• Title/Summary/Keyword: Sn-Ag-Cu

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Joining characteristics of BGA solder bump by induction heating (유도가열에 의한 BGA 솔더 범프의 접합특성에 관한 연구)

  • 방한서;박현후
    • Proceedings of the KWS Conference
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    • 2003.11a
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    • pp.86-88
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    • 2003
  • The characteristic of induction heating solder bump(solder ball: Sn-37Pb, Sn-3.5Ag, Sn-3.0Ag-0.5Cu) has analyzed in this paper. The initial condition of induction heating depends on the time and current. The shape of lead-free solder bump is better than lead solder. The shear strength of lead solder bump has decreased with aging time. The average of shear strength of solder bump is about 10N, 11N, and 11N respectively. The lead-free solder bump's shear strength is better than lead solder and varies irregularly with aging time.

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Warpage and Stress Simulation of Bonding Process-Induced Deformation for 3D Package Using TSV Technology (TSV 를 이용한 3 차원 적층 패키지의 본딩 공정에 의한 휨 현상 및 응력 해석)

  • Lee, Haeng-Soo;Kim, Kyoung-Ho;Choa, Sung-Hoon
    • Journal of the Korean Society for Precision Engineering
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    • v.29 no.5
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    • pp.563-571
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    • 2012
  • In 3D integration package using TSV technology, bonding is the core technology for stacking and interconnecting the chips or wafers. During bonding process, however, warpage and high stress are introduced, and will lead to the misalignment problem between two chips being bonded and failure of the chips. In this paper, a finite element approach is used to predict the warpages and stresses during the bonding process. In particular, in-plane deformation which directly affects the bonding misalignment is closely analyzed. Three types of bonding technology, which are Sn-Ag solder bonding, Cu-Cu direct bonding and SiO2 direct bonding, are compared. Numerical analysis indicates that warpage and stress are accumulated and become larger for each bonding step. In-plane deformation is much larger than out-of-plane deformation during bonding process. Cu-Cu bonding shows the largest warpage, while SiO2 direct bonding shows the smallest warpage. For stress, Sn-Ag solder bonding shows the largest stress, while Cu-Cu bonding shows the smallest. The stress is mainly concentrated at the interface between the via hole and silicon chip or via hole and bonding area. Misalignment induced during Cu-Cu and Sn-Ag solder bonding is equal to or larger than the size of via diameter, therefore should be reduced by lowering bonding temperature and proper selection of package materials.

Board Level Drop Simulations and Modal Analysis in the Flip Chips with Solder Balls of Sn-1.0Ag-0.5Cu Considering Underfill (언더필을 고려한 Sn-1.0Ag-0.5Cu 조성의 솔더볼을 갖는 플립칩에서의 보드레벨 낙하 및 진동해석)

  • Kim, Seong-Keol;Lim, Eun-Mo
    • Journal of the Korean Society of Manufacturing Technology Engineers
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    • v.21 no.2
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    • pp.225-231
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    • 2012
  • Drop simulations of the board level in the flip chips with solder joints have been highlighted for years, recently. Also, through the study on the life prediction of thermal fatigue in the flip chips considering underfill, its importance has been issued greatly. In this paper, dynamic analysis using the implicit method in the Finite Element Analysis (FEA) is carried out to assess the factors effecting on flip chips considering underfill. The design parameters are size and thickness of chip, and size, pitch and array of solder ball with composition of Sn1.0Ag0.5Cu. The board systems by JEDEC standard is modeled with various design parameter combinations, and through these simulations, maximum yield stress and strain at each chip are shown at the solder balls. Modal analysis is simulated to find out the relation between drop impact and vibration of the board system.

Dynamic Reliability of Board Level by Changing the Design Parameters of Flip Chips (플립칩의 매개변수 변화에 따른 보드레벨의 동적신뢰성평가)

  • Kim, Seong-Keol;Lim, Eun-Mo
    • Journal of the Korean Society of Manufacturing Technology Engineers
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    • v.20 no.5
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    • pp.559-563
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    • 2011
  • Drop impact reliability assessment of solder joints on the flip chip is one of the critical issues for micro system packaging. Our previous researches have been showing that new solder ball compositions of Sn-3.0Ag-0.5Cu has better mechanical reliability than Sn-1.0Ag-0.5Cu. In this paper, dynamic reliability analysis using Finite Element Analysis (FEA) is carried out to assess the factors affecting flip chip in drop simulation. The design parameters are size and thickness of chip, and size, pitch and array of solder ball with composition of Sn1.0Ag0.5Cu. The board systems by JEDEC standard including 15 chips, solder balls and PCB are modeled with various design parameter combinations, and through these simulations, maximum yield stress and strain at each chip are shown at the solder balls. It is found that larger chip size, smaller chip array, smaller ball diameter, larger pitch, and larger chip thickness have bad effect on maximum yield stress and strain at solder ball of each chip.

Flux residue effect on the electrochemical migration of Sn-3.0Ag-0.5Cu (Sn-3.0Ag-0.5Cu 솔더링에서 플럭스 잔사가 전기화학적 마이그레이션에 미치는 영향)

  • Bang, Jung-Hwan;Lee, Chang-Woo
    • Journal of Welding and Joining
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    • v.29 no.5
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    • pp.95-98
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    • 2011
  • Recently, there is a growing tendency that fine-pitch electronic devices are increased due to higher density and very large scale integration. Finer pitch printed circuit board(PCB) is to be decrease insulation resistance between circuit patterns and electrical components, which will induce to electrical short in electronic circuit by electrochemical migration when it exposes to long term in high temperature and high humidity. In this research, the effect of soldering flux acting as an electrical carrier between conductors on electrochemical migration was investigated. The PCB pad was coated with OSP finish. Sn3.0Ag0.5Cu solder paste was printed on the PCB circuit and then the coupon was treated by reflow process. Thereby, specimen for ion migration test was fabricated. Electrochemical migration test was conducted under the condition of DC 48 V, $85^{\circ}C$, and 85 % relative humidity. Their life time could be increased about 22% by means of removal of flux. The fundamentals and mechanism of electrochemical migration was discussed depending on the existence of flux residues after reflow process.

Thermo-mechanical reliability evaluation of flip chip package using a accelerated test (가속화 시험을 통한 플립칩 패키지의 열적 기계적 특성 평가)

  • Kim Dae-Gon;Ha Sang-Su;Kim Jong-Ung;Sin Yeong-Ui;Jeong Seung-Bu
    • Proceedings of the KWS Conference
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    • 2006.05a
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    • pp.21-23
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    • 2006
  • The microstructural investigation and thermo-mechanical reliability evaluation of the Sn-3.0Ag-0.5Cu solder bumped flip chip package were carried out during the thermal shock test of the package. In the initial reaction, the reaction product between the solder and Cu mini bump of chip side was Cu6Sn5 layer, while the two phases which were (Cu,Ni)6Sn5 and (Ni,Cu)3Sn4 were formed between the solder and Ni-P layer of the package side. The cracks were occurred at the corner solder joints after the thermal shocks of 400 cycles. The primary failure mechanism of the solder joints in this type of package was confirmed to be thermally activated solder fatigue failure.

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Retardation of Massive Spalling by Palladium Layer Addition to Surface Finish (팔라듐 표면처리를 통한 Massive Spalling 현상의 억제)

  • Lee, Dae-Hyun;Chung, Bo-Mook;Huh, Joo-Youl
    • Korean Journal of Metals and Materials
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    • v.48 no.11
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    • pp.1041-1046
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    • 2010
  • The reactions between a Sn-3.0Ag-0.5Cu solder alloy and electroless Ni/electroless Pd/immersion Au (ENEPIG) surface finishes with various Pd layer thicknesses (0, 0.05, 0.1, 0.2, $0.4{\mu}m$) were examined for the effect of the Pd layer on the massive spalling of the $(Cu,Ni)_6Sn_5$ layer during reflow at $235^{\circ}C$. The thin layer deposition of an electroless Pd (EP) between the electroless Ni ($7{\mu}m$) and immersion Au ($0.06{\mu}m$) plating on the Cu substrate significantly retarded the massive spalling of the $(Cu,Ni)_6Sn_5$ layer during reflow. Its retarding effect increased with an increasing EP layer thickness. When the EP layer was thin (${\leq}0.1{\mu}m$), the retardation of the massive spalling was attributed to a reduced growth rate of the $(Cu,Ni)_6Sn_5$ layer and thus to a lowered consumption rate of Cu in the bulk solder during reflow. However, when the EP layer was thick (${\geq}0.2{\mu}m$), the initially dissolved Pd atoms in the molten solder resettled as $(Pd,Ni)Sn_4$ precipitates near the solder/$(Cu,Ni)_6Sn_5$ interface with an increasing reflow time. Since the Pd resettlement requires a continuous Ni supply across the $(Cu,Ni)_6Sn_5$ layer from the Ni(P) substrate, it suppressed the formation of $(Ni,Cu)_3Sn_4$ at the $(Cu,Ni)_6Sn_5/Ni(P)$ interface and retarded the massive spalling of the $(Cu,Ni)_6Sn_5$ layer.

Joining properties and thermal cycling reliability of the Si die-attached joint with Zn-Sn-based high-temperature lead-free solders (Zn-Sn계 고온용 무연솔더를 이용한 Si다이접합부의 접합특성 및 열피로특성)

  • Kim, Seong-Jun;Kim, Keun-Soo;Suganuma, Katsuaki
    • Proceedings of the KWS Conference
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    • 2009.11a
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    • pp.72-72
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    • 2009
  • 전자부품의 내부접속 및 파워반도체의 다이본딩과 같은 1차실장에는 고온환경에서의 사용과 2차실장에서의 재용융방지를 위해 높은 액상선온도 및 고상선온도를 필요로 하여, Pb-5wt%Sn, Pb-2.5wt%Ag로 대표되는 납성분 85%이상의 고온솔더가 널리 사용되고 있다. 생태계와 인체에 대한 납의 유해성이 보고된 이래, 무연솔더에 대한 연구가 활발히 진행되어 왔으나, Sn-Ag-Cu계로 대표되는 Sn계 합금으로 대체 중인 중온용 솔더와는 달리, 고온용 솔더에 대해서는 대체합금에 대한 연구가 미흡한 실정이다. 대체재의 부재로 인해 기존의 납을 다량함유한 솔더로 1차실장이 지속됨으로서, 2차실장의 무연화에도 불구하고 전자부품 및 기기의 재활용에 큰 어려움을 겪고 있다. 지금까지 고온용 무연솔더로서는 융점에 근거해 Au-(Sn, Ge, Si)계, Bi-Ag계, Zn-(Al, Sn)계의 극히 제한된 합금계만이 보고되어 왔다. Au계 솔더는 현재 플럭스를 사용하지 않는 광학, 디스플레이 분야 등 고부가가치 공정에 사용되고 있으나, 합금가격이 매우 비싸며 가공성이 나빠 대체재료로서는 적합하지 않다. Bi-Ag계 솔더 또한 취성합금으로 와이어 및 박판으로 가공하는데 어려움이 크며, 솔더로서 중요한 특성중 하나인 전기전도도 및 열전도도가 나쁜 편이다. 이에 비해, Zn계 합금은 비교적 낮은 합금가격, 적절한 가공성과 뛰어난 인장강도, 우수한 전기전도도 및 열전도도를 지녀, 고온용솔더 대체재료의 유력한 후보로 생각된다.이전 연구에서, 필자의 연구그룹은 Zn-Sn계 합금을 고온용 무연솔더로서 제안한 바 있다. Zn-Sn계 합금은 충분히 높은 융점과 함께, 금속간화합물이 없는 미세조직, 우수한 기계적 특성, 높은 전기전도도 및 열전도도 등의 장점을 나타내었다. 본 연구에서는 기초합금특성상 고온솔더로서 다양한 장점을 지닌 Zn-30wt%Sn합금을 고온용 솔더의 대표적인 적용의 하나인 다이본딩에 적용하여, 접합부의 강도 및 미세조직, 열피로 신뢰성에 대해 분석을 함으로서 실제 공정에의 적용가능성에 대해 검토하였다. Zn-30wt%Sn을 이용해 Au/TiN(Titanium nitride) 코팅한 Si다이를 AlN-DBC(aluminum nitride-direct bonded copper)기판에 접합한 결과, 양측에 완전히 젖은 기공이 없는 양호한 다이접합부를 얻었으며, 솔더내부에는 금속간화합물을 형성하지 않았다. Si다이와의 계면에는 TiN만이 존재하였으며, Cu와의 계면에는 Cu로부터 $Cu_5Zn_8,\;CuZn_5$의 반응층을 형성하였다. 온도사이클시험을 통한 열피로특성평가에서, Zn-30wt%Sn를 이용한 다이접합부는 1500사이클 지점에서 Cu와 Cu-Zn금속간화합물의 사이에서 피로균열이 형성되며, 접합강도가 크게 감소하였다. 열피로특성 향상을 위해 Cu표면에 TiN코팅을 하여 Zn-30wt%Sn 솔더로 다이접합한 결과, Si다이와 기판 양측에 TiN만으로 구성된 계면을 형성하였으며, TEM관찰을 통해 Zn-30wt%Sn과 극히 미세한 접합계면이 형성하고 있음을 확인하였다. Zn-wt%30Sn솔더와 TiN층의 병용으로 2000사이클까지 미세조직의 변화 및 강도저하가 없는 극히 안정된 고신뢰성의 다이접합부를 얻을 수가 있었다.

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A Study on the Ball-off of Via Balls Bonded by Solder Paste (Solder Paste로 접합된 비아볼의 Ball-off에 관한 연구)

  • Kim, Kyoung-Su;Kim, Jin-Young
    • Journal of the Korean Institute of Electrical and Electronic Material Engineers
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    • v.17 no.6
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    • pp.575-579
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    • 2004
  • Package reliability test was conducted to investigate the effect of solder paste composition at BGA Package. It was found that the shape and size of the phase form are affected by the processing parameters. The material have used to fill in the via was Sn/36Pb/2Ag and Sn/0.75Cu type solder paste. Sn/36Pb/2Ag and Sn/0.75Cu paste were fabricated on Tape-BGA substrates by screen printing process, and via ball mount data were characterized with variations of dwell time of 85 seconds at reflow peak temperature at 22$0^{\circ}C$ or 24$0^{\circ}C$. The test condition was MRT 30 $^{\circ}C$/60 %RH/96 HR. Failures formed of a ball-off in solder paste process were observed by using a Optical Microscope and SEM(Scanning Electron Microscope). It was concluded that intermetallic layer growth played important roles in increasing solder fatigue strength for addition of Ag composition. The degradation of shear strength of solder composition is discussed.

Interfacial Reactions of Sn-Ag-Cu solder on Ni-xCu alloy UBMs (Ni-xCu 합금 UBM과 Sn-Ag계 솔더 간의 계면 반응 연구)

  • Han Hun;Yu Jin;Lee Taek Yeong
    • Proceedings of the International Microelectronics And Packaging Society Conference
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    • 2003.11a
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    • pp.84-87
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    • 2003
  • Since Pb-free solder alloys have been used extensively in microelectronic packaging industry, the interaction between UBM (Under Bump Metallurgy) and solder is a critical issue because IMC (Intermetallic Compound) at the interface is critical for the adhesion of mechanical and the electrical contact for flip chip bonding. IMC growth must be fast during the reflow process to form stable IMC. Too fast IMC growth, however, is undesirable because it causes the dewetting of UBM and the unstable mechanical stability of thick IMC. UP to now. Ni and Cu are the most popular UBMs because electroplating is lower cost process than thin film deposition in vacuum for Al/Ni(V)/Cu or phased Cr-Cu. The consumption rate and the growth rate of IMC on Ni are lower than those of Cu. In contrast, the wetting of solder bumps on Cu is better than Ni. In addition, the residual stress of Cu is lower than that of Ni. Therefore, the alloy of Cu and Ni could be used as optimum UBM with both advantages of Ni and Cu. In this paper, the interfacial reactions of Sn-3.5Ag-0.7Cu solder on Ni-xCu alloy UBMs were investigated. The UBMs of Ni-Cu alloy were made on Si wafer. Thin Cr film and Cu film were used as adhesion layer and electroplating seed layer, respectively. And then, the solderable layer, Ni-Cu alloy, was deposited on the seed layer by electroplating. The UBM consumption rate and intermetallic growth on Ni-Cu alloy were studied as a function of time and Cu contents. And the IMCs between solder and UBM were analyzed with SEM, EDS, and TEM.

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