• JSTS:Journal of Semiconductor Technology and Science
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• 제2권4호
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• pp.259-267
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• 2002

We present a novel 3D fabrication method with single X-ray process utilizing an X-ray mask in which a micro-actuator is integrated. An X-ray absorber is electroplated on the shuttle mass driven by the integrated micro-actuator during deep X-ray exposures. 3D microstructures are revealed by development kinetics and modulated in-depth dose distribution in resist, usually PMMA. Fabrication of X-ray masks with integrated electrothermal xy-stage and electrostatic actuator is presented along with discussions on PMMA development characteristics. Both devices use $20-\mu\textrm{m}$-thick overhanging single crystal Si as a structural material and fabricated using deep reactive ion etching of silicon-on-insulator wafer, phosphorous diffusion, gold electroplating, and bulk micromachining process. In electrostatic devices, $10-\mu\textrm{m}-thick$ gold absorber on $1mm{\times}1mm$ Si shuttle mass is supported by $10-\mu\textrm{m}-wide$, 1-mm-long suspension beams and oscillated by comb electrodes during X-ray exposures. In electrothermal devices, gold absorber on 1.42 mm diameter shuttle mass is oscillated in x and y directions sequentially by thermal expansion caused by joule heating of the corresponding bent beam actuators. The fundamental frequency and amplitude of the electrostatic devices are around 3.6 kHz and $20\mu\textrm{m}$, respectively, for a dc bias of 100 V and an ac bias of 20 VP-P (peak-peak). Displacements in x and y directions of the electrothermal devices are both around $20{\;}\mu\textrm{m}$at 742 mW input power. S-shaped and conical shaped PMMA microstructures are demonstrated through X-ray experiments with the fabricated devices.

• 전기전자학회논문지
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• 제26권4호
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• pp.584-589
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• 2022

고전압 태양광 패널에서 단상 계통으로의 직류-교류 전력 변환을 위해 벅부스트 컨버터에 풀브리지 인버터를 종속적으로 연결하는 두 단계의 무변압기 인버터가 주로 사용된다. 태양광 패널의 큰 기생 커패시턴스에 기인하는 과도한 누설 전류를 피하기 위해 풀브리지 인버터는 단극성 PWM에 비해 훨씬 더 많은 전력 손실을 초래하는 양극성 PWM으로만 스위칭할 수 있다. 그런 낮은 효율을 개선하기 위해 본 논문은 벅부스트 컨버터에 회로 절연을 위한 IGBT와 다이오드를 하나씩 추가한 새로운 토폴로지를 제안한다. 제안된 회로 절연 방식은 누설 전류를 증가시키지 않으면서 풀브리지 인버터에서 단극성 PWM을 가능케 함으로써 전체 효율을 개선한다. 제안된 방법의 타당성은 컴퓨터 시뮬레이션과 전력 손실 계산을 통해 검증한다.