• 한국결정성장학회지
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• 제6권2호
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• pp.229-237
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• 1996

액상의 미립자를 이용하여 저온 플라즈마 반응로 안에서 $YBa_{2}Cu_{3}O_{x}$ 초전도체상을 MgO 단결정 위에 in-situ 증착하였다. 금속화합물의 용해도, 분해온도와 용매의 증기압이 이공정 방법에서 중용한 인자로 나타났으며, 초전도체상의 증착실험 조건은 산소분압이 0.3에서 2.7 kPa, 증착온도가 $800^{\circ}C$에서 $940^{\circ}C$까지이었다. 초전도체상을 위한 최적의 증착조건은 CuO 상전이선에 근접하게 나타났다.

• Bulletin of the Korean Chemical Society
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• 제28권11호
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• pp.1939-1944
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• 2007

New liquid crystalline (biphenylcarbonyloxy)benzoates with an achiral swallow-tail derived from 3-alkoxy-2- (alkoxymethyl)-1-propanol [(ROCH2)2CHCH2OH, R = Me, Et, Pr, Bu] were prepared. These liquid crystals exhibited the phase sequence (I-SmA-SmCalt-(SmCX)-Cr) and showed antiferroelectric-like Smectic C phase (SmCalt) at temperature lower, and temperature range broader than do the compounds containing a branched alkyl group as a swallow-tail. The temperature ranges of antiferroelectric phase were found to be 30-90 oC and crystallization temperatures were 4-60 oC. The binary mixture of an achiral swallow-tailed liquid crystal and a chiral antiferroelectric liquid crystal, (S)-MHPOBC showed antiferroelectric smectic C phase at temperature much lower than the single chiral antiferroelectric liquid crystal does.

• 한국전기전자재료학회논문지
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• 제11권10호
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• pp.784-789
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• 1998

In this work, the optical properties of freestanding GaN single crystalline substrate grown by hydride vapor phase epitaxy(HVPE) were investigated. The low temperature PL spectrum in freestanding GaN consists of free and bound exciton emissions, and a deep DAP recombination around at 1.8eV. The optically-pumped stimulated emission in freestanding GaN substrate was observed at room temperature. At the maximum power density of 2MW/$\textrm{cm}^2$, the peak energy and FEHM of stimulated emission were 3.318 eV and 8meV, respectively. The excitation power dependence on the integrated emission intensity indicates the threshold pumping power density of 0.4 MW/$\textrm{cm}^2$.

• Bulletin of the Korean Chemical Society
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• 제18권12호
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• pp.1249-1256
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• 1997

Single phase La1-xSrxCoO3 (x≤0.2) was synthesized as a uniform sized 100 nm particulates with relatively high surface area of 20-30 m2/g, at low temperature (≥600 ℃), from a polymeric gel precursors prepared by using poly(vinyl alcohol) as homogenizer. No minor phase developed during the crystallization when polymer/metal mole ratio was higher than 3. As the polymer/metal mole ratio was raised in the gel, the amount of carbonaceous residues in the amorphous solid precursor prepared by heating the gel at 300 ℃ increased. Most of the residues were eliminated by exothermic thermal decomposition around 400 ℃. The amount of residual carbon (less than 1%) left in the crystalline La1-xSrxCoO3 decreased as more polymer was used, eliminating detrimental effect which might be posed by using large amount of organic homogenizer. The crystal structure of La1-xSrxCoO3 synthesized at temperature lower than 800 ℃ was observed to be shifted from rhombohedral to more symmetric cubic. The structure shifted back to rhombohedral as the cubic sample was annealed at 1000 ℃.

• 한국결정성장학회지
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• 제24권2호
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• pp.54-58
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• 2014

PVT(물리 기상 이동법, Physical Vapor Transport) 법을 적용하여 질화알루미늄(AlN, Aluminum Nitride) 단결정을 성장하였으며, 성장된 결정의 결정성과 성장 온도에 따른 상에 대하여 고찰하였다. 성장된 단결정은 광학현미경을 이용하여 결정의 상을 관찰하였고, 관찰된 결과를 비교 분석하여 본 실험에 적용된 성장 장치에서의 최적의 성장 온도 조건을 설정할 수 있었다. 본 연구에서는 AlN 단결정 성장 결과를 비교 고찰하여 보고하고자 한다.

• 한국세라믹학회지
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• 제28권3호
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• pp.243-251
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• 1991

High-Tc YBa2Cu3O7-x superconducting thin films have been prepared by single-target off-axis RF magnetron sputtering. Optimal ratio of Y : Ba : Cu of the single-target was determined as 1 : 1.65 : 3.35 in order to obtain the stoichiometric films. Tc, crystalline phase, and microstructures of the surface and cross-section of the ex-situ YBa2Cu3O7-x thin films on MgO(100) had a Tc, zero of 80K, and the films on LaAlO3/Si had a Tc, on-set of 90 K and a Tc, zero of 70 K.

• 한국초전도저온공학회:학술대회논문집
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• 한국초전도저온공학회 2003년도 추계학술대회 논문집
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• pp.83-86
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• 2003

YBa$_2$Cu$_3$$O_{7-x}$ thin films for coated conductor application were deposited on a MgO single crystalline substrate by a metal organic chemical vapor deposition (MOCVD) system of a vertical type using a single liquid source. The film uniformity was enhanced by controlling the gas shower head structure, the distance between the shower head and substrate, and the rotation of the substrate. The source mole ratio of Y(thd)$_3$: Ba(thd)$_2$: Cu(thd)$_2$ was changed for obtaining stoichiometric film. The phase formation, crystal orientation, surface morphology and film composition were investigated with different source mole ratios, and the critical temperature (T$_{c}$) was measured.red.

• 한국재료학회지
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• 제4권3호
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• pp.280-286
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• 1994

As-grown $YBa_2Cu_3O_{7-x}$ films on MgO(100)substrates were prepated by a reactive co-evaporation method, and effects of activated oxygen plasma on the crystallinity and superconductivity at substrate temperature ranging from $450^{\circ}C$ to $590^{\circ}C$ were investigated. The film deposited under the activated oxygen plasma at the substrate temperature of $590^{\circ}C$ had a single crystal phase. Whereas, when films were deposited under only oxygen gas, they were not in perfect single crystal phase but with slight polycrystalline nature. When the substrate temperature was $590^{\circ}C$, $Tc_{zero}$'s were 83K and 80K for films with and without activated oxygen plasma, respectively. The critical temperature, the crystal structure and the surface morphology of as-grown films were found to be insensitive to the activated oxygen plasma which is introduced during deposition instead of oxygen gas, but the crystalline quality was improved somewhat by the introduction by the introduction of actvated oxygen plasma.

• 한국세라믹학회지
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• 제32권12호
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• pp.1383-1391
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• 1995

Hexagonal $\delta$-FeOOH was coated with Ba-Sol, which was produced by hydrolizing Ba(OC2H5)2, Ba-Sol coated $\delta$-FeOOH spread on a stainless plate, dried at 8$0^{\circ}C$ and then heat-treated. In this way, Ba-ferrite fine particles were produced. although there was a difference in a degree of hydrolysis of Ba(OC2H5)2, crystalline phase of Ba-ferrite appeared around 617$^{\circ}C$, and Ba-ferrite single phase was obtained after heat treatment at 80$0^{\circ}C$ for 2 hr. When Ba-ferrite was made from Ba-Sol coated $\delta$-FeOOH, $\delta$-FeOOH was thermally decomposed to $\alpha$-Fe2O3 at $700^{\circ}C$, producing a porous structure which was observed by TEM photographs. But the porous structure was not observed at 80$0^{\circ}C$. Ba-ferrite, heat-treated at 80$0^{\circ}C$ for 2 hr, had mean particle size of 1000$\AA$, lattice parameter of a0=5.889243 $\AA$ and c0=23.214502 $\AA$, a saturation magnetization ($\sigma$8) of 45.3 emu/g and a coercive force (Hc) of 5200Oe.

• 한국재료학회지
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• 제1권2호
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• pp.93-98
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• 1991

The as-grown $YBa_2Cu_3O_{7-x}$ superconducting thin films on MgO(100) substrate have been prepared by a reactive coevaporation method. The superconducting transition temperature, surface morphology and crystalline quality were examined as a function of the substrate temperature ranging from $450^{\circ}C$ to $590^{\circ}C$. From the reflection high energy electron diffraction (RHEED) analysis, it was found the film consisted of almost amorphous phase with a halo pattern deposited at the substrate temperature of $450^{\circ}C$. The film deposited at the substrate temperature of $510^{\circ}C$ consisted of polycrystalline phase, showing a broad ring pattern. On the other hand, for the film deposited at $590^{\circ}C$, RHEED showed spotty pattern indicating that this film consisted of single crystal phase. It has rough film surface due to the surface outgrowth. The surface outgrowth increased as the substrate temperature increased from $510^{\circ}C$ to $590^{\circ}C$. the surface outgrowth may be due to the anisotropic growth rate. The highest transition temperature obtained in this study was $Tc_{zero}$ of 83K with $Tc_{onset}$ of 88K for the film deposited at $590^{\circ}C$ using activated RF oxygen plasma.