• Polymer(Korea)
• /
• v.24 no.1
• /
• pp.128-132
• /
• 2000

The miscibility between poly(vinyl chloride) (PVC) and polycaprolactone (PCL)-polyamide block copolymer whose content of PCL block is 62.7 wt%, was studied by differential scanning calorimetry. The PCL segment in the block copolymer and PVC has the miscibility showing single glass transition temperature (T$_{g}$). The miscible PVC molecule inhibited the crystallization of PCL segment, making an amorphous homogeneous phase of PCL and PVC segments at high PVC content. The blends had rubber elasticity at the temperature range between the T$_{g}$ of amorphous homogeneous phase of PCL and PVC segments and the melting temperature of polyamide segment, when both phases coexist.ist.

• Polymer(Korea)
• /
• v.26 no.6
• /
• pp.737-744
• /
• 2002

Thermodynamic miscibility of the binary blends composed of semi-crystalline poly (butylene 2,6-naphthalate) (PBN) and amorphous poly (4-vinylphenol) (PVPh) was investigated using differential scanning calorimetry (DSC) and Fourier transform infrared (FTIR) spectroscopy. DSC scan results showed that there was a single glass transition temperature (T$\_$g/) for each blend. Crystalline melting temperature (T$\_$m/) depression of the PBN in the blends was also observed with the increase of PVPh content. Both results of the single T$\_$g/ and the depression of T$\_$m/ for the PBN/PVPh blends indicate that the blends are thermodynamically miscible at the molecular level. FTIR spectroscopic analysis confirmed that strong intermolecular hydrogen bonding interactions between the ester carbonyl groups of the PBN and the hydroxyl groups of the PVPh are occurred.

• Electrical & Electronic Materials
• /
• v.8 no.3
• /
• pp.362-371
• /
• 1995

• 한국정보디스플레이학회:학술대회논문집
• /
• 2009.10a
• /
• pp.378-381
• /
• 2009

As a Joule-heat source, a conductive Mo layer was used to crystallize amorphous silicon for AMOLED backplanes. This Joule-heating induced crystallization (JIC) process could produce poly-Si having a grain size ranging from tens of nanometers to greater than several micrometers. Here, the blanket (single-shot whole-plane) crystallization could be achieved on the $2^{nd}$ and the $4^{th}$ generation glass substrate.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
• /
• v.13 no.2
• /
• pp.95-100
• /
• 2000

For the well-controlled growing in-situ heavily phosphorus doped polycrystalline Si films directly on Si wafer by reduced pressure chemical vapor deposition, a study is made of the two step growth. When in-situ heavily phosphorus doped Si films were deposited directly on Si (100) wafer, crystal structure in the film is not unique, that is, the single crystal to polycrystalline phase transition occurs at a certain thickness. However, the well-controlled polycrtstalline Si films deposited by two step growth grew directly on Si wafers. Moreover, the two step growth, which employs crystallization of grew directly on Si wafers. Moreover, the two step growth which employs crystallization of amorphous silicon layer grown at low temperature, reveals crucial advantages in manipulating polycrystal structures of in-situ phosphorous doped silicon.

• Bulletin of the Korean Chemical Society
• /
• v.18 no.12
• /
• pp.1249-1256
• /
• 1997

Single phase La1-xSrxCoO3 (x≤0.2) was synthesized as a uniform sized 100 nm particulates with relatively high surface area of 20-30 m2/g, at low temperature (≥600 ℃), from a polymeric gel precursors prepared by using poly(vinyl alcohol) as homogenizer. No minor phase developed during the crystallization when polymer/metal mole ratio was higher than 3. As the polymer/metal mole ratio was raised in the gel, the amount of carbonaceous residues in the amorphous solid precursor prepared by heating the gel at 300 ℃ increased. Most of the residues were eliminated by exothermic thermal decomposition around 400 ℃. The amount of residual carbon (less than 1%) left in the crystalline La1-xSrxCoO3 decreased as more polymer was used, eliminating detrimental effect which might be posed by using large amount of organic homogenizer. The crystal structure of La1-xSrxCoO3 synthesized at temperature lower than 800 ℃ was observed to be shifted from rhombohedral to more symmetric cubic. The structure shifted back to rhombohedral as the cubic sample was annealed at 1000 ℃.

• Membrane Journal
• /
• v.27 no.2
• /
• pp.147-153
• /
• 2017

In this study, we investigated permeation properties of single gas ($N_2$, $O_2$, $CO_2$) through membranes composed of poly(ethylene oxide) (PEO) and poly(ethylene-co-vinyl acetate) (EVA) blend. The prepared membranes showed no new absorbance peaks, which indicate the physical blending of PEO and EVA by FT-IR analysis. SEM observation showed that the crystalline phase of PEO decreased with increasing EVA content in the PEO/EVA mixed matrix. DSC analysis showed that the crystallinity of the PEO/EVA blend membrane decreased with increasing EVA content. Gas permeation experiment was performed with various feed pressure (4~8 bar). The permeability increased in the following order: $N_2$ < $O_2$ < $CO_2$. The permeability of $CO_2$ in PEO/EVA blend membranes were increased with increasing feed pressure, However, the permeability of $N_2$ and $O_2$ were independent of feed pressure. On the other hand, the permeability of all the gases in PEO/EVA blend membranes increased with increasing amorphous EVA content in semi-crystalline PEO. In particular, the blend membrane with 40 wt% EVA showed $CO_2$ permeability of 64 Barrer and $CO_2/N_2$ ideal selectivity of 61.5. The high $CO_2$ permeability and $CO_2/N_2$ ideal selectivity are attributed to strong affinity between the polar ether groups of PEO or the polar ester groups of EVA and polar $CO_2$.

• Journal of the Korean Vacuum Society
• /
• v.12 no.S1
• /
• pp.67-69
• /
• 2003

The magnetic properties of single- and poly-crystalline $La_{0.7}Sr_{0.3}MnO_3/Pr_{0.65}Ca_{0.35}MnO_3$ multilayered (ML) films, and composite (CP) $(La_{0.7}Sr_{0.3})_{0.5}(Pr_{0.65}Ca_{0.35}_{0.5}MnO_3$ films, prepared by laser ablation, have been investigated in a wide temperature range. It was shown that the transformation from an incoherent to a coherent interface in the ML films leads to an enhancement of the ferromagnetic coupling between layers and to a single-phase magnetic transition. The amorphous CP films demonstrate a paramagnetic behavior of the magnetization with a sharp peak at $T_{G}\approx$45 K, which was interpreted as the formation of Griffiths phase. A short-term annealing at $750^{\circ}C$ induced the complete crystallization of film, and a recovery of the ferromagnetic and the metal-insulator transitions.

• Proceedings of the Korean Vacuum Society Conference
• /
• 2013.02a
• /
• pp.470-470
• /
• 2013

Recently, active materials such as amorphous silicon (a-Si), poly crystalline silicon (poly-Si), transition metal oxide semiconductors (TMO), and organic semiconductors have been demonstrated for flexible electronics. In order to apply flexible devices on the polymer substrates, all layers should require the characteristic of flexibility as well as the low temperature process. Especially, pentacene thin film transistors (TFTs) have been investigated for probable use in low-cost, large-area, flexible electronic applications such as radio frequency identification (RFID) tags, smart cards, display backplane driver circuits, and sensors. Since pentacene TFTs were studied, their electrical characteristics with varying single variable such as strain, humidity, and temperature have been reported by various groups, which must preferentially be performed in the flexible electronics. For example, the channel mobility of pentacene organic TFTs mainly led to change in device performance under mechanical deformation. While some electrical characteristics like carrier mobility and concentration of organic TFTs were significantly changed at the different temperature. However, there is no study concerning multivariable. Devices actually worked in many different kinds of the environment such as thermal, light, mechanical bending, humidity and various gases. For commercialization, not fewer than two variables of mechanism analysis have to be investigated. Analyzing the phenomenon of shifted characteristics under the change of multivariable may be able to be the importance with developing improved dielectric and encapsulation layer materials. In this study, we have fabricated flexible pentacene TFTs on polymer substrates and observed electrical characteristics of pentacene TFTs exposed to tensile and compressive strains at the different values of temperature like room temperature (RT), 40, 50, $60^{\circ}C$. Effects of bending and heating on the device performance of pentacene TFT will be discussed in detail.

• Proceedings of the Korean Vacuum Society Conference
• /
• 2012.02a
• /
• pp.341-341
• /
• 2012

Recently, oxide semi-conductor materials have been investigated as promising candidates replacing a-Si:H and poly-Si semiconductor because they have some advantages of a room-temperature process, low-cost, high performance and various applications in flexible and transparent electronics. Particularly, amorphous indium-gallium-zinc-oxide (a-IGZO) is an interesting semiconductor material for use in flexible thin film transistor (TFT) fabrication due to the high carrier mobility and low deposition temperatures. In this work, we demonstrated improvement of flexibility in IGZO TFTs, which were fabricated on polyimide (PI) substrate. At first, a thin poly-4vinyl phenol (PVP) layer was spin coated on PI substrate for making a smooth surface up to 0.3 nm, which was required to form high quality active layer. Then, Ni gate electrode of 100 nm was deposited on the bare PVP layer by e-beam evaporator using a shadow mask. The PVP and $Al_2O_3$ layers with different thicknesses were used for organic/inorganic multi gate dielectric, which were formed by spin coater and atomic layer deposition (ALD), respectively, at $200^{\circ}C$. 70 nm IGZO semiconductor layer and 70 nm Al source/drain electrodes were respectively deposited by RF magnetron sputter and thermal evaporator using shadow masks. Then, IGZO layer was annealed on a hotplate at $200^{\circ}C$ for 1 hour. Standard electrical characteristics of transistors were measured by a semiconductor parameter analyzer at room temperature in the dark and performance of devices then was also evaluated under static and dynamic mechanical deformation. The IGZO TFTs incorporating hybrid gate dielectrics showed a high flexibility compared to the device with single structural gate dielectrics. The effects of mechanical deformation on the TFT characteristics will be discussed in detail.