• 한국세라믹학회지
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• 제33권4호
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• pp.405-410
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• 1996

The partial substitution of LiTaO3 with Al2O3 caused the variation of dielectric properties and a lower melting temperature yielding an easier growth of single crystal. The lattice constants and Raman band broadening were measured for the LiTaO3 solid solution in which the cations of Li+ and Ta5+ were partially substituted by Al3+ cation. The LiTaO3 type limit phases were obtained. ; Li1.15Al0.45Ta0.7O3 for cationic excess Li1.15Al0.45Ta0.7O3 for stoichiometry Li0.85Al0.05TaO3 for cationic deficit. The second phase was formed beyond the solubility limit. The limit phase (Li0.85Al0.05TaO3) in the region of cationic deficit showed the lowest Cuire temperature of 61$0^{\circ}C$ and melting point of 152$0^{\circ}C$ compared to the solid solutions in other regions (TMp=1$650^{\circ}C$, Tc=69$0^{\circ}C$ for LiTaO3)

• Macromolecular Research
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• 제14권2호
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• pp.155-165
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• 2006

The present article describes the experimental and theoretical observations on the formation of holographic, polymer-dispersed, liquid crystals and electrically switchable, photonic crystals. A phase diagram of the starting mixture of nematic liquid crystal and photo-reactive triacrylate monomer was established by means of differential scanning calorimetry (DSC) and cloud point measurement. Photolithographic patterns were imprinted on the starting mixture of LC/triacrylate via multi-beam interference. A similar study was extended to a dendrimer/photocurative mixture as well as to a single component system (tetra-acrylate). Theoretical modeling and numerical simulation were carried out based on the combination of Flory-Huggins free energy of mixing and Maier-Saupe free energy of nematic ordering. The combined free energy densities were incorporated into the time-dependent Ginzburg-Landau (Model C) equations coupled with the photopolymerization rate equation to elucidate the spatio-temporal structure growth. The 2-D photonic structures thus simulated were consistent with the experimental observations. Furthermore, 3-D simulation was performed to guide the fabrication of assorted photonic crystals under various beam-geometries. Electro-optical performance such as diffraction efficiency was evaluated during the pattern photopolymerization process and also as a function of driving voltage.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2002년도 하계학술대회 논문집
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• pp.50-53
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• 2002

YMnO$_3$ thin films were spun-coated on the Pt/Ti/SiO$_2$/Si substrates by sol-gel process using alkoxides, and then dried on hot plates from 300 to 450 $^{\circ}C$. The prepared YMnO$_3$ thin films were annealed at 850 $^{\circ}C$ in O$_2$ atmosphere for 1 h. The crystallization of YMnO$_3$ thin films were improved to preferred c-axis orientation and the dielectric characteristics were progressed by increasing the drying temperature. The range of dielectric constant of thin film dried at 450 $^{\circ}C$ is 12.9-22.3 and close to that of YMnO$_3$ single crystal. The ferroelecrtic property of YMnO$_3$ thin film was observed on the YMnO$_3$ films. The maximum remnant polarization (2Pr) of YMnO$_3$ thin films dried at 450 $^{\circ}C$ was about 2.91 ${\mu}$ C/cm2. It was suggested that the drying temperature affect to the initial stage of thin film growth of preferred c-axis orientation.

• The Korean Journal of Ceramics
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• 제4권1호
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• pp.25-27
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• 1998

The effect of gas activation on the formation of SiC layer on Si substrate using methane as a carbon source was investigated. Tungsten filaments, heated above 200$0^{\circ}C$, were used to activate the methane-hydrogen mixed gas. The dissociation of methane gas by the heated filament was enough to form a SiC layer successfully, which was very difficult without any activation. The SiC layer formed on the Si substrate was crystalline and nearly epitaxial as measured by X-ray diffraction. The SiC layer formed on the Si substrate was crystalline and nearly epitaxial as measured by X-ray diffraction. The stoichiometry was also close to 1:1. However, the characteristic of the SiC layer was dependent on the heat-treatment condition. The general behavior of the layer growth with the variables was discussed.

• 한국표면공학회:학술대회논문집
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• 한국표면공학회 2018년도 춘계학술대회 논문집
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• pp.97.2-97.2
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• 2018

This study formed a hard TiAlSiWN coating layer using Ti, Al, Si and W raw powders that were mechanically alloyed and refined. The TiAlSi and TiAlSiW coating targets were fabricated using a single PCAS process in a short time with the optimal sintering conditions. The coating targets were deposited on the WC substrate by forming coating layers using TiAlSiN and TiAlSiWN nitride nano-composite structures with an AIP process. The properties of the nitride nano-composite coating layers were compared according to the addition of W. The microstructure of the nitride nano-composite coating layer was analyzed, focusing on the distribution of the crystalline phases, amorphous phases ($Si_3N_4$), and growth orientation of the columnar crystal depending on the addition of W. The mechanical properties of the coating layers were exhibited a hardness of approximately $3,000kg/mm^2$ and adhesion of about 117.77N in the TiAlSiN. In particular, the TiAlSiWN showed excellent properties with a hardness of more than $4,300kg/mm^2$ and an adhesion of about 181.47N.

• 한국초전도저온공학회:학술대회논문집
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• 한국초전도저온공학회 2003년도 학술대회 논문집
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• pp.117-119
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• 2003

YBa$_2$Cu$_3$O$_{7-{\delta}}$(YBCO) high temperature superconducting thin films were grown on SrTiO$_3$single crystal substrates by pulsed laser deposition(PLD). The texture and lattice parameter of the YBCO films were analysed using the GADDS (general area detector diffraction system) which enables XRD analyses to be done faster and with fewer sample movement than with the XRD system with point detector. The XRD results of the films grown in different deposition conditions are reported together with the SEM microstructure analysis results.ysis results.

• 한국세라믹학회지
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• 제37권10호
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• pp.1008-1013
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• 2000

SrTi $O_3$(001) 단결정 기판 위에 졸-겔 스핀코팅으로 $SrBi_2(Ta,Nb)_2O_9$ 박막을 도포하고 그 결정화 과정을 고온 X-선 회절분석 (HTXRD)으로 추적하면서 Pt(111)/Ti/ $SiO_2$/Si 위에 성장한 박막과 비교하였다. SrTi $O_3$(001) 단결정 기판 위에 도포된 $SrBi_2Nb_2O_{9}$ 박막은 fluorite-like phase와 같은 transient phase를 거치지 않고 곧바로 순수한 $SrBi_2Nb_2O_9$ 상으로 결정화가 시작되었으며 결정화가 시작되는 온도인 ${\sim}540^{\circ}C$부터 c축 배향성장하였다. 또한 $SrB i_2(Ta,Nb)_2O_9$ 박막은 Ta/Nb 비에 관계없이 $SrTiO_3$(001) 위에서 모두 $(00{\ell})$로 배향되었으며, 코팅 횟수가 늘어나 필름의 두께가 증가함에 따라 c축 배향성은 미세한 감소를 보였다. $SrBi_2Nb_2O_9/SrTiO_3$단면을 TEM으로 관찰한 결과 $SrBi_2Nb_2O_9$은 대체로 불규칙한 크기의 다결정체로 되어 있었으나 계면 부근에서는 [001]$_{SBN}$//[001]$_{SrTi}$ $O_3$/, [100]$_{SBN}$//[100]$_{SrTi}$ $O_3$/라는 결정학적 관계를 가지며 에피탁샬 성장했음을 알 수 있었다.있었다.

• Advances in materials Research
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• 제1권1호
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• pp.75-81
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• 2012

In this work, the Co-doped ZnO rods were prepared by the hydrothermal method. The size of these rods can be changed from micro-size to nano-size by using different solutions during the preparation. The results of transmission electron microscopy (TEM) and selected area electron diffraction (SAED) showed that the as-prepared nano-sized Co-doped rods have single-crystal structure. The polarized Raman experiments were presented on an individual micro-sized Co-doped ZnO rod in the $X(YY)\vec{X}$, $X(ZY)\vec{X}$ and $X(ZZ)\vec{X}$ configurations, the results of polarized Raman indicated that these rods are crystallized and their growth direction is parallel to c-axis.

• Carbon letters
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• 제8권3호
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• pp.177-183
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• 2007

[ $TiO_2$ ]ACF composites were prepared by the electrochemical method with Titanium (IV) n-butoxide (TNB) electrolyte under different electrochemical operation time. The BET surface area for $TiO_2$/ACF composites decrease with the increase of electrochemical operation time. There is a single crystal structure which is anatase in all of the samples from the data of XRD. The SEM micrphotographs of $TiO_2$/ACF composites show that the $TiO_2$ particles were well mixed with the ACF. There are O and P with strong C and Ti peaks in all samples from EDX results, and it also shows that a decrease of the C content with a increasing of Ti content with increasing of the electrochemical operation time in the over all composites. DSC cures show that the exothermic peak of all composites at $560^{\circ}C$ represents the transformation heat of amorphous parts to anatase phase and the discontinuous grain growth of the transformed anatase particles. Finally, the excellent photoactivity of $TiO_2$/ACF composites (especially, ACFT10) could be attributed that the decrease of concentration of MB can be concluded to be much faster for the adsorption by ACF than for photocatalytic decomposition by $TiO_2$.

• 한국재료학회지
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• 제18권1호
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• pp.5-11
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• 2008

Thermally evaporated 10 nm-Ni/1 nm-Au/(30 nm-poly)Si structures were fabricated in order to investigate the thermal stability of Au-inserted nickel silicide. The silicide samples underwent rapid thermal annealing at $300{\sim}1100^{\circ}C$ for 40 seconds. The sheet resistance was measured using a four-point probe. A scanning electron microscope and a transmission electron microscope were used to determine the cross-sectional structure and surface image. High-resolution X-ray diffraction and a scanning probe microscope were employed for the phase and surface roughness. According to sheet resistance and XRD analyses, nickel silicide with Au had no effect on widening the NiSi stabilization temperature region. Au-inserted nickel silicide on a single crystal silicon substrate showed nano-dots due to the preferred growth and a self-arranged agglomerate nano phase due to agglomeration. It was possible to tune the characteristic size of the agglomerate phase with silicidation temperatures. The nano-thick Au-insertion was shown to lead to self-arranged microstructures of nickel silicide.