• Journal of the Korean Institute of Electrical and Electronic Material Engineers
• /
• v.11 no.7
• /
• pp.535-540
• /
• 1998

Thin films of PLZT were prepared on indium tin oxide(ITO) coated glass substrates by sol-gel process and annealed by rapid thermal annealing(RTA) at $750^{\circ}C$ for 5 minutes. The crystal structure of PLZT thin films were investigated for a different Zr mol% content. XRD results showed that the crystallographic structure was transitted from tetragonal to rhombohedral structure as Zr mol% increased. Raman spectroscopy results showed that the bands of spectra became broader as the amount of Zr mol% increased and two crystal phase coexisted at 2/55/45 PLZT film. Raman spectroscopy was useful for crystal structure analysis of PLZT thin films.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
• /
• 2005.07a
• /
• pp.401-402
• /
• 2005

The important parts of material science in the film preparation fields and sol-gel technology are presented. For the present work, a series of amorphous films was prepared in air by sol-gel method without using some alkoxide stabilizer, which reduces the reactivity of the metal alkoxides. The choice of precursors can affect the chemical-reaction kinetics, microstructures and properties of the product. In this report author compared the crystallization behavior of oxide functional films derived from the same precursors, stressing the influence of experiment conditions and where it was possible to obtain the uniform amorphous or crystalline dielectric films. A short analysis of sol-gel technology and thin film methods about development of dielectric materials has been given.

• Journal of the Speleological Society of Korea
• /
• no.76
• /
• pp.49-55
• /
• 2006

The submicron $YBa_2Cu_3O_x$ powder was prepared by the sol-gel method. The particle size is distributed from 0.2 to 1.0 ${\mu}m$, which benefits to eliminate the micro-cracks formed in the $YBa_2Cu_3O_x$ films deposited by electrophoresis. The powder was single phase of $YBa_2Cu_3O_x$ examined by X-ray diffraction. In the sol-gel process the citrate gel was formed from citric acid and nitrate solution of $Y_2O_3$, $Ba(NO_3)_2$ and CuO. When pH values were adjusted to 6.4-6.7, $Ba(NO_3)_2$ could be dissolved in the citrate solution completely. Appropriate evaporative temperature of the sol-gel formation is discussed. Acetone is used as electrophoreticsolution, in which some water and iodine (0.2 g/1) and polyethylene glycol (2 vol. %) are added. The concentrations of $YBa_2Cu_3O_x$ powders is 20g/l. The thickness of deposited film could be more than 50 ${\mu}m$ in 3 minutes of depositing time. The most EPD films could be 90K zero resistance and the Jc values were over 1000A/cm2 (0 H, 77 K).

• Journal of the Korean Ceramic Society
• /
• v.33 no.6
• /
• pp.665-671
• /
• 1996

Ferroelectric Pb(Fe1/2Nb1/2)O3 thin films were successfully fabricated on ITO/Glass substrate by sol-gel proces-sing and characterized to determine the dielectric and electric properties. Viscosity of PEN sol measured to investigate rheological properties was 3.25 cP which was proper for coating. The sol also showed Newtonian behavior. RTA(Rapid Thermal Annealing) was used for the annealing of the thin film and 1200~1700$\AA$ thick PEN thin films were fabricated by repeating the intermediate and the final annealing. After the deposition of Pt as top electrode by vacuum evaporation dielectric and electric properties were measured. Dielectric properties of FFN thin film were enhanced by increasing the perovskite phase fraction with increasing the annealing temperature. Measured dielectric constant of 1700$\AA$ PFN thin film annealed at $650^{\circ}C$ was 890 at 1kHz Capacitatnce density and dielectric loss were 47 fF/${\mu}{\textrm}{m}$2 and 0.47 respectively. As a result of measuring Curie temperature PFN thin films had Curie point with a rang of 110~12$0^{\circ}C$ and showed broad dielectric peak at that point. Leakage current of the PFN thin films were increased with increasing the annealing tempera-ture.

• Proceedings of the Korean Ceranic Society Conference
• /
• 2000.10a
• /
• pp.45.2-45
• /
• 2000

• Proceedings of the Korean Ceranic Society Conference
• /
• 2000.10a
• /
• pp.177.2-177
• /
• 2000

• Proceedings of the Materials Research Society of Korea Conference
• /
• 1996.11a
• /
• pp.62-62
• /
• 1996

• Proceedings of the Korean Institute of Surface Engineering Conference
• /
• 1998.05a
• /
• pp.136-137
• /
• 1998

• Proceedings of the Materials Research Society of Korea Conference
• /
• 1998.11a
• /
• pp.71-71
• /
• 1998

• Journal of the Korean Ceramic Society
• /
• v.34 no.1
• /
• pp.37-44
• /
• 1997

Barium ferrite thin films on the thermal oxidized Si substrate were prepared by using sol-gel method (dip coating) from the sol of composition ratio of 5.25, designated by mole ratio 2Fe/Ba. The gelation process was largely divided into 4 step, and the sol prepared by reaction for 90 minutes at 8$0^{\circ}C$ was the suit-able for coating. Needle shaped particles formed on the coating layer were placed parallel to substrate and the inclination was increased with film thickness. The easy-direction of magnetization of needle shaped par-ticles was long-axis direction.