• Journal of the Korean Chemical Society
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• v.24 no.3
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• pp.183-192
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• 1980

Oxidation reactions of carbon monoxide on $SnO_2$, Sb-doped $SnO_2$, and Pt catalyst were studied. The oxidation reaction was found to be first order with respect to both CO and O$_2$ on $SnO_2$ and Sb-doped $SnO_2$ catalysts, and to be of half order on Pt catalyst. A small addition of Sb to $SnO_2$ (depant composition: 0.05∼0.1 mol %) increased the rate of oxidation. On the contrary, a large addition decreased the rate. From the rate expression of oxidation on Pt catalyst, the inhibition effect of carbon monoxide on the rate of oxidation was deduced. The experimentally obtained activatio energies were 5.7 kcal for the Sb doped $SnO_2$ catalyst (dopant composion: 0.05 mole%), and 6.4 kcal for the Pt catalyst. A possible reaction mechanism was proposed from the experimentally obtained kinetic data.

• Korean Journal of Materials Research
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• v.34 no.3
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• pp.170-174
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• 2024

In this study, we report the microstructural evolution and shear strength of an Sn-Sb alloy, used for die attach process as a solder layer of backside metal (BSM). The Sb content in the binary system was less than 1 at%. A chip with the Sn-Sb BSM was attached to a Ag plated Cu lead frame. The microstructure evolution was investigated after die bonding at 330 ℃, die bonding and isothermal heat treatment at 330 ℃ for 5 min and wire bonding at 260 ℃, respectively. At the interface between the chip and lead frame, Ni₃Sn₄ and Ag₃Sn intermetallic compounds (IMCs) layers and pure Sn regions were confirmed after die bonding. When the isothermal heat treatment is conducted, pure Sn regions disappear at the interface because the Sn is consumed to form Ni₃Sn₄ and Ag₃Sn IMCs. After the wire bonding process, the interface is composed of Ni₃Sn₄, Ag₃Sn and (Ag,Cu)₃Sn IMCs. The Sn-Sb BSM had a high maximum shear strength of 78.2 MPa, which is higher than the required specification of 6.2 MPa. In addition, it showed good wetting flow.

• Korean Journal of Materials Research
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• v.16 no.9
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• pp.529-532
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• 2006

Sn-filled $Co_8Sb_{24}$ skutterudites were synthesized by the encapsulated induction melting process. Single ${\delta}-phase$ was successfully obtained by subsequent annealing and confirmed by X-ray diffraction analysis. Temperature dependences of Seebeck coefficient, electrical resistivity and thermal conductivity were examined from 300 K to 700 K. The positive Seebeck coefficient confirmed the p-type conductivity of the Sn-filled $Co_8Sb_{24}$. Electrical resistivity increased with increasing temperature, which shows that the Sn-filled $Co_8Sb_{24}$ skutterudite is a highly degenerate semiconductor. Thermal conductivity was reduced by Sn-filling because the filler atoms acted as phonon scattering centers in the skutterudite lattice. Thermoelectric figure of merit was enhanced by Sn filling and its optimum filling content was considered to be $z{\leq}0.5$ in the $Sn_zCo_8Sb_{24}$ system.

• Proceedings of the Korean Environmental Sciences Society Conference
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• 2008.11a
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• pp.464-467
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• 2008

성능이 우수한 다성분계 전극을 개발하기 위하여 Pt, Ru, Sn, Sb 및 Gd의 5 종류 금속을 이용하여 1성분계 전극의 성능과 산화제 생성량 및 2성분계 전극의 성능과 산화제 생성 경향을 고찰하여 다음의 결과를 얻었다. 1. RhB 농도 감소는 Ru/Ti > Sb/Ti > Pt/Ti > Sn/Ti > Gd/Ti 전극의 순서로 나타났으나 단위 전력당 2분간 제거된 RhB 농도 감소는 Ru/Ti > Sb/Ti > Pt/Ti > Gd/Ti > Sn/Ti 전극의 순서로 나타났다. 생성된 산화제 농도는 ClO$_2$ > free Cl > H$_2$O$_2$ > O$_3$의 순서였으며 Gd/Ti 전극의 경우 산화제가 거의 생성되지 않는 것으로 나타났다. 모든 전극에서 OH 라디칼이 거의 생성되지 않는 것으로 나타났다. Ru/Ti와 Sb/Ti 전극의 높은 RhB 분해와 산화제 생성 농도는 정확하지는 않지만 상관관계가 있는 것으로 나타났다. 2. Ru계 2성분 전극(Ru-Gd/Ti, Ru-Pt/Ti, Ru-Sn/Ti 및 Ru-Sb/Ti)은 모두 1성분계 전극보다 RhB 분해성능이 높아지는 것으로 나타났으며, Ru계 2성분 전극 중 가장 성능이 우수하였던 전극은 Ru:Sn=9:1 전극으로 나타났다. Sn-Sb/Ti 전극은 Sn:Sb=1:9의 전극 성능이 우수한 것으로 나타났으나 Sb/Ti 전극과의 차이는 크지 않은 것으로 나타났다. Pt계 전극(Pt-Gd/Ti, Pt-Sn/Ti, Pt-Sb/Ti)은 대체로 두 성분 혼합에 따른 RhB 분해효과 상승은 없는 것으로 나타났다. 2성분계 전극 중 RhB 제거 성능이 가장 우수하였던 Ru:Sn=9:1 전극에서 4종류의 산화제 생성 농도가 높은 것으로 나타났다. Ru:Pt=9:1 전극은 RhB 분해 성능이 5 전극 중 가장 낮았으며, 산화제도 생성량이 가장 적은 것으로 나타났다. Ru-Sn/Ti 계 전극의 RhB 분해 성능과 산화제 생성 농도가 실험한 모든 1, 2성분계 전극에서 높은 것으로 나타나 향후 3, 4성분계 전극 제조시 이를 바탕으로 제조하고 다른 물질들은 보조재료로서 사용할 필요성이 있는 것으로 사료되었다.

• Journal of the Korean Ceramic Society
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• v.29 no.12
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• pp.990-996
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• 1992

Chemical vapor deposition of ATO from SnCl4-SbCl5-H2O gas mixture was investigated with thermodynamic and experimental analyses. Electrical conductivity of the ATO film was much improved under deposition conditions of low input-gas ratio, Psbcl5/Psbcl4. This increase of the conductivity was attributed to donor electrons produced mainly by the pentavalent Sb ions in SnO2 lattice. However high input-gas ratio conditions produced an ATO film consisting of a mixture of SnO2 and very fine Sb2O5 phase. It was found that the deterioration of electrical conductivity and optical transmission of the film was caused by the deposition of fine Sb2O5 phase in the SnO2 matrix.

• Journal of Korean Society on Water Environment
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• v.23 no.3
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• pp.377-384
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• 2007

This study has carried out a performance of dimensionally stable anode for the purpose of decolorization of Rhodamine B (RhB) in water. Seven kinds of 1, 2 and 3 component electrodes were prepared by plating and thermal deposition, which were coated by the oxides of Pt, Ru, Ir, Sn-Sb, Ir-Sn-Sb, Ru-Sn-Sb and Ru-Sn-Ti on Ti metal surface, respectively. Performance for RhB decolorization of the seven electrodes lay in: Ru-Sn-Ti/Ti ${\fallingdotseq}$ Ru-Sn-Sb/Ti > Ir-Sn-Sb/Ti > Sn-Sb/Ti > Ru/Ti > Ir/Ti > Pt/Ti. The effects of electrode area and distance, electrolyte type and concentration, current density and pH were investigated on the decolorization of RhB using Ru-Sn-Ti/Ti electrode. Decolorization of RhB was not influenced by electrode area and distance largely, however wattage was influenced by them. NaCl was superior to the decolorization of RhB than $Na_2SO_4$. Optimum NaCl dosage and current density were 0.5 g/L and $0.183A/cm^2$, respectively. The pH effect of decolorization of RhB was not significant within the range of 3-7.

• Journal of the Microelectronics and Packaging Society
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• v.12 no.1 s.34
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• pp.47-52
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• 2005

Worldwide movement for prohibition of Pb usage drives imminent implementation of Pb-free solders in microelectronic packaging industry. Reliability information of Pb-free solders has not been completely constructed yet. One of the potential reliability concerns of Pb-free solders is allotropic transformation of Sn known as tin pest. Volume increase during the formation of tin pest could deteriorate the reliability of solder joints. It was also reported that the addition of soluble elements (i.e. Pb, Bi, and Sb) into Sn can effectively suppress the tin pest. However, the mechanical properties of the tin pest resistant alloys have not been studied in detail. In this study, lap shear creep test was conducted with Sn and Sn-0.7Cu based solder alloys doped with minor amount of Bi or Sb. Shear strain rates of the alloy were generally higher than those of Sn-3.5Ag based alloys. Rupture strains and corresponding Monkman- Grant products were largest for Sn-0.5Bi alloy and smallest for Sn-0.7Cu-0.5Sb alloy. Rupture surface Sn-0.5Bi alloy showed highly elongated $\beta$-Sn globules necked to rupture by shear stresses, while elongation of $\beta$-Sn globules of Sn-0.7Cu-0.5Sb alloy was relatively smaller.

• Korean Journal of Materials Research
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• v.4 no.1
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• pp.97-106
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• 1994

The dependence of the electrical resistivity on the eutectic composition and growth rates was investigated in the unidirectionally solidified Sb-InSb and Sn-Bi eutectic alloy systems, which were generally classified into the groups of f-f and nf-f eutectic system. Sb-InSb alloys containing 26-34wt.% In and Sn-Bi alloys containing 53-65wt.%Bi were prepared in vacuum sealed in a silica tube, and then these were unidirectionally solidified. Electrical resistivity of the specimens prepared by cutting the crystal section in parallel with the transverse direction and by cutting in longitudinal direction was measured. As the growth rate increased, the Sb-InSb and Sn-Bi eutectic alloys showed that the resistivity of longitudinal to the growth direction was increased but that of transverse to the growth direction was decreased. In the case of Sb-InSb eutectic alloy, increas~ng the phase boundary area and decreasing the fiber directionallity caused to increase the $p \; \parallel$ , while increasing the phase boundary area increased the $p \; \\perp$ As expected, the eutectic microstructure could be analysed well in terms of electrical resistivity.

• Journal of the Korean Ceramic Society
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• v.29 no.4
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• pp.319-327
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• 1992

Sb-doped SnO2 films were formed on Corning glass 7059 substrate by chemical vapor deposition using simulataneous hydrolysis of SnCl4 and SbCl5. Fairly good transparent conducting film with a low resistivity of ~6$\times$10-4{{{{ OMEGA }}cm and high average optical transparency above ~85% in the range of visible light was obtained at the deposition condition of 50$0^{\circ}C$ and input-gas ratio, [Psbcl5/Psncl4] of 0.05. Film conductivity was improved without loosing optical transparency at light doping of Sb and found to be due to the increase of electron concentration. However, high doping of Sb into SnO2 film largely deteriorated conductivity, optical transparency and crystallinity of the film.

• Journal of Hydrogen and New Energy
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• v.17 no.3
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• pp.324-330
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• 2006

In this study, carbothermal reduction method was employed to synthesis Sn-Sb alloy powders from chief metal oxides with ultrafine sizes. The Sn-Sb powders consisting of ultrafine particles were formed at $800{\sim}900^{\circ}C$ by reduction of oxides. Those powders have high initial discharge capacities ($570{\sim}637\;mAh/g$) and discharge capacities of those powders maintain initial capacity after 20 cycle due to existence of ultrafine particles in powders and alloying effect of Sn-Sb.