• 마이크로전자및패키징학회지
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• 제19권4호
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• pp.57-64
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• 2012

표면처리에 따른 Sn-1.2Ag-0.7Cu-0.4In 솔더범프의 접합 강도 평가를 위하여 전단 속도 및 열처리 시간에 따른 볼 전단강도 시험을 실시하였다. 전반적으로, 전단속도가 증가함에 따라 전단강도는 증가하였지만 인성은 감소하는 경향을 나타내었다. 파괴모드 관찰 결과, 전단 속도가 증가함에 따라 파괴모드의 경우, ENIG(electroless nickel immersion gold) 처리는 취성파괴가 대부분 지배적으로 존재하였고, OSP(organic solderability preservative) 처리는 pad open이 주로 발생하였다. 또한, 500 mm/s의 고속전단시험에서는 열처리 시간이 증가함에 따라 표면처리별 전단강도와 인성 값 모두 감소하는 경향을 보였다. ENIG 표면처리가 OSP 표면처리 보다 좋은 접합강도 특성을 보이는 것은 솔더범프 계면의 금속간화합물의 물성 및 두께와 밀접한 연관이 있는 것으로 판단된다.

• Journal of Welding and Joining
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• 제29권6호
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• pp.65-70
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• 2011

The effect of flip chip bonding parameters on formation of intermetallic compounds (IMCs) between Au stud bumps and Sn-3.5Ag solder was investigated. In this study, flip chip bonding temperature was performed at $260^{\circ}C$ and $300^{\circ}C$ with various bonding times of 5, 10, and 20 sec. AuSn, $AuSn_2$ and $AuSn_4$ IMCs were formed at the interface of joints and (Au, Cu)$_6Sn_5$ IMC was observed near Cu pad side in the joint. At bonding temperature of $260^{\circ}C$, $AuSn_4$ IMC was dominant in the joint compared to other Au-Sn IMCs as bonding time increased. At bonding temperature of $300^{\circ}C$, $AuSn_2$ IMC clusters, which were surrounded by $AuSn_4$ IMC, were observed in the solder joint due to fast diffusivity of Au to molten solder with increased bonding temperature. Bond strength of Au stud bump joined with Sn-3.5Ag solder was about 23 gf/bump and fracture mode of the joint was intergranular fracture between $AuSn_2$ and $AuSn_4$ IMCs regardless bonding conditions.

• 한국재료학회지
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• 제18권1호
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• pp.45-50
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• 2008

Microstructural evolution and the intermetallic compound (IMC) growth kinetics in an Au stud bump were studied via isothermal aging at 120, 150, and $180^{\circ}C$ for 300hrs. The $AlAu_4$ phase was observed in an Al pad/Au stud interface, and its thickness was kept constant during the aging treatment. AuSn, $AuSn_2,\;and\;AuSn_4$ phases formed at interface between the Au stud and Sn. $AuSn_2,\;AuSn_2/AuSn_4$, and AuSn phases dominantly grew as the aging time increased at $120^{\circ}C,\;150^{\circ}C,\;and\;180^{\circ}C$, respectively, while $(Au,Cu)_6Sn_5/Cu_3Sn$ phases formed at Sn/Cu interface with a negligible growth rate. Kirkendall voids formed at $AlAu_4/Au$, Au/Au-Sn IMC, and $Cu_3Sn/Cu$ interfaces and propagated continuously as the time increased. The apparent activation energy for the overall growth of the Au-Sn IMC was estimated to be 1.04 eV.

• Journal of Welding and Joining
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• 제32권3호
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• pp.60-67
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• 2014

The ability of electronic packages and assemblies to resist solder joint failure is becoming a growing concern. This paper reports on a study of high speed shear energy of Sn-4.0wt%Ag-0.5wt%Cu (SAC405) solder with different electroless Ni-P thickness, with $HNO_3$ vapor's status, and with various pre-conditions. A high speed shear testing of solder joints was conducted to find a relationship between the thickness of Ni-P deposit and the brittle fracture in electroless Ni-P deposit/SAC405 solder interconnection. A focused ion beam (FIB) was used to polish the cross sections to reveal details of the microstructure of the fractured pad surface with and without $HNO_3$ vapor treatment. A scanning electron microscopy (SEM) and an energy dispersive x-ray analysis (EDS) confirmed that there were three intermetallic compound (IMC) layers at the SAC405 solder joint interface: $(Ni,Cu)_3Sn_4$ layer, $(Ni,Cu)_2SnP$ layer, and $(Ni,Sn)_3P$ layer. The high speed shear energy of SAC405 solder joint with $3{\mu}m$ Ni-P deposit was found to be lower in pre-condition level#2, compared to that of $6{\mu}m$ Ni-P deposit. Results of focused ion beam and energy dispersive x-ray analysis of the fractured pad surfaces support the suggestion that the brittle fracture of $3{\mu}m$ Ni-P deposit is the result of Ni corrosion in the pre-condition level#2 and the $HNO_3$ vapor treatment.

• ETRI Journal
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• 제37권2호
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• pp.387-394
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• 2015

A novel interconnection technology based on a 52InSn solder was developed for flexible display applications. The display industry is currently trying to develop a flexible display, and one of the crucial technologies for the implementation of a flexible display is to reduce the bonding process temperature to less than $150^{\circ}C$. InSn solder interconnection technology is proposed herein to reduce the electrical contact resistance and concurrently achieve a process temperature of less than $150^{\circ}C$. A solder bump maker (SBM) and fluxing underfill were developed for these purposes. SBM is a novel bumping material, and it is a mixture of a resin system and InSn solder powder. A maskless screen printing process was also developed using an SBM to reduce the cost of the bumping process. Fluxing underfill plays the role of a flux and an underfill concurrently to simplify the bonding process compared to a conventional flip-chip bonding using a capillary underfill material. Using an SBM and fluxing underfill, a $20{\mu}m$ pitch InSn solder SoP array on a glass substrate was successfully formed using a maskless screen printing process, and two glass substrates were bonded at $130^{\circ}C$.

• 마이크로전자및패키징학회지
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• 제7권2호
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• pp.13-19
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• 2000

금속간 화합물의 두께와 솔더와 금속간 화합물의 계면 거칠기가 Cu pad위의 BGA솔더 조인트의 전단강도에 미치는 영향을 Sn (0. 1.5, 2.5wt.% Cu)와 Sn-40Pb (0, 0.5wt.% Cu) 솔더를 사용하여 알아보았다. 각각의 조성의 솔더를 사용하여 솔더링 반응을 1, 2 ,4분 동안 한 후 전단강도를 측정하였다. Sn솔더에 Cu 첨가는 초기 금속간 화합물의 두께를 증가시키는 결과를 가져오는 반면 Sn-40Pb 솔더의 경우에는 주로 금속간 화합물/솔더의 계면거칠기의 감소를 가져오게 된다. 최대 전단 강도값을 나타내는 금속간 화합물의 임계두께는 솔더의 물질에 따라 변하게 되는데, 본 실험에서는 Sn-Cu솔더의 경우에는 ~2.3 $\mu\textrm{m}$, Sn-Pb-Cu에서는 ~ 1.2 $\mu\textrm{m}$ 정도로 측정되었다. 금속간 화합물의 임계두께는 금속간 화합물/솔더의 계면이 더욱 거칠어질수록 증가하는 것으로 나타났다. 이는 파단면 관찰에서 나타난 초기의 솔더내에서의 파괴가 금속간 화합물이 임계두께 이상으로 성장함에 금속간 화합물/솔더의 계면으로 이동하는 결과와 일치한다.

• 마이크로전자및패키징학회지
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• 제17권4호
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• pp.35-40
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• 2010

본 연구에서는 상용 고온 솔더 중 많이 쓰이고 있는 Sn-3.5Ag, Sn-0.7Cu, Sn-5.0Sb 솔더에 대한 열충격 시험, 열싸이클 시험, 고온 진동 복합 시험 신뢰성 평가를 하였다. 테스트 샘플을 제작하기 위해 Sn-3.5Ag, Sn-0.7Cu, Sn-5.0Sb 솔더볼을 ENIG 표면 처리된 BGA에 접합하였으며, 그 후 BGA샘플을 OSP 표면 처리된 PCB에 실장 하였다. 신뢰성평가 동안 저항변화를 측정하였으며 신뢰성 평가 전후 전단강도 시험을 통하여 접합강도의 변화를 평가하였다. Sn-3.5Ag의 솔더인 경우 전기저항과 접합강도의 저하가 비교 평가한 3가지 솔더 중 가장 높은 저하율을 보였으며 Sn-0.7Cu의 솔더가 신뢰성 평가 후에 비교적 높은 안정성을 나타내었다.

• Corrosion Science and Technology
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• 제6권2호
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• pp.50-55
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• 2007

The smaller size and higher integration of advanced electronic package systems result in severe electrochemical reliability issues in microelectronic packaging due to higher electric field under high temperature and humidity conditions. Under these harsh conditions, electronic components respond to applied voltages by electrochemical ionization of metal and the formation of a filament, which leads to short-circuit failure of an electronic component, which is termed electrochemical migration. This work aims to evaluate electrochemical migration susceptibility of the pure Sn, Sn-3.5Ag, Sn-3.0Ag-0.5Cu solder alloys in $Na_{2}SO_{4}$. The water drop test was performed to understand the failure mechanism in a pad patterned solder alloy. The polarization test and anodic dissolution test were performed, and ionic species and concentration were analyzed. Ag and Cu additions increased the time to failure of Pb-free solder in 0.001 wt% $Na_{2}SO_{4}$ solution at room temperature and the dendrite was mainly composed of Sn regardless of the solders. In the case of SnAg solders, when Ag and Cu added to the solders, Ag and Cu improved the passivation behavior and pitting corrosion resistance and formed inert intermetallic compounds and thus the dissolution of Ag and Cu was suppressed; only Sn was dissolved. If ionic species is mainly Sn ion, dissolution content than cathodic deposition efficiency will affect the composition of the dendrite. Therefore, Ag and Cu additions improve the electrochemical migration resistance of SnAg and SnAgCu solders.

• 대한용접접합학회:학술대회논문집
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• 대한용접접합학회 2004년도 춘계 학술발표대회 개요집
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• pp.75-77
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• 2004

Microstructure and mechanical property of In48Sn solder on electrolytic Au/Ni/Cu BGA substrate were investigated with the number of reflows. AuIn and AuIn$_2$ IMCs were formed at the interface solder and pad after 1reflow. An increase of the number of reflows changed AuIn into AuIn$_2$. AuIn$_2$ IMC layer at the interface broke and spalled away into the solder after 3reflows. Shear force decreased with the number of reflows because the weakness of the interface by the spalling of AuIn$_2$ IMC layer.

• 대한용접접합학회:학술대회논문집
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• 대한용접접합학회 2003년도 춘계학술발표대회 개요집
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• pp.193-195
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• 2003

Micro-structure and shear properties with reflow conditions, reflow temperature and time, for In-48Sn solder on BGA package were examined at the temperature between 140 and 170$^{\circ}C$ for 10 to 3600sec. With increasing reflow temperature and time, the thickness of intermetallic compound formed between solder and pad increased. Shear test indicated shear force increased in the range to a critical value of reflow time, and decreased over a critical reflow time. With increasing reflow temperature and time, the crater occurred on fracture surface because of a increase of crater by voids and IMC particles precipitated in solder.