• Title/Summary/Keyword: Single poly

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Effect of Ethidium on the Formation of Poly(dA)·[poly(dt)]₂Triplex: A Kinetic Study by Optical Spectroscopic Methods

  • 이길준;현경미;조태섭;Kim, Seog K.;정맹준;한상욱
    • Bulletin of the Korean Chemical Society
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    • v.19 no.4
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    • pp.444-449
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    • 1998
  • The kinetics of the formation of triplex $poly(dA){\cdot}[poly(dT)]_2$ from poly(dA)·poly(dT) and poly(dT) is examined by various optical spectroscopic methods, including absorption, circular and linear dichroism (LD) spectroscopy. In the pseudo first order condition, where the poly(dT) concentration is kept lower than that of duplex, the association of the poly(dT) is enhanced by the presence of ethidium; the rate constant is proportional to the amount of ethidium in the mixture. When the concentration of the duplex and the single strand is the same, a spectral change is explained by double exponential curves, indicating that at least two steps are involved, the fast association and slow rearrangement steps. In contrast to the pseudo first order kinetics, the association step in an equimolar condition is not affected by the presence of ethidium. In the rearrangement step, the magnitude of LD decreases with an increase in ethidium concentration, suggesting that the bending of polynucleotide around the intercalation site occurs in the rearrangement step.

An Analog Memory Fabricated with Single-poly Nwell Process Technology (일반 싱글폴리 Nwell 공정에서 제작된 아날로그 메모리)

  • Chai, Yong-Yoong
    • The Journal of the Korea institute of electronic communication sciences
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    • v.7 no.5
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    • pp.1061-1066
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    • 2012
  • A digital memory has been widely used as a device for storing information due to its reliable, fast and relatively simple control circuit. However, the storage of the digital memory will be limited by the inablility to make smaller linewidths. One way to dramatically increase the storeage capability of the memory is to change the type of stored data from digital to analog. The analog memory fabricated in a standard single poly 0.6um CMOS process has been developed. Single cell and adjacent circuit block for programming have been designed and characterized. Applications include low-density non-volatile memory, control of redundancy in SRAM and DRAM memories, ID or security code registers, and image and sound memory.

Device Physics of Low Temperature Poly-Si and Single Grain TFTs

  • Migliorato, P.;Yan, F.;Mo, Y.;Hong, Y.;Ishihara, R.
    • 한국정보디스플레이학회:학술대회논문집
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    • 2004.08a
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    • pp.309-314
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    • 2004
  • Static and transient behaviour of Low Temperature Poly-Si TFTs (LTPS-TFTs) and Single Grain TFTs (SG- TFTs) are compared 3-D simulation is applied here for the first time to TFTs to account for the structure and twin boundaries in SG-TFTs.

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Mechanical characteristics of polycrystalline 3C-SiC thin films using Ar carrier gas by APCVD (순 아르콘 캐리어 가스와 APCVD로 성장된 다결정 3C-SiC 박막의 기계적 특성)

  • Han, Ki-Bong;Chung, Gwiy-Sang
    • Journal of Sensor Science and Technology
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    • v.16 no.4
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    • pp.319-323
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    • 2007
  • This paper describes the mechanical characteristics of poly 3C-SiC thin films grown on Si wafers with thermal oxide. In this work, the poly 3C-SiC thin film was deposited by APCVD method using only Ar carrier gas and single precursor HMDS at $1100^{\circ}C$. The elastic modulus and hardness of poly 3C-SiC thin films were measured using nanoindentation. Also, the roughness of surface was investigated by AFM. The resulting values of elastic modulus E, hardness H and the roughness of the poly 3C-SiC film are 305 GPa, 26 GPa and 49.35 nm respectively. The mechanical properties of the grown poly 3C-SiC film are better than bulk Si wafers. Therefore, the poly 3C-SiC thin film is suitable for abrasion, high frequency and MEMS applications.

Characteristic Analysis of Single Phase SRM on Pole Ratio (극호비에 따른 단상 SRM의 토오크 특성 해석)

  • Lee, Jong-Han;Lee, Eun-Woong;Lee, Chung-Won
    • Proceedings of the KIEE Conference
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    • 2003.07b
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    • pp.690-692
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    • 2003
  • The single phase switched reluctance motor has been studied and developed actively in the various applications with several kinds and forms because of the developments of the design technique by using the computer and of the driving technique power electronic technology, which has the merits of a simple and robust structure, and first of all reducing the number of the switching devices in comparison with poly phase switched reluctance motor. And also, the studies are making progess to substitute the switched reluctance motor for single phase induction motor. In the previous studies, the single phase switched reluctance motor for the drive of blower is designed with the design theory of the conventional rotating electric machine and poly phase switched reluctance motor. In this paper, we intend to select the optimal pole arc and pole pitch ratio by the FEM analysis, because the pole arc and pole pitch are very important factor to determine the characteristics of switched reluctance motor.

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Durability of MEA Using sPEEK Membrane Reinforced with Poly Imide in PEMFC (고분자전해질연료전지에서 폴리이미드 강화 sPEEK막 MEA의 내구성)

  • Lee, Hye-Ri;Na, Il-Chai;Oh, Sung-Jun;Park, Kwon-Pil
    • Korean Chemical Engineering Research
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    • v.55 no.3
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    • pp.296-301
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    • 2017
  • Recently, there are many efforts focused on development of more economical non-fluorinated membranes for PEMFCs (Proton Exchange Membrane Fuel Cells). In this study, sulfonated poly (ether ether ketone) (sPEEK) membrane reinforced with poly imide was made to enhance of membrane durability. In order to test durability of single (un-reinforced) membrane and reinforced membrane MEA (Membrane and Electrode Assembly), degradation accelerated stress test was used. Before and after degradation, I-V polarization curve, hydrogen crossover current, electrochemical surface area, membrane resistance and charge transfer resistance were measured. As a result of experiments, hydrogen crossover current of reinforced MEA was lower than that of single MEA, therefor durability of reinforced MEA was higher than that of single MEA. There was not especially short phenomena in reinforced MEA after degradation accelerated stress test.

Mechanical properties and 3D CAD Images of the Appearance of Cotton/Polyester Composite Yarn Knitted Fabric by Different Yarn Twisting Methods (연사방법에 따른 면/폴리에스테르 복합사 편성물의 역학적 특성 및 3D CAD System에 의한 외관특성)

  • Kim So-Jin;Jeon Dong-Won;Park Young-Hwan
    • Textile Coloration and Finishing
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    • v.18 no.3 s.88
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    • pp.49-58
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    • 2006
  • The purpose of this study was to examine the effect of covering yarn's twist on mechanical properties of knitted fabrics of composite yarns with single covering process. Four yarns that were used in this study: two different composite yarns made from the four kinds of cotton and functional polyester-(Poly-A) with the ratio of 52:48, and the rest two yarns are the original cotton 100% yarn and the poly-A 100% yarn. The two kinds of composite yarns, CP1 and CP2, were processed on the single covering process. CP1 was applied on the single covering process with S-800 tpm, where Poly-A was used as covering yarn and cotton was used as core yarn. CP2 was applied on the same process as CP1 except that Poly-A had been applied on the two-for-one twisting process with S-400 tpm on the previous step. Sixteen mechanical properties of all the four knifed fabrics knitted under the same knitting conditions were measured by KES-FB system with the outer knit condition. And 3D CAD dressmaking simulations, which were driven by some of the mechanical properties, were presented. The results were as follows: CP2 had high RT values with twisting of covering yarn. CP2 also had high B, 2HB values because of higher linear density. SMD was affected rather by twisting of covering yarn than by fine hair of the cotton surface. Twisting of covering yarn made it decreasing T value and increasing W value. Dressmaking 3D CAD simulations showed that there are buckling effects on CP2 because of high bending rigidity and shear rigidity.

Silicidation and Thermal Stability of the So/refreactory Metal Bilayer on the Doped Polycrystalline Si Substrate (Co/내열금속/다결정 Si 구조의 실리사이드화와 열적안정성)

  • 권영재;이종무
    • Journal of the Korean Ceramic Society
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    • v.36 no.6
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    • pp.604-610
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    • 1999
  • Silicide layer structures and morphology degradation of the surface and interface of the silicide layers for he Co/refractory metal bilayer sputter-deposited on the P-doped polycrystalline Si substrate and subjected to rapid thermal annealing were investigated and compared with those on the single Si substrate. The CoSi-CoSi2 phase transition temperature is lower an morphology degradation of the silcide layer occurs more severely for the Co/refractorymetal bilayer on the P-doped polycrystalline Si substrate than on the single Si substrate. Also the final layer structure and the morphology of the films after silicidation annealing was found to depend strongly upon the interlayer metal. The layer structure after silicidation annealing of Co/Hf/doped-poly Si is Co-Hf alloy/polycrystalline CoSi2/poly Si substrate while that of Co/Nb is polycrystalline CoSi2/NbSi2/polycrystalline CoSi2/poly Si.

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Synthesis of Conjugated Copolymers with phenothiazine and Azomethine Units and their Electro-Optic Properties

  • Seo, Hyeon-Jin;Jang, Byeung-Jo;Chang, Jin-Gyu;Park, Lee-Soon
    • Journal of Information Display
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    • v.2 no.4
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    • pp.8-14
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    • 2001
  • Three types of conjugated polymers, poly(PZ-Pi), poly(PZ-BPI) and poly(PZ-NPI) were synthesized by Schiff-base reaction. These new conjugated polymers exhibited improved solubility in common organic solvents due to the presence of alkyl side chains as well as azomethine groups, Double layer LEDs made with the synthesized polymers as emitting layer and $Alq_3$, as electron transporting layer exhibited enhanced EL emission and efficiency compared to those of single layer LEDs. Double layer LEDs exhibited gradual shift in the emission peak th the single layer LED, made of only $Alq_3$ as the emitting layer as the thickness of $Alq_3$ layer increased.

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Poly(fluorene)s for LED Applications

  • Lee, Jeong-Ik;Zyung, Tae-Hyoung;Klaerner, Gerrit;Miller, Robert D.
    • 한국정보디스플레이학회:학술대회논문집
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    • 2000.01a
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    • pp.129-130
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    • 2000
  • The emission color stability of poly(fluorene) derivatives upon thermal annealing or passage of current in an electroluminescent device is affected by the structure of the main chain polymer unit and particularly by the polymer chain end substituents. Proper attention to these features leads to colorfast blue emission in both photo- and electoluminescence. Furthermore, the spectral emission characteristics can be tuned by the incorporation of various comonomers. Preliminary single layer device studies validate the potential utility of poly(fluorene) homo and copolymers for OLED applications.

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