• 한국정밀공학회:학술대회논문집
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• 한국정밀공학회 2010년도 춘계학술대회 논문집
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• pp.537-538
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• 2010

• 한국정보디스플레이학회:학술대회논문집
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• 한국정보디스플레이학회 2006년도 6th International Meeting on Information Display
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• pp.45-48
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• 2006

Effectiveness and its possibility of ELA (Excimer Laser Annealing) for advanced Si TFT system on insulator are described. Currently, extensive study is carried out to realize an advanced SoG (System on Glass) based on LTPS (Low Temperature Poly-Si) technique. By reducing further the process temperature and by improving the fabrication process of LTPS, addressing TFT circuits for FPD (Flat Panel Display) can be mounted onto a flexible plastic as well as onto a glass substrate. Functional devices on the insulating panels are developed to be formed by using ELA. Although technical issues are remained for the fabrication process, Si transistors including 3D TFT structure formed by ELA is expected as a functional Si system on insulator in the ubiquitous IT era.

• 한국재료학회지
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• 제33권7호
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• pp.265-272
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• 2023

In this study, the synthesis of nitrobenzene was carried out using sulfated silica catalyst. The study delved into H₂SO₄/SiO₂ as a solid acid catalyst and the effect of its weight variation, as well as the use of a microwave batch reactor in the synthesis of nitrobenzene. SiO₂ was prepared using the sol-gel method from TEOS precursor. The formed gel was then refluxed with methanol and calcined at a temperature of 600 ℃. SiO₂ with a 200-mesh size was impregnated with 98 % H₂SO₄ by mixing for 1 h. The resulting 33 % (w/w) H₂SO₄/SiO₂ catalyst was separated by centrifugation, dried, and calcined at 600 ℃. The catalyst was then used as a solid acid catalyst in the synthesis of nitrobenzene. The weights of catalyst used were 0.5; 1; and 1.5 grams. The synthesis of nitrobenzene was carried out with a 1:3 ratio of benzene to nitric acid in a microwave batch reactor at 60 ℃ for 5 h. The resulting nitrobenzene liquid was analyzed using GC-MS to determine the selectivity of the catalyst. Likewise, the use of a microwave batch reactor was found to be appropriate and successful for the synthesis of nitrobenzene. The thermal energy produced by the microwave batch reactor was efficient enough to be used for the nitration reaction. Reactivity and selectivity tests demonstrated that 1 g of H₂SO₄/SiO₂ could generate an average benzene conversion of 40.33 %.

• 대한환경공학회지
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• 제22권10호
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• pp.1881-1891
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• 2000

석탄화력 발전소에서 석탄이 연소되면서 생성된 석탄회 중 Cenosphere는 속이 비어 있거나 미세 입자들로 채워져 있고 입자의 크기가 큰 구형의 입자로 물에 부유할 정도로 비중이 작을뿐만 아니라 입자의 벽면에 유리질 성분이 많은 입자이다. 본 연구는 Cenosphere 입자에 대한 형성메카니즘을 분석하여 형태적, 물리적, 화학적 특성을 파악하였다. Cenosphere는 석탄이 연소하면서 입자의 내부에서 발생된 가스가 밖으로 방출되면서 형성되기 때문에 입자가 부풀어져 크게 되고 가스의 분출로 입자의 표변에 구멍이 발생하며 알루미노실리케이트 (Aluminosilicate) 성분에 의해 형성된 기포가 용융표면층에 부착되어 Cenosphere내부에 미세 입자들을 형성한다. 이와 같온 입자의 형성메카니즘 특성 때문에 분말성이 좋으면서 가볍고 큰 입자를 형성한다. Cenosphere의 입도분포는 $100{\sim}200{\mu}m$에 집중된 Single Modal로 질량중앙직경은 $123.11{\mu}m$이고 비중은 $0.67g/cm^3$, 분말도는 $1,135g/cm^3$으로 분석되었다. 또한 Cenosphere의 입자를 구성하는 성분 중 $SiO_2$는 59.17%, $Al_2O_3$는 30.16%로 전체의 89.33%를 차지하고 있고 있어 알루미노실리케이트 성분, 즉 유리질 성분이 높아 열절연성이 뛰어나다. 따라서 Cenosphere 입자를 실리카 바인더로 입자를 결합하면 다양한 온도에서 사용할 수 있는 우수한 열절연체를 만들 수 있어 재활용 원료로 활용이 가능하다.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2016년도 제50회 동계 정기학술대회 초록집
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• pp.198.1-198.1
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• 2016

Organic light-emitting diode (OLED) displays have promising potential to replace liquid crystal displays (LCDs) due to their advantages of low power consumption, fast response time, broad viewing angle and flexibility. Organic light emitting materials are vulnerable to moisture and oxygen, so inorganic thin films are required for barrier substrates and encapsulations.[1-2]. In this work, the silicon-based inorganic thin films are deposited on plastic substrates by plasma-enhanced chemical vapor deposition (PECVD) at low temperature. It is necessary to deposit thin film at low temperature. Because the heat gives damage to flexible plastic substrates. As one of the transparent diffusion barrier materials, silicon oxides have been investigated. $SiO_x$ have less toxic, so it is one of the more widely examined materials as a diffusion barrier in addition to the dielectric materials in solid-state electronics [3-4]. The $SiO_x$ thin films are deposited by a PECVD process in low temperature below $100^{\circ}C$. Water vapor transmission rate (WVTR) was determined by a calcium resistance test, and the rate less than $10.^{-2}g/m^2{\cdot}day$ was achieved. And then, flexibility of the film was also evaluated.

• 한국재료학회지
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• 제5권6호
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• pp.690-698
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• 1995

Oxidized Si wafer 위에 반응가스로 Si $H_4$과 Ge $H_4$을 사용하여 RTCVD(rapid thermal chemical vapor deposition)법으로 증착온도 450~5$50^{\circ}C$에서 다결정 S $i_{1-x}$G $e_{x}$ 박막을 증착하였다. 증착된 S $i_{1-x}$, G $e_{x}$ 박막은 증착온도와 Ge $H_4$Si $H_4$입력비 변화에 따른 Ge몰분율 변화와 증착속도에 대해 고찰하였으며, XRD와 AFM(atomic force microscopy)등을 이용하여 결정상과 표면거칠기 등을 조사하였다. 실험결과, 다결정 S $i_{1-x}$G $e_{x}$ 박막은 32~37 Kcal/mole의 활성화에너지 값을 가졌으며 증착속도는 증착온도와 입력비 중가에 따라 증가하였다. 또한 조성분석으로부터 입력비 감소와 증착온도 증가에 따라 Ge몰분율이 감소함을 알 수 있었다. 증착된 S $i_{1-x}$G $e_{x}$ 박막은 450, 475$^{\circ}C$에서 임력비가 0.05일때 비정질 형태로 존재하였으며 그 이외의 실험영역에서는 다결정 형태로 존재하였다. 기존의 다결정 Si 중착온도($600^{\circ}C$이상)와 비교하여 Ge $H_4$을 첨가함으로써 비교적 낮은온도(5$50^{\circ}C$이하) 영역에서 다결정 S $i_{1-x}$G $e_{x}$ 박막을 얻을 수 있었다. 또한 증착층의 표면거칠기를 측정한 결과, 증착온도와 입력비가 증가함에 따라 표면 거칠기( $R_{i}$ )가 증가함을 알 수 있었다.을 알 수 있었다.

• Journal of Microbiology and Biotechnology
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• 제18권12호
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• pp.1919-1926
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• 2008

Statistical experimental designs; involving (i) a fractional factorial design (FFD) and (ii) a central composite design (CCD) were applied to optimize the culture medium constituents for production of a unique antifreeze protein by the Antartic micro algae Chaetoceros neogracile. The results of the FFD suggested that NaCl, KCl, $MgCl_2$, and ${Na}_{2}{SiO}_{3}$ were significant variables that highly influenced the growth rate and biomass production. The optimum culture medium for the production of an antifreeze protein from C. neogracile was found to be Kalle's artificial seawater, pH of $7.0{\pm}0.5$, consisting of 28.566 g/l of NaCl, 3.887 g/l of $MgCl_2$, 1.787 g/l of $MgSO_4$, 1.308 g/l of $CaSO_4$, 0.832 g/l of ${K_2}{SO_4}$, 0.124 g/l of $CaCO_3$, 0.103 g/l of KBr, 0.0288 g/l of $SrSO_4$, and 0.0282 g/l of ${H_3}{BO_3}$. The antifreeze activity significantly increased after cells were treated with cold shock (at $-5^{\circ}C$) for 14 h. To the best of our knowledge, this is the first report demonstrating an antifreeze-like protein of C. neogracile.

• 한국재료학회:학술대회논문집
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• 한국재료학회 2003년도 추계학술발표강연 및 논문개요집
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• pp.209-209
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• 2003

The adventages of Li alloys have attracted the attention of many research groups, many of which have investigated tin-based alloys [1-2], Despite interesting performances of these, the irreversible capacity loss systematically observed on the first cycle for these compounds is a main drawback for their use as anode materials in lithium ion cells. Not only Sn is efficient in forming alloys with Li, Si can also react with Li to form alloys with a high Li/Si ratio, like Li$\_$22/Si$\_$5/ at 400$^{\circ}C$. It corresponds to a capacity of 4200mAh/g. Electrochemical Li-Si reaction occurs between 0 and 0.3 V against Li/Li$\^$+/, so that high-energy density battery can be realized. Despite the high theoretical capacity of elements like Si, however, particles of the alloys crack and fragment due to the repeated alloying and do-alloying which occurs as cell are charged and discharged. The research groups of Muggins [3] and Besenhard [4] have proposed that the volume expansion due to the insertion of Li can be reduced in micro- and submicro-structured matrix alloys. For this reason, the research group of J.R. Dahn investigated Sn/Mo sequential sputter deposition to prepare nanocomposites [5]. In this study, we investigated the characterization and the electrochemical characteristics of sequentially sputtered Si/Mo multilayer for microbattery anode.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2009년도 제38회 동계학술대회 초록집
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• pp.271-271
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• 2010

고효율 실리콘 태양전지를 제작하기 위하여 surface passivation, 레이저와 lithography기술들이 연구되어 지고 있다. 결정질 실리콘 태양전지의 기판의 두께가 점점 얇아지면서 surface-to-volume 비율이 증가되어 surface passivation은 매우 중요하다. surface passivation은 크게 2가지 방법으로 진행되고 있으다. 첫 번째는 Si의 dangling bond의 passivation과 surface recombination process 제어에 기초를 두고 있다. 일반적으로 박막을 이용한 실리콘 passivation은 $SiO_2$, SiN, a-Si, $Al_2O_3$박막 4가지가 이용되어 왔다. 본 연구에서는 p-type SoG기판위에 원자층 증착법(ALD)을 이용하여 $Al_2O_3$박막의 negative fixed charge의 internal electric field로 surface passivation을 연구하였다. TMA와 $H_2O/O_3$을 사용하여 ALD $Al_2O_3$를 10~30nm두께를 갖도록 증착하였다. 표면 처리 조건, $Al_2O_3$박막 두께, ALD 공정 조건과 후열처리등에 따른 실리콘의 특성, carrier lifetime변화를 측정하여 효과적인 field induced passivation을 제시하고자 한다.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2001년도 춘계학술대회 논문집 유기절연재료 전자세라믹 방전플라즈마 연구회
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• pp.25-28
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• 2001

The objectives of this paper are to demonstrate the electrical degradation phenomena with Si atom's behaviors in the grainboundary of semiconducting ZnO ceramics. The ZnO ceramic devices used in this investigation were fabricated by standard ceramic techniques. Especially, $SiO_2$ were added to analyze the degradation characteristics with Si and sintered in oxygen ambient at $1300^{\circ}C$. The conditions of DC degradation test were $115{\pm}2^{\circ}C$ for 13h. Using XRD and SEM, the phase and microstructure of samples were analyzed respectively. E-J analysis was used to determine $\alpha$. Frequency analysis was accomplished to understand $R_g$ and $R_b$ at the equivalent circuit. Electrical stability improved as the amount of $SiO_2$ addition increased. This results were explain by the quantitative analysis and the line scanning method of EPMA.