• 한국재료학회지
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• 제24권5호
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• pp.259-265
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• 2014

$ZrO_2$ films were coated on aluminum etching foil by the sol-gel method to apply $ZrO_2$ as a dielectric material in an aluminum(Al) electrolytic capacitor. $ZrO_2$ films annealed above $450^{\circ}C$ appeared to have a tetragonal structure. The withdrawal speed during dip-coating, and the annealing temperature, influenced crack-growth in the films. The $ZrO_2$ films annealed at $500^{\circ}C$ exhibited a dielectric constant of 33 at 1 kHz. Also, uniform $ZrO_2$ tunnels formed in Al etch-pits $1{\mu}m$ in diameter. However, $ZrO_2$ film of 100-200 nm thickness showed the withstanding voltage of 15 V, which was unsuitable for a high-voltage capacitor. In order to improve the withstanding voltage, $ZrO_2$-coated Al etching foils were anodized at 300 V. After being anodized, the $Al_2O_3$ film grew in the directions of both the Al-metal matrix and the $ZrO_2$ film, and the $ZrO_2$-coated Al foil showed a withstanding voltage of 300 V. However, the capacitance of the $ZrO_2$-coated Al foil exhibited only a small increase because the thickness of the $Al_2O_3$ film was 4-5 times thicker than that of $ZrO_2$ film.

• 한국세라믹학회:학술대회논문집
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• 한국세라믹학회 2004년도 춘계총회 및 연구발표회 초록집
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• pp.38.1-38.1
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• 2004

• 한국세라믹학회:학술대회논문집
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• 한국세라믹학회 2003년도 추계총회 및 연구발표회 초록집
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• pp.216.2-216
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• 2003

• 한국세라믹학회지
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• 제33권7호
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• pp.839-847
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• 1996

• 한국광학회:학술대회논문집
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• 한국광학회 2002년도 제13회 정기총회 및 2002년도 동계학술발표회
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• pp.212-213
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• 2002

• 한국세라믹학회지
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• 제40권5호
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• pp.475-480
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• 2003

금 미립자를 ZrO$_2$중에 분산시켜 비선형광학재료, 선택흡수막 및 투과막 등 새로운 기능성 재료로 활용하기 위하여 Au/ZrO$_2$나노복합체 박막을 제조하였다. 딥-코팅법에 의해 제조한 박막을 열처리한 후 그 특성을 엑스선 회절분석,분광분석, 주사탐침현미경 및 전자현미경 등을 이용하여 조사하였다. Au/ZrO$_2$ 박막은 150 nm의 두께를 보였으며, 박막의 표면에 분산된 금 미립자의 크기는 15~35 nm였으며, 표면거칠기는 약 1.06 nm로 막질이 우수하였다. 그리고 가시광선 영역인 600~650 nm의 파장범위에서 금 미립자의 플라즈마 공명에 의한 흡수 피_크를 나타내어 비선형광학성을 확인할 수 있었다.

• 한국표면공학회:학술대회논문집
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• 한국표면공학회 2012년도 추계총회 및 학술대회 논문집
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• pp.131-133
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• 2012

The photoluminescence (PT) properties of Al-doped ZnO thin films grown by the sol-gel dip-coating method have been investigated. At 12 K, nine distinct PL peaks were observed at 2.037, 2.592, 2.832, 3.027, 3.177, 3.216, 3.260, 3.303, and 3.354 eV. The deep-level emissions (2.037, 2.592, 2.832, and 3.027 eV) were attributed to native defects. The near-band-edge (NBE) emission peaks at 3.354, 3.303, 3.260, 3.216, and 3.177 eV were attributed to the emission of the neutral-donor-bound excitons (D0X), two-electron satellite (TES), free-to-neutral-acceptors (e,A0), donor-acceptor pairs (DAP), and second-order longitudinal optical (2LO) phonon replicas of the TES (TES-2LO), respectively. According to Haynes' empirical rule, we calculated the energy of a free exciton (FX) to be 3.374 eV. The thermal activation energy for D0X in the nanocrystalline ZnO thin film was found to be ~25 meV, corresponding to the thermal dissociation energy required for D0X transitions.

• Korean Chemical Engineering Research
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• 제54권6호
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• pp.767-774
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• 2016

졸-겔법에 의해 출발물질로 aluminum isopropoxide를 사용하여, 메탄올용매 내에서 가수분해 시킨 후 해교제인 초산, 질산 또는 염산을 각각 첨가하여 해교 시켜 3종류의 alumina sol을 제조하였다. 또한 이 sol에 실란커플링제인(3-glycidyloxypropyl) trimethoxysilane을 첨가하여 코팅 용액을 제조한 후, 이용액을 polycarbonate 기재 위에 담금 코팅 후 열 경화시켜 코팅 도막을 형성하였다. 이 과정 중 해교제의 종류 변화가 코팅 도막의 물성에 미치는 영향을 연구하였다. 그 결과 해교제로서 강산인 염산이나 질산을 사용한 코팅 도막은 H나 2H의 연필경도와 5B의 부착력을 나타내어 우수한 물성을 나타내었다. 반면에 해교제로서 약산인 초산을 사용한 경우에는 HB의 연필경도와 3B의 부착력을 보여 좋지 못한 물성을 나타내었다.

• 한국세라믹학회지
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• 제29권12호
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• pp.970-980
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• 1992

${\gamma}-alumina$ membranes were prepared by sol-gel dip coating or pressurized coating of boehmite sols on slipcasted ${\gamma}-alumina$ support tubes. The particle size of sols synthesized via the modified Yoldas-method could be controlled below 5 mn according to the mole ratio of nitric acid/aluminumtri-sec-butoxide (0.07~1.0). The reproducible crack-free composite membranes were produced by the 2nd dip coating or the pressurized coating technique using very stable sols with the particle size of 45 nm. Nitrogen gas permeability through the top-layer in the composite membrane was about $70~55{\times}10^{-7}\;mol/m^2{\cdot}s{\cdot}Pa$. The thermal stability of the top layer was proved to be good enough upto the heat-treatment temperature of $500^{\circ}C$.

• 한국표면공학회지
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• 제32권3호
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• pp.456-460
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• 1999

Transparent conducting tin (IV) oxide thin films have been studies and developed for the electrode materials of solar cell substrate. Fabrication of tin oxide thin films by sol-gel method is process development of lower cost photovoltaic solar cell system. The research is focused on the establishment of process condition and development of precursor. The precursor solution was made of tin isopropoxide dissolved in isopropyl alcohol. The hydrolysis rate was controlled by addition of triethanolamine. Dip and spin coating technique were applied to coat tin oxide on borosilicate glass. The resistivity of the thin film was lower than 0.1Ω-cm and the transmittance is higher than 90% in a visible range.