• 한국전기전자재료학회논문지
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• 제16권8호
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• pp.681-687
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• 2003

The syntheses of LaNiO$_3$Perovskite crystalline phase from mixtures of La$_2$O$_3$and NiO via it mechanochemical(used planetary mill) and a wet ball mill process were investigated. A single and stable LaNiO$_3$perovskite crystalline phase was successfully prepared by using a heat free mechanochemical process which produced a fine amorphous powder, while that phase was not formed in a wet ball mill process which needed heat treatment ranging from 500 to 150$0^{\circ}C$ and produced a coarse powder. It was shown that the LaNiO$_3$ceramics made of the mechanochemically synthesized powder possesed a good metallic characteristic.

• Bulletin of the Korean Chemical Society
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• 제21권3호
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• pp.310-316
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• 2000

Molecular dynamics simulation studies for thermotropic liquid crystalline systems conposed of rodlike molecules with 6 Lennard-Jones interaction sites wre performed in NPT ensemble. Within the range of temperature studied, the system exhibited isotropic and smectic phase. For the characterization of the smectic phase, we examined the structure of the liquid crystalline phase via the radial distribution function, its longitudinal and transverse components to the director, and other orientational correlation function, its longitudinal and transverse components to the director, and other orientational correlation functions. In the smectic A phase, our results showed a large anisotropy in translational motion (i.e.,$D_⊥ >> D_∥$), and the decay of the collective orientational correlation function of rank two became slower than that of the single particle orientational correlation function of rank one. Comments on the spontaneous growth of orientational order directly from the isotropic phase are given.

• Applied Microscopy
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• 제45권1호
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• pp.9-15
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• 2015

In the present study, microstructural evolution in CuCrFeNi, CuCrFeNiMn, and CuCrFeNiMnAl alloys has been investigated. The as-cast CuCrFeNi alloy consists of a single fcc phase with the lattice parameter of 0.358 nm, while the as-cast CuCrFeNiMn alloy consists of (bcc+fcc1+fcc2) phases with lattice parameters of 0.287 nm, 0.366 nm, and 0.361 nm. The heat treatment of the cast CuCrFeNiMn alloy results in the different type of microstructure depending on the heat treatment temperature. At $900^{\circ}C$ a new thermodynamically stable phase appears instead of the bcc solid solution phase, while at $1,000^{\circ}C$, the heat treated microstructure is almost same as that in the as-cast state. The addition of Al in CuCrFeNiMn alloy changes the constituent phases from (fcc1+fcc2+bcc) to (bcc1+bcc2).

• 한국세라믹학회지
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• 제44권3호
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• pp.142-146
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• 2007

High-quality one-dimensional GaN nanorods and nanowires were synthesized on Ni-coated c-plan sapphire substrate using halide vapor-phase epitaxy (HVPE). Their structure and optical properties were investigated by X-ray diffraction, scanning and transmission electron microscopy, and photoluminescence techniques. Full substrate coverage of densely packed, uniform, straight and aligned one-dimensional GaN nanowires with a diameter of 80nm were grown at $700{\sim}900^{\circ}C$. The X-ray diffraction patterns, transmission electron microscopic image, and selective area electron diffraction patterns indicate that the one-dimensional GaN nanostructures are a pure single crystalline and preferentially oriented in the [001] direction. We observed high optical quality of GaN nanowires by photoluminescence analysis.

• 한국세라믹학회지
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• 제30권3호
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• pp.236-242
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• 1993

As the fundamental research on preparation of fine single crystalline ferroxaplana by means of glass-crystallization methods using steel twin-roller, the properties of ferroxplana crystallized from glass were studied. Most of the specimens quenched by twin-roller at about 130$0^{\circ}C$ were glass phase, the crystallization of these glasses underwent multi-steps and ferroxplana phase was only stable in the temperature range of 88$0^{\circ}C$ to 95$0^{\circ}C$. Above 95$0^{\circ}C$ ferroxplana begines to be decomposed in glass. Ferroxplana had such magnetic properties as M8=29emu/g, MHC=166Oe, and Curie Temperature, Tc=610$\pm$5K.

• 대한기계학회:학술대회논문집
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• 대한기계학회 2008년도 추계학술대회A
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• pp.1896-1901
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• 2008

Single crystalline copper nanowires are subjected to bending tests using molecular dynamics simulations and the embedded atom method. To observe behaviors of nanowire, bending tests are performed for various rates of deflection and different boundary conditions: fixed-free and fixed-fixed. When the deflection of nanowire becomes large, twinnings and dislocations appear, and <100> crystal structure transforms to <110>. At high rates, phase transformation occurs in whole nanowire. But, at low rates, atomic structure changes to <110> phase partially. The final deformed structures are affected by the rate of deflection and boundary conditions. These effects can be important design parameters at nanoscale.

• 한국세라믹학회지
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• 제29권10호
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• pp.765-772
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• 1992

As the fundamental research of preparation of fine single crystalline ferroxplana by means of glass-crystallization methods using steel twin-roller the properties of ferroxplana extracted from cyrstallized glass were studied. Most of all the specimens quenched by twin-roller at about 1350$^{\circ}C$ were glass phase, the crystallization of these glass had multi-steps and ferroxplana phase was only stable untill 900$^{\circ}C$, began to be decomposed from about 950$^{\circ}C$ in glass. The morphology of particle could be controlled by the composition and crystallization condition, and Zn2+ was replaced by reduced Fe2+ which is 2∼3% contents of total Fe. Ferroxplana extracted had such magnetic properties as Ms=34 emu/g, mHc=10 Oe and Curie Temperature, Tc=425K.

• KIEE International Transactions on Electrophysics and Applications
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• 제4C권4호
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• pp.181-184
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• 2004

Thin films of single phase, polycrystalline silicon germanium (Si$_{1-x}$ Ge$_{x}$) were prepared by ion-beam evaporation (IBE) using Si-Ge multi-phase targets. After irradiation of the targets by a pulsed light ion beam with peak energy of 1 MV, 450 and 480 nm thick films were deposited on Si single crystal and quartz glass substrates, respectively. From XRD analysis, the thin films consisted of a single phase Si$_{1-x}$ Ge$_{x}$, whose composition is close to those of the targets.rgets.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 1998년도 춘계학술대회 논문집
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• pp.67-70
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• 1998

In this work, the freestanding GaN single crystalline substrates without cracks were grown by hydride vapor phase epitaxy (HVPE). The GaN substrates, having a current maximum size of 350 $\mu\textrm{m}$-thickness and 10${\times}$10 $\textrm{mm}^2$ area, were obtained by HVPE growth GaN on sapphire substrate and subsequent mechanical removal of the sapphire substrate. A lattice constant of c$\_$0/=5.18486 ${\AA}$ and a FWHM of DCXRD was 650 arcsec for the single crystalline freestanding GaN substrate. The low temperature PL spectrum consist of excitonic emission and deep donor to acceptor pair recombination at 1.8 eV. The Raman E$_2$ (high) mode frequency was 567 cm$\^$-1/ which was the same as that of strain free bulk single crystals. The Hall mobility and carrier concentration was 283 $\textrm{cm}^2$/V$.$sec and 1.1${\times}$10$\^$18/ cm$\^$-3/, respectively. The freestanding and crack-free GaN single crystalline substrate suitable for the homoepitaxial growth of GaN, and the HVPE method are promising approaches for the preparation of large area, crack-free GaN substrates.

• 한국전기전자재료학회논문지
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• 제14권3호
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• pp.257-262
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• 2001

Single crystalline films of La doped YIG(yttrium iron garnet) were grown by the liquid phase epitaxy. The lattice constants of films obtained by DCD(double crystalline diffractometer) measurement increased with increasing La contents in films. In particular, lattice constants of films grown wiht Y/La=20 solution were nearly same as those of GGG (gadolinium gallium garnet) substrate. The saturation magnetization measured with VSM (vibrating sample magnetometer) was about 1750Gauss which is the same as that of pure YIG irrespective of La contents in films. FMR(ferromagnetic resonance) linewidth of La doped YIG was smaller than that of pure YIG. Since appropriate La doping decreases the lattice mismatch between film and substrate, the FMR linewidth was Y/La=20 in this experiment.