• International Journal of Internet, Broadcasting and Communication
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• 제12권2호
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• pp.30-36
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• 2020

We demonstrated a successful fabrication of 4" Gallium Nitride (GaN)/Diamond High Electron Mobility Transistors (HEMTs) incorporated with Inner Slot Via Hole process. We made in manufacturing technology of 4" GaN/Diamond HEMT wafers in a compound semiconductor foundry since reported [1]. Wafer thickness uniformity and wafer flatness of starting GaN/Diamond wafers have improved greatly, which contributed to improved processing yield. By optimizing Laser drilling techniques, we successfully demonstrated a through-substrate-via process, which is last hurdle in GaN/Diamond manufacturing technology. To fully exploit Diamond's superior thermal property for GaN HEMT devices, we include Aluminum Nitride (AlN) barrier in epitaxial layer structure, in addition to conventional Aluminum Gallium Nitride (AlGaN) barrier layer. The current collapse revealed very stable up to Vds = 90 V. The trapping behaviors were measured Emission Microscope (EMMI). The traps are located in interface between Silicon Nitride (SiN) passivation layer and GaN cap layer.

• Wind and Structures
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• 제38권3호
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• pp.203-214
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• 2024

Large-span cantilevered roof represents a unique type of structure that is vulnerable to wind loads. Inspired by the need to maximumly reducing the rooftop wind loads, this study examined the feasibility of positioning vented slots on the leading edge, and the effectiveness of such aerodynamic mitigation measures are assessed via both physical and numerical simulations. The reliability of numerical simulation was evaluated via comparisons with the wind tunnel tests. The results indicated that, the variation of venting hole arrangement can cause significant change in the rooftop wind load characteristics. For the cases involved in this study, the maximum reduction of mean and peak wind suction coefficients are found to be 9% and 8% as compared to the original circular slot without venting holes. In addition, the effect of slot shape is also evident. It was shown that the triangular shaped slot tends to increase the wind suction near the leading edge, whereas the hexagonal and octagonal shaped slots are found to decrease the wind suction. In particular, with the installation of octagonal shaped slot, the maximum reduction of wind suction coefficients near the leading edge reaches up to 31% as compared to the circular shaped slot, while the maximum reduction of mean wind suction coefficients is about 30%.

• 한국전자파학회논문지
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• 제11권4호
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• pp.514-522
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• 2000

본 논문에서는 위상천이기 없이 전 방향으로 빔의 주사를 가능하도록 하기 위해 기존의 능동 위상배열 안테 나의 슬롯라인 결합구조를 이용하여 패치 안테나와 능동 소자를 Via-hole을 이용하여 접합함으로써 $4\times4$ 능동 위상배열 안테나를 설계하고 제작하여 그 특성을 고찰하였다. 제안된 이차원 능동 위상배열 안테나는 슬롯라인 결합구조를 이용하여 기생방사 결합에 의한 방사패턴의 왜곡울 방지하고, 전체 안테나의 크기도 최소화하며 F FET의 바이어스 전압 조정으로 발진 주파수를 조정할 수 있도록 하였다 .. $4\times4$ 소자를 이용하여 주파수 12.5 GHz에서 발진 주파수가 locking하는 배열된 능동 위상배열 안테나의 일차원 빔 주사 범위는 브로드사이드로부터 $-17^{\circ}~18^{\circ}$로 나타났고, 시율레이션 결과와 대체로 일치했으나 사이드 로브 레벨이 약간 높게 나타났 다. 이차원 빔 주사를 이용하여 $\phi_0=45^{\circ}$일 때의 빔 주사 범위는 $-5^{\circ}~10^{\circ}$로 나타났다. 이를 이용하여 2차원 빔 주사에 응용할 수 있음을 확인하였고, 이것은 위성을 이용한 방송 및 통신 시스탬이나 radar 시스댐에 응용될 수 있을 것이다.