• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2003.11a
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• pp.51-54
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• 2003

Tb-doped lead zirconate titanate($Pb_{1.1}(Zr_{0.6}Ti_{0.4})O_3$; PZT) thin films on $Pt(111)/Ti/SiO_2/Si(100)$ substrates prepared by a sol-gel method. Films have a Zr/Ti ratio of 60:40 and perovskite phase structure. The effect on the structural and electrical properties of films measured according to Tb content. Dielectric and ferroelectric properties of PZT thin films were altered significantly by Tb-doping. The PZT thin film with higher dielectric constant and improved leakage current characteristic was obtained by adding 0.3 mol% Tb. At 100 kHz, the dielectric constant and the dielectric loss of the 0.3 mol% Tb-doped PZT thin film were 1611 and 0.24, respectively The remanent polarization(2Pr) of the 0.3 mol% Tb-doped PZT thin film was $61.4\;{\mu}C/cm^2$ and the coercive field was 61.9 kV/cm. Tb-doped PZT thin films showed improved fatigue characteristics comparing to the undoped PZT thin film.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.20 no.6
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• pp.262-266
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• 2010

The Calcium-aluminate electride thin films on the quartz substrates was coated by sol-gel process. The crystallization of the C12A7 thin film was observed at $800^{\circ}C$ and high density C12A7 thin film was achieved on heat treatment at $1,200^{\circ}C$ for 1 hour. The reduction heat treatment of C12A7 thin film could be converted from insulator to conductor and the electrical conductivity was 120 S/cm in the C12A7 thin film heat treated at $1,200^{\circ}C$ with $H_2$ gas for 48 hours.

• Journal of the Korean Ceramic Society
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• v.53 no.3
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• pp.338-342
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• 2016

ZnO thin film co-doped with F and Al was prepared on a glass substrate via simple non-alkoxide sol-gel spin coating. For a fixed F concentration, the addition of Al co-dopant was shown to reduce the resistivity mainly due to an increase in electrical carrier density compared with ZnO doped with F only, especially after the second post-heat-treatment in a reducing environment. There was no effective positive contribution to the reduction in resistivity due to the mobility enhancement by the addition of Al co-dopant. Optical transmittance of the ZnO thin film co-doped with F and Al in the visible light domain was shown to be higher than that of the ZnO thin film doped with F only.

• Journal of the Korean Ceramic Society
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• v.33 no.6
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• pp.623-630
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• 1996

A Sol-gel derived ferroelectric PbTiO3 thin film was synthesized by using diethanolamine (DEA) as a comple-xing agent. Surface chemical analyses were examined in order to study the effect of heating temperature on the composition of thin film by EPMA and XPS. A rapid volatilization of lead was observed in the films fired at $700^{\circ}C$ or higher and the ratio of Pb:Ti was found to be 34:66. A depth profile by Ar+ showed that the Ar sputtering decreased Pb amount of inner part of the film resulting in Ti-rich phase near the surface of the film.

• Proceedings of the Korean Powder Metallurgy Institute Conference
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• 2006.09a
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• pp.676-677
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• 2006

Synthesis of zinc oxide nanorods, sheets and flower like structure were done by the sol-gel method using zinc acetate dihydrate and sodium hydroxide at $80^{\circ}C$ with 12 hours refluxing time nanorods, in case of as synthesized powder, with diameter of 20-60nm. Annealing at higher temperature (300 and $500^{\circ}C$,) in air ambient changes the morphology to sheet and flower like structure. The standard peak of zinc oxide was observed in IR at $523cm^{-1}$. The UV-VIS spectroscopy of zinc oxide shows a characteristic peak at 375nm.

• Journal of the Korean Ceramic Society
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• v.31 no.7
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• pp.804-812
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• 1994

Stable PZT coating sol was prepared using chelating agent, ethylacetoacetate(EAcAc) by sol-gel processing under ambient atmosphere. Through FT-IR spectrum analysis on solution of each reaction step, formation of metal complex was confirmed and prepared PZT sol was stable over several months. Through TG-DTA, XRD, FT-IR spetrum analysis of PZT gel powder, it was understood that the addition of EAcAc could reduce the transition temperature to ferroelectric phase, due to the increased homogeneity by matching the hydrolysis and condensation rates by chelation. Single perovskite phase was obtained by the heat-treatment at 54$0^{\circ}C$ for 30 min. The film was coated on ITO-coated glass substrate by dip coating method. After heat-treatment, PZT thin film had thickness in the range of 20~130 nm. The maximum dielectric constant of its thin film at room temperature and 1 kHz was 128.

• Solar Energy
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• v.12 no.2
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• pp.18-27
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• 1992

Multilayer coatings of $WO_3$ were deposited by the sol-gel technique on microscope slide glass and ITO coated glass. These films were characterized optically, chemically, and structurally by XRD, spectro-photometry, DTA/TGA, SEM/EDAX and RBS. Uniform $WO_3$ sol-gel films were dip coated on slide glass at dipping speed of 5mm/s. This sample indicated a low near IR transmittance in optical properties as a result of coloration using a dilute HCI electrolyte as the $H^+$ion sources. Differential thermal analysis results have allowed the accurate determination of the formation temperature of the $WO_3$ crystalline phase from the gel data in the range of $380^{\circ}C{\sim}500^{\circ}C$, consistent with crystallization temperature of sol-gel film. RBS spectrometry was performed on the uncolored $WO_3$ sol-gel film, yielding a chemical composition of $WO_3$.

• Current Photovoltaic Research
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• v.2 no.3
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• pp.110-114
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• 2014

We propose a low temperature sol-gel ZnO/Ag nanowire composite thin film to fulfill low temperature and low cost requirements, which are essential criteria in future flexible electronic devices. In this proposed thin film, Ag nanowire plays the role of electrical conduction, and sol-gel ZnO provides a structural medium with a high visible transmittance. Low temperature restriction in the sol-gel fabrication process prevents sufficient oxidation of Zn acetate precursors, which were solved by a post-coating treatment with ultraviolet light irradiation. Composite thin film formation was performed by spin coating methods with a mixed precursor solution or in a sequential manner. We obtained an average visible transmittance larger than 85% and a sheet resistance smaller than $50{\Omega}/sq$. After optimization in a fabricated composite transparent conductive thin film with the thickness around 100 nm. Similar experimental demonstration in a flexible substrate (polyethyleneterephthalate) was successful, which implies a promising application opportunity of this technology.

• Proceedings of the KSME Conference
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• 2008.11a
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• pp.1733-1736
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• 2008

ZnO thin films with preferred orientation along the (0 0 2) plane were fabricated by a sol-gel method. The effects of the annealing temperature, time, and thickness were studied by investigating UV-visible spectra, FT-IR spectra, and XRD of ZnO films. The films were dried and annealed ed at $100^{\circ}C,\;200^{\circ}C$, and $300^{\circ}C$ for 1hr, 2hrs, and 3hrs, respectively. The film showed the preferred (0 0 2) orientation and high transmittance near 90% in the visible range. Also, SEM images of the films exhibited very smooth surfaces without holes and cracks. Schottky diodes were fabricated by using ZnO sol-gel material. Au and Al were used as electrodes to make Ohmic and Schottky contacts, respectively. The annealing temperature, time and the thickness dependent I-V characteristics were presented in this article.

• 한국정보디스플레이학회:학술대회논문집
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• 2009.10a
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• pp.396-399
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• 2009

Thin-film transistors (TFTs) with an aluminum indium oxide (AIO) channel layer were fabricated via a simple and low-cost sol-gel process. Effects of annealing temperature and time were investigated for better TFT performance. The sol-gel AIO TFTs were annealed as low as $350^{\circ}C$. They exhibit n-type semiconductor behavior, a mobility higher than 19 $cm^2/V{\cdot}s$ and an onto-off current ratio greater than $10^8$.