• Journal of Hydrogen and New Energy
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• v.22 no.3
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• pp.319-325
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• 2011

The electrical properties of sputtered GDC thin films on $Al_2O_3$ substrates was studied. The electrical properties of the films were measured to evaluate the ion conductivity of GDC thin films for co-planar SOFC electrolytes. The impedance of the GDC thin films on $Al_2O_3$ substrates was affected by the film thickness and the impedance of thin film exhibited higher value than thick films. Similarly, the conductivity of the thick film showed much higher value than thin films. It indicated that the film thickness is the main factor affecting the conductivity and impedance of the GDC electrolyte for the co-planar SOFC.

• 한국신재생에너지학회:학술대회논문집
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• 2010.11a
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• pp.78.1-78.1
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• 2010

The metal-supported solid oxide fuel cell (SOFC) was studied. Hydrocarbon fueled operation is necessary to make SOFC system. Different operating characteristics for metal-supported SOFC are used than for conventional ones as hydrocarbon fueled operation. Metal-supported SOFC was successfully fabricated by a high temperature sinter-joining method and the cathode was in-situ sintered. Synthetic gas, which is compounded as the diesel reformate gas composition and low hydrocarbons was completely removed by the diesel reformer. Metal-supported SOFC with synthetic gas was operated and evaluated and its characteristics analyzed. Button cell and $5{\times}5cm^2$ single stack were mainly operated and analyzed. Long-term operation using diesel reformate shows degradation, and degradation analysis was completed in the view of metal oxidation. Solution to increase stability of long-term operation was tried in the way of materials and operating conditions. Finally, $5{\times}5cm^2$ metal-supported single stack using synthetic gas was operated for 1000 hours under the modified condition.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2009.11a
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• pp.273-273
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• 2009

고체산화물 연료전지 (Solid Oxide Fuel Cell, 이하 SOFC)는 제조형태에 따라 크게 평판형과 원통형으로 구분할 수 있다. 단위면적당 출력 효율이 높은 평판형의 장점과 원통형의 밀봉이 용이한 장점을 동시에 가지는 평관형 형태로 지지체를 제작하였으며, 셀의 배치를 평면상 직렬로 연결하는 다전지식으로 구성함으로 전극의 길이나, 셀 간격을 기존 평판형이나 원통형에 비해 대폭 감소시켜 단위면적당 전압 및 출력효율을 높이고자 하였다. Segmented 평관형 지지체의 소재로는 연료전지의 성능 특성에 관여하지 않으며 열사이클 저항성과 기계적 강도가 우수한 spinel구조를 가지는 $MgAl_2O_4$를 선정하였다. 연료가스의 원활한 공급이 가능하도록 carbon을 기공 전구체로 사용하여 압출성형하였으며 건조과정에서 crack이 생기지 않는 공정을 확립한 후 $1400^{\circ}C$ 에서 소결하였다. 제조된 지지체는 수은침투법과 3점 굽힘 강도법으로 기공율과 기계적 강도를 각각 측정하였다. Anode를 스크린 프린팅법으로 지지체 위에 적층한 후 미세구조를 확인하였고 이를 바탕으로 다공성이며 기계적 강도를 가지고 음극과의 반응이 없는 우수한 지지체를 제조할 수 있었다.

• Proceedings of the Korean Vacuum Society Conference
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• 2016.02a
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• pp.198.1-198.1
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• 2016

Organic light-emitting diode (OLED) displays have promising potential to replace liquid crystal displays (LCDs) due to their advantages of low power consumption, fast response time, broad viewing angle and flexibility. Organic light emitting materials are vulnerable to moisture and oxygen, so inorganic thin films are required for barrier substrates and encapsulations.[1-2]. In this work, the silicon-based inorganic thin films are deposited on plastic substrates by plasma-enhanced chemical vapor deposition (PECVD) at low temperature. It is necessary to deposit thin film at low temperature. Because the heat gives damage to flexible plastic substrates. As one of the transparent diffusion barrier materials, silicon oxides have been investigated. $SiO_x$ have less toxic, so it is one of the more widely examined materials as a diffusion barrier in addition to the dielectric materials in solid-state electronics [3-4]. The $SiO_x$ thin films are deposited by a PECVD process in low temperature below $100^{\circ}C$. Water vapor transmission rate (WVTR) was determined by a calcium resistance test, and the rate less than $10.^{-2}g/m^2{\cdot}day$ was achieved. And then, flexibility of the film was also evaluated.

• Journal of the Korean Ceramic Society
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• v.55 no.6
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• pp.527-555
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• 2018

High-temperature thermal insulation materials challenge extensive oxide candidates such as porus $SiO_2$, $Al_2O_3$, yttria-stabilized zirconia, and mullite, due to the needs of good mechanical, thermal, and chemical reliabilities at high temperatures simultaneously. Recently, porous rare earth (RE) silicates have been revealed to be excellent thermal insulators in harsh environments. These materials display attractive properties, including high porosity, moderately high compressive strength, low processing shrinkage (near-net-shaping), and very low thermal conductivity. The current critical challenge is to balance the excellent thermal insulation property (extremely high porosity) with their good mechanical properties, especially at high temperatures. Herein, we review the recent developments in processing techniques to achieve extremely high porosity and multiscale strengthening strategy, including solid solution strengthening and fiber reinforcement methods, for enhancing the mechanical properties of porous RE silicate ceramics. Highly porous RE silicates are highlighted as emerging high-temperature thermal insulators for extreme environments.

• Proceedings of the Korean Vacuum Society Conference
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• 2015.08a
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• pp.203-203
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• 2015

Gallium Oxide (Ga2O3) has been widely investigated for the optoelectronic applications due to its wide bandgap and the optical transparency. Recently, with the development of fabrication techniques in nanometer scale semiconductor materials, there have been an increasing number of extensive reports on the synthesis and characterization of Ga2O3 nano-structures such as nano-wires, nano-belts, and nano-dots. In contrast to typical vapor-liquid-solid growth mode with metal catalysts to synthesis 1-dimensional nano-wires, there are several difficulties in fabricating the nano-structures by using sputtering techniques. This is attributed to the fact that relatively low growth temperatures and higher growth rate compared with chemical vapor deposition method. In this study, Ga2O3 nanowires (NWs) were synthesized by using radio-frequency magnetron sputtering method. The NWs were then coated by Au thin films and annealed under Ar or N2 gas enviroment with no supply of Gallium and Oxygen source. Several samples were prepared with varying the post annealing parameters such as gas environment annealing time, annealing temperature. Samples were characterized by using XRD, SEM, and PL measurements. In this presentation, the details of fabrication process and physical properties of branched Ga2O3 NWs will be reported.

• Proceedings of the KIEE Conference
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• 1991.11a
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• pp.269-273
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• 1991

High Tc oxide superconductor with a Tc above 100 K has been successfully prepared by solid state reaction method in added-Pb BiSrCaCuO system. As compared with 123 compound, the formation reaction of the high Tc requires long time heat treatment. It is due to the transformation from the low Tc phase to high Tc phase. The sintering just below the melting point of the calcined powder mixture is effective on the formation of the high Tc phase in BiSrCaCuO system to be added with Pb. The growth of the high Tc superconducting phase has a thin plate shape, which is characterized by the c parameter of 37${\AA}$. The formation kinetics is also investigated in the samples with different Bi/Pb ratio and the 30% Pb addition is most preferable for the formation of the high Tc phase. The formation of the high Tc phases is delayed by the excessive addition of Pb. The lattice parameter(c) of the unit cell(both the low and high Tc phases) is increased with increase of Pb.

• Journal of the Korean Ceramic Society
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• v.29 no.11
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• pp.900-904
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• 1992

High temperature electrical conductivity was measured for perovskite La0.98Sr0.02MnO3 at 200~130$0^{\circ}C$ as a function of Po2 and 1/T. Perovskite La1-xSrxMnO3 system is the typical oxygen electrode in solid oxide fuel cell (SOFC). Acetate precursors were used for the preparation of mixed water solution and the calcined powders were reacted with Na2CO3 flux in order to obtain highly reactive powders of perovskite La0.98Sr0.02MnO3. The relative density was greatly increased above 90% because of the homogeneous sintering. From the conductivity ($\sigma$)-temperature and conductivity-Po2 at constant temperature, the defect structure of La0.98Sr0.02MnO3 was discussed. From the slope of 1n($\sigma$) vs 1/T, the activation energy of 0.069 and 0.108eV were evaluated for above 40$0^{\circ}C$, respectively. From the relationship between $\sigma$ and Po2, it was found that the decomposition of La0.98Sr0.02MnO3 was occurred at 10-15.5 atm(97$0^{\circ}C$) and 10-11 atm(125$0^{\circ}C$). It is supposed that the improvement of p-type conductivity may be leaded by the increase of Mn4+ concentration through the substitution of divalent/monovalent cations for La site in LaMnO3.

• Journal of the Korean Ceramic Society
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• v.19 no.2
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• pp.127-132
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• 1982

This experiment has been carried out for the purpose of investigating the effect of additives on densification and grain growth in magnesium oxide by a two-step process; hot pressing and heat treating. MgO powder has been obtained by calcining extra reagent grade MgCO3 at 90$0^{\circ}C$ for 30 minutes, and additives have been added to $MgCO_3$ in the form of soluble salts-Al$(NO_3)_3$$. $9H_2O$ and $Cr(NO_3)_3$.9H_2O$. The hot pressing has been carried out with changes of soaking time at 125$0^{\circ}C$ under the pressure of 250kg/$\textrm{cm}^2$, and the heat treating also at same temperature. The initial particle size of MgO measured by particle size analyzer was 0.86 microns. Densification rate obeyed the equation D=K lnt + C, and grain growth rate obeyed the equation G-G0=kt1/2. It was vaporization of some $Cr_2O_3$ and formation of solid solution that had an influence on desification of MgO containing $Cr_2O_3$. Activation energy for grain growth of pure MgO was 62.4 kcal/mole, therefore grain growth was supposed to be diffusioncontrolled process. But after heat treatmeat, excess additives were expected to slow down the grain growth by the formation of second phase or the solute atoms at grainboundary.

• Journal of the Korean Ceramic Society
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• v.44 no.3 s.298
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• pp.182-187
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• 2007

10 mol% $Gd_{2}O_{3}-CeO_{2}$ powder was sintered by microwave in a 2.45 GHz multimode cavity to develop a dense electrolyte layer for intermediate temperature solid oxide fuel cells (IT-SOFCs). Samples were sintered from $1100^{\circ}C$ upto $1500^{\circ}C$ by $50^{\circ}C$ difference and kept for 10 min and 30 min at the maximum temperature respectively. Theoretical density of the sample sintered at $1200^{\circ}C$ for 10 min was 95.4% and increased gradually upto 99% in the sample sintered at $1500^{\circ}C$ for 30 min. All of sintered samples showed very fine microstructures and the maximum average grain size of the sintered sample at $1500^{\circ}C$ for 30 min was $(0.87{\pm}0.42){\mu}m$. Ionic conductvity of the samples were measured by DC 4 probe method.