• Journal of Sensor Science and Technology
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• v.4 no.2
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• pp.37-44
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• 1995

A coprecipitation method was used for preparing Ca and Pt doped $SnO_{2}$-based material. Crystallite size and specific surface area were investigated by TEM, XRD and BET analysis. $SnO_{2}(Ca)/Pt$ based thick film devices were prepared by a screen printing technique for hydrocarbon gas detecting. Then the electrical and sensing characteristics of devices were investigated. As Ca and Pt addition, the crystal growth of $SnO_{2}$ was suppressed during calcining and sintering, and the sensitivity of $SnO_{2}(Ca)/Pt$ thick film to gas was enhanced. Also any difference in the sensing properties has to be attributed to the Pt and Au electrode. For the 2000 ppm $CH_{4}$, the sensitivity of $SnO_{2}(Ca)/Pt$ thick film devices were about 83% at an operating temperature of $400^{\circ}C$.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2006.05a
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• pp.27-30
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• 2006

In this paper, the undoped and Co-doped $Zn_4SnSe_6$ single crystals grown by the chemical transporting reaction(CTR) method using iodine as a transporting agent are investigated. For the crystal growth, the temperature gradient of the CTR furnace was kept at $680^{\circ}C$ for the source zone and at $780^{\circ}C$ for the growth zone for 7days. It was found from the analysis of x-ray diffraction that the $Zn_4SnSe_6$ and $Zn_4SnSe_6Co^{2+}$ compounds have a monoclinic structure. The direct optical energy band gap of the $Zn_4SnSe_6$ and $Zn_4SnSe_6Co^{2+}$ single crystals at 300K were found to be 2.146eV and 2.042eV.

• Solar Energy
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• v.18 no.2
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• pp.137-144
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• 1998

Tin oxide films deposited by spray pyrolysis have defects and preferred orientations according to the temperature of substrate. The growth of crystalline deposits began at the substrate temperature of $300^{\circ}C$. With increasing substrate temperature the plane (200) groved preferentially and above $400^{\circ}C$, planes of higher indices. Grain size increased with increasing substrate temperature up to $400^{\circ}C$. Undoped film is composed of Sn and O, and contains oxygen vacancies. Film doped with antimony has defects such as oxygen vacancies, antimony substituted on Sn and chlorine on oxygen.

• Korean Journal of Materials Research
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• v.24 no.9
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• pp.469-473
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• 2014

$SrSnO_3$ phosphor powders were synthesized with two different contents of activator ions $Eu^{3+}$ and $Tb^{3+}$ using the solid-state reaction method. The structural, morphological, and optical properties of the phosphors were investigated using X-ray diffractometry, field-emission scanning electron microscopy, and fluorescence spectrophotometry, respectively. All the phosphors showed a cubic structure, irrespective of the type and the content ratio of activator ions. For $Eu^{3+}$-doped $SrSnO_3$ phosphors, the intensity of the 620 nm red emission spectrum resulting from the $^5D_0{\rightarrow}^7F_2$ transition of $Eu^{3+}$ was stronger than that of the 595 nm orange emission signal due to the $^5D_0{\rightarrow}^7F_1$ transition in the range 0.01-0.05 mol of $Eu^{3+}$, but the ratio of the intensity was reversed in the range 0.10-0.20 mol of $Eu^{3+}$. The variation in the emission intensity indicates that the site symmetry of the $Eu^{3+}$ ions around the host crystal was changed from non-inversion symmetry to inversion. For the $Tb^{3+}$-doped $SrSnO_3$ phosphors under excitation at 281 nm, one strong green emission band at 550 nm and several weak bands were observed. These results suggest that the optimum red and green emission signals can be realized when the activator ion content for $Eu^{3+}$- or $Tb^{3+}$-doped $SrSnO_3$ phosphors is 0.20 mol and 0.15 mol, respectively.

• The Korean Journal of Ceramics
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• v.2 no.2
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• pp.83-88
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• 1996

Long term stability, sensitization in air, and gas sensing behaviors of tin oxide films were investigated with doping of antimony and palladium. The tin oxide films were prepared on a Corning glass by reactive rf sputtering method and tested for detection of hydrogen gas. Sb-doping improved a long-term stability in the base resistance of $SnO_2$ film sensor. A small amount of Pd doping caused the optimum sensor operating temperature to reduce and also enhanced the gas sensitivity, compared with the undoped $SnO_2$ film. Gas sensitivity depended largely on the film thickness. The important sensitization reactions for sensor operating were $(O_{2ads})+e^-\;{\rightarrow}\;2(O_{ads})^-$ on the surface of $SnO_2$ film at elevated temperature in air and a followed reaction of hydrogen atoms with $(O_{ads})^-$ ions.

• Bulletin of the Korean Chemical Society
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• v.35 no.3
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• pp.913-918
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• 2014

Five mol % tungsten-doped tin oxide ($W_{0.05}Sn_{0.95}O_2$, TTO5) was prepared by co-precipitation of $SnCl_4{\cdot}5H_2O$ and $WCl_4$, followed by calcination at $1000^{\circ}C$. The as-prepared TTO5 was in the pure cassiterite phase with a particle size of ~50 nm and optical bandgap of 2.51 eV. Herein it was applied for the formation of TTO5/$TiO_2$ heterojunctions by covering the TTO5 surface with $TiO_2$ by sol-gel method. Under visible-light irradiation (${\lambda}{\geq}420$ nm), TTO5/$TiO_2$ showed a significantly high photocatalytic activity in removing gaseous 2-propanol (IP) and evolving $CO_2$. It is deduced that its high visible-light activity is caused by inter-semiconductor holetransfer between the valence band (VB) of TTO5 and $TiO_2$, since the TTO5 nanoparticle (NP) exhibits the absorption edge at ~450 nm and its VB level is located more positive side than that of $TiO_2$. The evidence for the hole-transport mechanism between TTO5 and $TiO_2$ was also investigated by monitoring the holescavenging reaction with 1,4-terephthalic acid (TA).

• Proceedings of the Korean Ceranic Society Conference
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• 2003.10a
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• pp.190.2-190
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• 2003

• Journal of the Korean institute of surface engineering
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• v.29 no.5
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• pp.519-524
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• 1996

We synthesized semiconducting Sn-doped diamondlike carbon films by rf plasma-enhanced chemical vapor deposition using an organotin compound as a dopung gas source. XPS quan-titative analysis for the deposited films after 60 s argon ion etching revealed that Sn concen-tration increased with the partial pressure of the organotin compound in the reactant gas. In C 1s spectra, there was a component due to C-Su bond which had a negative chemical shift. C 1s spectra also indicated that the deposited films were relatively $sp^2$ rich. The chemical shift of the Sn-C bond in Sn $3d_{5/2}$ spectra was about +1.7 eV. The electrical resistivity and the optical transmittance were also investigated.

• Proceedings of the Korean Vacuum Society Conference
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• 2013.02a
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• pp.688-688
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• 2013

Al-doped ZnO (AZO) thin films have attracted a lot of attention as a cheap transparent conducting oxide (TCO) material that can replace the expensive Sn-doped In2O3. In particular, AZO thin films are widely used as a window layer of chalcogenide-based thin film solar cells such as Cu(In,Ga)Se2 and Cu2ZnSnS4 (CZTS). Mostly important requirements for the window layer material of the thin film solar cells are the high transparency and the low sheet resistance, because they influence the light absorption by the activelayer and the electron collection from the active layer, respectively. In this study, we prepared the AZO thin films by RF magnetron sputtering using a ZnO/Al2O3 (98：2wt%) ceramic target, and the effect of the sputtering condition such as the working pressure, RF power, and the working distance on the optical, electrical, and crystallographic properties of the AZO thin films was investigated. The AZO thin films with optimized properties were used as a window layer of CZTS thin film solar cells. The CZTS active layers were prepared by the electrochemical deposition and the subsequent sulfurization process, which is also one of the cost-effective synthetic approaches. In addition, the solar cell properties of the CZTS thin film solar cells, such as the photocurrent density-voltage (J-V) characteristics and the external quantum efficiency (EQE) were investigated.

• Journal of the Korean Ceramic Society
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• v.37 no.7
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• pp.686-692
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• 2000

Tin-doped In2O3 (ITO) films were fabricated using a d.c. magnetron reactive sputteirng of a In-10 wt% Sn alloy target in an Ar and O2 gas mixture. To understand the behavior of the carrier mobility in ITO films with O2 partial pressure, the resistivity, carrier concentration and mobility, film density, and intrinsic stress in the films were measured with O2 partial pressure. It was found experimentally that the carrier mobility increased rapidly as the film density increased. In the ITO film with the density close to theoretical one, the mean free path was the same as the columnar diameter. This indicated that the mobility in ITO films was strongly influenced by the crystall size. However, in the case where the film density was smaller than a theoretical density, the mean free paths were also smaller the columnar diameter. It was analyzed that the electron scattering at pores and holes within the crystalline was the major obstacle for electron conduction in ITO films. The measurement of intrinsic stress in ITO films also made it clear that the density of ITO films was controlled by the bombardment of oxygen neutrals on the growing film.