• Title/Summary/Keyword: Single side Final polishing system

Search Result 3, Processing Time 0.018 seconds

A Study of Material Removal Characteristics by Friction Monitoring System of Sapphire Wafer in Single Side DMP (사파이어 웨이퍼 DMP에서 마찰력 모니터링을 통한 재료 제거 특성에 관한 연구)

  • Jo, Wonseok;Lee, Sangjik;Kim, Hyoungjae;Lee, Taekyung;Lee, Seongbeom
    • Tribology and Lubricants
    • /
    • v.32 no.2
    • /
    • pp.56-60
    • /
    • 2016
  • Sapphire has a high hardness and strength and chemical stability as a superior material. It is used mainly as a material for a semiconductor as well as LED. Recently, the cover glass industry used by a sapphire is getting a lot of attention. The sapphire substrate is manufactured through ingot sawing, lapping, diamond mechanical polishing (DMP) and chemical mechanical polishing (CMP) process. DMP is an important process to ensure the surface quality of several nm for CMP process as well as to determine the final form accuracy of the substrate. In DMP process, the material removal is achieved by using the mechanical energy of the relative motion to each other in the state that the diamond slurry is disposed between the sapphire substrate and the polishing platen. The polishing platen is one of the most important factors that determine the material removal characteristics in DMP. Especially, it is known that the geometric characteristics of the polishing platen affects the material removal amount and its distribution. This paper investigated the material removal characteristics and the effects of the polishing platen groove in sapphire DMP. The experiments were preliminarily carried out to evaluate the sapphire material removal characteristics according to process parameters such as pressure, relative velocity and so on. In the experiment, the monitoring apparatus was applied to analyze process phenomena in accordance with the processing conditions. From the experimental results, the correlation was analyzed among process parameters, polishing phenomena and the material removal characteristics. The material removal equation based on phenomenological factors could be derived. And the experiment was followed to investigate the effects of platen groove on material removal characteristics.

Purification and Characterization of Paclitaxel from Plant Cell Cultures of Taxus chinensis in Large-Scale Process (식물세포 Taxus chinensis 배양으로부터의 Paclitaxel 대량 정제 및 특성)

  • 김진현;기은숙;민범찬;최형균;홍승서;이현수
    • KSBB Journal
    • /
    • v.15 no.5
    • /
    • pp.537-540
    • /
    • 2000
  • In developing a HPLC purification process, it was hoped that a single chromatographic system would be sufficient to abtain pure paclitaxel in high yield. However, no such system was found, due in part to the complex taxoid profile of crude paclitaxel and to the rigorous nature of the product specification. A two step HPLC purification was adopted using reverse-phase separation on C(sub)18 as a first step, and normal-phase separation on silica as the final polishing step. Impurity profiles were established and maintained for paclitaxel, which identified and quantified each impurity observed in purified paclitaxel from these two steps, all impurities at or above 0.1% were identified. Results provide information for improving the quality control of paclitaxel production.

  • PDF