• Journal of the Korean Ceramic Society
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• v.50 no.4
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• pp.269-274
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• 2013

ACF and ZnO modified $TiO_2$ composite materials (ZnO-ACF/$TiO_2$) were prepared by a sol-gel method. The composites were characterized by X-ray diffraction (XRD), energy dispersive X-ray (EDX) analysis and scanning electron microscope (SEM) analysis. A methyl orange (MO) solution under visible light irradiation was used to determine the photocatalytic activity. The degradation of the MO was determined using UV spectrophotometers. An increase in the photocatalytic activity was observed and attributed to an increase of the photo-absorption effect by the ZnO and the cooperative effect of the ACF.

• Journal of the Korean Chemical Society
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• v.9 no.1
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• pp.16-22
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• 1965

The time-lag-effect of alkali salts on the gelation of sodium alginate-$CaSO_4{\cdot}$1/2 $H_2O$ is compared with Miyake's data, and then the formation rate of the elastics measured by the continuous method (an improved Schwedoff's method) and the change of rigidity with metallic oxides are studied as follows: (1) The gelation processes of sodium alginate and $CaSO_4{\cdot}$1/2 $H_2O$-aqueous sol are studied by measuring, continuously the increases of tensions ofsamples. (2) The time-lag-effect of $Na_3PO_4$ on the formation rate of the elastic gel is larger than that of $Na_2CO_3$, but the difference between the effects of the two alkali salts on the rate is found not so greater than predicted in Miyake's data. (3) Any regularities of the effect on the rate by metallic oxides are not observed. The increasing effects of the rates of $SiO_2$ and MgO are relatively large, and that of ZnO is relatively small. However, $Al_2O_3$, $Sb_2O_3$ and $TiO_2$show some decreasing effects. As a result it is noted that the regularities do not depend on the effect of oxide species and their amounts. (4) It is not found proportionality between the rigidity and the gelation rate. However, the increasing effect of the rigidity with the addition of metallic oxides can be observed. The rigidity increasing rate of MgO is the largest of them.

• Proceedings of the Materials Research Society of Korea Conference
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• 2011.05a
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• pp.62.1-62.1
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• 2011

현재 상용화된 LED 또는 태양전지 등의 투명전극(TCO, transparent couducting oxide)재료로 높은 전기전도도와 광투과도를 갖는 ITO (Indium Tin Oxide)가 많이 채택되고 있다. 그러나 이에 사용되는 Indium의 단가가 높다는 문제점이 있어 이를 대체하기 위한 물질의 연구가 많이 이루어지고 있다. 특히 Aluminum을 doping한 ZnO (AZO)는 우수한 전기적, 광학적 특성 등으로 인해 ITO를 대체할 차세대 TCO 물질로 각광받고 있다. 본 연구에서는 sol-gel법을 및 direct patterning법을 이용하여 moth-eye 패턴을 포함하는 AZO 박막을 제작하였다. AZO sol을 제작하기 위하여 2-methoxyethanol, zinc acetate dihydrate 및 doping source로 aluminum nitrate nonahydrate를 사용하였다. 또한 광추출 향상 효과를 갖는 moth-eye 구조의 master stamp를 Polydimethyl siloxane(PDMS)를 이용하여 역상 moth-eye 구조의 mold를 복제하였으며, 이 복제된 mold와 제작된 AZO sol을 이용한 direct patterning법을 통해 나노급 moth-eye 구조를 갖는 AZO 투명전극층을 형성하였다. 제작된 moth-eye 구조를 갖는 AZO 투명전극층의 전기적 특성 평가를 위해, 4-point probe 측정 및 Hall measurement를 시행하였으며, 광학적 특성을 확인하기 위하여 UV-Visable spectrometer를 이용하여 투과도를 측정하였다. 본 연구를 통해 현재 상용화된 광전자 소자에 사용되고 있는 ITO 투명전극을 대체할 차세대 투명전극으로써 AZO 박막의 가능성을 확인하였다.

• Proceedings of the Korean Society of Dyers and Finishers Conference
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• 2012.03a
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• pp.58-58
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• 2012

산소와 아연의 화합물인 산화아연은 UVA, UVB 산란효과가 있는 논케미컬 자외선 차단 성분으로 물, 알코올에는 녹지 않지만 산, 알칼리, 암모니아수 등에는 녹는다. 자외선을 방지하며 입자경은 500nm전후이다. 굴절률은1.9~2.0으로 내광성, 내건성, 내열성이 커서 햇빛이나 다른 자극으로 보호막을 형성하며 수렴, 방부, 항균작용을 한다. 이러한 특징을 띄는 금속산화물 산화아연을 내광성이 약한 p-aramid섬유에 코팅해 내광성 증진을 나타내려한다. 이에 따라 본 실험에서는 암모니아수와 Zinc acetate로부터 sol-gel 합성법에 따른 ZnO 합성 실험을 수행하였다. 반응물 농도에 따른 ZnO 입자의 형상과 입자 분포를 통해 결정크기를 알아보았다. 결과 분석을 위하여 X-ray 회절분석(XRD)를 이용해 ZnO입자의 결정성을 분석하였고, 패턴의 형상과 결정크기를 전계방출형 투과전자현미경(FE-TEM)을 통해 관찰하였다.

• The Korean Journal of Ceramics
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• v.3 no.4
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• pp.249-252
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• 1997

Highly oriented ZnO thin films were fabricated by dip-coating technique using zinc acetate 2-methoxyethanol 2-aminoethanol solution as starting materials, and effects of substrates on the film's orientation were investigated. Product films were obtained by prefiring at 300, 400, 500 and 550℃ for 10 min, followed by final heat-treatment at the same temperatures as prefiring for 1h. c-axis oriented films on glass substrates were prepared by heat treatment of prefiring films at 300-550℃, while films on alumina showed polycrystalline structure. Films with c-axis orientation exhibited lower specific resistivities than those of polycrystalline films with partial crack and pore.

• 한국정보디스플레이학회:학술대회논문집
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• 2009.10a
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• pp.524-526
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• 2009

The effects of In and Ga contents on characteristics of InGaZnO (IGZO) films grown by a sol-gel method and their thin film transistors (TFTs) have been investigated. Excess In incorporation into IGZO enhances the field effect mobilities of the TFTs due to the increase in conducting path ways, and decreases the grain size and the surface roughness of the films because more $InO_2^-$ ions induce cubic stacking faults with IGZO. Ga incorporation into results in decrease in carrier concentration of films and off-current of TFTs since Ga ion forms stronger chemical bonds with oxygen than Zn and In ions, acting as a carrier killer.

• Journal of the Korean Ceramic Society
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• v.50 no.6
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• pp.504-509
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• 2013

In this study, ZnSe-$TiO_2$ composites were synthesized by a facile hydrothermal-assisted sol-gel process and characterized by nitrogen adsorption isotherms (77 K), X-ray diffraction (XRD), scanning electron microscopy (SEM) with energy dispersive X-ray (EDX) analysis, transmission electron microscopy (TEM) and UV-vis diffuse reflectance spectrophotometry. The photocatalytic activity was investigated by decoloration methylene blue (MB), methyl orange (MO), and rhodamine B (Rh.B) in an aqueous solution under visible light irradiation. The results revealed that the photocatalytic activity of the ZnSe-$TiO_2$ photocatalyst was much higher than that of pure$TiO_2$. The ZnSe nanoparticles, which act as a photosensitizer, not only extend the spectral response of $TiO_2$ to the visible region but also reduce charge recombinations.

• Journal of the Korean Chemical Society
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• v.57 no.3
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• pp.382-388
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• 2013

The present paper focuses on the synthesis, characterization and application of nanophotocatalyst for degradation of quinalphos and monocrotophos. Novel heterostructured ZnO/$TiO_2$ photocatalyst ($Z_9T$) was prepared and characterized with X-ray diffraction (XRD), SEM and UV-vis diffuses reflectance spectroscopy. The average crystalline size of synthesized $Z_9T$ was found to be 21.48 nm. The pesticides were degraded in the presence of nanophotocatalysts i.e., $TiO_2$, ZnO, $TiO_2$/ZnO mixed in various proportions and heterostructured nanophotocatalyst synthesized by Sol-Gel method. The batch experiments were performed by adding photocatalyst to 100 ml of pesticide solution and suspension was subjected to irradiation under UV light. In case of mixed catalyst, the maximum degradation of monocrotophos and quinalphos has been observed when ZnO and $TiO_2$ were in the ratio of 7:3 and 8:2 respectively. The degradation efficiency with synthesized heterostructured nanophotocatalyst ($Z_9T$) was found to be comparable with $TiO_2$.

• Proceedings of the Korean Vacuum Society Conference
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• 2012.08a
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• pp.242-242
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• 2012

Transparent oxide semiconductors are increasingly becoming one of good candidates for high efficient channel materials of thin film transistors (TFTs) in large-area display industries. Compare to the conventional hydrogenated amorphous silicon channel layers, solution processed ZnO-TFTs can be simply fabricated at low temperature by just using a spin coating method without vacuum deposition, thus providing low manufacturing cost. Furthermore, solution based oxide TFT exhibits excellent transparency and enables to apply flexible devices. For this reason, this process has been attracting much attention as one fabrication method for oxide channel layer in thin-film transistors (TFTs). But, poor electrical characteristic of these solution based oxide materials still remains one of issuable problems due to oxygen vacancy formed by breaking weak chemical bonds during fabrication. These electrical properties are expected due to the generation of a large number of conducting carriers, resulting in huge electron scattering effect. Therefore, we study a novel technique to effectively improve the electron mobility by applying environmental annealing treatments with various gases to the solution based Li-doped ZnO TFTs. This technique was systematically designed to vary a different lithium ratio in order to confirm the electrical tendency of Li-doped ZnO TFTs. The observations of Scanning Electron Microscopy, Atomic Force Microscopy, and X-ray Photoelectron Spectroscopy were performed to investigate structural properties and elemental composition of our samples. In addition, I-V characteristics were carried out by using Keithley 4,200-Semiconductor Characterization System (4,200-SCS) with 4-probe system.

• Journal of the Korean Ceramic Society
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• v.44 no.1 s.296
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• pp.32-36
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• 2007

Zinc gallate $(ZnGa_2O_4)$ thin film phosphors have been formed on ITO glass substrates by a sol-gel spinning coating method. For the formation of the film phosphors, the starting materials of zinc acetate dihydrate, gallium nitrate hydrate and 2-methoxyethanol as a solution were used. The thin films deposited were firstly dried at $100^{\circ}C$ and fired at $500^{\circ}C\;or\;600^{\circ}C$ for 30 min and then, annealed $500^{\circ}C\;or\;600^{\circ}C$ at for 30 min under an annealing atmosphere of 3% $H_2/Ar$. The thin films deposited on ITO glass plates showed the (220), (222), (400), (422), (511), and (440) peaks of spinel structure as well as the (311) peak indicating a standard powder diffraction pattern. The surface morphologies of the thin film phosphors were observed with a firing and an annealing condition. The $ZnGa_2O_4$ film phosphors showed the blue emission spectra around 410 nm as well as the emission spectra in the UV region (360-380 nm).