• KIEE International Transactions on Electrophysics and Applications
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• v.3C no.1
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• pp.10-14
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• 2003

The occurrence of partial discharge (PD) in solid dielectrics is very harmful because it leads to the deterioration of insulation by electrical, chemical, and thermal reactions as a combined action of the discharged ions bombarding the surface and by the action of chemical compounds that are formed by the discharge. Consequently, if any defects are present in the solid insulation system, performance decreases until the system breaks down. Therefore, removing or suppressing the defect is very important. Voids are a typical defect in the solid insulation system and are very harmful because they deteriorate insulation. As a basic step, studying the properties of PD in voids is important because an accurate knowledge of these properties is required to estimate the deterioration of voids. In this paper, the correlation between the size of voids and internal PD is discussed as a function of the time of the applied voltage and its magnitude. Magnitude, repetition rate, average discharge power, and average discharge current of PD in specimens with large voids were found to be larger than the others in this experiment. The smaller specimens had voids when the magnitude and number of PDs were reduced.

• Proceedings of the Korean Society of Propulsion Engineers Conference
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• 2017.05a
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• pp.521-528
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• 2017

In this paper, the numerical analysis for heat conduction of silica/phenolic composite material, which is used for solid rocket nozzle liner or insulator, was conducted. 1-D Finite Difference Method for the analysis of silica/phenolic during the firing of solid rocket motor was used to calculate the heat conduction considering the surface ablation and the thermal decomposition. The boundary condition at the nozzle wall took into account the convective heat transfer, which was obtained by integration equation. The numerical results of the surface ablation and char depth were compared with the results of test motor that is TPEM-10. It was found that the result of calculation is favorably agreed with the thermal response of test motor.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2010.06a
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• pp.353-353
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• 2010

본 논문에서는 소스와 드레인의 형성에 있어서 implantation 이 아닌 silicide를 형성시켜서 최고온도 $500^{\circ}C$가 넘지않는 저온공정을 실현하였고, silicon-on-insulator (SOI) 기판이 아닌 solid phase crystallization (SPC) 결정화 방법을 이용하여 결정화 시킨 SPC-TFT 기판을 사용하였다. Silicide 의 형성은 pt를 증착하여 furnace에서 열처리를 실시하여 형성하였다.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 1998.11a
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• pp.85-88
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• 1998

Light-emitting diode(LEDs), diode arrays, and phosphor display panels are finding increased use in a variety of commercial applications. Present and anticipated application of these devices include solid state indicator(e.g., digital clocks, meter readout) and display systems(e.g., instrument panels, TV display), the application being determined by the light -output capability and size availability(cost) of the particular device. In this work, Phosphor based on ZnS:Cu are used. Relation by luminance with the thickness of insulating layer and phosphor layer are discussed. Increased thickness of insulating layer are stable on voltage to 300V. By considering thickness and voltage, optimal structure and thickness are investigated. Also in order to maximize even surface emission, various sieving process are introduced. Very similar phosphor particle size is selected. Luminance by various wave intensity is also investigated. 150cd/m$^2$ luminance are investigated in stable voltage and frequency.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2007.11a
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• pp.60-61
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• 2007

In this paper, the p-channel poly Si thin-film transistors (Poly-Si TFT's) using formed by solid phase crystallization (SPC) on glass substrate were fabricated. And we propose an ONO(Oxide-Nitride-Oxide) multilayer as the gate insulator for poly-Si TFT's to indicate non-volatile memory (NVM) effect. Poly-Si TFT is investigated by measuring the electrical properties of poly-Si films, such as I-V characteristics, on/off current ratio. NVM characteristics is showed by measuring the threshold voltage change of TFT through I-V characteristics.

• Proceedings of the Korean Society of Propulsion Engineers Conference
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• 2010.11a
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• pp.257-260
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• 2010

The purpose of this paper is to introduce a method to predict the case thermal insulation charred and erosion thickness as a function of the exposure time to combustion gases and in solid rocket motors. The sizing of the insulator requires a good estimation of the thermal and mechanical loads at the wall. The method is particularly suitable for internal insulation areas subjected to high radiative, convective heat fluxes and $Al_2O_3$ slag pool. The mathematical approach and lab-scale experiment were intentionally simplified in order to obtain some simple and rapid relationships particularly useful for trade-off studies and thermal insulation preliminary design. The method was utilized to compute the charred and erosion thicknesses of the insulation on the aft chamber domes. A comparison between theoretical and experimental insulator char thicknesses of the motor insulation is reported, indicating the applicability of the predictive method employed.

• The Transactions of The Korean Institute of Electrical Engineers
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• v.61 no.7
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• pp.992-997
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• 2012

In this paper, we were analyzed the vibration characteristics of the three-phase cast resin transformer using less than 50% of load in the field. Most of the cast resin transformer is less than 50% in the domestic field is used for load conditions. Consisting of a solid insulator cast resin transformer is generating lots of noise and vibration. In addition, because it is affected by Joule 's heat is used in light load conditions. As a results, the transformer vibrations at frequencies below about from 200Hz to 500Hz were detected. Vibration velocity depends on the load variations were found. Load up to approximately 20-30% in most cases the vibration velocity was found at 4,000 ${\mu}m/s$ or less, 8,000 ${\mu}m/s$ or more. Vibration frequency at light load conditions were generated at the 120Hz, 240Hz, 360Hz and 480Hz. At the load condition of from 10% to 20%, vibration velocity is higher than another. Most of the vibration velocity were identified at the 1,000 ${\mu}m/s$ or less. Using the vibration frequency and velocity measurements data, the load on the cast resin transformer analyzed the correlation of the burden. Therefore, this data could be found in the vibration characteristics of the light-load conditions. If the field measurements using the data perform diagnostics on the transformer, it's expected to be very effective.

• Proceedings of the Korean Society of Propulsion Engineers Conference
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• 2017.05a
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• pp.1045-1047
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• 2017

In this study, we focused on development of the all-in-one case insulation for end-burning solid rocket motors. Material of insulation used unvulcanized rubber based on EPDM/kevlar. In case of boots insulation, preforms was made by using hot press molding, and then the tape was inserted between two preforms for all-in-one curing in the case. Finally bladder method was applied for curing of insulation.

• Journal of the Korean Society of Propulsion Engineers
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• v.27 no.1
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• pp.9-16
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• 2023

This paper investigated the method to predict a thermal response of internal insulation in a solid rocket motor considering both thermal decomposition and ablation. Changes in properties due to the thermal decomposition, swelling of char layer and movement of decomposition gases inside the material were considered during a modeling. And radiative/convective heat flux from the exhaust gas were applied as boundary conditions, while the chemical ablation of the material surface is modeled with algebraic equations. Test SRM with thermocouples was solved for a validation purpose. The results showed that predicted temperatures have identical trends and values compared to the experimental values. And an error of predicted thermal destruction depth was around 0.1 mm.

• Proceedings of the Korean Vacuum Society Conference
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• 2012.08a
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• pp.343-344
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• 2012

It has been known since the mid 1960s that Ag can be photodissolved in chalcogenide glasses to form materials with interesting technological properties. In the 40 years since, this effect has been used in diverse applications such as the fabrication of relief images in optical elements, micro photolithographic schemes, and for direct imaging by photoinduced Ag surface deposition. ReRAM, also known as conductive bridging RAM (CBRAM), is a resistive switching memory based on non-volatile formation and dissolution of a conductive filament in a solid electrolyte. Especially, Ag-doped chalcogenide glasses and thin films have become attractive materials for fundamental research of their structure, properties, and preparation. Ag-doped chalcogenide glasses have been used in the formation of solid electrolyte which is the active medium in ReRAM devices. In this paper, we investigated the nature of thin films formed by the photo-dissolution of Ag into Ge-Se glasses for use in ReRAM devices. These devices rely on ion transport in the film so produced to create electrically programmable resistance states. [1-3] We have demonstrated functionalities of Ag doped chalcogenide glasses based on their capabilities as solid electrolytes. Formation of such amorphous systems by the introduction of Ag+ ions photo-induced diffusion in thin chalcogenide films is considered. The influence of Ag+ ions is regarded in terms of diffusion kinetics and Ag saturation is related to the composition of the hosting material. Saturated Ag+ ions have been used in the formation of conductive filaments at the solid electrolyte which is the active medium in ReRAM devices. Following fabrication, the cell displays a metal-insulator-metal structure. We measured the I-V characteristics of a cell, similar results were obtained with different via sizes, due to the filamentary nature of resistance switching in ReRAM cell. As the voltage is swept from 0 V to a positive top electrode voltage, the device switches from a high resistive to a low resistive, or set. The low conducting, or reset, state can be restored by means of a negative voltage sweep where the switch-off of the device usually occurs.