• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.14 no.6
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• pp.475-480
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• 2001

Glasses in he system CuO-P$_2$O$_{5}$ -Nb$_2$O$_{5}$ -Nb$_2$O$_{5}$ -V$_2$O$_{5}$ were prepared by a press-quenching method on the copper plate. the glass-ceramics from these glasses were obtained by post-heat treatment, and the crystallization behavior and DC conductivities were determined. The conductivities of the glasses were range from 10$^{-6}$ s.$cm^{-1}$ / at room temperature ,but the conductivities of the glass-ceramics were 10$^{-3}$ s.$cm^{-1}$ / increased by 10$^3$ order. The crystalline product in the glass-ceramics was CuV$_2$O$_{6}$ . the crystal growth of CuV$_2$O$_{6}$ phase increased with heat-treatment conditions. The linear relationship between il($\sigma$T) and T$^{-1}$ suggested that the electrical conduction in the present glass-ceramics would be due to a small polaron hopping(SPH) mechanism.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2006.11a
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• pp.304-304
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• 2006

Ternary tellurite glassy systems ($Li_2O-V_2O_5-TeO_2$) have been synthesised using Vanadium oxide as a network former and Lithium oxide as network modifier. The addition of a metal oxide makes them electric or mixed electric-ionic conductors, which are of potential interest as cathode materials for solid-state batteries. This glass-ceramics crystallized from the $Li_2O-V_2O_5-TeO_2$ system are particularly interesting, because they exhibit high conductivity (up to $5.63{\times}10^{-5}$ S/cm) at room temperature the glass samples were prepared by quenching the melt on the copper plate and the glass-ceramics were heat-treated at crystallizing temperature determined from differential thermal analysis (DTA). The electric DC conductivity result have been analyzed in terms of a small polaron-hopping model.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2005.07a
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• pp.334-335
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• 2005

Ternary tellurite glassy systems ($Li_2O-V_2O_5-P_2O_5$) have been synthesised using Vanadium oxide as a network former and Lithium oxide as network modifier. The addition of a metal? oxide makes them electric or mixed electric-ionic conductors, which are of potential interest as cathode' materials for solid-state batteries. This glass-ceramics crystallized from the $Li_2O-V_2O_5-P_2O_5$ system are particularly interesting, because they exhibit high conductivity (up to $5.95\times10^{-4}$ S/cm) at room temperature. the glass samples were prepared by quenching the melt on the copper plate and the glass-ceramics were heat-treated at crystallizing temperature determined from differential thermal analysis (DTA). The electric D.C conductivity result have been analyzed in terms of a small polaron-hopping model.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2003.07b
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• pp.934-937
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• 2003

Glasses in the system $CuO-P_2O_5-V_2O_5$ were prepared by a press-quenching method on the copper plate. The glass-ceramics from these glasses were obtained by post-heat treatment, and the crystallization behavior and DC conductivities were determined. The conductivities of the glasses were range from $10^{-6}s.Cm^{-1}$ at room temperature, but the conductivities of the glass-ceramics were $10^{-3}s.Cm^{-1}$ increased by $10^3$ order. The crystalline product in the glass-ceramics was $CuV_2O_6$. Heat-treatment conditions influenced the crystal growth of $CuV_2O_6$ and conductivity. The linear relationship between in (${\sigma}T$) and $T^{-1}$ suggested that the electrical conduction in the present glass-ceramics would be due to a small polaron hopping(SPH) mechanism.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2004.07b
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• pp.842-844
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• 2004

Ternary tellurite glassy systems $(CuO-V_2O_5-TeO_2)$ have been synthesised using tellurium oxide as a network former and copper oxide as network modifier. The addition of a transition-matal oxide makes them electric or mixed electric-ionic conductors, which are of potential interest as cathode materials for solid-state batteries. This glass-ceramics crystallized from the $CuO-V_2O_5-TeO_2$ system are particularly interesting, because they exhibit high conductivity ( up to $6.03{\times}10^{-3}S/cm$) at room temperature. the glass samples were prepared by quenching the melt on the copper plate and the glass-ceramics were heat-treated at crystallizing temperature determined from differential thermal analysis (DTA). The electric D.C conductivity result have been analyzed in terms of a small polaron-hopping model.

• Journal of the Korean Magnetics Society
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• v.17 no.2
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• pp.86-89
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• 2007

[ $FeCr_2Se_4$ ] prepared under the high pressure (3 GPa) has been studied with x-ray, neutron diffraction techniques, superconducting quantum interference device (SQUID) magnetometer, resistance, and Mossbauer spectroscopy. The temperature dependence of resistance is explained by Mott-VRH and small polaron model for the regions I (T<20 K) and II (T>42 K), respectively. Neutron diffraction results show an antiferromagnetic spin-lattice coupling near the Neel temperature. So finally the distance of atom is enlarged in region (110$FeCr_2Se_4$ shows convex type of temperature dependence.

• Journal of Sensor Science and Technology
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• v.28 no.1
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• pp.41-46
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• 2019

In order to develop novel thermal imaging materials for microbolometer applications, $[(Ni_{0.3}Mn_{0.7})_{1-x}Cu_x]_3O_4$ ($0.18{\leq}x{\leq}0.26$) thin films were fabricated using metal-organic decomposition. Effects of Cu content on the electrical properties of the annealed films were investigated. Spinel thin films with a thickness of approximately 100 nm were obtained from the $[(Ni_{0.3}Mn_{0.7})_{1-x}Cu_x]_3O_4$ films annealed at $380^{\circ}C$ for five hours. The resistivity (${\rho}$) of the annealed films was analyzed with respect to the small polaron hopping model. Based on the $Mn^{3+}/Mn^{4+}$ ratio values obtained through x-ray photoelectron spectroscopy analysis, the hopping mechanism between $Mn^{3+}$ and $Mn^{4+}$ cations discussed in the proposed study. The effects of $Cu^+$ and $Cu^{2+}$ cations on the hopping mechanism is also discussed. Obtained results indicate that $[(Ni_{0.3}Mn_{0.7})_{1-x}Cu_x]_3O_4$ thin films with low temperature annealing and superior electrical properties (${\rho}{\leq}54.83{\Omega}{\cdot}cm$, temperature coefficient of resistance > -2.62%/K) can be effectively employed in applications involving complementary metal-oxide semiconductor (CMOS) integrated microbolometer devices.