• 대한전자공학회논문지
• /
• 제13권6호
• /
• pp.16-19
• /
• 1976

InSb-Sn 박막 Hall소자를 InSb-Sn분말을 flash흡착법으로 슬라이드 글래스 위에 흡착하여 만들었다. 이 소자를 자속계로 사용할 때 특성이 재현성이 좋고 직선성이 양호하였다. InSb-Sn thin film Hall device Was drepared by flash evaporation of InSb-Sn powder on the Slide qlass. The Characteristics Curve of this device showcd good linearity and reproducibility.

• 한국분말재료학회지
• /
• 제18권5호
• /
• pp.401-405
• /
• 2011

Half-heusler phase ZrNiSn is one of the potential thermoelectric materials for high temperature application. In an attempt to investigate the effect of Sb doping on thermoelectric properties, half-heusler phase $ZrNiSn_{1-x}Sb_x$ ($0{\leq}x{\leq}0.08$) was synthesized by mechanical alloying of stoichiometric elemental powder compositions, and consolidated by vacuum hot pressing. Phase transformations during mechanical alloying and hot consolidation were investigated using XRD. Sb doped ZrNiSn was successfully produced in all doping ranges by vacuum hot pressing using as-milled powders without subsequent annealing. Thermoelectric properties as functions of temperature and Sb contents were evaluated for the hot pressed specimens. Sb doping up to x=0.04 in $ZrNiSn_{1-x}Sb_x$ was shown to be effective on thermoelectric properties and the figure of merit (ZT) was shown to reach to the maximum at x=0.02 in this study.

• 한국수소및신에너지학회논문집
• /
• 제17권3호
• /
• pp.324-330
• /
• 2006

In this study, carbothermal reduction method was employed to synthesis Sn-Sb alloy powders from chief metal oxides with ultrafine sizes. The Sn-Sb powders consisting of ultrafine particles were formed at $800{\sim}900^{\circ}C$ by reduction of oxides. Those powders have high initial discharge capacities ($570{\sim}637\;mAh/g$) and discharge capacities of those powders maintain initial capacity after 20 cycle due to existence of ultrafine particles in powders and alloying effect of Sn-Sb.

• 한국결정성장학회지
• /
• 제28권5호
• /
• pp.191-198
• /
• 2018

알곤 분위기 하에서 다양한 몰 비의 Sn과 Sb 혼합분말에 대한 고에너지 볼밀을 시행하여 잔류 Sn, Sb 입자를 지닌 SnSb 합금결정상을 가지는 분말을 제조한 후, 그 소재적 특성과 리튬전기화학적 거동을 조사하였다. 시작 분말 내 Sn, Sb의 양 조절을 통해 잔류 Sn, Sb 상을 지닌 SnSb의 합금분말의 합성과 볼밀링에 의한 입자크기의 감소가 X-선 회절 분석과 입도 분석에 의해 확인되었다. Li 금속을 상대전극으로 하여 합성된 SnSb 합금분말에 대한 Li 이온의 충방전 실험 결과, 시작 분말에서 Sn과 Sb의 몰 비를 4:6으로 하여 소량의 잔류 Sb를 지닌 SnSb 합금분말에서 가장 좋은 사이클 특성을 보여, $40mA\;g^{-1}$의 정전류 하에서 50회 충방전 후 $580mAh\;g^{-1}$의 용량을 보였으며, SnSb 합금상만을 가진 분말이 다음으로 좋은 충방전 특성을 보였다. 그러나 Sn : Sb = 3 : 7 합금분말에서는 Sn과 Li-ion의 반응이 억제되어 낮은 용량을 보였다. 잔류 Sn 상이 포함된 SnSb 합금 분말은 초기의 높은 용량을 지속하지 못하고 20회 이상의 충방전 시 급격한 용량 감소를 보였다.

• 한국분말야금학회:학술대회논문집
• /
• 한국분말야금학회 2006년도 Extended Abstracts of 2006 POWDER METALLURGY World Congress Part2
• /
• pp.1223-1224
• /
• 2006

The p-type $(Bi_{0.2}Sb_{0.8})_2Te_3/(Pb_{0.7}Sn_{0.3})$Te functional gradient material (FGM) was fabricated by hot-pressing the mechanically alloyed $(Bi_{0.2}Sb_{0.8})_2Te_3$ and the 0.5 at% $Na_2Te-doped$ $(Pb_{0.7}Sn_{0.3})Te$ powders. Also, the n-type $Bi_2(Te_{0.9}Se_{0.1})_3/PbTe$ FGM was processed by hot-pressing the mechanically alloyed $Bi_2(Te_{0.9}Se_{0.1})_3$ and the 0.3 wt% Bi-doped PbTe powders. With ${\Delta}T$ larger than $300^{\circ}C$, the p-type $(Bi_{0.2}Sb_{0.8})_2Te_3/(Pb_{0.7}Sn_{0.3})Te$ FGM exhibited larger thermoelectric output power than those of the $(Bi_{0.2}Sb_{0.8})_2Te_3$ and the 0.5 at% $Na_2Te-doped$ $(Pb_{0.7}Sn_{0.3})Te$ alloys. For the n-type $Bi_2(Te_{0.9}Se_{0.1})_3/PbTe$ FGM, the thermoelectric output power superior to those of the $Bi_2(Te_{0.9}Se_{0.1})_3$ and the 0.3 wt% Bi-doped PbTe was predicted at ${\Delta}T$ larger than $300^{\circ}C$.

• 한국분말재료학회지
• /
• 제25권1호
• /
• pp.54-59
• /
• 2018

Sb-doped $SnO_2$ (ATO) transparent conducting films are fabricated using horizontal ultrasonic spray pyrolysis deposition (HUSPD) to form uniform and compact film structures with homogeneously supplied precursor solution. To optimize the molar concentration and transparent conducting performance of the ATO films using HUSPD, we use precursor solutions of 0.15, 0.20, 0.25, and 0.30 M. As the molar concentration increases, the resultant ATO films exhibit more compact surface structures because of the larger crystallite sizes and higher ATO crystallinity because of the greater thickness from the accelerated growth of ATO. Thus, the ATO films prepared at 0.25 M have the best transparent conducting performance ($12.60{\pm}0.21{\Omega}/{\square}$ sheet resistance and 80.83% optical transmittance) and the highest figure-of-merit value ($9.44{\pm}0.17{\times}10^{-3}{\Omega}^{-1}$). The improvement in transparent conducting performance is attributed to the enhanced carrier concentration by the improved ATO crystallinity and Hall mobility with the compact surface structure and preferred (211) orientation, ascribed to the accelerated growth of ATO at the optimized molar concentration. Therefore, ATO films fabricated using HUSPD are transparent conducting film candidates for optoelectronic devices.

• 한국세라믹학회지
• /
• 제12권1호
• /
• pp.5-11
• /
• 1975

Thick film resistor paste was made utilizing oxide materials such as SnO, SnO＋Sb2O3, and SnO＋Zn. The oxide materials were mixed respectively with Q-12 glass powder and finally suspended in ethyl cellulose dissolved in ethyl cellosolve. Thick film resistor was made by screen printing the paste on the alumina substrate and firing it at a suitable temperature. Among thick films made from the resistor paste, the thick film containing 85% SnO and fired at $600^{\circ}C$ demonstrated the finest electrical properties showing 10 K ohm in sheet resistance, 110 ppm/$^{\circ}C$ in TCR. In general, TCR of the thick films made from the oxide-mixture paste is good in linearity, therefore it is suggested the oxide-mixture paste is utilized as the negative thermistor.

• 한국세라믹학회지
• /
• 제33권4호
• /
• pp.441-447
• /
• 1996

Sb doped SnO2(ATO:Antinomy doped Tin Oxide) thin films were prepared by a DC magnetron spttuering method using oxide target and the deposition characteristics were investigated. The experimental conditions are as follows :Ar flow rate : 100 sccm oxygen flow rates ; 0-100 sccm deposition temperature ; 250 -40$0^{\circ}C$ DC sputter powder ; 150~550 W and sputtering pressure ; ; 2~7 mTorr. Deposition rate greatly depends not on the deposition temperature but on the reaction pressure oxygen flow rate and sputter power,. when the sputter powder is low ATO thin films with (110) preferred orientation are deposited. And when the sputter power is high (110) prefered orientation appeares with decreasing of oxygen flow rate and increasing of suputte-ring pressure.

• 한국세라믹학회지
• /
• 제33권5호
• /
• pp.514-518
• /
• 1996

Sb doped SnO2(ATO: Antinomy doped Tin Oxide) thin films were prepared by a DC magnetron spttuering method using an oxide target and the electrical characteristics of ATO films were investigated. The experimen-tal conditions are as follows :Ar flow rate ; 0~100 sccm deposition tempera-ture ; 250~40$0^{\circ}C$ DC sputter powder ; 150~550W and sputteing pressure ; 2~7 mTorr, The thickness of depositied ATO films were 600$\AA$~1100 $\AA$ ranges. The resistivity of ATO films was decreased due to the increase of the crystallinity of ATO films with deposition temperature. The decrease of carrier concentration of films with the increase of oxygen flow rate and working pressure is responsible for the increase of resistivity. Increasing of sputtering power raised the resistivity of films by decreasing the carrier mobility.

• Nuclear Engineering and Technology
• /
• 제51권8호
• /
• pp.2042-2049
• /
• 2019

Ten gizzard and three flesh samples of the broiler were collected from different locations in Tehsil Gujar Khan District Rawalpindi, Pakistan. The samples were dried, crushed and ground. Pellets were prepared by pressing the powder of the samples and that of the Bovine liver 1577c reference material obtained from NIST, USA. Proton induced X-ray emission (PIXE) installed at National Center for Physics, Islamabad, Pakistan has been used as a reliable and improved technique to determine concentration of various major/trace and toxic elements e.g. S, Cl, K, Ca, Cl, Fe, Cu, Mn, Co, Zn, Ti, Cd, Ga, Cr, V and Ni, in the Gizzard and Flesh samples of the broiler. The concentrations of all the detected elements in the samples are statistically significant. The certified and measured values of the elements in the reference material were in agreement with each other within a deviation of 7%. S, Cl, K and Ca are within tolerable limits and are good for human consumption. Ti, V, Cr, Mn, Fe, Co, Ni, Cu and Zn were more than the acceptable limits of World Health Organization, WHO whereas Ga, As, Sn, Sb and Pb are not detected in most of the samples.