• Korean Journal of Environmental Agriculture
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• v.18 no.2
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• pp.179-184
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• 1999

To examine the relationship between air pollution and occurrence of disease in plants, we investigated the alteration of physiology and biochemistry of Ginkgo biloba by inoculating with Coniothyrium sp. and fumigating with 0.1 ${\mu}l/l\;SO_{2-}$ Visual damage did not appear but photosynthesis, $CO_2$ use efficiency(CUE) and water use efficiency(WUE) were reduced when G. biloba was exposed to $SO_{2-}$for 7days (8 hours a day). When inoculated with Coniothyrium sp., the seventies of damage in G. biloba showed a threefold difference between $SO_{2-}$ treatment (SI) and $SO_{2-}$ free treatment (SFI) at day 42 from initial inoculation. Little difference was observed in sugar contents that may be used pathogens feed, among control, SFI and SI. In spite of the reduction in photosynthetic rate, sugar contents and CUE were maintained. WUE was enhanced 13% more at SI than SFI. The $CO_2$fixation boosted because of enhanced WUE, and thus sugar synthesis was not affected. In addition, sugar transport seems to be retarded for some internal alteration. Consequently, the severity of SI was more serious than that of SFI because Coniothyrium sp. easily invades into the physical texture of G. biloba weakened by $SO_2$ fumigation and because sugar was accumulated in leaves of G. biloba.

• 한국신재생에너지학회:학술대회논문집
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• 2010.06a
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• pp.57.2-57.2
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• 2010

최근 친환경적이고 저투자비용의 빠른 생산성을 가진 야금화학적인 방법으로의 태양전지급 실리콘 생산공정이 빠르게 성장하고 있다. 이로 인해 금속급 실리콘(MG-Si)에서부터 태양전지급 실리콘(SoG-Si)으로의 정련공정 또한 많은 연구가 진행되고 있다. 본 연구에서는 UMG-Si 내 주요 불순물인 Boron함량을 SoG-Si 순도로 정련하는 것을 목표로 기존의 방법과 달리 전자기연속주조정련법을 사용하여 도가니 비접촉식 용융 후 스팀플라즈마토치를 통해 Boron을 제거하고자 하였다. 실험에 사용한 가스 유량은 $H_2O$ 0.3~1.0ml/min, $H_2$ 20~40ml/min 이며 실험 후 ICP-MASS 분석 결과 초기 Boron 함량 2.9ppm으로부터 0.17ppm으로 줄었음을 확인하였다.

• 한국신재생에너지학회:학술대회논문집
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• 2010.06a
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• pp.83.2-83.2
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• 2010

최근, 원유 가격의 상승으로 인해 태양에너지에 대한 관심이 크게 증가되고 있다. 그러나 이러한 태양전지용 Si(SoG-Si)의 대부분을 차지하는 태양전지급 다결정 실리콘 원료를 대부분 수입에 의존하고 있는 실정이다. 이에 대한 기술적 대응으로서 최근에는 고비용의 기상법을 해결하기 위하여 야금학적인 정련법을 이용한 제조기술 개발이 세계적으로 주목받고 있으며, 야금학적 정련기술은 지적재산권에 관한 기술적 배타성을 제고 할 수 있을 뿐 만 아니라 기상법의 Si 대비 낮은 품위 에도 불구하고 태양전지용 실리콘의 사용가능성을 제시함으로서 활발한 연구와 함께 실용화기술로 대두되고 있다. 그러므로 본 연구는 기존 사용 중인 고가의 기상법 폴리실리콘 제조와 달리, 생산 가격경쟁력이 있는 규석광으로부터 고순도금속 및 태양전지급 폴리실리콘 생산 연속 종전기술을 개발하고자 하였다. 금속급 Si(이하 MG-Si)으로부터 경제적인 SoG-Si을 제조하기 위한 공정 개발을 일환으로 MG-Si 중 불순물인 P 원소를 효과적으로 정련할 수 있는 슬래그 정련기술 개발과 슬래그설계 기술개발을 기본목표로 설정하여 고찰하였다. 용융 Silicon과 슬래그계면에 설정되는 산소분압제어에 따른 슬래그의 P의 이온 안정성을 변화시킴으로서, MG-Si중 P를 분리제거를 기본개념으로 설정하였다. 염기성 산화물로 산소이온이 공급됨을 이용하여 염기도에 따른 분배비를 고찰한 결과, CaO의 활동도가 증가함에 따라 슬래그 중 $O^{2-}$의 활동도와 함께 phosphide 이온의 안정성이 증가함을 확인하였다. 그리고 슬래그로부터 실리콘 중 Ca의 용해도에 따른 분배비를 확인하기 위해 실험 후 Si에서 Ca의 성분을 분석한 결과, 실리콘 중 Ca 용해도는 염기도($a_{CaO}/\sqrt{a_{SiO_2}}$)의 증가와 함께 증가하였으며, Ca의 용해도 증가는 탈린능을 증가시킨다는 것을 알 수 있었다. 또한 수소분압을 변화시켜 인의 증기압변화 및 기화정련 효과를 알 수 있었으며, acid leaching을 통해 잔존해있는 불순물을 추가적으로 정련될 수 있는 가능성을 확인할 수 있었다.

• Economic and Environmental Geology
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• v.44 no.5
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• pp.359-372
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• 2011

TA26 seamount, which is located at south part of Tonga arc, occurs widely hydrothermal plume and is area that sampled hostrock, hydrothermal ore and hydrothermal alteration rock for this study. Hostrocks are basalt and basaltic andesite. Altered rocks by hydrothermal solution consists of plagioclase, pyroxene, pyrite, ilmenite, amorphous silica, barite, smectite, iron sulfates, Fe-Si sulfates and Fe silicates. Gains and losses of major, trace and rare earth elements during wallrock alteration suggest that $K_2O$(+0.04~+0.45 g), $SiO_2$(-6.52~+10.56 g), $H_2O$(-0.03~+6.04 g), $SO_4$(-0.46~+17.54 g), S(-0.46~+13.45 g), total S(-0.51~+16.93 g), Ba(-7.60~+185078.62 g), Sr(-36.18~+3033.08 g), Ag(+54.83 g), Au(+1467.49 g), As(-5.80~+1030.80 g), Cd(+249.78 g), Cu(-100.57~+1357.85 g), Pb(+4.91~+532.65 g), Sb(-0.32~+66.59 g), V(-113.58~+102.94 g) and Zn(-49.56~+14989.92 g) elements are enriched from hydrothermal solution. Therefore, gained(enriched) elements(($K_2O$, $H_2O$, $SO_4$, S, total S, Ba, Sr, Ag, Au, As, Cd, Cu, Pb, Sb, V, Zn) represent a potentially tools for exploration of sea-floor hydrothermal deposits from the Tonga arc.

• 한국태양에너지학회:학술대회논문집
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• 2009.11a
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• pp.86-91
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• 2009

In this paper, we analyze the Transition of Isc by natural solar spectrum of c-Si and a-Si PV module. Commonly, performance of photovoltaic (PV) module is estimated under the standard test condition (STC). That is, solar irradiance $1kW/m^2$, solar spectrum distribution: AM1 5G, module temperature $25^{\circ}C$ This means it rarely meets actual outdoor conditions. The solar spectrum always changes. So it is rare to fit the standard solar spectrum AM1 5G defined in ASTM G173-03 or IEC 60904-3. Thus spectral response of PV module is different depending on the material. so we estimated the variation of Isc at every minutes by comparing c-Si PV module with a-si PV module for outdoor conditions.

• Journal of the Korean institute of surface engineering
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• v.23 no.1
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• pp.34-43
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• 1990

Al-Si piston alloys such as AlS10CuMg have been anodized to examine apossibility of forming a hard film aat relatively higher temperatures compard with those in conventional sulfuric acid processes. Three types of electrolytes have been employed in this study ; electrolyte A(15% H2SO4, $0^{\circ}C$), electrolyte B(12% H2SO4, 1% oxalic, $10^{\circ}C$), electrolyte C(tartaric acid 125g/L+oxalic 75g/L+aluminum sulfate 225g/L, $25^{\circ}C$). Hard anodisine process in electrolyte B at a current density of 1.54A/dm2 produced a harder film of VHN 396 at a relatibely low film forming voltage compared with those obtained in other electrolyte at equivalent current density. A liner relationship between hardness and abrasion resistance exists for Al-Si piston alloys. The hardness of anodized film decreasees with increasing silicon content in Al-Si alloys and also with bath temperature. The film hardeness of Na-modified alloy os higher than that of P-modified alloy due to its finer microstructre. The film on the silicon phase in Al-Si alloys is observed to be formed by lateral growth of oxide film nucleated at surroundings.

• Journal of the Korean institute of surface engineering
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• v.37 no.6
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• pp.319-325
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• 2004

Fe thin films containing Si particles were prepared on metallic substrates by electrodeposition method in sulfate solutions and the content of codeposited Si particles in the films was investigated as a function of applied current density, the content of Si particels in the solution, solution pH, solution temperature and concentration of $FeSO_4$$7H_2$O in the solution. The amount of Si codeposited in the film was not dependent on the applied current density, solution pH and solution temperature, while it was dependent on the content of Si particles in the solution and the concentration of $FeSO_4$$7H_2$O in the solution. The amount of Si codeposited in the film increased with increasing content of Si particles in the solution but reached a maximum value of about 6 wt% when the content of Si particles in the solution exceeds 100 g/l. On the other hand, the content of Si codeposited in the film increased up to about 17 wt% with decreasing concentration of $FeSO_4$$7H_2$O in the solution. These results would be applied to the fabrication of very thin Fe-6.5 wt% Si sheets for electrical applications.

• 한국신재생에너지학회:학술대회논문집
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• 2009.06a
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• pp.126-129
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• 2009

In this study, it was aimed to develop the re-use technology of ultra-fine silicon powders, by-products during the current production process of high purity poly-Si feedstock. For this goal, the compacts of the silicon powders were tried to fabricate by CIP (Cold Isostatic Pressing) method using silicon rubber mold without chemical binder materials. The density ratio of the silicon powder compacts reached 74%. In order to simulate the actual handling and charging conditions of feedstock material in casting process, a shaking test was carried out and mass loss measured. Finally, the silicon powder compacts were melted using a cold crucible induction melting method and the purity assessment was conducted by Hall effect measurement.

• Journal of Information Display
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• v.5 no.4
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• pp.1-6
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• 2004

In this paper, we investigate on the characteristics of poly-Si TFTs reuired for the implementation of analog circuits to be integrated with System-on-Glass (SoG). Matching requirements in terms of resistor values, threshold voltage and mobility of poly-Si TFTs are derived as a function of the resolution of display system. Effective mobility of poly-Si TFTs required for the realization of source driver is analyzed for various panel sizes.

• Resources Recycling
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• v.7 no.5
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• pp.33-40
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• 1998

The formation reation of anhydrite (CaSO$_{4}$) depends upon the amount and velocity of the SO$_{3}$(g) and CaO(s) produced in the process of the thermal decomposition of alunite[K$_{2}SO_{4}{\cdot}Al_{2}(SO_{4})_{3}{\cdot}4Al(OH)_{3}$] and limestone (CaCO$_{3}$) respectively. Therefore, this study had carried out to investigate the amount and velocity of SO$_{3}$(g) produced by roasting alunite and pyrolytic materials. In air, alunite was transfouned into KAl(SO$_{4})_{2}$ and Al$_{2}O_{3}$ by dehydration at 500~580$^{\circ}C$. The dehydration velocity of alunite was found to be kt=(1-(1-${\alpha})^{1/3})^{2}$, the activation energy, 73.01 kcal/mol. SO$_{3}$(g) ware slowly produced by the thermal decomposition of KAl(SO$_{2})_{2}$, at 580~700$^{\circ}C$, rapidly, at 700~780$^{\circ}C$, The pyrolysis velocity of KAl(SO$_{4})_{2}$ was found to be kt=1-(1-${\alpha})^{1/1}$; activation energy, 66.84kcal/mol. The SiO$_{2}$ and kaolinite in alunite ore scarcely affected the temperature and velocity in which SO$_{3}$(g) were produced.