• Title/Summary/Keyword: Solar conversion efficiency

Search Result 856, Processing Time 0.031 seconds

Coating Property of Hybrid Structured Photo-Electrode to Increase Dye-Sensitized Solar Cells Efficiency (염료감응형 태양전지의 효율 향상을 위한 하이브리드 구조 광전극의 코팅특성)

  • Kim, Min-Hee;Lee, Hyung-Woo;Jeong, Young-Keun
    • Journal of Powder Materials
    • /
    • v.17 no.6
    • /
    • pp.449-455
    • /
    • 2010
  • The hybrid structured photo-electrode for dye-sensitized solar cells was fabricated based on the composites of $TiO_2$ nanoparticles and nanowires. Three samples with different hybrid structures were prepared with 17 vol%, 43 vol%, and 100 vol% nanowires. The energy conversion efficiency was enhanced from 5.54% for pure nanoparticle cells to 6.01% for the hybrid structure with 17 vol% nanowires. For the hybrid structured layers with high nanowires concentration (43 vol% and 100 vol%), the efficiency decreased with the nanowire concentration, because of the decrease of specific surface area, and of thus decreased current density. The random orientations of $TiO_2$ nanowires can be preserved by the doctor blade process, resulted in the enhanced efficiency. The hybrid structured $TiO_2$ layer can possess the advantages of the high surface area of nanoparticles and the rapid electron transport rate and the light scattering effect of nanowires.

The Research of Solar Cells Applying Ni/Cu/Ag Contact for Low Cost & High Efficiency (태양전지의 저가격.고효율화를 위한 Ni/Cu/Ag 전극에 관한 연구)

  • Cho, Kyeong-Yeon;Lee, Ji-Hun;Lee, Soo-Hong
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
    • /
    • 2009.06a
    • /
    • pp.444-445
    • /
    • 2009
  • The metallic contact system of silicon solar cell must have several properties, such as low contact resistance, easy application and good adhesion. Ni is shown to be a suitable barrier to Cu diffusion as well as desirable contact metal to silicon. Nickel monosilicide(NiSi) has been suggested as a suitable silicide due to its lower resistivity, lower sintering temperature and lower layer stress than $TiSi_2$. Copper and Silver can be plated by electro & light-induced plating method. Light-induced plating makes use the photovoltaic effect of solar cell to deposit the metal on the front contact. The cell is immersed into the electrolytic plating bath and irradiated at the front side by light source, which leads to a current density in the front side grid. Electroless plated Ni/ Electro&light-induced plated Cu/ Light-induced plated Ag contact solar cells result in an energy conversion efficiency of 16.446 % on $0.2\sim0.6\;{\Omega}{\cdot}cm$, $20\;\times\;20\;mm^2$, CZ(Czochralski) wafer.

  • PDF

Development of Inorganic Metal Oxide based Hole-Transporting Layer for High Efficiency Perovskite Solar Cell (고효율 페로브스카이트 태양전지용 무기 금속 산화물 기반 정공수송층의 개발)

  • Lee, Haram;Mai, Cuc Thi Kim;Jang, Yoon Hee;Lee, Doh-Kwon
    • Current Photovoltaic Research
    • /
    • v.8 no.2
    • /
    • pp.60-65
    • /
    • 2020
  • In perovskite solar cells with planar heterojunction configuration, selection of proper charge-transporting layers is very important to achieve stable and efficient device. Here, we developed solution processible Cu doped NiOx (Cu:NiOx) thin film as a hole-transporting layer (HTL) in p-i-n structured methylammonium lead trihalide (MAPbI3) perovskite solar cell. The transmittance and thickness of NiOx HTL is optimized by control the spin-coating rate and Cu is additionally doped to improve the surface morphology of undoped NiOx thin film and hole-extraction properties. Consequently, a perovskite solar cell containing Cu:NiOx HTL with optimal doping ratio of Cu exhibits a power conversion efficiency of 14.6%.

Investigations on Microcrystalline Silicon Films for Solar Cell Application

  • Hwang, Hae-Sook;Park, Min-Gyu;Ruh, Hyun;Yu, Hyun-Ung
    • Bulletin of the Korean Chemical Society
    • /
    • v.31 no.10
    • /
    • pp.2909-2912
    • /
    • 2010
  • Hydrogenated microcrystalline silicon (${\mu}c$-Si:H) thin film for solar cells is prepared by plasma-enhanced chemical vapor deposition and physical properties of the ${\mu}c$-Si:H p-layer has been investigated. With respect to stable efficiency, this film is expected to surpass the performance of conventional amorphous silicon based solar cells and very soon be a close competitor to other thin film photovoltaic materials. Silicon in various structural forms has a direct effect on the efficiency of solar cell devices with different electron mobility and photon conversion. A Raman microscope is adopted to study the degree of crystallinity of Si film by analyzing the integrated intensity peaks at 480, 510 and $520\;cm^{-1}$, which corresponds to the amorphous phase (a-Si:H), microcrystalline (${\mu}c$-Si:H) and large crystals (c-Si), respectively. The crystal volume fraction is calculated from the ratio of the crystalline and the amorphous phase. The results are compared with high-resolution transmission electron microscopy (HR-TEM) for the determination of crystallinity factor. Optical properties such as refractive index, extinction coefficient, and band gap are studied with reflectance spectra.

A Study on the Optical and Electrical Characteristics of Multi-Silicon Using Wet Texture (습식텍스쳐를 이용한 다결정 실리콘 광학적.전기적 특성 연구)

  • Han, Kyu-Min;Yoo, Jin-Su;Yoo, Kwon-Jong;Lee, Hi-Deok;Choi, Sung-Jin;Kwon, Jun-Young;Kim, Ki-Ho;YI, Jun-Sin
    • 한국태양에너지학회:학술대회논문집
    • /
    • 2009.11a
    • /
    • pp.383-387
    • /
    • 2009
  • Multi-crystalline silicon surface etching without grain-boundary delineation is a challenging task for the fabrication of high efficiency solar cell. The use of sodium hydroxide - sodium hypochlorite (NaOH40% + NaOCl 12%) solution for texturing multi-crystalline silicon wafer surface in solar cell fabrication line is reported in this article. in light current-voltage results, the cells etched in NaOH 40% + NaOCl 12% = 1:2 exhibited higher short circuit current and open circuit voltage than those of the cells etched in NaOH 40% + NaOCl 12% = 1:1 solution. we have obtained 15.19% conversion efficiency in large area(156cm2) multi-Si solar cells etched in NaOH 40% + NaOCl 12% = 1:1 solution.

  • PDF

Electrode formation using Light induced electroless plating in the crystalline silicon solar cells

  • Jeong, Myeong-Sang;Gang, Min-Gu;Lee, Jeong-In;Kim, Dong-Hwan;Song, Hui-Eun
    • Proceedings of the Korean Vacuum Society Conference
    • /
    • 2016.02a
    • /
    • pp.347.1-347.1
    • /
    • 2016
  • Screen printing is commonly used to form the electrode for crystalline silicon solar cells. However, it has caused high resistance and low aspect ratio, resulting in decrease of conversion efficiency. Accordingly, Ni/Cu/Ag plating method could be applied for crystalline silicon solar cells to reduce contact resistance. For Ni/Cu/Ag plating, laser ablation process is required to remove anti-reflection layers prior to the plating process, but laser ablation results in surface damage and then decrease of open-circuit voltage and cell efficiency. Another issue with plating process is ghost plating. Ghost plating occurred in the non-metallized region, resulting from pin-hole in anti-reflection layer. In this paper, we investigated the effect of Ni/Cu/Ag plating on the electrical properties, compared to screen printing method. In addition, phosphoric acid layer was spin-coated prior to laser ablation to minimize emitter damage by the laser. Phosphorous elements in phosphoric acid generated selective emitter throughout emitter layer during laser process. Then, KOH treatment was applied to remove surface damage by laser. At this step, amorphous silicon formed by laser ablation was recrystallized during firing process and remaining of amorphous silicon was removed by KOH treatment. As a result, electrical properties as Jsc, FF and efficiency were improved, but Voc was lower than screen printed solar cells because Voc was decreased due to surface damage by laser process. Accordingly, we expect that efficiency of solar cells could be improved by optimization of the process to remove surface damage.

  • PDF

Electrochemical Characterization of Fluorine Doped TiO2 Dye-Sensitized Solar Cells (불소 도핑 TiO2 염료감응형 태양전지의 전기화학적 특성)

  • Lee, Sung Kyu;Im, Ji Sun;Lee, Young-Seak
    • Applied Chemistry for Engineering
    • /
    • v.22 no.5
    • /
    • pp.461-466
    • /
    • 2011
  • In this study, the fluorine doped $TiO_2$ was prepared as a photoelectrode in order to improve the efficiency of dye-sensitized solar cells and estimated the electrochemical characterizations. The energy conversion efficiency of the prepared dye-sensitized solar cells using fluorine doped $TiO_2$ was calculated from a current-voltage curve. The efficiency of prepared dye-sensitized solar cells was improved by about maximum three times by F-doping on $TiO_2$. It was suggested that the efficiency of dye-sensitized solar cells was improved by hybrid semiconductors of $TiO_2/TiOF_2$ in photoelectrode based on reduced $TiOF_2$ energy level via fluorine doping. It can be confirmed that the electron transport was faster but the electron recombination was slower by doping fluorine on $TiO_2$ in photoelectrode through intensity-modulated photocurrent spectroscopy and intensity-modulated photovoltage spectroscopy analysis.

Stacking of functional inks for organic solar cell using inkjet printing (잉크젯 프린팅을 이용한 유기태양전지용 기능성 잉크의 적층)

  • Kim, Myong-Ki;Hwang, Jun-Young;Lee, Sang-Ho;Kang, Heui-Seok;Kang, Kyung-Tae;Kim, Jong-Seok;Cho, Young-Joon
    • 한국신재생에너지학회:학술대회논문집
    • /
    • 2008.05a
    • /
    • pp.398-401
    • /
    • 2008
  • Inkjet printing is commonly used in the controlled deposition of solutions of functional materials in specific locations on a substrate, and it can provide easy and fast deposition of polymer films over a large area. which could become a way to manufacturer low cost solar cells. In the present study, inkjet printing technology is adopted to deposit functional layers of PEDOT/PSS solutions and P3HT/PCBM blends for organic solar cell. The results show that merging of separately deposited ink droplets into a continuous, pinhole-free organic thin film could be achieved by a balance between ink property and substrate treatment. As a result, a power conversion efficiency of 2.0% has been accomplished a solar cells applying inkjet technology.

  • PDF

Fabrication of Flexible CIGS thin film solar cells using STS430 substrate (STS430 기판을 이용한 Flexible CIGS 박막 태양전지 제조)

  • Jung, Seung-Chul;Ahn, Se-Jin;Yun, Jae-Ho;Yoon, Kyung-Hoon
    • 한국신재생에너지학회:학술대회논문집
    • /
    • 2008.05a
    • /
    • pp.436-437
    • /
    • 2008
  • Flexible CIGS thin film solar cell was fabricated using STS430 plate as a flexible substrate in this work. A diffusion barrier layer of $SiO_2$ thin film was deposited on STS430 substrate by PECVD followed by deposition of double layered Mo back contact. After depositing CIGS absorber layer by co-evaporation, CdS buffer layer by chemical bath deposition, ZnO window layer by RF sputtering and Al electrode by thermal evaporation, the solar cell fabrication processes were completed and its performance was evaluated. Corresponding solar cell showed an conversion efficiency of 8.35 % with $V_{OC}$ of 0.52 V, $J_{SC}$ of 26.06 mA/$cm^2$ and FF of 0.61.

  • PDF

Effects of Ga contents on the performance of CIGS thin film solar cells fabricated by co-evaporation technique (Ga 조성이 동시진공 증발법으로 제조된 CIGS 태양전지 특성에 미치는 영향)

  • Jung, Sung-Hun;Yun, Jae-Ho;Ahn, Se-Jin;Yoon, Kyung-Hoon;Kim, Dong-Hwan
    • 한국신재생에너지학회:학술대회논문집
    • /
    • 2008.05a
    • /
    • pp.438-440
    • /
    • 2008
  • Effects of Ga contents of CIGS absorber layer on the performance of thin films solar cells were investigated. As Ga content increased, the grain size of CIGS films decreased presumably because Ga diffusion during 2nd stage of co-evaporation process is more difficult than In diffusion. Performances of corresponding solar cell show systematic dependence on Ga content in which open circuit voltage increases and short circuit current and fill factor decrease as Ga contents increases. At a optimal condition of Ga/(In+Ga)=0.27, the solar cell shows a conversion efficiency of 15.6% with $V_{OC}$ of 0.625 V, $J_{SC}$ of 35.03 mA/$cm^2$ and FF of 71.3%.

  • PDF