• 전기학회논문지
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• 제63권6호
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• pp.764-769
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• 2014

This paper describes sheath voltage limiter(SVL) transient characteristics by switching overvoltage considering single point bonding in underground transmission cables. The crossbonding system is generally used for grounding methods of underground transmission system. However, the single point bonding system is used in selective area which is difficult to consist of crossbonding major section. The sheath voltage limiters are connected between joints in the single point bonding. Specially, the high overvoltage might be generated in that section as well as the aging of sheath voltage limiter might be progressed by various electrical stress including lightning overvoltage, switching overvoltage and power frequency overvoltage. Therefore, in this paper, the switching overvoltage characteristics in underground cables are firstly analysed using EMTP simulation. Then, the switching overvoltage of sheath voltage limiter is also studied in single point bonding. Finally, the reduction method of sheath voltage limiter switching overvoltage is proposed by various simulation studies including circuit breaker operating order.

• 대한전기학회:학술대회논문집
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• 대한전기학회 2008년도 추계학술대회 논문집 전력기술부문
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• pp.119-121
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• 2008

In underground power cable system, the device for limiting over-voltage is needed when transient over-voltage break out between sheath and ground. For this reason, the SVL(Sheath Voltage Limiter) has been applied on weak points. But the broken SVLs which are installed on the single point bonding system on underground cable are frequently found. In this paper, EMTP(Electromagnetic Transient Program) is utilized to analyze effects on the installation methodology of the parallel ground conductor and SVL for the single point bonding system on the underground cable. The result shows that the proposed installation methodology can be applied for single point bonding system and contribute for power system stabilization.

• 대한전기학회:학술대회논문집
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• 대한전기학회 2007년도 제38회 하계학술대회
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• pp.736-737
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• 2007

The single point bonding in underground transmission system can induce high voltage on the sheath when ground fault, lightning serge and switching serge occurs, at that time underground cable systems cannot offer a return path of fault current. Accordingly if fault current, which cannot return to ground, flows at the single point bonding, high voltage can be induced in SVL and that voltage can cause aging and breakdown of SVL. Therefore this paper study on the effect of parallel ground conductor at the single point bonding when ground fault and lightning serge occurs by using ATPDraw.

• 대한전기학회:학술대회논문집
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• 대한전기학회 2008년도 제39회 하계학술대회
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• pp.470-471
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• 2008

SVL is installed at underground transmission system to protect cables and insulation joint-box from overvoltages caused by lightning, switching, and line-to-ground fault. Domestic underground power system adopts cross bonding type to reduce the induced voltage at sheath, but single-point bonding is required depending the system installation configuration. SVL can be easily broken by overvoltages induced at joint-box because single-point bonding has uneffective system structure to extract fault current. ANSI/IEEE recommends Parallel Ground Continuity Conductor(PGCC) to prevent SVL breakdown. In this paper, EMTP simulation is performed to analyze effects on SVL under PGCC installation when single-line-to-ground fault occurs. The result shows that PGCC and short single-point bonding distance can reduce overvoltages at SVL.

• Bulletin of the Korean Chemical Society
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• 제24권3호
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• pp.325-333
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• 2003

An analysis of the electronic structure and bonding in the ternary silicide YNiSi₃is made, using extended Huckel tight-binding calculations. The YNiSi₃structure consists of Ni-capped Si₂dimer layers and Si zigzag chains. Significant bonding interactions are present between the silicon atoms in the structure. The oxidation state formalism of $(Y^{3+})(Ni^0)(Si^3)^{3-}$ for YNiSi₃constitutes a good starting point to describe its electronic structure. Si atoms receive electrons from the most electropositive Y in YNiSi₃, and Ni 3d and Si 3p states dominate below the Fermi level. There is an interesting electron balance between the two Si and Ni sublattices. Since the ${\pi}^*$ orbitals in the Si chain and the Ni d and s block levels are almost completely occupied, the charge balance for YNiSi₃can be rewritten as $(Y^{3+})(Ni^{2-})(Si^{2-})(Si-Si)^+$, making the Si₂layers oxidized. These results suggest that the Si zigzag chain contains single bonds and the Si₂double layer possesses single bonds within a dimer with a partial double bond character. Strong Si-Si and Ni-Si bonding interactions are important for giving stability to the structure, while essentially no metal-metal bonding exists at all. The 2D metallic behavior of this compound is due to the Si-Si interaction leading to dispersion of the several Si₂π bands crossing the Fermi level in the plane perpendicular to the crystallographic b axis.

• 대한전기학회:학술대회논문집
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• 대한전기학회 2005년도 제36회 하계학술대회 논문집 A
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• pp.15-17
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• 2005

The protection of underground cables against transient overvoltages resulting from lightning and other causes is important in cable-line which is connected with overhead line and underground cable. This paper investigates the failure of SVL(Sheath Voltage Limiter) and presents the application of protection methods for single point bonding on underground transmission cable system. EMTP(Electromagnetic Transient Program) is used in order to study the overvoltages and modeling of components of the system such as, underground cables, SVLs and towers.

• 한국콘텐츠학회:학술대회논문집
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• 한국콘텐츠학회 2008년도 춘계 종합학술대회 논문집
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• pp.529-533
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• 2008

임무컴퓨터는 항공전자시스템에서 전체 시스템을 관리하고, 특정 임무를 처리하는 중요한 역할을 수행한다. 일반적으로 단일 시스템에서 SPOF(Single Point Of Failure) 요소의 고장은 전체 시스템의 고장으로 이어질 수 있으며, 이는 서비스의 중단으로 인한 임무의 실패뿐만 아니라 조종사의 생명까지도 위협할 수 있다. 이에 본 논문에서는 SPOF 요소를 제거하기 위해 단일 시스템을 이중화하여 고장발생에 유연하게 대처하도록 설계하였다. 또한 이를 효율적으로 운영하기 위한 방안으로 리눅스 기반의 Heartbeat, Fake, DRBD(Distributed Replicated Block Device), Bonding 등의 기법을 이용하여 시스템을 관리한다.

• 한국정밀공학회지
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• 제27권8호
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• pp.76-83
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• 2010

Metallic sandwich panels with pyramidal truss structures are high-stiffness and high-strength materials with low weight. In particular, bulk structures have enough space for additional multi-functionalities. In this work, in order to fabricate 3-D structures efficiently, Layered Manufacturing Method (LMM) which was composed of three steps, including crimping process, stacking process and bonding process using rapid infrared brazing, was proposed. The joining time was drastically reduced by employing infrared brazing of which heating rate and cooling rate were faster than those of conventional furnace brazing. By controlling the initial cooling rate slowly, the bonding strength was improved up to the level of strength by conventional vacuum brazing. The observation of infrared brazed specimens by optical microscope and SEM showed no defect on the joining sections. The experiments of 1-layered pyramidal structures and 2-layered pyramidal structures subject to 3-point bending were conducted to determine structural advantages of multilayered structures. From the results, the multi-layered structure has superior mechanical properties to the single-layered structure.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2012년도 제43회 하계 정기 학술대회 초록집
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• pp.139-139
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• 2012

With angle resolved photoemission spectroscopy (ARPES), the surface electronic band structures of Pt3Co (111) and Pt3Ni (111) single crystals are investigated, which allow to study the bonding interaction between chemically absorbed atomic oxygen and its surfaces. The d-band electrons of subsurface TM are separated from the direct chemical bonding with atomic oxygen. That is, the TM does not contribute to direct chemical bonding with oxygen. From the density functional theory (DFT) calculations, it is identified that the main origin of improved oxygen absorption property, i.e. softening of Pt-O bonding, is due to the suppression of Pt surface-states which is generated from change of interlayer potential, i.e. charge polarization, between Pt-top and TM-subsurface. Our results point out the critical roles of subsurface TM in modifying surface electronic structures, which in turn can be utilized to tune surface chemical properties.

• 한국결정성장학회지
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• 제32권5호
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• pp.212-217
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• 2022

고온의 탄화규소 단결정성장공정에서는 탄화규소-흑연간의 열팽창계수의 차이로 인한 열응력이 크게 발생할 수 있어 흑연부재로부터 탄화규소 종자정이 분리되어 성장 중에 종자정이 떨어지는 문제가 발생할 수 있다. 그러나 이러한 탄화규소 종자정 모듈의 접합특성에 대한 연구는 현재까지 거의 보고된 바가 없다. 본 연구에서는 탄화규소-흑연 간의 접합특성을 평가하기 위해 3점 굽힘시험법을 응용한 복합모드꺾임시험(Mixed-Mode Flexure Test)을 통해 탄화규소-흑연을 서로 다른 접합제를 적용하여 접합한 시편의 접합 특성을 확인하고, 흑연 접착제의 미세구조를 분석하기 위해 라만분광법(Raman spectroscopy), X선 광전자분광법(X-ray Photoelectron Spectroscopy) 및 X선 전산화 단층촬영법(X-ray Computed Tomography)을 활용하였다. 이러한 일련의 과정을 통하여 선별한 접착성이 우수한 접착제를 적용하여 직경 50 mm급의 탄화규소 종자결정모듈을 제작하고, 이를 적용하여 고온의 상부종자용액성장 공정을 이용하여 공정 중 종자정의 탈락없이 성공적으로 직경 50 mm급의 탄화규소 단결정을 성장시켰다.