• Current Photovoltaic Research
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• 제2권2호
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• pp.41-47
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• 2014

Extensive investigation on silicon based thin film reveals a wide range of film characteristics, from low optical gap to high optical gap, from amorphous to micro-crystalline silicon etc. Fabrication of single junction, tandem and triple junction solar cell with suitable materials, indicate that fabrication of solar cell of a relatively moderate efficiency is possible with a better light induced stability. Due to these investigations, various competing materials like wide band gap silicon carbide and silicon oxide, low band gap micro-crystalline silicon and silicon germanium etc were also prepared and applied to the solar cells. Such a multi-junction solar cell can be a technologically promising photo-voltaic device, as the external quantum efficiency of such a cell covers a wider spectral range.

• 제어로봇시스템학회:학술대회논문집
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• 제어로봇시스템학회 2003년도 ICCAS
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• pp.1547-1552
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• 2003

In this paper, we present a planar single-crystalline silicon x-axis micro-gyroscope fabricated with a perfectly aligned vertical actuation combs on one silicon wafer, using the extended SBM technology. The fabricated x-axis micro-gyroscope has the resolution of 0.1 deg/sec, the bandwidth of 100 Hz. These research results allow integrating 6 axes inertial measurement (3 accelerations and 3 angular rates) on the same silicon substrate using the same process for the first time.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2006년도 추계학술대회 논문집 Vol.19
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• pp.109-109
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• 2006

Screen printing (SP) metal contact is typically applied to the solar cells for mass production. However, SP metal contact has low aspect ratio, low accuracy, hard control of the substrate penetration and unclean process. On the other hand, photo lithograpy (PL) metal contact can reduce defects by metal contact. In this investigation, PL metal contact was obtained the multi-layer structure of Ti/Pd/Ag by e-beam process. We applied SP metal contact and PL metal contact to single crystalline silicon solar cells, and demonstrated the difference of conversion efficiency. Because PL metal contact silicon solar cell has Jsc (short circuit current density) better than silicon solar cell applied SP metal contact.

• 한국세라믹학회지
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• 제40권1호
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• pp.104-108
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• 2003

스크래칭 시험(scratching test)을 이용하여 단결정 실리콘의 수직하중에 대한 마찰계수, AE(Acoustic Emission) 신호와 긁힌 자취의 미세균열을 관찰하고 그 결정구조를 분석하였다. 스크래칭 시험은 하중인가속도(loading rate)를 100N/min으로 하고 스크래칭 속도(scratching speed)를 1, 3, 6, 10mm/min의 4가지로 하여 최대 30N이 될 때까지 행하였다. 그 결과, 수직하중 또는 스크래칭 속도가 증가할 때 마찰계수, AE, 균열밀도는 증가하는 경향을 나타내었다. 스크래칭, 자취에 대한 마이크로 라만 분광법을 이용한 결정구조 분석결과, 스크래칭 속도가 느린 조건에서 압력인가에 따른 실리콘의 다이아몬드 구조에서 다른 고압상의 구조로의 상전이 현상을 관찰할 수 있었다.

• 대한전기학회논문지:전기물성ㆍ응용부문C
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• 제55권12호
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• pp.565-569
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• 2006

Plasma enhanced chemical vapor deposition(PECVD) is a well established technique for the deposition of hydrogenated film of silicon nitride (SiNx:H), which is commonly used as an antireflection coating as well as passivating layer in crystalline silicon solar cell. PECVD-SiNx:H films were investigated by varying the deposition and annealing conditions to optimize for the application in silicon solar cells. By varying the gas ratio (ammonia to silane), the silicon nitride films of refractive indices 1.85 - 2.45 were obtained. The film deposited at $450^{\circ}C$ showed the best carrier lifetime through the film deposition rate was not encouraging. The film deposited with the gas ratio of 0.57 showed the best carrier lifetime after annealing at a temperature of $800^{\circ}C$. The single crystalline silicon solar cells fabricated in conventional industrial production line applying the optimized film deposition and annealing conditions on large area substrate of size $125mm{\times}125mm$ (pseudo square) was found to have the conversion efficiencies as high as 17.05 %. Low cost and high efficiency silicon solar cells fabrication sequence has also been explained in this paper.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2004년도 춘계학술대회 논문집 반도체 재료 센서 박막재료 전자세라믹스
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• pp.85-88
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• 2004

Mono-crystalline silicon(mono-Si) is both abundant in our environment and an excellent material for Si device applications. However, single crystalline silicon solar cell has been considered to be expensive for terrestrial applications. For that reason, the last few years have seen very rapid progress in the research and development activities of layer transfer(LT) processes. Thin film Si layers which can be detached from a reusable mono-Si wafers served as a substrate for epitaxial growth. The epitaxial films have a very high efficiency potential. LT technology is a promising approach to reduce fabrication cost with high efficiency at large scale since expensive Si substrate can be recycled. Low quality Si can be used as a substrate. Therefore, we propose one of the major technologies on fabricating thin film Si substrate using a LT. In this paper, we study the LT method using the electrochemical etching(ECE) and solid edge.

• 신재생에너지
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• 제9권2호
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• pp.30-39
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• 2013

Multi-crystalline silicon solar cells is not exist a specific crystal direction different from single crystalline silicon solar cells. In functional materials, therefore, isotropic wet etching of mc-Si solar cell is easy the acid solution rather than the alkaline solution. The reflectance of wet texturing process is about 25% and the reflectance of RIE texturing process is achieved less than 10%. In addition, wet texturing has many disadvantages as well as reflectance. So wet texturing process has been replaced by a RIE texturing process. In order to apply BIPV, RIE and wet textured multi-crystalline silicon solar cell modules was manufactured by different kind of EVA sheet. Moreover, in case of BIPV, the short circuit current characteristics according to the angle of incidence is more important, because the installation of BIPV is fixed location. In this study, we has measured SEM image and I-V curve of RIE and wet textured silicon solar cell and PV module. Also we has analyzed quantum efficiency characteristics of RIE and wet textured silicon solar cell for PV modules depending on incidence angle.

• 대한전기학회:학술대회논문집
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• 대한전기학회 2003년도 추계학술대회 논문집 전기물성,응용부문
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• pp.49-52
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• 2003

Single crystalline silicon (SCS) was adopted for a reliable micromirror array of biochip fabrication applications. SCS has excellent mechanical properties and smooth surface, which is the best material for micromirror devices. The mirror array has $16{\times}16$ micromirrors and each mirror has a $120{\mu}m{\times}100{\mu}m$ reflective surface. The micromirror has simple torsional beam springs and electrostatic force was used for driving. The designed tilting angle was $9.6^{\circ}$, and the tilting angles were measured according to applied voltages. The surface roughness was measured by a laser profiler. The response time was measured using He-Ne laser and position sensitive diode (PSD), and the lifetime was checked for reliability proof.

• 한국정보통신설비학회:학술대회논문집
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• 한국정보통신설비학회 2003년도 하계학술대회
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• pp.93-95
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• 2003

We have designed and fabricated a micromirror array using single crystalline silicon (SCS) for data communication applications. The mirror array has $16{\times}16$ micromirrors and each mirror has $120{\mu}m{\times}100{\mu}m$ reflective surface. Electrostatic force was adopted as a driving mechanism. The spring dimensions were determined using relationship between spring dimensions and driving voltage. The designed tilting angle was $9.6^{\circ}$, and measured tilting angle according to applied voltages were experimented. The response time was measured using He-Ne laser and position sensitive diode (PSD), and lifetime was checked for reliability proof.

• 한국전기전자재료학회논문지
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• 제23권2호
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• pp.98-102
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• 2010

This paper describes that single crystalline 3C-SiC (cubic silicon carbide) thin films have been deposited on carbonized Si(100) substrates using hexamethyldisilane (HMDS, $Si_2(CH_3){_6}$) as a safe organosilane single precursor and a nonflammable mixture of Ar and $H_2$ gas as the carrier gas by APCVD at $1280^{\circ}C$. The deposition was performed under various conditions to determine the optimized growth condition. The crystallinity of the 3C-SiC thin film was analyzed by XRD (X-ray diffraction). The surface morphology was also observed by AFM (atomic force microscopy) and voids between SiC and Si interfaces were measured by SEM (scanning electron microscopy). Finally, residual strain and hall mobility was investigated by surface profiler and hall measurement, respectively. From these results, the single crystalline 3C-SiC film had a good crystal quality without defects due to viods, a low residual stress, a very low roughness.