• 한국진공학회:학술대회논문집
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• 한국진공학회 2011년도 제40회 동계학술대회 초록집
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• pp.409-409
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• 2011

All solid-state thin film lithium batteries have many applications in miniaturized devices because of lightweight, long-life, low self-discharge and high energy density. The research of cathode materials for thin film lithium batteries that provide high energy density at fast discharge rates is important to meet the demands for high-power applications. Among cathode materials, lithium manganese oxide materials as spinel-based compounds have been reported to possess specific advantages of high electrochemical potential, high abundant, low cost, and low toxicity. However, the lithium manganese oxide has problem of capacity fade which caused by dissolution of Mn ions during intercalation reaction and phase instability. For this problem, many studies on effect of various transition metals have been reported. In the preliminary study, the Sn-substituted LiMn2O4 thin films prepared by pulsed laser deposition have shown the improvement in discharge capacity and cycleability. In this study, the thin films of LiMn2O4 and LiSn0.0125Mn1.975O4 prepared by RF magnetron sputtering were studied with effect of deposition parameters on the phase, surface morphology and electrochemical property. And, all solid-state thin film batteries comprised of a lithium anode, lithium phosphorus oxy-nitride (LiPON) solid electrolyte and LiMn2O4-based cathode were fabricated, and the electrochemical property was investigated.

• Bulletin of the Korean Chemical Society
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• 제33권5호
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• pp.1480-1484
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• 2012

We report a series of novel imidazolium iodides based ionic liquids (NMIPHI, NAIPHI, and NBIPHI) with different functional groups for the development of a quasi-solid type electrolyte for dye-sensitized solar cells (DSSCs). The diffusion coefficients of redox ions ($I^-$ and $I_3{^-}$) are dependent on the molecular weight and it was higher for lighter salts. Among the three ionic liquids, NMIPHI showed highest efficiency of 4.18% when it was used in a liquid electrolyte of a DSSC with $ca$. 6 ${\mu}m$ thick $TiO_2$ mesoporous film. Even though the efficiency was $ca$. 19% lower than that obtained from a liquid electrolyte composed of PMII. When NMIPHI was mixed with PMII with a molar ratio of 1:1 in a solvent free electrolyte, the efficiency of the DSSCs was enhanced compared to that based on pristine PMII.

• 한국전기전자재료학회논문지
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• 제13권4호
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• pp.306-311
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• 2000

The purpose of this study is to research and develop solid polymer electrolyte(SPE) for Li polymer battery. The temperature dependence of conductivity impedance spectroscopy and electrochemical properties of PDF/PAN electrolytes as a function of a mixed ratio were reported for PVDF/PAN based polymer electrolyte films which were prepared by thermal gellification method of preweighed PVDF/PAN plasticizer and Li salt. The conductivity of PVDF/PAN electrolytes was 10$\^$-3/S/cm. 20PVDF5PEN LiCiO$\_$4//PC$\_$10//EC$\_$10/ electrolyte has the better conductivity compared to others. 20PVDF5PANLICIO$\_$4//PC$\_$10//EC$\_$10/ electroylte remains stable up to 5V vs. Li/Li$\^$+/. Steady state current method and ac impedance were used for the determination of transference numbers in PVDF/PAN electrolyte film. The transference number of 20PVDF5PANLiCO$\^$4//PC$\_$10//EC$\_$10/ electrolyte is 0.48.

• 전기화학회지
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• 제3권2호
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• pp.115-120
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• 2000

양극 물질로 산화바나듐 박막, 고체전해질로는 LiPON 박막 그리고 음극 물질로는 리튬 금속 박막을 선택하여 $Li/LiPON/V_2O_5/Pt$ 구조의 전고상 박막 전지를 제작하였고 전지 특성을 평가하였다. 산화바나듐 박막은 여러 산소 분압에서 직류 반응성 스퍼터링으로 증착하여 전기화학적 특성을 분석한 결과 $20\%\;O_2/Ar$비에서 가장 우수한 가역 특성을 나타내었다. 직류 반응성 스퍼터링에 의해 산화바나듐 박막을 제작한 후 진공을 그대로 유지한 상태에서 r.f. 반응성 스퍼터링에 의해 LiPON 고체전해질 박막을 증착하였다. 그 후 dry room내에서 진공 열증착법에 의해 리튬 금속 박막을 증착하여 전고상의 박막 전지를 제작하였다. $Li/LiPON/V_2O_5$ 박막 전지를 전압 범위와 전류 밀도를 변화시켜 충방전 시험을 행한 결과 $7{\mu}A/cm^2$의 전류 밀도와 3.6-2.7 V의 전압범위에서 가장 우수한 가역 특성을 나타내었다. $Li/LiPON/V_2O_5$박막 전지로 초시계를 구동 시켰으며 이는 in-situ공정에 의해 제작된 박막 전지가 소자 에너지원으로의 응용 가능성을 보여 주었다.

• 한국세라믹학회지
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• 제45권12호
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• pp.782-787
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• 2008

Ni-ceria cermets have been extensively investigated as candidates for the anode in intermediate-temperature solid oxide fuel cells. We have used the citric method to synthesize nanocomposite powders consisting of NiO (Ni metal content: $40{\sim}60%$ by volume) highly dispersed in $Ce_{0.9}Gd_{0.1}O_{1.95}$ (CGO). The microstructure characteristics and sintering behaviors of the nanocomposites were investigated. No impurity phases were observed and the shrinkage of these substrates matched well with that of a CGO electrolyte with a specific surface area of $11\;m^2/g$. Densification of the CGO electrolyte layer to $<5\;{\mu}m$ thickness was achieved by co-firing the laminated electrolyte with the porous NiO-CGO substrate at $1400^{\circ}C$ for 6 h.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2012년도 제43회 하계 정기 학술대회 초록집
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• pp.343-344
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• 2012

It has been known since the mid 1960s that Ag can be photodissolved in chalcogenide glasses to form materials with interesting technological properties. In the 40 years since, this effect has been used in diverse applications such as the fabrication of relief images in optical elements, micro photolithographic schemes, and for direct imaging by photoinduced Ag surface deposition. ReRAM, also known as conductive bridging RAM (CBRAM), is a resistive switching memory based on non-volatile formation and dissolution of a conductive filament in a solid electrolyte. Especially, Ag-doped chalcogenide glasses and thin films have become attractive materials for fundamental research of their structure, properties, and preparation. Ag-doped chalcogenide glasses have been used in the formation of solid electrolyte which is the active medium in ReRAM devices. In this paper, we investigated the nature of thin films formed by the photo-dissolution of Ag into Ge-Se glasses for use in ReRAM devices. These devices rely on ion transport in the film so produced to create electrically programmable resistance states. [1-3] We have demonstrated functionalities of Ag doped chalcogenide glasses based on their capabilities as solid electrolytes. Formation of such amorphous systems by the introduction of Ag+ ions photo-induced diffusion in thin chalcogenide films is considered. The influence of Ag+ ions is regarded in terms of diffusion kinetics and Ag saturation is related to the composition of the hosting material. Saturated Ag+ ions have been used in the formation of conductive filaments at the solid electrolyte which is the active medium in ReRAM devices. Following fabrication, the cell displays a metal-insulator-metal structure. We measured the I-V characteristics of a cell, similar results were obtained with different via sizes, due to the filamentary nature of resistance switching in ReRAM cell. As the voltage is swept from 0 V to a positive top electrode voltage, the device switches from a high resistive to a low resistive, or set. The low conducting, or reset, state can be restored by means of a negative voltage sweep where the switch-off of the device usually occurs.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2014년도 제46회 동계 정기학술대회 초록집
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• pp.326-326
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• 2014

It has been known since the mid 1960s that Ag can be photodissolved in chalcogenide glasses to form materials with interesting technological properties. In the 40 years since, this effect has been used in diverse applications such as the fabrication of relief images in optical elements, micro photolithographic schemes, and for direct imaging by photoinduced Ag surface deposition. ReRAM, also known as conductive bridging RAM (CBRAM), is a resistive switching memory based on non-volatile formation and dissolution of a conductive filament in a solid electrolyte. Especially, Ag-doped chalcogenide glasses and thin films have become attractive materials for fundamental research of their structure, properties, and preparation. Ag-doped chalcogenide glasses have been used in the formation of solid electrolyte which is the active medium in ReRAM devices. In this paper, we investigated the nature of thin films formed by the photo-dissolution of Ag into Ge-Se glasses for use in ReRAM devices. These devices rely on ion transport in the film so produced to create electrically programmable resistance states [1-3]. We have demonstrated functionalities of Ag doped chalcogenide glasses based on their capabilities as solid electrolytes. Formation of such amorphous systems by the introduction of Ag+ ions photo-induced diffusion in thin chalcogenide films is considered. The influence of Ag+ ions is regarded in terms of diffusion kinetics and Ag saturation is related to the composition of the hosting material. Saturated Ag+ ions have been used in the formation of conductive filaments at the solid electrolyte which is the active medium in ReRAM devices. Following fabrication, the cell displays a metal-insulator-metal structure. We measured the I-V characteristics of a cell, similar results were obtained with different via sizes, due to the filamentary nature of resistance switching in ReRAM cell. As the voltage is swept from 0 V to a positive top electrode voltage, the device switches from a high resistive to a low resistive, or set. The low conducting, or reset, state can be restored by means of a negative voltage sweep where the switch-off of the device usually occurs.

• Journal of Electrochemical Science and Technology
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• 제13권3호
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• pp.390-397
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• 2022

The use of microwaves as the energy source for synthesis and sintering of ceramics offers substantial advantages compared to conventional gas-fired and electric resistance furnaces. Benefits include much shorter processing times and reaching the sintering temperature more quickly, resulting in superior final product quality. Most oxide ceramics poorly interact with microwave irradiation at low temperatures; thus, a more complex setup including a susceptor is needed, which makes the whole process very complicated. This investigation pursued a new approach, which enabled us to use microwave irradiation directly in poorly coupled oxides. In many solid-state electrochemical devices, the support is either metal or can be reduced to metal. Metal powders in the support can act as an internal susceptor and heat the entire cell. Then sufficient interaction of microwave irradiation and ceramic material can occur as the sample temperature increases. This microwave heating and exothermic reaction of oxidation of the support can sinter the ceramic very efficiently without any external susceptor. In this study, yttria stabilized zirconia (YSZ) and a Ni-YSZ cermet support were used as an example. The cermet was used as the support, and a YSZ electrolyte was coated and sintered directly using microwave irradiation without the use of any susceptor. The results were compared to a similar cell prepared using a conventional electric furnace. The leakage test and full cell power measurement results revealed a fully leak-free electrolyte. Scanning electron microscopy and density measurements show that microwave sintered samples have lower open porosity in the electrode support than conventional heat treatment. This technique offers an efficient way to directly use microwave irradiation to sinter thin film ceramics without a susceptor.

• 한국세라믹학회지
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• 제41권12호
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• pp.900-906
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• 2004

현재까지 개발되어 온 고체산화물 연료전지는 전해질로 사용되는 산소이온전도성 산화물의 저온에서의 낮은 전도도로 인해 그 사용영역이 제한되어 왔으며, 기판재료가 연료가스 확산층으로 사용되어야 한다는 점 때문에 저온작동을 위한 박막화 역시 명확한 한계를 가지고 있다. 이러한 문제점은 고도의 평활도를 갖는 균일한 나노기공성 기판재를 도입함으로써 해결될 수 있으며, 본 연구에서는 나노기공성 기판에 비정질 금속박막을 증착/산화하는 방안을 제시한다. 초박막형 성공정으로서, 산화 후 산소이온전도성 산화물을 구성하는 합금 타겟을 장착한 DC-magnetron sputter를 사용하여 $20{\sim}200nm$의 기공크기를 갖는 나노기공성 양극산화 알루미나 기판에 비정질 금속합금막을 형성하여 산화/열처리 과정을 거쳐 초박막 산화물 전해질의 제조공정을 실현하였다. 얻어진 박막의 가스투과특성, 입자/입계의 관찰, 상전이에 따른 결정구조/미세구조변화를 관찰하여 초박막 증착 및 전해질의 나노구조제어에 필요한 제반 기본물성데이터를 확보하였다.

• 한국재료학회지
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• 제13권2호
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• pp.115-119
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• 2003

The thick film type sensor having Pt/Na Super Ionic Conductor(NASICON) solid electrolyte/Pt/$Na_2$$SO_4$/Pt catalyst system for $SO_2$gas was fabricated by screen-print method. The phase of Na Super Ionic Conductor solid electrolyte sintered at different temperature of 1050, 1150,$ 1250^{\circ}C$ and for different time of 1.5, 2.5, 3.5 hr were investigated by XRD. The Electromotive Force variation of the sensor with $SO_2$concentrations and operating temperatures were investigated. The major phase of Na Super Ionic Conductor film sintered at 115$0^{\circ}C$ for 3.5 hr was sodium zirconium silicon phosphate($Na_3$Zr$_2$$Si_2$PO$_{12}$). The Nernst's slope of Na Super Ionic Conductor sensor for $SO_2$gas with the variation of concentration from 10 to 100 ppm was 167.14 ㎷/decade at the operating temperature of $500 ^{\circ}C$. The increase of oxygen partial pressure was not affected to the variation of Nernst's slope.e.