• 폴리머
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• 제24권1호
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• pp.128-132
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• 2000

Polycaprolactone (PCL) 블록의 함량이 62.7 wt%인 PCL-폴리아미드 블록공중합체와 poly(vinyl chloride) (PVC)의 상용거동을 시차주사열량계로 열적 성질을 관찰하여 조사하고, 블렌드물의 인장물성을 측정하였다. PCL과 PVC 세그먼트는 상용성을 가졌으며, PVC의 함량이 많은 경우 PCL의 결정화가 방해받아 PCL과 PVC 세그먼트로 구성된 비결정성 균일상이 형성됨을 알 수 있었다. PCL/PVC 균일 비결정상과 폴리아미드의 결정상이 병존하는 경우 균일 비결정상의 유리전이온도와 결정상의 녹는점 사이의 온도 영역에서 블렌드물은 고무탄성을 가졌다.

• 폴리머
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• 제26권6호
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• pp.737-744
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• 2002

결정성 폴리부틸렌나프탈레이트 (PBN)와 비결정성 폴리비닐페놀 (PVPh)로 구성된 2 성분계 고분자 블렌드의 열역학적 상용성을 시차주사열분석 (DSC)과 푸리에변환 적외선 (FTIR) 분광분석으로 조사하였다. PBN/PVPh 블렌드의 DSC 측정 결과로부터 블렌드 전 조성에서 단일 유리전이온도 (T$_{g}$ )가 확인되었으며, 블렌드 내의 PVPh 조성이 증가함에 따라 PBN 결정질의 용융점(T$_{m}$ ) 강하가 관찰되었다. 고분자 블렌드의 단일 T$_{g}$ 및 T$_{m}$ 강하 현상은 PBN/PVPh 블렌드가 분자 수준에서의 열역학적 상용성이 있음을 보여준다. PBN의 에스테르 카르보닐기와 PVPh의 히드록실기 사이에 강한 분자 간 수소결합이 형성됨을 FTIR 분석에 의하여 확인할 수 있었다.

• E2M - 전기 전자와 첨단 소재
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• 제8권3호
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• pp.362-371
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• 1995

• 한국정보디스플레이학회:학술대회논문집
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• 한국정보디스플레이학회 2009년도 9th International Meeting on Information Display
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• pp.378-381
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• 2009

As a Joule-heat source, a conductive Mo layer was used to crystallize amorphous silicon for AMOLED backplanes. This Joule-heating induced crystallization (JIC) process could produce poly-Si having a grain size ranging from tens of nanometers to greater than several micrometers. Here, the blanket (single-shot whole-plane) crystallization could be achieved on the $2^{nd}$ and the $4^{th}$ generation glass substrate.

• 한국전기전자재료학회논문지
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• 제13권2호
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• pp.95-100
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• 2000

For the well-controlled growing in-situ heavily phosphorus doped polycrystalline Si films directly on Si wafer by reduced pressure chemical vapor deposition, a study is made of the two step growth. When in-situ heavily phosphorus doped Si films were deposited directly on Si (100) wafer, crystal structure in the film is not unique, that is, the single crystal to polycrystalline phase transition occurs at a certain thickness. However, the well-controlled polycrtstalline Si films deposited by two step growth grew directly on Si wafers. Moreover, the two step growth, which employs crystallization of grew directly on Si wafers. Moreover, the two step growth which employs crystallization of amorphous silicon layer grown at low temperature, reveals crucial advantages in manipulating polycrystal structures of in-situ phosphorous doped silicon.

• Bulletin of the Korean Chemical Society
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• 제18권12호
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• pp.1249-1256
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• 1997

Single phase La1-xSrxCoO3 (x≤0.2) was synthesized as a uniform sized 100 nm particulates with relatively high surface area of 20-30 m2/g, at low temperature (≥600 ℃), from a polymeric gel precursors prepared by using poly(vinyl alcohol) as homogenizer. No minor phase developed during the crystallization when polymer/metal mole ratio was higher than 3. As the polymer/metal mole ratio was raised in the gel, the amount of carbonaceous residues in the amorphous solid precursor prepared by heating the gel at 300 ℃ increased. Most of the residues were eliminated by exothermic thermal decomposition around 400 ℃. The amount of residual carbon (less than 1%) left in the crystalline La1-xSrxCoO3 decreased as more polymer was used, eliminating detrimental effect which might be posed by using large amount of organic homogenizer. The crystal structure of La1-xSrxCoO3 synthesized at temperature lower than 800 ℃ was observed to be shifted from rhombohedral to more symmetric cubic. The structure shifted back to rhombohedral as the cubic sample was annealed at 1000 ℃.

• 멤브레인
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• 제27권2호
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• pp.147-153
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• 2017

본 연구에서는 poly(ethylene oxide) (PEO)와 poly(ethylene-co-vinyl acetate) (EVA) 혼합으로 구성된 막을 통한 단일기체($N_2$, $O_2$, $CO_2$)의 투과 성질을 조사하였다. FT-IR 분석 결과 제조된 막에서 새로운 흡수피크는 보이지 않았는데, 이것은 PEO와 EVA가 물리적으로 혼합되었음을 나타낸다. SEM 관찰에서는 PEO/EVA 혼합 매트릭스에서 EVA 함량이 증가함에 따라 PEO의 결정상이 감소함을 보여 주었다. DSC 분석결과 PEO/EVA 혼합막의 결정화도는 EVA 함량이 증가함에 따라 감소하였다. 기체투과 실험은 4~8 bar의 공급압력에서 이루어졌다. PEO/EVA 혼합막에서 $CO_2$의 투과도는 공급 압력 증가에 따라 증가하였다. 그러나 $N_2$와 $O_2$의 투과도는 공급 압력에 무관하였다. 반면에, PEO/ EVA 혼합막의 모든 기체의 투과도는 반결정성 PEO에서 무정형 EVA의 함량이 증가함에 따라 증가하였다. 특히, 40 wt% EVA 혼합막은 64 Barrer의 $CO_2$ 투과도와 61.5의 $CO_2/N_2$ 이상선택도를 보였다. 높은 $CO_2$ 투과도와 $CO_2/N_2$ 이상선택도는 PEO의 극성 에테르기 또는 EVA의 극성 에스터기와 극성 $CO_2$ 간의 강한 친화성에 기인한다.

• 한국진공학회지
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• 제12권S1호
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• pp.67-69
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• 2003

The magnetic properties of single- and poly-crystalline $La_{0.7}Sr_{0.3}MnO_3/Pr_{0.65}Ca_{0.35}MnO_3$ multilayered (ML) films, and composite (CP) $(La_{0.7}Sr_{0.3})_{0.5}(Pr_{0.65}Ca_{0.35}_{0.5}MnO_3$ films, prepared by laser ablation, have been investigated in a wide temperature range. It was shown that the transformation from an incoherent to a coherent interface in the ML films leads to an enhancement of the ferromagnetic coupling between layers and to a single-phase magnetic transition. The amorphous CP films demonstrate a paramagnetic behavior of the magnetization with a sharp peak at $T_{G}\approx$45 K, which was interpreted as the formation of Griffiths phase. A short-term annealing at $750^{\circ}C$ induced the complete crystallization of film, and a recovery of the ferromagnetic and the metal-insulator transitions.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2013년도 제44회 동계 정기학술대회 초록집
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• pp.470-470
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• 2013

Recently, active materials such as amorphous silicon (a-Si), poly crystalline silicon (poly-Si), transition metal oxide semiconductors (TMO), and organic semiconductors have been demonstrated for flexible electronics. In order to apply flexible devices on the polymer substrates, all layers should require the characteristic of flexibility as well as the low temperature process. Especially, pentacene thin film transistors (TFTs) have been investigated for probable use in low-cost, large-area, flexible electronic applications such as radio frequency identification (RFID) tags, smart cards, display backplane driver circuits, and sensors. Since pentacene TFTs were studied, their electrical characteristics with varying single variable such as strain, humidity, and temperature have been reported by various groups, which must preferentially be performed in the flexible electronics. For example, the channel mobility of pentacene organic TFTs mainly led to change in device performance under mechanical deformation. While some electrical characteristics like carrier mobility and concentration of organic TFTs were significantly changed at the different temperature. However, there is no study concerning multivariable. Devices actually worked in many different kinds of the environment such as thermal, light, mechanical bending, humidity and various gases. For commercialization, not fewer than two variables of mechanism analysis have to be investigated. Analyzing the phenomenon of shifted characteristics under the change of multivariable may be able to be the importance with developing improved dielectric and encapsulation layer materials. In this study, we have fabricated flexible pentacene TFTs on polymer substrates and observed electrical characteristics of pentacene TFTs exposed to tensile and compressive strains at the different values of temperature like room temperature (RT), 40, 50, $60^{\circ}C$. Effects of bending and heating on the device performance of pentacene TFT will be discussed in detail.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2012년도 제42회 동계 정기 학술대회 초록집
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• pp.341-341
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• 2012

Recently, oxide semi-conductor materials have been investigated as promising candidates replacing a-Si:H and poly-Si semiconductor because they have some advantages of a room-temperature process, low-cost, high performance and various applications in flexible and transparent electronics. Particularly, amorphous indium-gallium-zinc-oxide (a-IGZO) is an interesting semiconductor material for use in flexible thin film transistor (TFT) fabrication due to the high carrier mobility and low deposition temperatures. In this work, we demonstrated improvement of flexibility in IGZO TFTs, which were fabricated on polyimide (PI) substrate. At first, a thin poly-4vinyl phenol (PVP) layer was spin coated on PI substrate for making a smooth surface up to 0.3 nm, which was required to form high quality active layer. Then, Ni gate electrode of 100 nm was deposited on the bare PVP layer by e-beam evaporator using a shadow mask. The PVP and $Al_2O_3$ layers with different thicknesses were used for organic/inorganic multi gate dielectric, which were formed by spin coater and atomic layer deposition (ALD), respectively, at $200^{\circ}C$. 70 nm IGZO semiconductor layer and 70 nm Al source/drain electrodes were respectively deposited by RF magnetron sputter and thermal evaporator using shadow masks. Then, IGZO layer was annealed on a hotplate at $200^{\circ}C$ for 1 hour. Standard electrical characteristics of transistors were measured by a semiconductor parameter analyzer at room temperature in the dark and performance of devices then was also evaluated under static and dynamic mechanical deformation. The IGZO TFTs incorporating hybrid gate dielectrics showed a high flexibility compared to the device with single structural gate dielectrics. The effects of mechanical deformation on the TFT characteristics will be discussed in detail.