• Title/Summary/Keyword: SoG-Si

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Crystal field splitting energy for $CdGa_2Se_4$ epilayers obtained by photocurrent measurement (광전류 측정으로부터 얻어진 $CdGa_2Se_4$ 에피레이어의 결정장 갈라짐에 대한 에너지)

  • Hong, Kwang-Joon
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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    • 2009.06a
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    • pp.144-145
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    • 2009
  • Single crystal $CdGa_2Se_4$ layers were grown on a thoroughly etched semi-insulating GaAs(100) substrate at $420^{\circ}C$ with the hot wall epitaxy (HWE) system by evaporating the poly crystal source of $CdGa_2Se_4$ at $630\;^{\circ}C$. The crystalline structure of the single crystal thin films was investigated by the photoluminescence and double crystal X-ray diffraction (DCXD). The carrier density and mobility of single crystal $CdGa_2Se_4$ thin films measured with Hall effect by van der Pauw method are $8.27\;\times\;10^{17}\;cm^{-3}$, $345\;cm^2/V{\cdot}s$ at 293 K, respectively. The photocurrent and the absorption spectra of $CdGa_2Se_4$/SI(Semi-Insulated) GaAs(100) are measured ranging from 293 K to 10K. The temperature dependence of the energy band gap of the $CdGa_2Se_4$ obtained from the absorption spectra was well described by the Varshni's relation, $E_g$(T) = 2.6400 eV - ($7.721\;{\times}\;10^{-4}\;eV/K)T^2$/(T + 399 K). Using the photocurrent spectra and the Hopfield quasi cubic model, the crystal field energy(${\Delta}cr$) and the spin-orbit splitting energy(${\Delta}so$) for the valence band of the $CdGa_2Se_4$ have been estimated to be 106.5 meV and 418.9 meV at 10 K, respectively. The three photocurrent peaks observed at 10 K are ascribed to the $A_1$-, $B_1$-, and $C_{11}$-exciton peaks.

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The Residual Stress of TiN Thin Film Deposited by PECVD (PECVD에 의해 증착된 TiN 박막의 잔류응력)

  • Song, K.D.;Nam, D.H.;Lee, I.W.;Lee, G.H.;Kim, M.I.
    • Journal of the Korean Society for Heat Treatment
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    • v.6 no.2
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    • pp.70-78
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    • 1993
  • The presence of a residual stress in a thin film affects the properties and performances of the film, so the study of stress in a film must be very important. In this study, therefore, considering the characteristics of PECVD process, it was discussed that the residual stress, measured by $sin^2{\Psi}$ method, fo TiN films deposited on substrates with different TECs (thermal expansion coefficients) changed with film thickness. As a results, it was obtained that the residual stress of TiN film was compressive stress about all kinds of substrates and increased with film thickness. Also, the compressive residual stresses of TiN films increased in Si, Ti, STS304 order. According to the above results, we confirmed that the changes of residual stress of TiN film with substrates were due to the thermal stress originated form the difference in the TECs of the film and substrates, and that the intrinsic stress had dominating effect on the residual stress of TiN film deposited by PECVD. And in this study, the intrinsic stress of TiN film was compressive stress in spite of the Zone 1 structure. It is due to the entrapment of impurities in grain boundary or void.

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Source Identification of Ambient PM-10 Using the PMF Model (PMF 모델을 이용한 대기 중 PM-10 오염원의 확인)

  • 황인조;김동술
    • Journal of Korean Society for Atmospheric Environment
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    • v.19 no.6
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    • pp.701-717
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    • 2003
  • The objective of this study was to extensively estimate the air quality trends of the study area by surveying con-centration trends in months or seasons, after analyzing the mass concentration of PM-10 samples and the inorganic lements, ion, and total carbon in PM-10. Also, the study introduced to apply the PMF (Positive Matrix Factoriza-tion) model that is useful when absence of the source profile. Thus the model was thought to be suitable in Korea that often has few information about pollution sources. After obtaining results from the PMF modeling, the existing sources at the study area were qualitatively identified The PM-10 particles collected on quartz fiber filters by a PM-10 high-vol air sampler for 3 years (Mar. 1999∼Dec.2001) in Kyung Hee University. The 25 chemical species (Al, Mn, Ti, V, Cr, Fe, Ni, Cu, Zn, As, Se, Cd, Ba, Ce, Pb, Si, N $a^{#}$, N $H_4$$^{+}$, $K^{+}$, $Mg^{2+}$, $Ca^{2+}$, C $l^{[-10]}$ , N $O_3$$^{[-10]}$ , S $O_4$$^{2-}$, TC) were analyzed by ICP-AES, IC, and EA after executing proper pre - treatments of each sample filter. The PMF model was intensively applied to estimate the quantitative contribution of air pollution sources based on the chemical information (128 samples and 25 chemical species). Through a case study of the PMF modeling for the PM-10 aerosols. the total of 11 factors were determined. The multiple linear regression analysis between the observed PM-10 mass concentration and the estimated G matrix had been performed following the FPEAK test. Finally the regression analysis provided source profiles (scaled F matrix). So, 11 sources were qualitatively identified, such as secondary aerosol related source, soil related source, waste incineration source, field burning source, fossil fuel combustion source, industry related source, motor vehicle source, oil/coal combustion source, non-ferrous metal source, and aged sea- salt source, respectively.ively.y.

A Method for Describing the Information of the Broadcasting Program's Time-Slots and Its Application to a Data Service (방송프로그램의 구간 별 부가정보 기술 방법과 이를 활용한 데이터서비스 개발 사례)

  • KO, Kwangil
    • Convergence Security Journal
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    • v.15 no.4
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    • pp.19-25
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    • 2015
  • Although the data service of the digital broadcasting has been regarded as the representative service of the broadcasting and communication convergence, it, however, has failed to gain the popularity with the viewers due to the viewer's viewing modality of focusing only on the TV programs. Based on the experts' opinions that the data service should step up so that using a data service while watching a TV program creates a synergy effect, the paper proposes a method for allowing a data service to utilize the information of a TV program. The method has a tool for describing the information of a TV program's content, which changes as time goes on and provides a mechanism for transmitting the information in the way compatible to the digital broadcasting standard. As an application of the method, with a domestic data service developing company, we have developed a ticker data service that shows the information (e.g., actors, places, sponsors, etc.) of a drama.

Characteristic Evaluation of Anodic Film Depending on the Concentration of Sodium Silicate in the Electrolyte Anodized AZ31B Magnesium Alloy (전해액 중 Sodium silicate의 농도에 따라 양극 산화된 AZ31B 마그네슘 합금 양극 피막의 특성 평가)

  • Lee, Dong-Kil;Kim, Yong-Hwan;Park, Hyun;Jung, Uoo-Chang;Chung, Won-Sub
    • Journal of the Korean institute of surface engineering
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    • v.42 no.3
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    • pp.109-115
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    • 2009
  • Magnesium is one of the lightest metals, and magnesium alloys have excellent physical and mechanical properties such as high stiffness/weight ratios, good castability, good vibration and shock absorption. However their poor corrosion resistance, wear resistance, hardness and so on, have limited their application. To improve these defects, many techniques are developed. Micro arc oxidation(MAO) is a one of the surface treatments under anodic oxidation in which ceramic coating is directly formed on the surface of magnesium alloy. In this study, the characteristics of anodic film were examined after coating the AZ31B magnesium alloy through the MAO process. MAO was carried out in potassium hydroxide, potassium fluoride, and various concentration of sodium silicate in electrolyte. The morphology and chemical composition of the coating layer were characterized by SEM, XRD, EPMA and EDS. The hardness of anodic films was measured by micro-vickers hardness tester. As a result, the morphology and composition of anodic film were changed by concentration of sodium silicate. Thickness and Si composition of anodic film was increased with increasing concentration of sodium silicate in electrolyte. The hardness of anodic film was highly increased when the concentration of sodium silicate was above 40 g/l in electrolyte.

Growth and photocurrent study on the splitting of the valence band for ZnIn2S4 single crystal thin film by hot wall epitaxy (Hot Wall Epitaxy (HWE)법에 의한 ZnIn2S4 단결정 박막 성장과 가전자대 갈라짐에 대한 광전류 연구)

  • Hong, Kwang-Joon
    • Journal of Sensor Science and Technology
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    • v.16 no.6
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    • pp.419-427
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    • 2007
  • Single crystal $ZnIn_{2}S_{4}$ layers were grown on a thoroughly etched semi-insulating GaAs(100) substrate at $450^{\circ}C$ with the hot wall epitaxy (HWE) system by evaporating the polycrystal source of $ZnIn_{2}S_{4}$ at $610^{\circ}C$ prepared from horizontal electric furnace. The crystalline structure of the single crystal thin films was investigated by the photoluminescence and double crystal X-ray diffraction (DCXD). The carrier density and mobility of single crystal $ZnIn_{2}S_{4}$ thin films measured with Hall effect by van der Pauw method are $8.51{\times}10^{17}\;electron/cm^{-3}$, $291{\;}cm^{2}/v-s$ at 293 K, respectively. The photocurrent and the absorption spectra of $ZnIn_{2}S_{4}$/SI(Semi-Insulated) GaAs(100) are measured ranging from 293 K to 10 K. The temperature dependence of the energy band gap of the $ZnIn_{2}S_{4}$ obtained from the absorption spectra was well described by the Varshni's relation, $E_g(T)$=2.9514 eV. ($7.24{\times}10^{-4}\;eV/K$)$T^{2}$/(T+489 K). Using the photocurrent spectra and the Hopfield quasicubic model, the crystal field energy(${\Delta}cr$) and the spin-orbit splitting energy(${\Delta}so$) for the valence band of the $ZnIn_{2}S_{4}$ have been estimated to be 167.8 meV and 14.8 meV at 10 K, respectively. The three photocurrent peaks observed at 10 K are ascribed to the $A_{1}$-, $B_{1}$-, and $C_{41}$-exciton peaks.

Effects of Physical Activity and Melatonin in a Rat Model of Depression Induced by Chronic Stress (자유로운 신체운동과 멜라토닌이 우울장애 동물모델에 미치는 효과)

  • Seong, Ho Hyun;Jung, Sung Mo;Kim, Si Won;Kim, Youn Jung
    • Journal of Korean Biological Nursing Science
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    • v.17 no.1
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    • pp.37-43
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    • 2015
  • Purpose: Stress, depending on its intensity and duration, results in either adaptive or maladaptive physiological and psychological changes in humans. Also, it was found that stressful experiences increase the signs of behavioral despair in rodents. On the other hand, exercise and melatonin treatment is believed to have many beneficial effects on health. Thus, this study was designed to evaluate the anti-depressant effects of physical activity and melatonin against chronic stress-induced depression in rats. Methods: Adult male Sprague-Dawley(SD) rats(200-250g, 7 weeks of age) were subjected to depression induced by chronic stress. Chronic depression was induced with forced-swim stress (FSS) and repeated change of light-dark cycle for 4 weeks. In the last 2 weeks, some rats were confined in a cage enriched with a running wheel, seesaw and chewed a ball from 19:00 to 07:00 every day. Melatonin was injected intra-peritoneally (I.P), and the rats received intraperitoneal injections of melatonin (15 mg/kg). The Forced Swim Test (FST) was performed to evaluate the immobility behaviors of rats for a 5 min test. Results: It was found that, the immobility time in FST was significantly (p<.05) lower in physical exercise ($M=58.83{\pm}22.73$) and melatonin ($M=67.33{\pm}37.73$) than in depressive rats ($M=145.93{\pm}63.16$) without physical activity. Also, TPH positive cell in dorsal raphe was significantly (p<.05) higher in exercise ($M=457.38{\pm}103.21$) and melatonin ($M=425.38{\pm}111.56$) than in depressive rats ($M=258.25{\pm}89.13$). Conclusion: This study suggests that physical activity and melatonin produces antidepressant-like effect on stress-induced depression in rats. So, physical exercise and melatonin may be a good intervention in depression patients.

Photocurrent properties for $CdGa_2Se_4$ single crystal thin film grown by using hot wall epitaxy(HWE) method (Hot Wall Epitaxy(HWE)법에 의한 $CdGa_2Se_4$ 단결정 박막의 광전류 연구)

  • You, Sang-Ha;Hong, Kwang-Joon
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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    • 2007.11a
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    • pp.124-125
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    • 2007
  • Single crystal $CdGa_2Se_4$ layers were grown on a thoroughly etched semi-insulating GaAs(100) substrate at $420^{\circ}C$ with the hot wall epitaxy (HWE) system by evaporating the polycrystal source of $CdGa_2Se_4$ at $630^{\circ}C$ prepared from horizontal electric furnace. The photocurrent and the absorption spectra of $CdGa_2Se_4$/SI(Semi-Insulated) GaAs(100) are measured ranging from 293K to 10K. The temperature dependence of the energy band gap of the $CdGa_2Se_4$, obtained from the absorption spectra was well described by the Varshni's relation, $E_g$(T) = 2.6400 eV - $(7.721{\times}10^{-4}\;eV/K)T^2$/(T + 399 K). Using the photocurrent spectra and the Hopfield quasicubic model, the crystal field energy$({\Delta}cr)$ and the spin-orbit splitting energy$({\Delta}so)$ for the valence band of the $CdGa_2Se_4$ have been estimated to be 106.5 meV and 418.9 meV at 10 K, respectively. The three photocurrent peaks observed at 10 K are ascribed to the $A_{1^-},\;B_{1^-},\;and\;C_{11^-}$ exciton peaks.

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Temperature dependence of optical energy gaps and thermodynamic function of $Zn_{4}SnSe_{6}$ and $Zn_{4}SnSe_{6}:Co^{2+}$ single crystals ($Zn_{4}SnSe_{6}$$Zn_{4}SnSe_{6}:Co^{2+}$ 단결정에서 광학적 에너지 띠 및 열역학적 함수의 온도의존성 연구)

  • Kim, D.T.;Kim, N.O.;Choi, Y.I.;Kim, B.C.;Kim, H.G.;Hyun, S.C.;Kim, B.I.;Song, C.I.
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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    • 2002.08a
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    • pp.25-30
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    • 2002
  • The ternary semiconducting compounds of the $A_{4}BX_{6}$(A=Cd, Zn, Hg; B=Si, Sn, Ge; X=S, Se, Te) type exhibit strong fluorescence and high photosensitivity in the visible and near infrared ranges, so these are supposed to be materials applicable to photoelectrical devices. These materials were synthesized and single crystals were first grown by Nitsche, who identified the crystal structure of the single crystals. In this paper. author describe the undoped and $Co^{2+}$-doped $Zn_{4}SnSe_{6}$ single crystals were grown by the chemical transport reaction(CTR) method using iodine of $6mg/cm^{3}$ as a transport agent. For the crystal. growth, the temperature gradient of the CTR furnace was kep at $700^{\circ}C$ for the source aone and at $820^{\circ}C$ for the growth zone for 7-days. It was found from the analysis of x-ray diffraction that undoped and $Co^{2+}$-doped $Zn_{4}SnSe_{6}$ compounds have a monoclinic structure. The optical absorption spectra obtained near the fundamental absorption edge showed that these compounds have a direct energy gaps. These temperature dependence of the optical energy gap were closely investigated over the temperature range 10[K]~300[K]

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Comparison of Agronomic Characteristics and Activity Variation of ADP-Glucose Pyrophosphorylase at Different Growth Stages in Soybean Cultivars (콩 품종의 생육특성 및 생육단계별 ADP-Glucose Pyrophosphorylase의 활성변화 비교)

  • Kim, Young-Jin;Lee, Si-Myeong;Cho, Sang-Kyun;Oh, Young-Jin;Kim, Hag-Sin
    • KOREAN JOURNAL OF CROP SCIENCE
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    • v.55 no.2
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    • pp.139-143
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    • 2010
  • The relationship between ADP-glucose pyrophosphorylase (AGP) activity and the characteristics of related pod setting in developing seed of soybean cv. Pungsannamulkong, Iksannamulkong, Geumjeongkong #1 and Danpaheuk was studied. AGP activity during the accumulate of the majority of dry matter in all cultivars suggested that this enzyme might be associated with this process. At the Vn and R1 stages, AGP activity of full-grown leaves of Pungsannamulkong, Iksannamulkong, Geumjeongkong #1 was the highest and then decreased progressively. However AGP activity of Danpaheuk was the lowest and also had lower seed weight. So regulation of matter accumulation in developing soybean seeds may also depend on AGP activity. AGP capacities as expressed by AGP activity seem to have a good predicting value for the dry matter of leaf and seed at R1 to R5 stages in our series of R3 stage genotypes. Western blots probed with antibody specific to the subunit of potato AGP revealed a single 60KD immunoreactive band that changed in intensity during the growth cycle in association with changes in total AGP activity.