• 한국진공학회:학술대회논문집
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• 한국진공학회 2014년도 제46회 동계 정기학술대회 초록집
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• pp.473.1-473.1
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• 2014

We report on the characteristics of Zr-doped $In_2O_3$ (IZrO) films prepared by DC-RF magnetron cosputtering of $In_2O_3$ and $ZrO_2$ targets for use as a transparent electrode for high efficient organic solar cells (OSCs). The effect of $ZrO_2$ doping power on electrical, optical, structural, and surface morphology of the IZrO film was investigated in detail. At optimized $ZrO_2$ RF power of 50 W, the IZrO film exhibited a low sheet resistance of 20.71 Ohm/square, and a high optical transmittance of 83.9 %. Furthermore, the OSC with the IZrO anode showed a good cell-performance: fill factor of 61.71 %, short circuit current (Jsc) of $8.484mA/cm^2$, open circuit voltage (Voc) of 0.593 V, and power conversion efficiency (PCE) of 3.106 %. In particular, the overall OSC characteristics of the cell with the IZrO anode were comparable to those of the OSC with the conventional Sn-doped $In_2O_3$ (FF of 65.03 %, Jsc of $8.833mA/cm^2$, Voc of 0.608 V, PCE of 3.495 %), demonstrating that the IZrO anode is a promising alternative to ITO anode in OSCs.

• 한국결정성장학회지
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• 제7권3호
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• pp.418-427
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• 1997

$La_2O_3$가 각각 0, 0.1, 0.3, 0.5, 0.7, 1, 3, 5 mole% 첨가된 $0.05pb(Sn_{0.5}Sb_{0.5})O_3＋0.11PbTiO_30.84PbZroO_3＋0.4Wt%MnO_2$ (이하 0.05PSS -0.11PT-0.84PZ+0.4wt%$MnO_2$)계를, $1250^{\circ}C$에서 $PbZrO_3$를 분위기 분말로 사용하여 성형체 무게의 1/2을 함께 넣고 소결체를 제조하여 그 특성을 분석하였다. 소결체의 밀도는 7.683 g/$\textrm {cm}^3$에서 7.515 g/$\textrm {cm}^3$ 범위였으며, 3 mole% $La_2O_3$를 첨가한 경우 가장 높은 값을 나타내었다. 0에서 5 mole% 범위에서 $La_2O_3$ 첨가량을 증가시킬 때 평균 입경이 9.0 $\mu \textrm{m}$에서 1.3 $\mu\textrm{m}$까지 감소되었다. 결정구조의 경우 $La_2O_3$첨가량을 0에서 1 mole%로 할 때 0.05PSS-0.11 PT-0,84PZ계에서 고용된 상을 형성하였으나 3, 5 mole%로 첨가량을 증가시킴에 따라 제2차 산이 형성되었고, 소결체를 $120^{\circ}C$ 또는 $140^{\circ}C$에서 $5 KV_{DC}$ /mm로 20분간 poling 전후에 $La_2O_3$ 첨가량이 0 에서 3 mlole%까지 증가될수록 1KHz에서의 유전 상수는 증가되었으며, 유전손실은 모든 경우에서 1 % 미만의 값을 나타내었다. $La_2$O$_3$첨가량이 0, 0.5, 1, 3 mole%로 증가됨에 따라 큐리온도가 208$^{\circ}C$, 183$^{\circ}C$, $152^{\circ}C$ 그리고 $127^{\circ}C$로 감소되었다. $La_2O_3$가 증가됨에 따라 대체로 $K_{p}$ 증가되었으며 0.7 mlole%의 $La_2O_3$를 첨가한 소결체를 $140^{\circ}C$에서 poling한 경우 가장 높은 $K_p$값으로 14.5 %를 나타내었다.

• 한국신재생에너지학회:학술대회논문집
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• 한국신재생에너지학회 2010년도 추계학술대회 초록집
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• pp.42.2-42.2
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• 2010

Transparent conducting oxides (TCOs) are of significant importance for their applications in various devices, such as light-emitting diodes, thin-film solar cells, organic light-emitting diodes, liquid crystal displays, and so on. In order for TCOs to contribute to the performance improvement of these devices, TCOs should have high transmittance and good electrical properties simultaneously. Sn-doped $In_2O_3$ (ITO) is the most commonly used TCO. However, indium is toxic and scarce in nature. Thus, ZnO has attracted a lot of attention because of the possibility for replacing ITO. In particular, group III impurity-doped ZnO showed the optoelectronic properties comparable to those of ITO electrodes. Al-doped ZnO exhibited the best performance among various doped ZnO films because of the high substitutional doping efficiency. However, in order for the Al-doped ZnO to replace ITO in electronic devices, their electrical and optical properties should further significantly be improved. In this connection, different ways such as a variation of deposition conditions, different deposition techniques, and post-deposition annealing processes have been investigated so far. Among the deposition methods, RF magnetron sputtering has been extensively used because of the easiness in controlling deposition parameters and its fast deposition rate. In addition, when combined with post-deposition annealing in a reducing ambient, the optoelectronic properties of Al-doped ZnO films were found to be further improved. In this presentation, we deposited Al-doped ZnO (ZnO:$Al_2O_3$ = 98:2 wt%) thin films on the glass and sapphire substrates using RF magnetron sputtering as a function of substrate temperature. In addition, the ZnO samples were annealed in different conditions, e.g., rapid thermal annealing (RTA) at $900^{\circ}C$ in $N_2$ ambient for 1 min, tube-furnace annealing at $500^{\circ}C$ in $N_2:H_2$=9:1 gas flow for 1 hour, or RTA combined with tube-furnace annealing. It is found that the mobilities and carrier concentrations of the samples are dependent on growth temperature followed by one of three subsequent post-deposition annealing conditions.