하여 PAE법을 이용한 Si 기판위에 Ge결정성장)

  • 박상준;박명기;최시영
    • Journal of the Korean Institute of Telematics and Electronics
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    • v.26 no.11
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    • pp.1672-1678
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    • 1989
  • Major problems preventing the device-quality GaAs/Si heterostructure are the lattice mismatch of about 4% and difference in thermal expansion coefficient by a factor of 2.64 between Si and GaAs. Ge is a good candidate for the buffer layer because its lattice parameter and thermal expansion coefficient are almost the same as those of GaAs. As a first step toward developing heterostructure such as GaAs/Ge/Si entirely by a home-built PAE (plasma-assisted epitaxy), Ge films have been deposited on p-type Si (100)substrate by the plasma assisted evaporation of solid Ge source. The characteristics of these Ge/Si heterostructure were determined by X-ray diffraction, SEM and Auge electron spectroscope. PAE system has been successfully applied to quality-good Ge layer on Si substrate at relatively low temperature. Furthermore, this system can remove the native oxide(SiO2) on Si substrate with in-situ cleaning procedure. Ge layer grown on Si substrate by PAE at substrate temperature of 450\ulcorner in hydrogen partial pressure of 10mTorr was expected with a good buffer layer for GaAs/Ge/Si heterostructure.

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Development of $YSZ/La_0.85S_r0.15MnO_3$ Composite Electrodes for Solid Oxide Fuel Cells (고체산화물 연료전지용 $YSZ/La_0.85S_r0.15MnO_3$계 복합전극의 개발)

  • 윤성필;현상훈;김승구;남석우;홍성안
    • Journal of the Korean Ceramic Society
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    • v.36 no.9
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    • pp.982-990
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    • 1999
  • YSZ/LSM composite cathode was fabricated by dip-coating of YSZ sol on the internal pore surface of a LSM cathode followed by sintering at low temperature (800-100$0^{\circ}C$) The YSZ coating significantly increased the TPB(Triple Phase Boundary) where the gas the electrode and the electrolyte were in contact with each other. Sinter the formation of resistive materials such as La2Zr2O7 or SrZrO3 was prevented due to the low processing temperature and TPB was increased due to the YSZ film coating the electrode resistance (Rel) was reduced about 100 times compared to non-modified cathode. From the analysis of a.c impedance it was shown that microstructural change of the cathode caused by YSZ film coating affected the oxygen reduction reaction. In the case of non-modified cathode the RDS (rate determining step) was electrode reactions rather than mass transfer or the oxygen gas diffusion in the experimental conditions employed in this study ($600^{\circ}C$-100$0^{\circ}C$ and 0,01-1 atm of Po2) for the YSZ film coated cathode however the RDS involved the oxygen diffusion through micropores of YSZ film at high temperature of 950-100$0^{\circ}C$ and low oxygen partial pressure of 0.01-0.03 atm.

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Single Cell Stacked Planar Type SOFC Assembled Using a Ag-Current Collector (Ag 집전체를 적용한 평판형 SOFC 단전지)

  • Cho, Nam-Ung;Hwang, Soon-Cheol;Lee, In-Sung
    • Journal of the Korean Ceramic Society
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    • v.44 no.12
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    • pp.720-726
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    • 2007
  • Current collectors of SOFC play a significant role on the performance of power generation. In this study a single cell stacked SOFC was assembled using Ag-mesh as a cathode current collector, and evaluated its performance. No gas leakages of the single cell stack occurred in the tests of gas detection and OCV measurement. The OCV and initial power of the stack were 1.09V and $0.45W/cm^2$, respectively, under the flow rates of air at 2,500 cc/min and $H_2$ at 1,000 cc/min at the test temperature of $750^{\circ}C$. A degradation rate of 44.0% was measured during the prolonged time of 307 h. The relatively low durability of the tested single cell stack was found to be the evaporation of Ag-mesh at the current corrector.

Improvement of Open Circuit Voltage (OCV) depending on Thickness of GDC Electrolyte of LT-SOFCs (저온형 SOFC용 GDC 전해질 두께에 따른 Open Circuit Voltage 향상)

  • Ko, Hyun-Jun;Lee, Jong-Jin;Hyun, Sang-Hoon
    • Journal of the Korean Ceramic Society
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    • v.47 no.2
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    • pp.195-198
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    • 2010
  • It has been considered to apply GDC ($Gd_{0.1}Ce_{0.9}O_{1-X}$) for low-temperature SOFC electrolytes because it has higher ionic conductivity than YSZ at low temperature. However, open circuit voltage with using GDC ($Gd_{0.1}Ce_{0.9}O_{1-X}$) electrolyte in SOFCs, becomes lower than using YSZ (8 mol% Yttria stabilized Zirconia) electrolyte because GDC has electronic conductivity. In this work, the effect of changing GDC electrolyte thickness on the open circuit voltage has been investigated. Ni-GDC anode-supported unit cells were fabricated as follows. Mixed NiO-GDC powders were pressed and pre-sintered at $1200^{\circ}C$. And then, GDC electrolyte material was dip-coated on the anode and sintered at $1400^{\circ}C$. Finally the LSCF-GDC cathode material was screen-printed on the electrolyte and sintered at $1000^{\circ}C$. Electrolyte thickness was controlled by the number of dip-coating times. Open circuit voltage was measured depending on electrolyte thickness at $650^{\circ}C$ and found that the thicker GDC electrolyte was, the better OCV was.

Effect of Microstructural Design on the Electrical Properties of Y2O3-Stabilized ZrO2 (미세구조 설계에 따른 이트리아 안정화 지르코니아의 전기적 성질 변화)

  • 김선재;김경호;오석진;강대갑;국일현
    • Journal of the Korean Ceramic Society
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    • v.30 no.9
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    • pp.717-722
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    • 1993
  • Effects of microstructures on the electrical properties of ZrO2 based ceramics were analyzed by modeling layer arrangements and mixed phase structures. Single layers and alternating multilayers were made from 3mol% and 8mol% Y2O3 doped ZrO2 powders, while mixed specimen was made by blending and compacting these raw powders. After sintering at 150$0^{\circ}C$ for 2hr in air, AC impedance characteristics were measured. Contributiion of bulk comonent to total resistivity and its temperature-dependence were larger in 8Y-ZrO2 single layer than in 3Y-ZrO2 single layer. The multilayered specimen connected in serial to electrodes showed partial characteristics of both 3Y-ZrO2 and 8Y-ZrO2 single layers. The multilayered specimen connected in parallel to electrodes and the mixed specimen exhibited characteristics mainly of 8Y-ZrO2 single layer. The multilayered specimen connected in parallel to electrodes revealed the highest electrical conductivity near the operating temperature of solid oxide fuel cell. However, it is expected that the mixed specimen is appropriate for the applications because of its relatively high electrical conductivity with high strength expected.

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A Study on Thermal Cycle Characteristics of Solid Oxide Fuel Cell (고체 산화물 연료전지의 열사이클 따른 성능 열화 특성 연구)

  • Kim, Eung-Yong;Song, Rak-Hyun;Jeon, Kwang-Sun;Shin, Dong-Ryul;Kang, Thae-Khapp
    • Proceedings of the KIEE Conference
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    • 1998.07d
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    • pp.1312-1314
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    • 1998
  • SOFC system is often subject to thermal cycle condition during normal start/stop, shutdown, and emergence state. Under the thermal cycle condition of heating and cooling, the SOFC components expand or shrink, which produces thermal stress and thermal shock. The SOFC performance is degraded by the thermal factors. To protect SOFC system from the thermal degradation, the optimum thermal condition must be clarified. In this study, to examine the thermal cycle characteristics, we fabricated single cells of planar SOFC with an area of $5{\times}5cm$. The electrolyte and PEN were tested under thermal cycle conditions in the range of$ 2-8^{\circ}C/min$. After thermal cycle test. crack creation of the components were examined using ultraviolet apparatus. No crack in the electrolyte and PEN were observed. The single cell system with alumina frame were also tested under thermal cycle conditions of 2, 3, $4^{\circ}C/min$. The single cell was fractured at the thermal cycle of 3 and $4^{\circ}C/min$ and the optimum condition of the thermal cycle to be found below $2^{\circ}C/min$.

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에탄올을 첨가한 reflux법 나노 세리아 합성

  • Jo, Min-Yeong;Lee, Jae-Won;Park, Seon-Min;Choe, Heon-Jin
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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    • 2008.11a
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    • pp.162-162
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    • 2008
  • 세리아는 고체 산화물 연료전지(SOFC, solid oxide fuel cell)의 전해질 재료와CMP( chemical mechanical polishing) 슬러리 재료, 자동차의 3원 촉매, gas sensor, UV absorbent등 여러 분야에서 사용되고 있다. 본 연구에서는 세리아의 입자의 크기와 형상을 조절하여 성능 및 물성을 향상시켜 보다 넓은 분야의 활용을 하고자 실험을 실시하였다. 세리아 합성에 사용되는 전구체인 cerium carbonate의 특성이 세리아 분말의 물리화학적 특성에 직접적인 영향을 주기 때문에 전구체의 합성 단계에서 형상과 크기를 조절하고자 하였다. 세륨염으로 cerium nitrate hexahydrate, 균일침전반응을 할 수 있는 urea를 침전제로 사용하였다. 반응 용매의 유전상수를 조절하고 반응의 과포화도 변화를 이용하기 위하여 에탄올을 첨가하여 입자의 크기 및 형상을 조절, cubic형태의 $Ce_2O(CO_3)_2{\cdot}H_2O$ 결정상을 가지는 세리아 전구체를 합성하였다. 이렇게 생성된 전구체를 $1000^{\circ}C$에서 2시간동안 하소하여 세리아를 합성하고 반응시간, 농도, 에탄올의 함량 변화에 대해 XRD, FE-SEM, particle size analyzer, micropore physisorption analyzer 분석을 통하여 입자의 결정상과 형상, 입도 분포 및 기공분포 등을 반응인자의 변화에 따라 비교 및 해석하였다.

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Sulfur Tolerance Effects on Sr0.92Y0.08Ti0.5Fe0.5O3-δ as an Alternative Anode in Solid Oxide Fuel Cells

  • Kim, Jun Ho;Yun, Jeong Woo
    • Journal of Electrochemical Science and Technology
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    • v.9 no.2
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    • pp.133-140
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    • 2018
  • $Sr_{0.92}Y_{0.08}Ti_{0.5}Fe_{0.5}O_{3-{\delta}}$ (SYTF0.5) is investigated as an alternative anode in $H_2$ fuels containing $H_2S$ (0-200 ppm). Although additional ionic conductivity is introduced by aliovalent substitution of $Ti^{4+}$ by $Fe^{3+}$ in the B-site, the SYTF0.5 has lower electrical conductivity than that of the $Sr_{0.92}Y_{0.08}TiO_{3-{\delta}}$. Due to the mixed ionic and electronic conductive (MIEC) property exhibited in the SYTF0.5 anode, the electrochemical performance of the SYTF0.5 anode is improved, as well as the sulfur tolerance. The maximum power densities in $H_2$ at $900^{\circ}C$ for the SYT anode and the SYTF0.5 anode were 56.9 and $98.6mW/cm^2$, respectively. The maximum power density in the SYTF0.5 anode at 200 ppm of $H_2S$ concentration decreased by only 12.9% (86.3 to $75.2mW/cm^2$).