• 제목/요약/키워드: Soft vacuum

검색결과 166건 처리시간 0.024초

Improvement of soft clay at a site in the Mekong Delta by vacuum preloading

  • Quang, N.D.;Giao, P.H.
    • Geomechanics and Engineering
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    • 제6권5호
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    • pp.419-436
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    • 2014
  • Soil improvement by preloading with PVD in combination with vacuum is helpful when a considerable load is required to meet the desired rate of settlement in a relative short time. To facilitate the vacuum propagation, vertical drains are usually employed in conjunction. This ground improvement method is more and more applied in the Mekong delta of Vietnam to meet the needs of fast infrastructure development. This paper reports on a pilot test that was carried out to investigate the effect of ground improvement by vacuum and PVD on the rate of consolidation at the site of Saigon International Terminals Vietnam (SITV) in Ba Ria-Vung Tau Province, Viet Nam. Three main aspects of the test will be presented, and namely, instrumentation and field monitoring program, calculation of consolidation settlement and back-analysis of soil properties to see the difference before and after ground improvement.

연약지반 개량을 위한 석션드레인공법의 적용 사례 (A Case Study on the Suction Drain Method for Soft Ground Improvement)

  • 김도형;김병일;한상재;이재주
    • 한국지반공학회:학술대회논문집
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    • 한국지반공학회 2009년도 춘계 학술발표회
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    • pp.743-749
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    • 2009
  • In this study, the field test for suction drain method which does not require a surcharge load and a sealing sheet was performed at west seashore's site constructed by the dredged and reclaimed clay. The improvements of soft ground by suction drain method was analyzed by the results of real-time field measurement, SPT(Standard Penetration Test) and laboratory tests. The results indicated that the soft ground improvement is effective the vertical drain method used with vacuum pressure rather than surcharge load with considering settlements, dissipation of pore water pressure and shear strength.

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대심도 연약지반에 적용한 Suction Drain 공법의 수치해석 사례 (A Case analysis for Suction Drain method on deep soft ground)

  • 김성호;한상재;안동욱;김병일;김수삼
    • 한국지반공학회:학술대회논문집
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    • 한국지반공학회 2009년도 세계 도시지반공학 심포지엄
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    • pp.1126-1131
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    • 2009
  • Suction Drain Method is soft ground improvement technique, in which a vacuum pressure can be directly applied to the Vertical Drain Board to promote consolidation and strengthening the soft ground. This method does not require a surcharge load, different to embankment or vertical drain method. In this study, Using Suction-CAIN program, which optimize th Suction Drain method, estimate validity Suction Drain method on deep soft ground

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배수재의 직경과 형상변화가 수평진공배수에 미치는 영향 (Effects of Size and Shape of Drain on Horizontal Vacuum Drain)

  • 유남재;박병수;정길수;이병곤
    • 산업기술연구
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    • 제21권A호
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    • pp.293-301
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    • 2001
  • This paper is experimental results of investigating the efficiency of horizontal vacuum drainage system. Effects of size and shape of drain on horizontal vacuum drainage were studied. Model tests in the laboratory with soft marine clay were carried out with drain pipe of having three different diameters and PBD (Plastic Board Drain) of strip shape so that consolidation settlement of soft clay due to applied vacuum pressure, amount of discharge, ground settlement and distributions of pore pressure and undrained shear strength were measured during testing. From results of model test, amount of discharge due to vacuum pressure was increased with the diameter of pipe drain whereas the drain efficiency of pipe in per unit area of drain surface was decreased with diameter of pipe. The rate of discharge per unit time was reduced very fast with diameter of pipe. Settlement of ground surface with time was increased with diameter of pipe as a result of increase of discharge to drain pipe.

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Soft Lithographic Approach to Fabricate Sub-50 nm Nanowire Field-effect Transistors

  • 이정은;이현주;고우리;이성규;;이민형
    • 한국진공학회:학술대회논문집
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    • 한국진공학회 2014년도 제46회 동계 정기학술대회 초록집
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    • pp.410.1-410.1
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    • 2014
  • A soft-lithographic top-down approach is combined with an epitaxial layer transfer process to fabricate high quality III-V compound semiconductor nanowires (NWs) and integrate them on Si/SiO2 substrates, using MBE-grown ultrathin InAs as a source wafer. The channel width of the InAs nanowires is controlled by using solvent-assisted nanoscale embossing (SANE), descumming, and etching processes. By optimizing these processes, the NW width is scaled to less than 50 nm, and the InAs NWFETs has ${\sim}1,600cm^2/Vs$ peak electron mobility, which indicates no mobility degradation due to the size.

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Selective cleavage of furoxan by soft x-ray

  • 황한나;김효상;문상운;김정숙;박준원;황광진;황찬국
    • 한국진공학회:학술대회논문집
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    • 한국진공학회 2006년도 제31회 학술논문발표회 초록집
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    • pp.102-102
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    • 2006
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