• Journal of the Semiconductor & Display Technology
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• v.2 no.1
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• pp.21-24
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• 2003

Sludged silicon powders that are generated during silicon ingot slicing process have potential usage as silicon source in fabricating silicon carbide powders by adding carbon. A thermodynamic calculation is performed to consider a plausible formation condition for the silicon carbide powders. A thin silicon oxide layer around silicon powder is sufficient to supply equilibrium oxygen partial pressure at the formation temperature($1400^{\circ}C$) of the silicon carbide in the Si-C-O ternary system. Formation of silicon carbide by using the sludged silicon powders is more efficient than by using silicon oxide powders.

• Proceedings of the Korean Ceranic Society Conference
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• 2003.10a
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• pp.215.1-215
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• 2003

• Journal of the Microelectronics and Packaging Society
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• v.10 no.3
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• pp.67-71
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• 2003

Sawing silicon ingot with abrasive slurry generates sludge that includes abrasive powders, cutting oil, and silicon powders. The abrasive powders and cutting oil are being separated and reused. Mixing the remained stodged silicon powders with carbon powders and subsequent heat-treatment are conducted to produce silicon carbide. The size of SiC whiskers and powders was smaller than the conventionally grown silicon carbide whiskers that were synthesized by adding micron-size metal impurities. Impurity related mechanism is attributed to the formation of the silicon carbide whiskers, as metal impurities are contained in the stodged silicon powders.