• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2007.11a
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• pp.336-337
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• 2007

현재 투명전극의 재료로 ITO, ZnO, $SnO_2$등의 재료가 주로 이용되며, 낮은 저항률을 장점으로 가지는 ITO 박막이 가장 널리 이용되고 있으나, 가격이 비싸다는 단점을 가지고 있다. 이 밖에도 ITO 박막보다 가격이 저렴한 ZnO박막에 대한 연구가 많이 진행되고 있으나, 고온에서의 열적 불안정성 등의 문제로 상용화되지는 못하고 있다. 그러나 $SnO_2$ 박막은 ITO와 ZnO 박막보다 저항률이 다소 높지만, 우수한 열적, 화학적 안정성과 저렴한 가격으로 ITO 박막을 대체할 투명전도막 재료로 주목받고 있다. 본 연구에서는 $SnO_2$박막의 저항률 향상을 위하여 ATO(Antimony doped Tin Oxide) 박막을 RF Magnetron Sputtering 법으로 Coming glass위에 증착하였으며, 박막 증착시 산소 유량의 변화가 ATO 박막의 구조적, 전기적 그리고 광학적 특성에 미치는 효과를 연구하였다. 본 실험에서는 동작압력을 10 mTorr, RF power를 250W로 고정하고 $O_2$ 유량을 부분적으로 변화시키면서 증착되어진 ATO 박막을 분석한 결과 Ar:$O_2$의 비가 90:10일 때 최적의 가스비율로써 우수한 구조적, 전기적 그리고 광학적 특성을 보임을 확인하였다.

• Transactions on Electrical and Electronic Materials
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• v.6 no.3
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• pp.119-123
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• 2005

$0.10Pb(Sb_{1/2}Sn_{1/2})O_3-0.25PbTiO_3-0.65PbZrO_3$ specimens doped with $ MnO_2\;(0.18\;mol\%)$ and $Y_2O_3\;(0\~0.4\;wt\%)$ were fabricated by the mixed-oxide method. All specimens showed the typical XRD patterns of a perovskite polycrystalline structure and the lattice constant decreased with increasing amount of $Y_2O_3$. The relative dielectric constant and the dielectric loss of the specimens doped with $0.2\;wt\%\;Y_2O_3$ were 704 and 0.0201, respectively. The remanent polarization, the coercive field and the pyroelectric coefficient of the specimen doped with $0.2\;wt\%\;Y_2O_3$ were $10.88\times10^{-2}Cm^{-2},\;11.12\times10^2kVm^{-1}$ and $5.03\times10^{-4}Cm^{-2}K^{-1}$ at $25^{\circ}C$, respectively. The figures of merit, $F_V$ for the voltage responsivity and $F_D$ for the specific detectivity, of the specimen doped with $0.2\;wt\%\;Y_2O_3$ were the good values of $3.04\times10^{-2}\;m^2C^{-1}\;and\;1.50\times10^{-5}\;Pa^{-1/2}$, respectively.

• Proceedings of the Korean Institute of Surface Engineering Conference
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• 2008.11a
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• pp.91-91
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• 2008

다양한 증착 조건에서 DC 마그네트론 스퍼터링법을 이용하여 플라스틱 기판위에 $SnO_2$가 5, 7, 10wt% 도핑된 고밀도 ITO타겟으로 증착한 ITO박막의 기계적, 전기적 특성을 연구하였다. $SnO_2$가 7wt% 도핑된 ITO타겟으로 증착한 박막에서 $3.19{\times}10^{-4}{\Omega}cm$의 가장 낮은 비저항 값을 관찰할 수 있었고, 기계적 내구성 또한 가장 우수하였다.

• Proceedings of the Korean Vacuum Society Conference
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• 2013.02a
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• pp.336-336
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• 2013

Zinc oxide (ZnO) based transparent oxide semiconductors have been studied due to their high transmittance and electrical conductivity. Pure ZnO have unstable optical and electrical properties at high temperatures but doped ZnO thin films can have stable optical and electrical properties. In this paper, transparent oxide semiconductors of Y-doped ZnO thin films prepared by sol-gel method. The ionic radius of $Y^{3+}$ (0.90 A) is close to that of $Zn^{2+}$ (0.74 A), which makes Y suitable dopant for ZnO thin films. The Sn-doped ZnO thin films were deposited onto quartz substrates with different atomic percentages of dopant which were Y/Zn = 0, 1, 2, 3, 4, and 5 at.%. These thin films were pre-heated at $150^{\circ}C$ for 10 min and then annealed at $500^{\circ}C$ or 1 h. The structural and optical properties of the Y-doped ZnO thin films were investigated using field-emission scanning electronmicroscopy (FE-SEM), X-ray diffraction (XRD), UV-visible spectroscopy, and photoluminescence (PL).

• The Korean Journal of Ceramics
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• v.2 no.3
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• pp.162-166
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• 1996

The effects of NiO addition on the microstructure and microwave dielectric properties of ($Zr_{08}Sn_{02}$)$TiO_4$ (ZST) were investigated. With the NiO addition, a higher density of ZST ceramics than 95% of the theoretical values has been obtained in the sintering temperature range of 1400 to 150$0^{\circ}C$. Energy dispersive X-ray spectrometry (EDS) analysis of sintered specimen shows the presence of second phase at grain boundaries, which is considered to be $NiTiO_3$. Dielectric constant of the specimen is found to increase linearly with density. Q-values and TC$_r$ decrease with increasing NiO content. The variation of dielectric properties with NiO content is discussed in terms of the second phase. The ZST ceramics with 0.25 wt% NiO showed ${\varepsilon}_{\gamma}$=38, Q=7000 at GHz and TC$\gamma$=-0.5 ppm/$^{\circ}C$, comparable with the values obtained by the previous investigations.

• Journal of the Korea Institute of Information and Communication Engineering
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• v.6 no.2
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• pp.315-322
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• 2002

A thin film oxide semiconductor micro gas sensor array which shows only 60㎽ of power consumption at an operating temperature of 30$0^{\circ}C$ has been fabricated using microfabrication and rnicrornachining techniques. Excellent thermal insulation of the membrane is achieved by the use of a double la! or structure of 0.1${\mu}{\textrm}{m}$ thick Si$_3$N$_4$ and 1${\mu}{\textrm}{m}$ thick phosphosilicate glass(PSG) prepared by low pressure chemical vapor deposition(LPCVD) and atmospheric－pressure chemical-vapor deposition(APCVD), respectively. The sensor way consists of such thin film oxide semiconductor sensing materials as 1wt.％ Pd-doped SnO$_2$, 6wt.% AI$_2$O$_3$-doped ZnO, WO$_3$ and ZnO. The thin film oxide semiconductor micro gas sensor array exhibited resistance changes usable for subsequent data processing upon exposure to various gases and the sensitivity strongly depended on the sensing layer materials. Heater Part of the sensor structure has been modified in order to improve the process yield of the sensor, and as a result of modified heater structure improved process yield has been achieved.

• Proceedings of the Materials Research Society of Korea Conference
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• 2007.11a
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• pp.43.2-43.2
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• 2007

• Journal of the Korea Institute of Information and Communication Engineering
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• v.4 no.3
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• pp.705-711
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• 2000

A thin film oxide semiconductor micro gas sensor array which shows only 60 mW of power consumption at an operating temperature of $300^{\circ}C$ has been fabricated using microfabrication and micromachining techniques. Excellent thermal insulation of the membrane is achieved by the use of a double-layer structure of $0.1\mum\; thick\; Si_3N_4 \;and\; 1 \mum$ thick phosphosilicate glass (PSG) prepared by low-pressure chemical-vapor deposition (LPCVD) and atmospheric-pressure chemical-vapor deposition (APCVD), respectively. The sensor array consists of such thin film oxide semiconductor sensing materials as 1 wt.% Pd-doped $SnO_2,\; 6 wt.% A1_2O_3-doped\; ZnO,\; WO_3$/ and ZnO. Baseline resistances of the four sensing materials were found to be stable after the aging for three days at $300^{\circ}C$. The thin film oxide semiconductor micro gas sensor array exhibited resistance changes usable for subsequent data processing upon exposure to various gases and the sensitivity strongly depended on the sensing layer materials.

• Journal of the Korean Ceramic Society
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• v.39 no.4
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• pp.394-400
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• 2002

Tin oxide thin films doped with silicon as anodes for lithium secondary battery were fabricated by R. F. magnetron sputtering technique. The electrochemical results for lithium secondary battery anodes showed that addition of silicon decreases the oxidic state of tin, and, hence, reduced the irreversible capacity during the first discharge/charge cycle. The (110),(101),(211) planes were grown with increasing substrate temperatures. The reversible capacity of thin films fabricated in conditions of $300^{\circ}C$ substrate temperature and 7:3 $Ar:O_2$ ratio was 700 mAh/g.

• Journal of the Korean Ceramic Society
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• v.48 no.4
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• pp.298-302
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• 2011

This study developed a pigment by doping Cr to Pyrochlore-type stannate crystals and investigated the chromogenic relationship in a glaze. Crystal phases of the pigment according to firing temperatures were analyzed by XRD, and the doping relationship was analyzed by Raman Spectroscopy. Color and reflection rate of the pigment were measured by UV-vis Spectrophotometer. Consequently, stannate characteristic band appeared at 307, 408, 505 and $755cm^{-1}$ until 0.1 mole substitution of $Cr_2O_3$. However, as amount of $Cr_2O_3$ increased, the stannate characteristic peak was decreased and shift happened at the left hand side due to Cr-dope. In composition of 0.12~0.14 mole substituted, the unreacted $Cr_2O_3$ stannate characteristic peak, which was not engaged, was shown. This result shows the maximum limit of solid solution was 0.1 mole $Cr_2O_3$. The color of the glaze, which was produced by adding 6 wt% of $Y_2Sn_{1.94}Cr_{0.06}O_7$ pigment in a lime or a lime-magnesia glaze and fired the mixture at $1260^{\circ}C$, was grayish pink with $L^*$ 70.29, $a^*$ 5.68 and $b^*$ 6.27. It showed gray with $L^*$ 68.82, $a^*$ 3.07and $b^*$ 8.13 for $Y_2Sn_{1.9}Cr_{0.1}O_7$.