• Journal of the Korean Ceramic Society
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• v.45 no.11
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• pp.701-706
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• 2008

High frequency dielectric ceramics have potential for applications in mobile and satellite communications systems at frequencies higher than 10GHz. The Ba$(Zn_{1/3}Ta_{2/3})O_3$ ceramics are known to have a high quality factor, a small temperature coefficient of the resonance frequency and a high dielectric constant. On the other hands, sintering at high temperature for extended time is required to obtain the ordered structure for high quality factor. In this study, the microwave dielectric properties of $ZrO_2$ and NiO-added Ba$(Zn_{1/3}Ta_{2/3})O_3$ ceramics prepared by solid-state reaction have been investigated. Adding $ZrO_2$ and NiO could effectively promote the densification even the case of decreasing the sintering time. At the surface of samples, secondary phase of Ba-Ta compounds was formed possibly due to the evaporation of ZnO, however, the interior of the samples remained as pure Ba$(Zn_{1/3}Ta_{2/3})O_3$. The samples sintered at $1600^{\circ}C$ for 2h exhibited 1:2 ordering of Zn and Ta cations. Excellent microwave dielectric properties of $Q{\cdot}f$(>96,000 GHz) and ${\varepsilon}_r$=30 has been obtained.

• Korean Journal of Materials Research
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• v.4 no.7
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• pp.775-782
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• 1994

Influence of $TiO_{2}$ addition on sintering behavior and microstructure of MgO-$ZrO_{2}$ composites was studied. $ZrO_{2}$ containing 3mol%Y203 was existed as a c-$ZrO_{2}$ phase due to the formation of solubility of MgO, $TiO_{2}$ and $ZrO_{2}$ when sintered $1400^{\circ}C$ for 2h. All the compositions employed exhibited a similar shrinkage behavior with an end-point shrinkage between 8.58 and 11.00%. The additlon of $TiO_{2}$ promoted densification and the bulk density of specimen containing 1.67wt% $TiO_{2}$ was 3.75g/$\textrm{cm}^3$(98% TD) when $1600^{\circ}C$ for 2h. The amount of solubilities of MgO and TiOz in $ZrO_{2}$ were 5.ti7wt% and 2.62wt%,respectively. They were partially segregated near $ZrO_{2}$ grain boundary in the form of Ti-compounds during cooling. This segregation resulted in the formation microcracks which decreased the bending strength.

• Korean Journal of Materials Research
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• v.24 no.9
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• pp.495-501
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• 2014

Despite having many attractive properties, $ZrO_2$ ceramic has a low fracture toughness which limits its wide application. One of the most obvious tactics to improve its mechanical properties has been to add a reinforcing agent to formulate a nanostructured composite material. Nanopowders of $ZrO_2$ and Cr were synthesized from $CrO_3$ and Zr powder by high energy ball milling for 10 h. Dense nanocrystalline $2/3Cr-ZrO_2$ composite was consolidated by a high-frequency induction heated sintering method within 5 min at $600^{\circ}C$ from mechanically synthesized powder. The method was found to enable not only rapid densification but also the inhibition of grain growth, preserving the nano-scale microstructure. Highly dense $2/3Cr-ZrO_2$ composite with relative density of up to 99.5% was produced under simultaneous application of a 1 GPa pressure and the induced current. The hardness and fracture toughness of the composite were 534 kg/mm2 and $7MPa{\cdot}m1/2$, respectively. The composite was determined to have good biocompatibility.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.30 no.6
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• pp.356-360
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• 2017

We investigated the phase evolution, microstructure, and microwave dielectric properties of Na- and Zr-doped $Ba(Mg_{0.5}W_{0.5})O_3$ [i.e., ($Ba_{1-2x}Na_{2x})(Mg_{0.5-x}Zr_xW_{0.5})O_3$] ceramics. $BaWO_4$ as a secondary phase was observed in all compositions, and it increased as the dopant concentration increased. All specimens revealed a dense microstructure. For the composition of x=0.01, polyhedral grains were observed. As the dopant concentration increased, the densification and the grain growth were promoted by a liquid phase. The quality factor($Q{\times}f_0$) decreased remarkably, whereas the dielectric constant (${\varepsilon}_r$) tended to decrease as the dopant concentration increased. The dielectric constant, quality factor, and temperature coefficient of the resonant frequency of the composition of x=0.01 sintered at $1,700^{\circ}C$ for 1 h were 18.6, 216,275 GHz, and $-22.0ppm/^{\circ}C$, respectively.

• Journal of the Korean Ceramic Society
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• v.45 no.9
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• pp.561-566
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• 2008

Carbon fiber fabric-silicon carbide composites were fabricated by liquid silicon infiltration (LSI) process. The porous two-dimensional carbon fiber fabric performs were prepared by 13 plies of 2D-plain-weave fabric in a three laminating method, [0/90], [${\pm}45$], [$0/90/{\pm}45$] lay-up, respectively. Before laminating, a thin pyrolytic carbon (PyC) layer deposited on the surface of 2D-plain weave fabric sheets as interfacial layer with $C_3H_8$ and $N_2$ gas at $900^{\circ}C$. A densification of the preforms for $C_f-Si-SiC$ matrix composite was achieved according to the LSI process at $1650^{\circ}C$ for 30 min. in vacuum atmosphere. The bending strength of the each composite were measured and the microstructural consideration was performed by a FE-SEM.

• Journal of the Korean Ceramic Society
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• v.34 no.3
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• pp.281-288
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• 1997

The effects of 0 to 6 mol% excess 91PbO-9WO3 addition on the microstructure and the dielectric pro-perties in 40Pb(Mg1/3Nb2/3)O3-30PbTiO3-30Pb(Mg1/2W1/2)O3 ternary system were investigated. Excess 91PbO-9WO3 addition enhanced densification at relatively lower temperature due to the formation of liquid phase. The dielectric constant of the specimen with standard composition was 16,400 and that of specimen with 1 mol% excess additive was the maximum of 18,500. And more than 2 mol% excess addition decreased dielec-tric constant. Specimens with 2~4 mol% 91PbO-9WO3 addition showed dual peak maxima in the tem-perature dependence of dielectric constant. In the specimens which have more than 5 mol% excess addition a new phase with W-rich composition was formed at grain boundary.

• Journal of the Korean Ceramic Society
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• v.28 no.10
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• pp.767-776
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• 1991

Effects of the additions of SiB4 as burnable poison to UO2 on the green density, densification, interdependence between density-grain growth and microstructure of sintered UO2 were studied. UO2 pellets were sintered in flowing hydrogen, at temperature 1200, 1350, 1500, and 168$0^{\circ}C$ for 3 hours and at 168$0^{\circ}C$ for 0, 1, 3, and 10 hours, respectively. Green densities were in the range of about 4.5~5.4 g/㎤, and decreased as the amount of SiB4 increased when green pellets were made by with use of a double action press at 1000 kg/$\textrm{cm}^2$. The density of sintered UO2 pellets was around 92~94% of the theoretical density and did not change significantly as the amount of SiB2 addition increased. However, the density of sintered pellets decreased with the increase in SiB4. The grain growth could be characterized in terms of two stages: Grain growth occurred with the increasing density in the first stage, whereas the second stage was characterized by the grain growth without increasing of density. A liquid phase was observed at grain boundaries and grain edges in the microstructure of sintered UO2 pellets with 5000 ppm and 10,000 ppm SiB4. This liquid, possible formed at about 168$0^{\circ}C$, did not enhance the shrinkage, but appeared to accelarate the grain growth. It seems that the second stage grain growth was due to the presence of pressurized insoluble trapped gas in isolated pores.

• Korean Journal of Materials Research
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• v.19 no.10
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• pp.550-554
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• 2009

Unreported dielectrics based on the binary system of MgO-SiO$_2$ were investigated as potential candidates for microwave dielectric applications, particularly those demanding a high fired density and high quality factors. Extensive dielectric compositions having different molar ratios of MgO to SiO$_2$, such as 2:1, 3:1, 4:1, and 5:1, were prepared by conventional solid state reactions between MgO and SiO$_2$. 1 mol% of V$_2$O$_5$ was added to aid sintering for improved densification. The dielectric compositions were found to consist of two distinguishable phases of Mg$_2$SiO$_4$ and MgO beyond the 2:1 compositional ratio, which determined the final physical and dielectric properties of the corresponding composite samples. The increase of the ratio of MgO to SiO$_2$ tended to improve fired density and quality factor (Q) without increasing grain size. As a promising composition, the 5MgO.SiO$_2$ sample sintered at 1400 $^{\circ}C$ exhibited a low dielectric constant of 7.9 and a high Q $\times$ f (frequency) value of $\sim$99,600 at 13.7 GHz.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.25 no.2
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• pp.114-120
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• 2012

In this research, we prepared Ga doped zinc oxide(ZnO:Ga, GZO) targets each difference sintering temperature $700^{\circ}C$, $800^{\circ}C$, and doping rate 1 wt.%, 2 wt.%, 3 wt.%. The characteristics of thin film on glass substrates which deposited by facing target sputtering in pure Ar atmosphere are reported. Ga doped zinc oxide film is attracted material through low resistivity, high transmittance, etc. When prepared target powder's structure was investigated by scanning electron microscope, densification and coarsening by driving force was observed. For each ZnO:Ga films with a $Ga_2O_3$ content of 3 wt.% at input power of 45W, the lowest resistivity of $9.967{\times}10^{-4}{\Omega}{\cdot}cm$ ($700^{\circ}C$) and $9.846{\times}10^{-4}{\Omega}{\cdot}cm$ ($800^{\circ}C$) was obtained. the carrier concentration and mobility were $4.09{\times}10^{20}cm^{-3}$($700^{\circ}C$), $4.12{\times}10^{20}cm^{-3}$($800^{\circ}C$) and $15.31cm^2/V{\cdot}s(700^{\circ}C)$, $12.51cm^2/V{\cdot}s(800^{\circ}C)$, respectively. And except 1 wt.% Ga doped ZnO thin film, average transmittance of these samples in the range 350-800 nm was over 80%.

• Journal of Powder Materials
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• v.15 no.3
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• pp.239-243
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• 2008

Ni-W(1-5 at.%) alloy rods were made by powder metallurgy process including powder mixing, compacting and subsequent sintering. Ni and W powder of appropriate compositions were mixed by a ball milling and isostatically pressed in a rubber mold into a rod. The compacted rods were sintered at $1000^{\circ}C-1150^{\circ}C$ at a reduced atmosphere for densification. The lattice parameters of Ni-W alloys were estimated by a high resolution neutron powder diffractometer. All sintered rods were found to have a face centered cubic structure without any impurity phase, but the diffraction peak locations were linearly shifted with increasing W content. The lattice parameter of a pure Ni rod was $3.5238{\AA}$ which is consistent with the value reported in JCPDS data. The lattice parameter of N-W alloy rods increased by $0.004{\AA}$ for 1 atomic % of W, which indicates the formation of a Ni-W solid solution due to the substitution of nickel atoms by tungsten atoms of larger size.