• Journal of Power Electronics
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• 제12권2호
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• pp.317-325
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• 2012

Resonant immittance converter (RIC) topologies can transform a current source into a voltage source (Type-I RICs) and vice versa (Type-II RICs), thereby making them suitable for many power electronics applications. RICs are operated at a fixed frequency where the resonant immittance network (RIN) exhibits immittance conversion characteristics. It is observed that the low-frequency response of Type-II RINs is relatively flat and that the state variables associated with Type-II RINs affect the response only at the high frequencies in the vicinity of the switching frequency. The overall response of a Type-II RIC is thus dominated by the filter response, which is particularly important for the controller design. Therefore, an approximate equivalent circuit model and a small-signal model of Type-II RICs are proposed in this paper, neglecting the high-frequency response of Type-II RINs. While the proposed models greatly simplify and speed-up the analysis, it adequately predicts the open-loop transient and small-signal ac behavior of Type-II RICs. The validity of the proposed models is confirmed by comparisons of their results with those obtained from a cycle-by-cycle simulation and with an experimental prototype.

• 전자공학회논문지D
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• 제35D권1호
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• pp.49-58
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• 1998

In this paper, a new equivalent circuit model for quantum-well laser diode (LD) is proposed. The model includes carrier transport effects in the SCH region, and rprovides, in a stable and accurate manner, large-and small-signal responses of laser diode output power as function of injected currents. SPICE simulation was performed using the circuit model and results are presented for L-I characteristics, pulse and frequency responses under various conditions. It is expencted that the new equaivalent circuit model will find useful applications for designing and analyzing OEIC, LD driver circuits, and LD packaging.

• Transactions on Electrical and Electronic Materials
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• 제9권6호
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• pp.260-264
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• 2008

The operational characteristics of superconducting amplifier using vortex flux flow were analyzed from an equivalent circuit in which its current-voltage characteristics for the vortex motion in YBCO microbridge were reflected. For the analysis of operation as an amplifier, dc bias operational point for the superconducting amplifier is determined and then ac operational characteristics for the designed superconducting amplifier were investigated. The variation of transresistance, which describes the operational characteristics of superconducting amplifier, was estimated with respect to conditions of dc bias. The current and the voltage gains, which can be derived from the circuit for small signal analysis, were calculated at each operational point and compared with the results obtained from the numerical analysis for the small signal circuit. From our paper, the characteristics of amplification for superconducting flux flow transistor (SFFT) could be confirmed. The development of the superconducting amplifier applicable to various devices is expected.

• 전력전자학회:학술대회논문집
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• 전력전자학회 1997년도 전력전자학술대회 논문집
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• pp.101-110
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• 1997

The circuit effects due to the transformer primary side series equivalent inductance in the Zero Voltage Switching Pulse Width Modulated Half Bridge DC/DC Converter and its impact on the effective duty are analyzed. The steady state equations and the small signal model of the converter are derived incorporating the effects of the complementary control and the utilization of transformer primary side series equivalent inductance. The open plant dynamics are analyzed on the basis of the model derived. The model predictions are confirmed by experimental measurements.

• 한국지능시스템학회논문지
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• 제11권6호
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• pp.500-504
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• 2001

에미커 크기가 2$\times10\mu m^2$인 InGaP/GaAs이종접합 바이폴라 트랜지스터의 T자 모양으로 연결된 등기회로 요소를추출하기 위하여, 경계구간 설정이 개선된 유전자 알고리즘을 채택하였다. 이 소신호 모델 파리미터를 유전자 알고리즘을 사용하여, 다양한 순방향 바이서스에 측정한 S-파리미터로부터 추출하였다. 추출된 값들은 물리적인의미와 일관성을 보여준다. 모델 S-파리미터는 측정 S-파라미터와 2GHz-26.6GHz의 주파수 범위에서 잘 일치한다.

• JSTS:Journal of Semiconductor Technology and Science
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• 제5권2호
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• pp.113-119
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• 2005

4H-SiC planar MESFETs were fabricated using ion-implantation on semi-insulating substrate without recess gate etching. A modified RCA method was used to clean the substrate before each procedure. A thin, thermal oxide layer was grown to passivate the surface and then a thick field oxide was deposited by CVD. The fabricated MESFET showed good contact properties and DC/RF performances. The maximum oscillation frequency of 34 GHz and the cut-off frequency of 9.3 GHz were obtained. The power gain was 10.1 dB and the output power of 1.4 W was obtained for 1 mm-gate length device at 2 GHz. The fabricated MESFETs showed the charge trapping-free characteristics and were characterized by the extracted small-signal equivalent circuit parameters.

• 전력전자학회:학술대회논문집
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• 전력전자학회 2004년도 전력전자학술대회 논문집(2)
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• pp.610-614
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• 2004

Recently, an active-clamp, full-bridge boost converter has been actively studied for high-power applications such as power factor correction and battery discharger. However, DC and AC modeling for this converter has not conquered. In this paper, a DC and small-signal AC modeling for the active-clamp, full-bridge boost converter is described. Based on the operation principle, the ac part of the converter can be replaced by a do counterpart. Then, a conceptual equivalent circuit is derived by rearranging the switches. The equivalent circuit for this converter consists of CCM (Continuous conduction mode) boost and DCM (Discontinuous conduction mode) buck converter. The analyses for the equivalent CCM boost and DCM buck converter are done using the model of PWM switch. The theoretical modeling results are confirmed through experiment or SIMPLIS simulation.

• Journal of Positioning, Navigation, and Timing
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• 제10권3호
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• pp.229-234
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• 2021

In this paper, a study was conducted on the power amplifier control required to design an eLoran transmitter system using a low-height antenna. The eLoran transmitter developed during the eLoran technology development project conducted in Korea used a small 35 m antenna due to the difficulty of securing a site for antenna installation. This antenna height is very low compared to the height of 750 m which is required for eLoran 100 kHz signal transmission without any radiation loss. In the case of using such a small antenna, not only the radiation efficiency of the transmission is lowered, but also the power module control must be performed more precisely in order to transmit the eLoran standard signal. The equivalent RLC circuit of the transmitter system was implemented and transient analysis was conducted to derive the input required voltage for satisfying the output requirement. The voltage waveform was also generated by the RLC circuit analysis to generate the eLoran signal. Furthermore, we suggest power width modulation method to control eLoran power amplifier module more sophisticatedly.

• 한국산업정보학회논문지
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• 제6권3호
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• pp.123-127
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• 2001

CMOS 트랜지스터의 등가회로모델 파라미터 $C_{gs}$ 의 예측방법이 CMOS 트랜지스의 반전층내의 유동전하량 계산과 전하유도 특성에 의해 제안되었다. 이 $C_{gs}$ 파라미터는 MOS 트랜지스터의 RF대역의 차단주파수를 결정하고 또한 입력과 출력을 커플링 시키는 중요한 파라미터이다. 이 제안된 방법은 등가회로 모델에서 파라미터 값을 예측하고 파라미터 값을 추출하는 소프트웨어 개발에 기여할 것이다.

• 대한전자공학회:학술대회논문집
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• 대한전자공학회 2005년도 추계종합학술대회
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• pp.809-812
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• 2005

In this work, a new method for extracting substrate parameters of RF MOSFETs based on 3-port measurement is presented using device simulation. A T-type substrate resistance network is used. 3-port Y-parameter analyses were performed on the equivalent circuit of RF MOSFETs. All the components in the RF MOSFETs when the device is turned off were extracted directly from the 3-port device simulation data. The small-signal output admittance $Y_{22}$ can be well modeled up to 40 GHz. From the 3-port simulation and modeling results, it was verified that the proposed equivalent circuit and parameter extraction method was more accurate than the single substrate resistance model.