• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 한국전기전자재료학회 2003년도 춘계학술대회 논문집 센서 박막재료 반도체 세라믹
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• pp.116-119
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• 2003

Self-patterning of thin films using photosensitive sol solution has advantages such as simple manufacturing process compared to photoresist/dry etching process. In this study, ferroelectric $Sr_{0.9}Bi_{2.1}Ta_2O_9$(SBT) and $La_{0.5}Sr_{0.5}CoO_3$(LSCO)thin films have been prepared by spin coating method using photosensitive sol solution. $Sr(OC_2H5)_2$, $Bi(TMHD)_3$ and $Ta(OC_2H)_5)_5$ were used as starting materials for SBT solution and $La(OCH_2CH_2OCH_3)_3$, $Sr(OC_2H_5)_2$, $CO(OCH_2CH_2OCH_3)_2$ were used for LSCO solution. Solubility difference by UV irradiation on LSCO thin film allows to obtain a fine patterning due to M-O-M bond formation. The lowest resistivity($4{\times}10^{-3}{\Omega}cm$) of LSCO thin films was obtained by annealing at $740^{\circ}C$.

• 한국신재생에너지학회:학술대회논문집
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• 한국신재생에너지학회 2010년도 춘계학술대회 초록집
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• pp.64.1-64.1
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• 2010

The morphology of mesoporous $TiO_2$ films plays an important role in the operation of a DSSC. For example, the energy conversion efficiency of DSSCs with well-organized mesoporous $TiO_2$ films is much higher than those with traditional films possessing a random morphology. In previous research, well-organized mesoporous $TiO_2$ films have mainly been synthesized using an amphiphilic block copolymer, e.g., a poly(ethylene oxide) (PEO)-based template. A graft copolymer is more attractive than a block copolymer due to its low cost and the ease with which it can be synthesized. In this work, we provide the first report on the successful synthesis of well-organized mesoporous $TiO_2$ films templated by an organized graft copolymer as a structure directing agent. Well-organized mesoporous $TiO_2$ films with excellent channel connectivities were developed via the sol gel processusing an organized PVC-g-POEM graft copolymer synthesized by one-pot ATRP. The careful adjustment of copolymer composition and solvent affinity using a THF/$H_2O$/HCl mixture was used to systematically vary the material structure. The influence of the material structure on solar cell performance was then investigated. A solid-state DSSC employing both the graft copolymer templated organized 700 nm-thick $TiO_2$ films and graft copolymer electrolytes exhibited a solar conversion efficiency of 2.2% at 100 $mW/cm^2$. This value was approximately two-fold higher than that attained from a DSSC employing a random mesoporous $TiO_2$ film. The solar cell performance was maximized at 4.6% when the film thickness was increased to $2.5{\mu}m$. We believe that this graft copolymer-directed approach introduces a new and simple route toward the synthesis of well-organized metal oxide films as an alternative to a conventional block copolymer-based template.

• Journal of the Korea Academia-Industrial cooperation Society
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• 제18권3호
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• pp.1-6
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• 2017

Functional coatings, such as anti-reflection and self-cleaning, are frequently applied to cover glass for photovoltaic applications. Anti-reflection coatings made of mesoporous silica film have been shown to enhance the light transmittance. $TiO_2$ photocatalyst films are often applied as a self-cleaning coating. In this study, transparent hydrophobic anti-reflective and self-cleaning coatings made of $SiO_2/TiO_2$ thin layers were fabricated on a slide glass substrate by the sol-gel and dip-coating processes. The morphology of the functional coatings was characterized by field emission scanning electron microscopy (FE-SEM) and atomic force microscopy (AFM). The optical properties of the functional coatings were investigated using an UV-visible spectrophotometer. Contact angle measurements were performed to confirm the hydrophobicity of the surface. The results showed that the $TiO_2$ films exhibit a high transmittance comparable to that of the bare slide glass substrate. The $TiO_2$ nanoparticles make the film more reflective and lead to a lower transmittance. However, the transmittance of the $SiO_2/TiO_2$ thin layers is 93.5% at 550 nm with a contact angle of $110^{\circ}$, which is higher than that of the bare slide glass (2.0%).

• Journal of the Korean Institute of Telematics and Electronics D
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• 제36D권11호
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• pp.63-70
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• 1999

A PLT(10) thin film has been deposited on $Pt/TiO_2/SiO_2/Si$ substrate by sol-gel method, and its switching characteristics have been investigated with various top electrode areas, input pulse voltages and loan resistances. As the external input pulse voltage increases from 2V to 5V, the switching time decreases from $0.49{\mu}s$ to $0.12{\mu}s$. The activation energy ($E_a$) obtained from the relations between the switching time and the applied pulse voltage is evaluated as 209kV/cm. The switched charge densities at 5V obtained from the hysteresis loop and the polarization switching are $11.69{\mu}C/cm^2$ and $13.02{\mu}C/cm^2$, respectively, which agree relatively well with each other and show the difference of 10%. When the top electrode area increases from TEX>$3.14{\times}10^{-4}cm^2$ to $5.03{\times}10^{-3}cm^2$ and the load resistance increases from 50${\Omega}$ to 3.3$k{\Omega}$, the switching time increases from $0.12{\mu}s$ to $1.88{\mu}s$ and from $0.12{\mu}s$ to $9.7{\mu}s$, respectively. These switching characteristics indicate that PLT(10) thin film can be well applied in nonvolatile memory devices.

• Journal of the Korean Electrochemical Society
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• 제5권2호
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• pp.52-56
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• 2002

Tin oxide was coated on graphite particle by sol-gel method and an electrode with this material having microcrystalline structure for lithium ion battery was obtained by heat treatment in the range $400-600^{\circ}C$. The content of tin oxide was controlled within the range of $2.25wt\%\~11.1wt\%$. The discharge capacity increased with the content of tin oxide and also initial irreversible capacity increased. The discharge capacity of tin oxide electrode showed more than 350 mAh/g at the initial cycle and 300 mAh/g after the 30th cycle in propylene carbonate(PC) based electrolyte whereas graphite electrode without surface modification showed 140 mAh/g. When the charge and discharge rate was changed from C/5 to C/2, The discharge capacity of tin oxide and graphite electrode showed $92\%\;and\;77\%$ of initial capacity, respectively. It has been considered that such an enhancement of electrode characteristics was caused because lithium $oxide(Li_2O)$ passive film formed from the reaction between tin oxide and lithium ion prevented the exfoliation of graphite electrode and also reduced tin enhanced the electrical conduction between graphite particles to improve the current distribution of electrode.

• Membrane Journal
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• 제26권5호
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• pp.391-400
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• 2016

In this work, novel thin film composite (TFC) forward osmosis (FO) membranes are developed via interfacial polymerization on the polysulfone (PS) substrate, using TEOS as the a sol-gel reagent to form hydrophilic interlayer polymer between PS and polyamide (PA). The PS substrate was cast on a very thin polyester nonwoven to reduce membrane resistance. With the incorporation of TEOS (tetraethoxy silane) polymer in the interface between PS and PA, the formed TFC FO membrane exhibits better hydrophilicity and improved water flux, and therefore superior membrane performance. By changing the polymerization sequence of PA interfacial polymerization and TEOS sol-gel condensation, the surface properties and performance of FO membranes are changed significantly. The permeability of FO membranes were estimated using the bench-scale FO test equipment. The distribution of the polysiloxane on composite membrane and morphology are also studied with FE-SEM and EDAX. The PS_PA_TEOS membrane showed highly enhanced water flux (79.2 LMH) but reverse salt flux (RSF) value (7.10 GMH) also increased. However, the flux of PS_TEOS_PA membrane increased moderately (54.1 LMH) without increasing RSF value (1.60 GMH) compare with PS_PA membrane.

• Korean Journal of Materials Research
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• 제12권3호
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• pp.211-214
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• 2002

Properties of 52/48 PZT films with various thicknesses for piezoelectric micro-electro mechanical systems (MEMS) devices fabricated by multi-coating method on $Pt(3500{\AA})/Ti(400{\AA})/SiO_2(3000{\AA})/Si$(525$\mu\textrm{m}$) substrates were investigated. PZT films were deposited by spin-coating process at 3500 rpm for 30 sec, followed by pyrolysis at 45$0^{\circ}C$ for 10 min producing the thickness of about 120nm. These processes were repeated 4, 8, 12, 16 and 20 times in order to have various thicknesses, respectively. Finally, they were crystallized at $650^{\circ}C$ for 30 min. All thick PZT films showed dense and homogeneous surface microstructures. Thick PZT films showed crystalline structures of random orientations with increasing thickness. Dielectric constants of thick PZT films were increased with increasing film thickness and reached 800 at 100kHz for 2.3$\mu\textrm{m}$ thick PZT film. $P_r\; and\; E_c$ of 2.3$\mu\textrm{m}$ thick PZT films were about 20$\mu$C/$\textrm{cm}^2$ and 63kV/cm. Depth profile analysis by Auger Electron Spectroscopy (AES) of 4800 $\AA$ thick PZT film showed the formation of the perovskite phase on Pt layer by Pb diffusion behavior. It was considered that Pb-Pt intermediate layer promoted PZT (111) columnar structures.

• Applied Chemistry for Engineering
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• 제7권6호
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• pp.1078-1086
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• 1996

The peroxo-polytungstic acid was formed by the direct reaction of tungsten powder with the hydrogen peroxide solution. Peroxo-polytungstic powder were prepared by rotary evaporator using the fabricated on to ITO coated glass as substrate by dip-coating method using $2g/10mL(W-IPA/H_2O)$ sol solution. A substrate was dipped into the sol solution and after a meniscus had settled, the substrate was withdrawn at a constant rate of the 3mm/sec. Thicker layer could be built up by repeated dipping/post-treatment 15 times cycles. The layers dried at the temperature of $65{\sim}70^{\circ}C$ during the withdrawn process, and then tungsten oxides thin film was formed by final heating treatment at the temperature of $230{\sim}240^{\circ}C$ for 30min. A linear rotation between the thickness of thin film and the number of dipping/post-treatment cycles for tungsten oxides thin films made by dip-coating was found. The thickness of thin film had $60{\AA}$ after one dipping. From the patterns of XRD, the structure of tungsten oxides thin film identified as amorphous one and from the photographs of SEM, the defects and the moderate cracks were observed on the tungsten oxides thin film, but the homogeneous surface of thin films were mostly appeared. The electrochemical characteristic of the $ITO/WO_3$ thin film electrode were confirmed by the cyclic voltammetry and the cathodic Tafel polaization method. The coloring bleaching processes were clearly repeated up to several hundreds cycles by multiple cyclic voltammetry, but the dissolved phenomenon of thin film revealed in $H_2SO_4$ solution was observed due to the decrease of the current densities. The diffusion coefficient was calculated from irreversible Randles-Sevick equation from the data obtained by the cyclic voltammetry with various scan rates.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 한국전기전자재료학회 2002년도 춘계학술대회 논문집 유기절연재료 전자세라믹 방전플라즈마 일렉트렛트 및 응용기술
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• pp.47-52
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• 2002

A processing method is developed for preparing sol-gel derived $Pb(Zr_{1-x}Ti_x)O_3$ (x=0.5) thin films on Pt-Ir($Pt_{80}Ir_{20}$)-alloy substrates. The as-deposited layer was dried on a plate in air at $70^{\circ}C$. And then it was baked at $1500^{\circ}C$, annealed at $450^{\circ}C$ and finally annealed for crystallization at various temperatures ranging from $580^{\circ}C$ to $700^{\circ}C$ for 1hour in a tube furnace. The thickness of the annealed film with three layers was $0.3{\mu}m$. Crystalline properties and surface morphology were examined using X-ray diffractometer (XRD). Electrical properties of the films such as dielectric constant, C-V, leakage current density were measured under different annealing temperature. The PZT thin film which was crystallized at $600^{\circ}C$ for 60minutes showed the best structural and electrical dielectric constant is 577. C-V measurement show that $700^{\circ}C$ sample has window memory volt of 2.5V and good capacitance for bias volts. Leakage current density of every sample show $10^{-8}A/cm^2$ r below and breakdown voltage(Vb) is that 25volts.

• Proceedings of the Materials Research Society of Korea Conference
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• 한국재료학회 2012년도 춘계학술발표대회
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• pp.99.1-99.1
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• 2012

The thin-film photovoltaic absorbers (CdTe and $Cu(In,Ga)Se_2$) can achieve solar conversion efficiencies of up to 20% and are now commercially available, but the presence of toxic (Cd,Se) and expensive elemental components (In, Te) is a real issue as the demand for photovoltaics rapidly increases. To overcome these limitations, there has been substantial interest in developing viable alternative materials, such as $Cu_2ZnSnS_4$ (CZTS) is an emerging solar absorber that is structurally similar to CIGS, but contains only earth abundant, non-toxic elements and has a near optimal direct band gap energy of 1.4 - 1.6 eV and a large absorption coefficient of ~104 $cm^{-1}$. The CZTS absorber layers are grown and investigated by various fabrication methods, such as thermal evaporation, e-beam evaporation with a post sulfurization, sputtering, non-vacuum sol-gel, pulsed laser, spray-pyrolysis method and electrodeposition technique. In the present work, we report an alternative aqueous chemical approach based on chemical bath deposition (CBD) method for large area deposition of CZTS thin films. Samples produced by our method were analyzed by scanning electron microscopy, X-ray diffraction, transmission electron microscopy, absorbance and photoluminescence. The results show that this inexpensive and relatively benign process produces thin films of CZTS exhibiting uniform composition, kesterite crystal structure, and some factors like triethanolamine, ammonia, temperature which strongly affect on the morphology of CZTS film.