• The Journal of Korean Institute of Communications and Information Sciences
• /
• v.24 no.6B
• /
• pp.1042-1047
• /
• 1999

In this paper, two kinds of digital predistorters are proposed and their performances are analyzed in order to minimize ACI and SNR degradation caused by nonlinearly amplified TC-16QAM signal and to transmit high speed data in power and bandwidth limited land mobile satellite channel. Our simulation results show that LUT predistorter reduces the out-of-band ACI more efficiently as compared to intersymbol interpolated predistorter. Regarding the reduction of in-band SNR and total power intersymbol interpolated predistorter outperforms LUT predistorter. In the simulation mobile satellite channel and nonlinear HPA are modeled by Rician channel and Fujitsu SSPA, respectively.

• The Journal of Korean Institute of Electromagnetic Engineering and Science
• /
• v.23 no.11
• /
• pp.1239-1247
• /
• 2012

In this paper, design and fabrication of solid state power amplifier(SSPA) using GaN HEMT chip for X-band frequency are presented. The SSPA consists of the power supply for stable power and the control unit for communication and controlling the internal module, the RF Part to amplify RF signal, In particular the adopted active device for the RF Parts is GaN HEMT Bare chip of TriQuint company, the RF parts consists of pre-stage, drive-stage, main power-stage and each amplifier is designed with input and out matching circuit. The developed power amplifier demonstrated more than 300 W peak output power in condition of 26 % duty, max. pulse width 100us for the X-band frequency( 500 MHz bandwidth) and can apply to marine radar systems.

• Proceedings of the KIPE Conference
• /
• 2010.07a
• /
• pp.256-258
• /
• 2010

MPM(Microwave Power Module)은 진공 전력증폭기인 진행파관(TWT,Traveling Wave Tube)과 반도체 전력증폭기(SSA, Solid State Amplifier)를 결합한 구조로서, 미세한 RF신호를 입력 받아 고출력의 RF 신호로 증폭하는 장치이다. 본 논문은 MPM을 구동하기 위해, 필요한 수 kV이상의 높은 전압을 TWT에 공급해주는 고전압 전원공급기(HVPS, High Voltage Power Supply)에 관한 것이다. Main Topology는 Resonant Phase Shift Full Bridge Converter이며, 승압의 효과를 높이기 위해 2차 측에는 Voltage Multiplier를 사용하였다. MPM을 구동하는데 필요한 전압인Cathode(-4kV), FE_Bias(-5.25kV), Collector(-2kV)를 생성하며, FE_ON, OFF신호에 따라 고전압 스위칭 동작을 하여, RF 증폭을 제어 할 수 있다. 최종적으로 Prototype을 제작하고, 고찰된 실험결과를 제시하여 개발된 HVPS의 우수성을 검증한다.

• Journal of the Korea Institute of Information and Communication Engineering
• /
• v.2 no.3
• /
• pp.275-282
• /
• 1998

In this paper, we designed and fabricated 5-stage microwave solid state power amplifier using balanced amplifier scheme for X-band electronic radar reflector. The used substrate is FR4 and the used active devices are FHX35LC, FLK012WF and FLK022WG. The circuit design and optimization had been carried out through the microwave CAD program CNL2 The measured values show 46dB in gain, input return loss -14.2dB, output return loss -16.6dB and IM3 is 32dBc at designed bandwidth. The measured results are almost agreed with the simulated values.

• Current Optics and Photonics
• /
• v.3 no.2
• /
• pp.105-110
• /
• 2019

The visible-light communication (VLC) system is a promising candidate to fulfill the present and future demands for a high-speed, cost-effective, and larger-bandwidth communication system. VLC modulates the visible-light signals from solid-state LEDs to transmit data between transmitter and receiver, but the broadcasting and the line-of-sight propagation nature of visible-light signals make VLC a communication system with a limited operating range. We present a novel architecture to increase the operating range of VLC. In our proposed architecture, we guide the visible-light signals through the fiber and amplify the dissipated signals using visible-light fiber amplifiers (VLFAs), which are the most important and the novel devices needed for the proposed architecture of the VLC. Therefore, we design, analyze, and apply a VLFA to VLC, to overcome the inherent drawbacks of VLC. Numerical results show that under given constant conditions, the VLFA can amplify the signal up to 35.0 dB. We have analyzed the effects of fiber length, active ion concentration, pump power, and input signal power on the gain and the noise figure (NF).

• The Journal of the Institute of Internet, Broadcasting and Communication
• /
• v.22 no.2
• /
• pp.35-42
• /
• 2022

In this paper, a method to increase the combining efficiency and isolation of the combiner, the core module of SSPA (solid state amplifier), was studied. Specifically, the isolation was secured by matching the common port and the isolation port in the waveguide combiner. The matching structure for matching is in the form of a circular disk and is engraved inside the waveguide combiner. The structure is very simple, so it is possible to secure stable performance. And this structure showed more than 60 times higher critical power performance compared to previous studies, confirming that it is suitable for high output. And by combining 1-stage T-junction and 2, 3 stage MagicT combiner, miniaturization was achieved and the combining efficiency was optimized by reducing the insertion loss. The fabricated waveguide coupler obtained an isolation of 16dB or more and a coupling efficiency of 86.2%.

• Proceedings of the KAIS Fall Conference
• /
• 2010.11a
• /
• pp.168-171
• /
• 2010

본 논문에서는 GaN HEMT 소자를 이용한 고출력 고효율 특성을 가지는 광대역 SSPA의 개발을 다루고 있다. 개발한 SSPA는 8W 급과 15W 급의 GaN HEMT 소자를 사용하여 Pre-Drive 증폭단을 구성하였으며, Drive 증폭단은 50W/150W급 GaN HEMT 소자를 직/병렬구조로 사용하였다. Main 증폭단은 4-way 분배기와 결합기를 이용한 Balanced Structure를 적용하여 높은 출력을 구현하였으며, 안정적인 동작을 위하여 음(-)전원 제어 회로와 출력신호 검출 회로를 포함하고 있다. 제작된 SSPA의 사용가능 대역은 2.9GHz~3.3GHz로 단일전원을 사용하고 있으며 100us 펄스 폭, 10% Duty Cycle 조건에서 60dB의 전압이득, 1kW 출력과 약 28% 효율 특성을 가지는 것으로 측정되었다. 본 논문에서 개발한 SSPA는 S-대역을 사용하는 레이더시스템의 송신단에 적용될 수 있다.

• ETRI Journal
• /
• v.46 no.4
• /
• pp.595-603
• /
• 2024

This paper presents methods for reducing the peak-to-average power ratio (PAPR) of the orthogonal time frequency space (OTFS) signal. These methods mainly consist of two operations: symbol interferometry (SI) and either 𝜇-law or A-law companding. SI spreads the data of one OTFS symbol onto all symbols and is implemented using a simple inverse fast Fourier transform operation on each OTFS symbol. During the second operation, the PAPR of the OTFS signal is significantly reduced. For our performance analysis, the complementary cumulative distribution function, probability density function, and bit error rate are illustrated through simulations performed in MATLAB. The performance is also analyzed using a solid-state power amplifier at the transmitter and compared with OTFS, 𝜇-law-based OTFS, and SI OTFS systems. The results indicate that the proposed OTFS system achieves a low PAPR.

• Journal of the Korea Institute of Military Science and Technology
• /
• v.19 no.5
• /
• pp.574-581
• /
• 2016

Trend on high-power GaN(Gallium Nitride) SSPA(Solid-State Power Amplifier) and its availability in miniature radar systems are presented. There are numerous studies on high-power GaN devices since they have some characteristics of high-breakdown voltage, high power density, and high-temperature stability. Recent scaled GaN technology makes it possible to apply it in SSPAs for W- and G-band applications, with increasing its maximum frequency. In addition, it leads to downsizing and power-efficiency improvement of SSPAs, which means that GaN SSPAs can be available in miniature radar systems. This study also shows radar performance and comparison in the case of using such SSPAs at three frequency bands of Ku, Ka, and W. Finally, we demonstrate prospects of scaled GaN SSPAs in future miniature radar systems.

• Journal of the Korean Institute of Telematics and Electronics
• /
• v.21 no.4
• /
• pp.31-36
• /
• 1984

Various efforts have been dedicated to obtain the negative impedances in microwave frequencies with semiconductor devices by many scientists for f: some passed decades, and as a result, many solid state microwave devices have been developed. But they all have much less maximum power ratings with respect to the vaccum tubes. In this paper, a MOSFET is proposed and studied, which have a periodic structure of multigates on the semiconductor via insulator. The hish electric field in the channel induces a voltage distribution on the gates by electrostatic coupling, and the polarization so induced between the gates is able to give a space modulation of the velocity of carriers or the current density in the channel, and as a natural consequence, a microwave amplifier with higher power ratings can be expected.