• Proceedings of the Korean Institute of Information and Commucation Sciences Conference
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• 2015.05a
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• pp.832-836
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• 2015

In this paper, a DC-DC converter is designed for logic process MTP (multi-time programmable) memory IPs using dual program voltage, which are used for analog trimming or storing chip IDs in sensor applications. The DC-DC converter supplies VPP (=5.25V), VNN (=-5.25V), and VNNL ($=2{\cdot}VNN/5$). It uses MOS capacitors and designed with only 3,3V devices. VPP and VNN are configured in two and five stages, respectively. And their pumping currents are $9.17{\mu}A$ and $9.7{\mu}A$, respectively.

• The Journal of Korea Institute of Information, Electronics, and Communication Technology
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• v.9 no.4
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• pp.419-427
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• 2016

In this paper, a 64b small-area MTP memory IP is designed. A VPPL (=VPP/3) regulator and a VNN (=VNN/3) charge pump are removed since the inhibit voltages of an MTP memory cell are all 0V instead of the conventional voltages of VPP/3 and VNN/3. Also, a VPP charge pump is removed since the VPP program voltage is supplied from an external pad. Furthermore, a VNN charge pump is designed to provide its voltage of -VPP as a one-stage negative charge pump using the VPP voltage. The layout size of the designed 64b MTP memory IP with MagnaChip's $0.18{\mu}m$ BCD process is $377.585{\mu}m{\times}328.265{\mu}m$ (=0.124mm2). Its DC-DC converter related layout size is 76.4 percent smaller than its conventional counterpart.

• The Journal of Korea Institute of Information, Electronics, and Communication Technology
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• v.9 no.1
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• pp.120-131
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• 2016

In this paper, a 512b MTP memory IP is designed by using MTP memory cells which are written by the FN (Fowler-Nordheim) tunneling method with only MV (medium voltage) devices of 5V which uses the back-gate bias, that is VNN (negative voltage). The used MTP cell consists of a CG (control gate) capacitor, a TG (tunnel gate) transistor, and a select transistor. To reduce the size of the MTP memory cell, just two PWs (P-wells) are used: one for the TG and the select transistors; and the other for the CG capacitor. In addition, just one DNW (deep N-well) is used for the entire 512b memory cell array. VPP and VNN generators supplying pumping voltages of ${\pm}8V$ which are insensitive to PVT variations since VPP and VNN level detectors are designed by a regulated voltage, V1V (=1V), provided by a BGR voltage generator.