• Journal of the Korean Institute of Telematics and Electronics
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• v.13 no.6
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• pp.16-19
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• 1976

InSb-Sn thin film Hall device Was drepared by flash evaporation of InSb-Sn powder on the Slide qlass. The Characteristics Curve of this device showcd good linearity and reproducibility.

• Journal of Powder Materials
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• v.18 no.5
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• pp.401-405
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• 2011

Half-heusler phase ZrNiSn is one of the potential thermoelectric materials for high temperature application. In an attempt to investigate the effect of Sb doping on thermoelectric properties, half-heusler phase $ZrNiSn_{1-x}Sb_x$ ($0{\leq}x{\leq}0.08$) was synthesized by mechanical alloying of stoichiometric elemental powder compositions, and consolidated by vacuum hot pressing. Phase transformations during mechanical alloying and hot consolidation were investigated using XRD. Sb doped ZrNiSn was successfully produced in all doping ranges by vacuum hot pressing using as-milled powders without subsequent annealing. Thermoelectric properties as functions of temperature and Sb contents were evaluated for the hot pressed specimens. Sb doping up to x=0.04 in $ZrNiSn_{1-x}Sb_x$ was shown to be effective on thermoelectric properties and the figure of merit (ZT) was shown to reach to the maximum at x=0.02 in this study.

• Transactions of the Korean hydrogen and new energy society
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• v.17 no.3
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• pp.324-330
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• 2006

In this study, carbothermal reduction method was employed to synthesis Sn-Sb alloy powders from chief metal oxides with ultrafine sizes. The Sn-Sb powders consisting of ultrafine particles were formed at $800{\sim}900^{\circ}C$ by reduction of oxides. Those powders have high initial discharge capacities ($570{\sim}637\;mAh/g$) and discharge capacities of those powders maintain initial capacity after 20 cycle due to existence of ultrafine particles in powders and alloying effect of Sn-Sb.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.28 no.5
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• pp.191-198
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• 2018

SnSb alloy powders with excess Sn or Sb are fabricated by the high energy ball-milling of pure Sn and Sb powders with different Sn/Sb molar ratios, and then their material properties and lithium electrochemical performances are investigated. It is revealed by X-ray diffraction that SnSb alloys are successfully synthesized, and the powder size is decreased via ball-milling. Charge-discharge test using a coin-cell shows that the best result, in terms of the cyclability and the capacity after 50 cycles, comes from the electrode composed of Sn : Sb = 4 : 6, i.e. the capacity of $580mAh\;g^{-1}$ after 50 cycles. When the electrode is composed of Sn : Sb = 3 : 7, however, the capacity is noticeably decreased by the restrained Sn reaction with Li-ion. The pure SnSb alloy powders (Sn : Sb = 5 : 5) results in the second best performance. In the case of Sn-rich SnSb alloys, the initial capacity is relatively high, but the capacity is quickly fading after 20 cycles.

• Proceedings of the Korean Powder Metallurgy Institute Conference
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• 2006.09b
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• pp.1223-1224
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• 2006

The p-type $(Bi_{0.2}Sb_{0.8})_2Te_3/(Pb_{0.7}Sn_{0.3})$Te functional gradient material (FGM) was fabricated by hot-pressing the mechanically alloyed $(Bi_{0.2}Sb_{0.8})_2Te_3$ and the 0.5 at% $Na_2Te-doped$ $(Pb_{0.7}Sn_{0.3})Te$ powders. Also, the n-type $Bi_2(Te_{0.9}Se_{0.1})_3/PbTe$ FGM was processed by hot-pressing the mechanically alloyed $Bi_2(Te_{0.9}Se_{0.1})_3$ and the 0.3 wt% Bi-doped PbTe powders. With ${\Delta}T$ larger than $300^{\circ}C$, the p-type $(Bi_{0.2}Sb_{0.8})_2Te_3/(Pb_{0.7}Sn_{0.3})Te$ FGM exhibited larger thermoelectric output power than those of the $(Bi_{0.2}Sb_{0.8})_2Te_3$ and the 0.5 at% $Na_2Te-doped$ $(Pb_{0.7}Sn_{0.3})Te$ alloys. For the n-type $Bi_2(Te_{0.9}Se_{0.1})_3/PbTe$ FGM, the thermoelectric output power superior to those of the $Bi_2(Te_{0.9}Se_{0.1})_3$ and the 0.3 wt% Bi-doped PbTe was predicted at ${\Delta}T$ larger than $300^{\circ}C$.

• Journal of Powder Materials
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• v.25 no.1
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• pp.54-59
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• 2018

Sb-doped $SnO_2$ (ATO) transparent conducting films are fabricated using horizontal ultrasonic spray pyrolysis deposition (HUSPD) to form uniform and compact film structures with homogeneously supplied precursor solution. To optimize the molar concentration and transparent conducting performance of the ATO films using HUSPD, we use precursor solutions of 0.15, 0.20, 0.25, and 0.30 M. As the molar concentration increases, the resultant ATO films exhibit more compact surface structures because of the larger crystallite sizes and higher ATO crystallinity because of the greater thickness from the accelerated growth of ATO. Thus, the ATO films prepared at 0.25 M have the best transparent conducting performance ($12.60{\pm}0.21{\Omega}/{\square}$ sheet resistance and 80.83% optical transmittance) and the highest figure-of-merit value ($9.44{\pm}0.17{\times}10^{-3}{\Omega}^{-1}$). The improvement in transparent conducting performance is attributed to the enhanced carrier concentration by the improved ATO crystallinity and Hall mobility with the compact surface structure and preferred (211) orientation, ascribed to the accelerated growth of ATO at the optimized molar concentration. Therefore, ATO films fabricated using HUSPD are transparent conducting film candidates for optoelectronic devices.

• Journal of the Korean Ceramic Society
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• v.12 no.1
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• pp.5-11
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• 1975

Thick film resistor paste was made utilizing oxide materials such as SnO, SnO＋Sb2O3, and SnO＋Zn. The oxide materials were mixed respectively with Q-12 glass powder and finally suspended in ethyl cellulose dissolved in ethyl cellosolve. Thick film resistor was made by screen printing the paste on the alumina substrate and firing it at a suitable temperature. Among thick films made from the resistor paste, the thick film containing 85% SnO and fired at $600^{\circ}C$ demonstrated the finest electrical properties showing 10 K ohm in sheet resistance, 110 ppm/$^{\circ}C$ in TCR. In general, TCR of the thick films made from the oxide-mixture paste is good in linearity, therefore it is suggested the oxide-mixture paste is utilized as the negative thermistor.

• Journal of the Korean Ceramic Society
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• v.33 no.4
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• pp.441-447
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• 1996

Sb doped SnO2(ATO:Antinomy doped Tin Oxide) thin films were prepared by a DC magnetron spttuering method using oxide target and the deposition characteristics were investigated. The experimental conditions are as follows :Ar flow rate : 100 sccm oxygen flow rates ; 0-100 sccm deposition temperature ; 250 -40$0^{\circ}C$ DC sputter powder ; 150~550 W and sputtering pressure ; ; 2~7 mTorr. Deposition rate greatly depends not on the deposition temperature but on the reaction pressure oxygen flow rate and sputter power,. when the sputter powder is low ATO thin films with (110) preferred orientation are deposited. And when the sputter power is high (110) prefered orientation appeares with decreasing of oxygen flow rate and increasing of suputte-ring pressure.

• Journal of the Korean Ceramic Society
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• v.33 no.5
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• pp.514-518
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• 1996

Sb doped SnO2(ATO: Antinomy doped Tin Oxide) thin films were prepared by a DC magnetron spttuering method using an oxide target and the electrical characteristics of ATO films were investigated. The experimen-tal conditions are as follows :Ar flow rate ; 0~100 sccm deposition tempera-ture ; 250~40$0^{\circ}C$ DC sputter powder ; 150~550W and sputteing pressure ; 2~7 mTorr, The thickness of depositied ATO films were 600$\AA$~1100 $\AA$ ranges. The resistivity of ATO films was decreased due to the increase of the crystallinity of ATO films with deposition temperature. The decrease of carrier concentration of films with the increase of oxygen flow rate and working pressure is responsible for the increase of resistivity. Increasing of sputtering power raised the resistivity of films by decreasing the carrier mobility.

• Nuclear Engineering and Technology
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• v.51 no.8
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• pp.2042-2049
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• 2019

Ten gizzard and three flesh samples of the broiler were collected from different locations in Tehsil Gujar Khan District Rawalpindi, Pakistan. The samples were dried, crushed and ground. Pellets were prepared by pressing the powder of the samples and that of the Bovine liver 1577c reference material obtained from NIST, USA. Proton induced X-ray emission (PIXE) installed at National Center for Physics, Islamabad, Pakistan has been used as a reliable and improved technique to determine concentration of various major/trace and toxic elements e.g. S, Cl, K, Ca, Cl, Fe, Cu, Mn, Co, Zn, Ti, Cd, Ga, Cr, V and Ni, in the Gizzard and Flesh samples of the broiler. The concentrations of all the detected elements in the samples are statistically significant. The certified and measured values of the elements in the reference material were in agreement with each other within a deviation of 7%. S, Cl, K and Ca are within tolerable limits and are good for human consumption. Ti, V, Cr, Mn, Fe, Co, Ni, Cu and Zn were more than the acceptable limits of World Health Organization, WHO whereas Ga, As, Sn, Sb and Pb are not detected in most of the samples.