• Journal of the Korean Crystal Growth and Crystal Technology
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• v.29 no.6
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• pp.245-250
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• 2019

We investigated the post-annealing effect of Sn-incorporated β-Ga₂O₃ (β-Ga₂O₃ : Sn) nanowires (NWs) grown on sapphire (0001) substrates using radio-frequency powder sputtering. The β-Ga₂O₃ : Sn NWs were converted to a porous structure during the vacuum annealing process at 800℃. Host non-stoichiometric Ga₂O_3-x, is transformed into stoichiometric Ga₂O₃, where Sn atoms separate and form Sn nano-clusters that gradually evaporate in a vacuum atmosphere. As a result, the amount of Sn atoms was reduced from 1.31 to 0.27 at%. Pores formed on the sides of β-Ga₂O₃ : Sn NWs were observed. This increases the ratio of the surface to the volume of β-Ga₂O₃ : Sn NWs.