• Journal of the Korean Crystal Growth and Crystal Technology
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• v.2 no.1
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• pp.43-50
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• 1992

$ LiNbO_3$ single crystals were grown using the Czochralski Method at various pulling speeds. Macroscopic defects such as cracks, bubbles and cellular structures were observed in some crystals. Cracks and bubbles observed in the crystals depended on the pulling speed and cooling rate. $ LiNbO_3$ crystals of about 15mm diameter could be grown properly at 6-7mm/h pulling speed and $ 20^{circ}C/h$ cooling rate. In order to investigate dielectric properties and optical properties for device application, these properties were measured for the sample cut along a axis and c axis at different temperatures.

• Korean Journal of Crystallography
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• v.12 no.1
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• pp.5-9
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• 2001

Nd/sub 0.05/Y/sub 0.95/Ca₄O(BO₃)₃(Nd:YCOB) single crystals were grown by the Czochralski method using a iridium crucible under N₂ atmosphere. Optimum growth parameters to get high quality of single crystals were 1.5∼2 mm/hr of growth rate and 10∼20 rpm of rotation rate. The grown crystals were transparent with light purple color and well-developed in cleavage planes. The crystal structure of Nd;YCOB were identified to monoclinic by XRD method. Crystal defects acting as light scattering centers, such as micro-pores, secondary phases, inclusions and cracks were not observed under the He-Ne laser illuminations. Three red, green, blue laser devices for the RGB laser oscillations were designed and then fabricated from the grown Nd:YCOB crystals according to the phase-matching angles of negative type-I which were φ=16.40°, 33.95° and θ=22.59° with the flatness of λ/6 at least, respectively.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.32 no.5
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• pp.212-217
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• 2022

Large thermal stress due to the difference between silicon carbide and graphite's coefficients of thermal expansion could be formed during crystal growing process of silicon carbide (SiC) at high temperature. The large thermal stress could separate the SiC seed crystals from graphite components, which bring about the drop of the seed crystal during crystal growth. However, the bonding properties of SiC seed crystal module has hardly reported so far. In this study, SiC and graphite were bonded using 3 types of bonding agents and a three-point bending tests using a mixed-mode flexure test were conducted for the bonded samples to evaluate the bonding characteristics between SiC and graphite. Raman spectroscopy, X-ray Photoelectron Spectroscopy, and X-ray Computed Tomography were used to analyze the bonding characteristics and the microstructures of the SiC-graphite interfaces bonded with the bonding agents. As results, an excellent bonding agent was chosen to fabricate SiC seed crystal module with 50 mm in diameter. An SiC single crystal with 50 mm in diameter was successfully grown without falling out during top seeded solution growth of SiC at high temperature.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.11 no.4
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• pp.166-169
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• 2001

6H-SiC bulk crystals were grown by sublimation method with different conditions in term of gaseous pressures ad source temperatures. In order to optimize the growth rate, pressure at growth period and source and substrate temperatures were investigated as experimental variables. the results were compared with each other and finally the optimum growth conditions were discussed. Furthermore the relation of the growth steps and defects formation was evaluates in the point of reducing the micropipes. Subsequently the growth steps and defects formation was evaluated in the point of reducing the micropipes. Subsequently the growth steps were observed leading to the lower step height with the lower growth rate.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.8 no.1
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• pp.1-9
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• 1998

In this study, we have investigated the preparation conditions of 45$\times$45$\times$20(mm) square cross-section sapphire single crystal by the modified heat exchanger method using water as a coolant. Melting and solidification processes were optimized by the systematic change of the chamber pressure with the heater temperature. As a results, solidification temperature was between 1960 and $1970^{\circ}C$. The crucible was formed by handling. Therefore its shape should had the 'spiral type' ear at edge of its side. Heat exchanger affected to the temperature distribution and gradient of molten alumina. Heat flux and unmelted seed were controlled by volume of heat exchanger. Voids were controlled by the cooling rate of the heater below $0.2^{\circ}C$/min.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.23 no.1
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• pp.20-26
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• 2013

Special attention in the role of convection in vapor crystal growth has been paid since some single crystals under microgravity environments less than 1 $g_0$ exhibits a diffusive-convection mode and much uniformity in front of the crystal regions than a normal gravity acceleration of 1 $g_0$. The total molar fluxes show asymmetrical patterns in interfacial distribution, which indicates the occurrence of either one single or more than one convective cell. As the gravitational level decreases form 1 $g_0$ down to $1.0{\times}10^{-4}\;g_0$, the intensity of convection, indicative of the maximum molar fluxes, is reduced significantly for ${\Delta}T=30K$ and 90 K. The total molar fluxes decay first order exponentially with the partial pressure of component B, PB (Torr) for 20 Torr ${\leq}PB{\leq}$ 300 Torr, and two gravity accelerations of $g_y=1\;g_0$ and 0.1 $g_0$.

• Proceedings of the KIEE Conference
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• 2002.07c
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• pp.1593-1595
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• 2002

Single crystal 3C-SiC(cubic silicon carbide) thin-films were deposited on Si(100) wafers up to a thickness of 4.3 ${\mu}m$ by APCVD method using HMDS(hexamethyildisilane) at $1350^{\circ}C$. The HMDS flow rate was 0.5 sccm and the carrier gas flow rate was 2.5 slm. The HMDS flow rate was important to get a mirror-like crystal surface. The growth rate of the 3C-SiC films was 4.3 ${\mu}m/hr$. The 3C-SiC epitaxial films grown on Si(100) were characterized by XRD, AFM, RHEED, XPS and raman scattering, respectively. The 3C-SiC distinct phonons of TO(transverse optical) near 796 $cm^{-1}$ and LO(longitudinal optical) near $974{\pm}1cm^{-1}$ were recorded by raman scattering measurement. The hetero-epitaxially grown films were identified as the single crystal 3C-SiC phase by XRD spectra($2{\theta}=41.5^{\circ}$).

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.11 no.4
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• pp.138-147
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• 2001

The stochiometric mixtures mixture of evaporating materials for the $ZnIn_{2}S_{4}$ single crystal thin film was prepared from horizontal furnace. To obtain the $ZnIn_{2}S_{4}$ single crystal thin film, $ZnIn_{2}S_{4}$ mixed crystal was deposited on throughly etched semi-insulting GaAs(100) in the Hot Wall Epitaxy(HWE) system. The sourceand substrate temperature were $610^{\circ}C$ and $450^{\circ}C$, respectively and the growth rate of the $ZnIn_{2}S_{4}$ single crystal thin film was about 0.5$\mu\textrm{m}$/hr. The crystalline structure of $ZnIn_{2}S_{4}$ single crystal thin film was investigated by photoluminescence and double crystal X-ray diffraction (DCXD) measurement. The carrier density and mobility of $ZnIn_{2}S_{4}$ single crystal thin film measured from Hal effect by van der Pauw method are $8.51{\times}10^{17}{\textrm}{cm}^{-3}$, 291$\textrm{cm}^2$/V.s at $293^{\circ}$K, respectively. From the photocurrent spectrum by illumination of perpendicular light on the c-axis of the $ZnIn_{2}S_{4}$ single crystal thin film, we have found that the values of spin orbit splitting $\Delta$So and the crystal filed splitting DCr were 0.0148eV and 0.1678 eV at $10^{\circ}$K, respectively. From the photoluminescence measurement of $ZnIn_{2}S_{4}$ single crystal thin film, we observed free excition($E_{X}$) typically observed only in high quality crystal and neutral donor bound exicton ($D^{\circ}$, X) having very strong peak intensity. The full width at half maximum and binding energy of neutral donor bound excition were 9meV and 26meV, respectively. The activation energy of impurity measured by Haynes rule was 130meV.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.7 no.2
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• pp.191-196
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• 1997

The micro-defects in the SiC single crystals were characterized using a variety of the microscopic techniques (OM, TEM, AFM). It was observed that the hexagonal-plate precipitates and the longitudinal micropipes are present inside of SiC wafers. TEM results exhibited that there are amorphous phase in the SiC wafer and the phase were originated from the formation of the nonstoichiometric $Si_{1-x}_xC_x$ phases during growth process.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2006.11a
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• pp.129-130
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• 2006

A stoichiometric mixture of evaporating materials for $CdIn_2S_4$ single crystal thin films was prepared from horizontal furnace. To obtain the single crystal thin films, $CdIn_2S_4$ mixed crystal was deposited on thoroughly etched semi-insulating GaAs(100) substrate by hot wall epitaxy(HWE) system. The source and substrate temperatures were $630^{\circ}C$ and $420^{\circ}C$, respectively. After the as-grown $CdIn_2S_4$ single crystal thin films was annealed in Cd-, S-, and In-atmospheres, the origin of point defects of $CdIn_2S_4$ single crystal thin films has been investigated by the photoluminescence(PL) at 10 K. The native defects of $V_{cd}$, $V_s$, $Cd_{int}$, and $S_{int}$, obtained by PL measurements were classified as a donors or acceptors type. And we concluded that the heat-treatment m the S-atmosphere converted $CdIn_2S_4$ single crystal thin films to an optical p-type. Also. we confirmed that In in $CdIn_2S_4$/GaAs did not form the native defects because In in $CdIn_2S_4$ single crystal thin films existed in the form of stable bonds.