• Transactions on Electrical and Electronic Materials
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• v.16 no.1
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• pp.5-9
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• 2015

Optical and electrical properties were studied for Antimony doped tin oxide thin films from precursors containing 10, 30, 50, and 70 atom% of Sb deposited on bare sodalime silica, barrier layer coated sodalime silica, and pure silica glass substrates by sol-gel spinning technique. The direct band gaps were found to vary from 3.13~4.12 eV when measured in the hv range of 2.5~5.0 eV, and varied from 4.22~5.08 eV when measured in the range of 4.0~7.0 eV. Indirect band gap values were in the range of 2.35~3.11 eV. Blue shift of band gap with respect to bulk band gap and Moss-Burstein shift were observed. Physical thickness of the films decreased with the increase in % Sb. Resistivity of the films deposited on SLS substrate was in the order of $10^{-2}$ ohm cm. Sheet resistance of the films deposited on barrier layer coated soda lime silica glass substrate was found to be relatively less.

• Journal of the Korean institute of surface engineering
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• v.32 no.3
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• pp.456-460
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• 1999

Transparent conducting tin (IV) oxide thin films have been studies and developed for the electrode materials of solar cell substrate. Fabrication of tin oxide thin films by sol-gel method is process development of lower cost photovoltaic solar cell system. The research is focused on the establishment of process condition and development of precursor. The precursor solution was made of tin isopropoxide dissolved in isopropyl alcohol. The hydrolysis rate was controlled by addition of triethanolamine. Dip and spin coating technique were applied to coat tin oxide on borosilicate glass. The resistivity of the thin film was lower than 0.1Ω-cm and the transmittance is higher than 90% in a visible range.

• Bulletin of the Korean Chemical Society
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• v.22 no.12
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• pp.1366-1370
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• 2001

Thin films of the SiO2-TiO2-PDMS composite material have been prepared by the sol-gel dip coating method. Acid catalyzed solutions of tetraethoxy silane (TEOS) and polydimethyl siloxane (PDMS) mixed with titanium isopropoxide Ti(OiPr) were used as precursors. The optical and structural properties of the organically modified 70SiO2-30TiO2 composite films have been investigated with Fourier Transform Infrared Spectroscopy (FT-IR), UV-Visible Spectroscopy (UV-Vis), Differential Thermal Analysis (DTA) and prism coupling technique. The films coated on the soda-lime-silicate glass exhibit 450-750 nm thickness, 1.56-1.68 refractive index and 88-94% transmittance depending on the experimental parameters such as amount of PDMS, thermal treatment and heating rate. The optical loss of prepared composite film was measured to be about 0.34 dB/cm.

• The Journal of Korean Academy of Prosthodontics
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• v.44 no.5
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• pp.617-627
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• 2006

Statement of problem: HA has been used as a coating material on Ti implants to improve osteoconductivity. However. it is difficult to form uniform HA coatings on implants with complex surface geometries using a plasma spraying technique. Purpose : To determine if Ti6Al4V sintered porous-surfaced implants coated with HA sol-gel coated and hydrothermal treated would accelerate osseointegration. Materials and Methods : Porous implants which were made by electric discharge were used in this study. Implants were anodized and hydrothermal treatment or HA sol-gel coating was performed. Hydrothermal treatment was conducted by high pressure steam at $300^{\circ}C$ for 2 hours using a autoclave. To make a HA sol, triethyl phosphite and calcium nitrate were diluted and dissolved in anhydrous ethanol and mixed. Then anodized implant were spin-coated with the prepared HA sols and heat treated. Samples were soaked in the Hanks solution with pH 7.4 at $37^{\circ}C$ for 6 weeks. The microstructure of the specimens was observed with a scanning electron microscope (SEM), and the composition of the surface layer was analyzed with an energy dispersive spectroscope (EDS). Results : The scanning electron micrographs of HA sol-gel coated and hydrothermal treated surface did not show any significant change in the size or shape of the pores. After immersion in Hanks' solution the precipitated HA crystals covered macro- and micro-pores The precipitated Ca and P increased in Hanks' solution that surface treatment caused increased activity. Conclusion : This study shows that sol-gel coated HA and hydrothermal treatment significantly enhance the rate of HA formation due to the altered surface chemistry.

• Journal of the Korean Ceramic Society
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• v.36 no.9
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• pp.893-900
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• 1999

Silica films were prepared on Si single crystal substrates by sol-gel process using TEOS as starting materials. Films were fabricated by a spin coating technique. Sol solutions were prepared by varying the compositions of CH3OH, H2O and DMF with fixed molar ratio of TEOS=1, HCl=0.05(mol). Wetting behavior viscosity of solutions gelation time thickness of films and cracking behavior were investigated with the various solution compositions. Wetting behaviors of solutions depended on the solution compositions mixing method and mixing rate. The optimum composition of sol was TEOS : DMF ; CH3OH: H2O :HCl=1:2:4:4:0.05(mol) and the mixing rate of solution was optimized at 1 ml/min. Viscosity of solutions were controlled by choosing a reaction time(elapsed time after mixing) at a room temperature so that we could get up to 800nm thick film The surface roughness was getting poor when thickness of films was thicker than 500nm. Thickness of coated films were increased with decreasing amount of CH3OH. The best surface roughness was obtained at the content of CH3OH 4 mol. The shortest gelation time was obtained with the content of CH3OH 8 mol. Crack-free filkms were fabricated when sintered at 500$^{\circ}C$ for 1 hr with heating rate of 0.6$^{\circ}C$/min.

• Journal of the Korean Ceramic Society
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• v.33 no.10
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• pp.1101-1108
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• 1996

No-doped PZT thin films have been fabricated on Pt/Ti/SiO2/Si substrate using Sol-Gel technique. A fast annealing metho (three times of intermediate and final annealing) was used for the preparation of multi-coated 1800$\AA$ thick Nb-doped PZT thin films. As Nb doping percent was increased leakage current was lowered approximately 2 order but dielectic properties were degraded due to the appearance of pyrochlore phase and domain pinning. Futhermore the increase of the final annealing temperature up to 74$0^{\circ}C$lowered the pyrochlore phase content resulting in enhancing the dielectric properties of the Nb doped films. The 3%-Nb doped PZT thin films with 5% excess Pb showed a capacitance density of 24.04 fF/${\mu}{\textrm}{m}$2 a dielectric loss of 0.13 a switchable polarization of 15.84 $\mu$C/cm2 and a coercive field of 32.7 kV/cm respectively. The leakage current density of the film was as low as 1.47$\times$10-7 A/cm2 at the applied voltage of 1.5 V.

• Journal of the Korean Ceramic Society
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• v.42 no.5 s.276
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• pp.333-337
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• 2005

In order to improve the performance of green emitting phosphors for plasma display panel, the $Zn_2SiO_4:Mn,Al$ phosphors were synthesized using sol-gel technique and studied using SEM and VUV photoluminescence spectrometer. pH values of the starting solutions (pH = 0.5$\~$2.34) were controled by HCl as the catalysis of hydrolysis and wet gels were dried at $80^{\circ}C$ and $120^{\circ}C$, respectively. We investigated the effects of pH and drying temperatures during sol-gel processes. The results indicated that the phosphor prepared at pH = 1 showed the maximum emission intensity in both drying conditions and the effect of pH of the starting solution on morphology were increased with particle size as HCl and phosphor dried at high temperature showed more spherical and smaller particles than at low.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2000.07a
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• pp.814-819
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• 2000

The progress in the field of electronic materials has been especially significant for applications involving a range of electrical properties. Its importance is increasing with the increasing demand for integrated circuits. The sol-gel technique has been used for many years, and the metal alkoxides have featured prominently as source materials. The method consist of making a homogeneous solution of the component metal alkoxides in a suitable solvent, usually the parent alcohol; and then causing the hydrolysis under controlled conditions to produce a gel containing the hydrated metal oxide. The gel is then dried, and fired to produce a ceramic or glassy material at a temperature much lower than that required by the conventional melting process. This project consists of important theoretical considerations, processing techniques and applications related to electrophoresis derived thin films. In the electrophoretic process a metal alkoxide solution is gelled through hydrolysis-polymerization and converted the gel thin layer to an oxide by heating at relatively low temperatures.

• Journal of the Korean Ceramic Society
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• v.32 no.1
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• pp.63-70
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• 1995

A crack-free ceramic composite membrane with micropores has been synthesized by the pressurized sol-gel coating technique using the mixed Al2O3-SiO2 sols. The mixed sols were prepared by mixing nanoparticulate SiO2 and boehmite sols. These sols were more stable at lower pH, but very unstable when their copositions were in the range of 50~75mol% of SiO2 at the same pH. The mixed Al2O3-SiO2 membrane prepared from the mixed sol (0.2mol/$\ell$ of solid content and pH=2) containing 40mol% of SiO2 had the mean pore radius of 0.80nm and the specific surface area of 280$m^2$/g. The nitrogen permeability through the coated Al2O3-SiO2 layer was 42$\times$107mol/$m^2$.s.Pa. It was found that the thermal stability of aluminosilicate membranes, even through similar to that of SiO2 membranes, was much improved in comparison with ${\gamma}$-alumina membranes.

• Journal of the Korean Ceramic Society
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• v.40 no.2
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• pp.153-158
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• 2003

Self-patterning of thin films using photosensitive sol solution has advantages such as simple manufacturing process compared to photoresist/dry etching process. In this study,$La_{0.5}SR_{0.5}CoO_3$(LSCO) thin films as an electrode material for ferroelectric memories have been prepared by spin coating method using photosensitive sol solution. La-2methoxyethoxide, Sr-ethoxide, Co-2methoxyethoxide were used as starting materials. As UV exposure time to the LSCO gel thin film increased, the UV absorption peak intensity of metal${beta}$-diketonate decreased due to reduced solubility by M(metal)-O-M bond formation. Solubility difference by UV irradiation on LSCO gel thin film allows to obtain a fine patterning of thin film. The LSCO thin films annealed over$680{\circ}C$ in air showed perovskite phase and the lowest resistivity$(4{ imes}10^{-3}{Omega}cm)$ of the thin films were obtained by annealing at$740{\circ}C$.