• Korean Journal of Materials Research
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• v.33 no.12
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• pp.537-549
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• 2023

The sintering shrinkage behaviors of low temperature cofired ceramics (LTCC) and resistors were compared using commercial LTCC and thick-film resistor pastes, and factors influencing the camber of cofired resistor/LTCC bi-layers were also investigated. The onset of sintering shrinkage of the resistor occurred earlier than that of LTCC in all resistors, but the end of sintering shrinkage of the resistor occurred earlier or later than that of LTCC depending on the composition of the resistor. The sintering shrinkage end temperature and the sintering shrinkage temperature interval of the resistor increased as the RuO₂/glass volume ratio of the resistor increased. The camber of cofired resistor/LTCC bi-layers was obtained using three different methods, all of which showed nearly identical trends. The camber of cofired resistor/LTCC bi-layers was not affected by either the difference in linear shrinkage strain after sintering between LTCC and resistors or the similarity of sintering shrinkage temperature ranges of LTCC and resistors. However, it was strongly affected by the RuO₂/glass volume ratio of the resistor. The content of Ag and Pd had no effect on the sintering shrinkage end temperature or sintering shrinkage temperature interval of the resistor, or on the camber of cofired resistor/LTCC bi-layers.

• Journal of Powder Materials
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• v.5 no.4
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• pp.286-292
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• 1998

Ni$_3$Al intermetallic compound has been tested as a binder phase, in order to improve the oxidation resistance and the mechanical properties of TiC-Ni cermet at a high temperature. The wettability of $Ni_3Al$ on TiC and the optimum sintering condition were investigated in TiC-(30, 40) vol% $Ni_3Al$ cermets with the sintering temperature (1380~$1430^{\circ}C$) and time (30~99 min). The results are summarized as follows: 1) Ni$_3$Al showed good wettability on TiC above 1400$^{\circ}C$ ; 2) The shrinkages of the specimens increased with the sintering temperature, the sintering time and the binder content, whereas the relative densities were decreased; 3) Any other phase did not appeared in the microstructures of all sintered cermets. The grain sizes of TiC became larger as the sintering temperature and the sintering time as well as the binder content increased; 4) The hardness of the cermets decreased with increase in the sintering temperature and the sintering time as well as the binder content; 5) The transverse-rupture strength of the cermets increased with the sintering temperature and the sintering time, whereas it decreased with the binder content.

• Journal of the Korean Ceramic Society
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• v.36 no.5
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• pp.483-489
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• 1999

Gas pressure sintered silicon nitride based composites with 3 wt% $\beta$-Si3N4 whiskers were prepared and change of properties according to the whisker orientation and sintering temperature was studied. The tapes with whiskers were fabricated by two different method ; conventional tape casting and a modified tape casting by using guide pins,. Orientations of the whiskers were controlled by different stacking sequences of the sheets cut from the tape. Samples were fully densified by gas pressure sintering at 2148-2273K. As the sintering temperature increased size of the large elongated grains increased. In case of unidirectional samples sintering shrinkage normal to the whisker alignment direction was larger than that of parallel to the direction and the shrinkage anisotropy increased slightly as sintering temperature increased. As sintering temperature increased the crack length parallel to whisker alignment direction became shorter but that normal to the direction did not depend on sintering temperature. In case of cross-plied samples the anisotropy of mechanical properties disappeared.

• Journal of Powder Materials
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• v.11 no.1
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• pp.69-73
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• 2004

The sintering characteristics of commercial 7xxx series Al-Zn-Mg-Cu alloy have been investigated. Sintering system of this blended elemental powder has aspects of both transient and supersolidus liquid phase sintering. Transient liquids occur when the constitution point during sintering lies in a solid phase region but where the sintering temperature is greater than either the melting point of one of the constituent or a eutectic temperature. Supersolidus liquid phase sintering occurs when a preblended powder is heated to a temperature between the solidus and liquids. However, these reaction were restrained their inter diffusion due to the appearance of the oxide film. Thus, 7xxx series Al alloy is extremely sensitive to process variables, including particle size, holding time and sintering temperature. Therefore, above phenomenons were observed formation and behaviour of the liquid by using SEM and DSC.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2003.11a
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• pp.321-324
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• 2003

The effects of various sintering additives such as $Bi_2O_3+V_2O_5$, $BiVO_4$, $B_2O_3$, and $CuO+V_2O_5$ on the low-temperature sintering and microwave dielectric properties of $(ZnMg)TiO_3$ system were studied. Sintering was enhanced by the sintering additives and highly dense samples were obtained for $(Zn_{0.8}Mg_{0.2})TiO_3$ at the sintering temperature of $910^{\circ}C$. $(Zn_{0.8}Mg_{0.2})TiO_3$ with 6.19 mol.%$B_2O_3$ was found to show the best sintering and microwave dielectric properties.

• Journal of the Korean Ceramic Society
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• v.27 no.3
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• pp.337-344
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• 1990

As a function of sintering temperature and time, the electrical properties of ruthenium based thick film resistors were investigated with microstructure. The variatio of resistivity and TCR(temperature coefficient of resistance)trends of sintered speciman at various sintering temperature were different low resistivity paste(Du Pont 1721) from high one(Du Pont 1741). These phenomena are deeply relative to microstructure of sintered film. With increasing the sintering temperature for 1721 system, the electrical sheet resistivity decreased, but again gradually increased above 80$0^{\circ}C$. And TCR trends in 1721 system are all positive. On the other hand the electrical sheet resistivity of 1741 resistor system decreased with sintering temperature. And TCR trends variable according to sintering temperature. TCR of speciman sintered at $700^{\circ}C$ was negative value, and TCR of 80$0^{\circ}C$ sintered speciman coexisted negative and positive value. But in case of speciman sintered at 90$0^{\circ}C$, TCR was positive value. As results of this fact, it was well known that the charge carrier contributied to electrical conduction in 1741 resistor system varied with sintering temperature.

• Journal of Powder Materials
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• v.11 no.5
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• pp.363-368
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• 2004

In the present study, the focus is on the analysis of the effect of the mold dimensions on the temperature distribution of a die during plasma activated sintering. The temperature distribution of a cylindrical mold with various dimensions was measured using K-type thermocouples. The temperature homogeneity of the die was studied based on the direction and dimensions of the die. A temperature gradient existed in the radial direction of the die during the plasma activated sintering. Also, the magnitude of the temperature gradient was increased with increasing sintering temperature. In the longitudinal direction, however, there was no temperature gradient. The temperature gradient of the die in the radial direction strongly depended on a ratio of die volume to punch area.

• Journal of the Korean Ceramic Society
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• v.49 no.2
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• pp.161-166
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• 2012

The temperature-rasing sintering method was used in this study to fabricate the aggregates of uniform pore size and distribution containing reject ash occurred in the thermal power plant. The spheric green aggregates made of reject ash were put into the box furnace of 800~$1000^{\circ}C$, heated with a heating rate of 5~$15^{\circ}C$/min to 1200~$1275^{\circ}C$, sintered for 10 min and then discharged out of the furnace to the room temperature. The input temperature, heating rate and sintering temperature increased the bloating phenomenon of the specimen, and the sintering temperature among them was the most effective factor. The aggregate manufactured at $1275^{\circ}C$ had the specific gravity of about 1.0 and water absorption of 1~2%, and the pores of 500~1,000 ${\mu}m$ were uniformly distributed across the whole specimen. Especially, the aggregates fabricated using the temperature-rasing sintering method in this study showed an excellent bloating properties and uniform microstructure without black core phenomenon which is typical for the bloated ceramics synthesized by direct sintering method.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.29 no.8
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• pp.476-482
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• 2016

Convectional PZT based piezoelectric ceramics have to sinter at high temperature about $1,200^{\circ}C$ for their suitable electrical properties. However, some issues: low temperature sintering piezoelectric ceramic composition and reliable internal electrode, have recently attracted a great deal of interest as a highly efficient multi-layered piezoelectric ceramics. In order to optimize low temperature sintering conditions of thick-film PMN-PZ-PT ceramic, it was investigated sintering and piezoelectric properties according to the change of $LiBiO_2$ contents. Thus, the superior piezoelectric properties were found at the pallet type PMN-PZ-PT optimized with low sintering processing at $925^{\circ}C$ including 7 wt% $LiBiO_2$ sintering aid. Consequentially, we successfully manufactured thick-film PMN-PZ-PT ceramics, which had superior piezoelectric and dielectric properties, with 5 wt% of $LiBiO_2$ sintering aid at temperature of $900^{\circ}C$.

• Korean Journal of Materials Research
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• v.32 no.4
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• pp.181-185
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• 2022

In this study, phase-pure titanium dioxide TiO₂ ceramics are sintered using standard high-temperature solid-state reaction technique at different temperatures (1,000, 1,100, 1,200, 1,300, 1,400 ℃). The effect of sintering temperature on the densification and impedance properties of TiO₂ ceramics is investigated. The bulk density and average grain size increase with the increase of sintering temperature. Impedance spectroscopy analysis (complex impedance Z^* and complex modulus M^*), performed in a broad frequency range from 100 Hz to 10 MHz, indicates that the TiO₂ ceramics are dielectrically heterogeneous, consisting of grains and grain boundaries. The complex impedance Z^* -plane indicates the resistance of grains of the TiO₂ ceramics increases with increasing sintering temperature, while that of grain boundaries develops in the opposing direction. The complex modulus M^*-plane shows a grain capacitance that seems to be independent of the sintering temperature, while that of the grain boundaries decreases with increasing sintering temperature. These results suggest that different sintering temperatures have effects on the microstructure, leading to changes in the impedance properties of TiO₂ ceramics.