• 한국환경과학회지
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• 제9권1호
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• pp.81-88
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• 2000

Every year, 1.1 million tons of rice-hull are produced in South Korea by the by-product in pounding rice. But they has mainly been utilized as a fuel, agricultural compost and moisture proofs. So, it's very valuable to use waste rice-hull for activated carbon manufacture. SiO2 content was the highest among inorganics in rice-hull. Therefore, the SiO2 extraction experiments were carried out under the various conditions of pH 9 to 14, reaction time from 2 to 24 hrs and various temperature of 20 to 100℃. The results showed that increase in pH and temperature enhanced SiO2 extraction from the carbonized rice-hull. The surface area of the carbonized rice-hull indicating activated carbon adsorption capacity was very small as 178∼191 m2/g at first. However, it was increased to 610∼675 m2/g when extracted in alkali solution at 100℃. When the mixing rate of carbonized rice-hull and NaOH was 1:1.5, iodine No. and surface area of activated rice-hull during 10 min at 700℃ were 1,650 mg/g and 1837 m2/g, respectively. Subsequently, an activated carbon with specific surface area of 1,300∼1,900m2/g was manufactured in a short contact time of 10∼30 min with a mixing rate of 1:1.5 in carbonized rice-hull and NaOH, and iodine No. and specific surface area increased as the amount of SiO2 removal increased.

• 한국정보디스플레이학회:학술대회논문집
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• 한국정보디스플레이학회 2004년도 Asia Display / IMID 04
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• pp.81-84
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• 2004

Required characteristics of poly-Si TFT's are investigated for the implementation of analog circuits to be integrated on System-on-Glass (SoG). Matching requirements on resistor values, threshold voltage and mobility of poly-Si TFT's are derived as a function of the resolution of display system. Effective mobility of poly-Si TFT's required for the realization of source driver is analyzed for various panel sizes.

• 자원리싸이클링
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• 제30권4호
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• pp.20-26
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• 2021

태양전지용 실리콘은 주로 반도체급 실리콘 제조공정에서 발생하는 규격외 실리콘을 사용하여 왔다. 태양전지의 보급 활성화를 위해서는 보다 저렴한 정제 공정의 개발이 필요하다. 태양전지용 실리콘을 위한 저비용이면서 효율적인 방법은 금속급 실리콘을 정제하여 고순도화하는 것이다. 본 연구에서는 금속급 용융 실리콘 중의 Fe를 제거하기 위해 고주파 유도로 중에서 일방향 응고를 실시하였다. 실험조건과 실험결과를 유효 편석계수, Scheil 식 및 Peclet 수로 평가하였다. 시료의 하강속도가 감소함에 따라 불순물의 매크로 편석과 잉곳의 순도가 증가하였다. 이러한 결과는 시료의 하강속도 감소에 따른 유효 편석계수의 감소에 의한 것으로 생각된다.

• 한국세라믹학회지
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• 제40권1호
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• pp.69-76
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• 2003

리튬이차 박막전지로서, 실리콘 첨가(0, 2, 6, 10, 20㏖%)에 따른 주석 산화물 박막을 기판온도 30$0^{\circ}C$, Ar:O$_2$=7:3으로 R.F. magnetron sputtering법으로 제조하였다. 실리콘의 함량이 증가함에 따라, Si-O 결합량이 증가하고 Sn-O 결합량은 감소하였다. 적정량의 실리콘 첨가는 주석의 산화상태를 감소시켜 비가역성을 줄이고 충방전 동안 주석의 부피변화를 막아 사이클 특성이 향상되는 결과를 보여주었다. 6㏖% Si를 첨가한 주석 산화물 박막은 100사이클동안 700mAh/g의 용량을 가지는 가장 좋은 사이클 특성을 나타내었다.

• 소성∙가공
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• 제13권6호
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• pp.522-527
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• 2004

Permalloys were successfully fabricated by melt drag casting in the present study, and their microstructure and consequent magnetic properties have been investigated as a function of Si content. In order to understand the relationship between magnetic properties and Si content, microstructure and texture were observed and phase analysis were performed by TEM. The effective permeability went through a maximum value at $2\%$ Si and then decreased with increasing Si content. Increasing Si content enlarged grain size, which resulted in improvement of permeability. However, over-added Si caused the formation of $Ni_3Fe$ order phase so that $5\%$ Si added permalloys had the smallest permeability.

• Journal of Microbiology and Biotechnology
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• 제18권12호
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• pp.1903-1907
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• 2008

Prodigiosin is a natural red pigment with algicidal activity against Cochlodinium polykrikoides, a major harmful red-tide microalga. To increase the yield of prodigiosin production by Hahella chejuensis KCTC 2396, significant medium components were determined using a two-level Plackett-Burman statistical design technique. Among 12 components included in basal medium, $NaHCO_3$, ${Na}_{2}{SiO}_{3}$, ${NH_4}{NO_3}$, ${Na}_{2}{SO}_{4}$ and $CaCl_2$ were determined to be important for prodigiosin production. The medium formulation was finally optimized using a Box-Behnken design as follows: 1% sucrose; 0.4% peptone; 0.1 % yeast extract; and (g/l): NaCl, 20.0; ${Na}_{2}{SO}_{4}$, 9.0; $CaCl_2$, 1.71; KCl, 0.4; and (mg/l): ${H_3}{BO_3}$, 10.0; KBr, 50.0; NaF, 2.0; $NaHCO_3$, 45.0; ${Na}_{2}{SiO}_{3}$, 4.5; ${NH_4}{NO_3}$, 4.5. The predicted maximum yield of prodigiosin in the optimized medium was 1.198 g/l by the Box-Behnken design, whereas the practical production was 1.495 g/l, which was three times higher than the basal medium (0.492 g/l).

• 태양에너지
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• 제18권3호
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• pp.137-146
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• 1998

In this paper, the current status of manufacturing technologies for GaAs/Si solar cell were revived and provied new MOCVD. In the manufacturing process of GaAs/Si solar cells and an experiment to get the high efficiency GaAs solar cells, we must investigate the optimum growth conditions to get high quality GaAs films on Si substrates by MOCVD. The GaAs on Si substrates has been recognized as a lightweight alternative to pure substrate for space applicaton. Because its density is less the half of GaAs or Ge.So GaAs/Si has twofold weight advantage to GaAs monolithic cell. The theoretical conversion efficiecy limit of tandem GaAs/Si solar cell is 32% under AM 0 and $25^{\circ}C$ condition. It was concluded that the development of cost effective MOCVD technologies shoud be ahead GaAs solar cells for achived move high efficiency III-V solar cells involving tandem structure.

• 산업기술연구
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• 제32권A호
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• pp.119-123
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• 2012

Diamond-like carbon(DLC) thin films with interlayer were deposited on silicon substrate using a reactive sputtering method. The thermal stability of the films was investigated by annealing the films for 1hr in air in the range of 100 to $500^{\circ}C$. The $I_D/I_G$ ratio increased with increasing temperature as related to the $sp^3-to-sp^2$transition. Accordingly, G-position shifting started from $150^{\circ}C$ in the DLC films and from $270^{\circ}C$ in the a-Si/DLC films. Moreover, in the case of the a-Si/DLC films the film still observed even after annealing at $500^{\circ}C$. The thermal stability of the reactive sputtered DLC films appeared to be improved by the a-Si interlayer.

• 자원리싸이클링
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• 제29권5호
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• pp.48-54
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• 2020

소다배소 처리한 탈질폐촉매의 수침출 잔사로부터 TiO₂ 회수를 위하여 황산침출과 가수분해 반응을 실시하였다. Ti 성분의 황산침출은 70 ℃, 3 시간, 교반속도 500 rpm, 슬러리 농도 100 g/L로 고정하여 실시하였고, 황산농도는 4~8 M로 변화시키며 진행하였다. 침출액으로부터 Ti 성분의 침전회수는 가수분해반응을 이용하였으며, 실험조건은 100 ℃, 반응시간 2 시간으로 고정하였고, Ti 성분의 침전율은 침출액과 증류수의 혼합비와 침전반응 Seed 혼입유무에 따라 비교하였다. Ti의 침출율은 6 M에서 최대 95.2 %까지 도달 후 점차 감소하는 경향을 나타내었고, Si의 침출율은 황산농도 증가에 반비례하여 급격히 감소하여 91.7 %에서 8 M 조건에서는 3.0 %까지 억제되었다. 침출액을 이용한 가수분해는 부성분인 Si의 함량이 가장 낮은 8 M 침출액을 이용하여 진행하였다. 침출액의 혼합비에 의한 Ti의 침전회수율은 반응시간에 비례하였고 혼합비에 반비례하였다. 또한, 침전반응의 가속화를 위해 TiO₂(#325~#400 mesh, 0.2 g) seed를 첨가하였을 경우에 모든 혼합조건에서 침전회수율이 상승하였으며, 혼합비(침출액:증류수) 1:9~3:7 구간에서 98.8~99.8 %의 침전율이 달성되었다. 회수된 TiO₂의 순도는 침출액 혼합비 1:9~3:7 구간에서 혼합비가 낮을수록 증가하여 최대 99.46 %까지 상승함을 확인하였다.

• 한국전기전자재료학회논문지
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• 제22권11호
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• pp.910-917
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• 2009

We have designed a new structures of Junction Field Effect Transistor(JFET) using SILVACO simulation to improve electrical properties and process reliability. The device structure and process conditions of Si control JFET(Si JFET) were determined to set cut off voltage and drain current(at Vg=0 V) to -0.46 V and $300\;{\mu}A$, respectively. Among many design parameters influencing the performance of the device, the drive-in time of p-type gate is presented most predominant effects. Therefore we newly designed SiGe JFET, in which SiGe layers were placed above and underneath of Si-channel. The presence of SiGe layer could lessen Boron into the n-type Si channel, so that it would be able to enhance the structural consistency of p-n-p junction. The influence of SiGe layer could be explained in conjunction with boron diffusion and corresponding I-V characteristics in comparison with Si-control JFET.