• Journal of the Korean Crystal Growth and Crystal Technology
• /
• v.14 no.6
• /
• pp.244-252
• /
• 2004

A stoichiometric mixture of evaporating materials for $CuInSe_2$ single crystal thin films was prepared from horizontal electric furnace. To obtain the single crystal thin films, $_CuInSe2$ mixed crystal was deposited on thoroughly etched semi-insulating GaAs(100) substrate by the hot wall epitaxy (HWE) system. The source and substrate temperatures were $620^{\circ}C$ and $410^{\circ}C$, respectively. The crystalline structure of the single crystal thin films was investigated by the photoluminescence and double crystal X-ray diffraction (DCXD). The carrier density and mobility of $CuInSe_2$ single crystal thin films measured with Hall effect by van der Pauw method are $9.62\times10^{16}/\textrm{cm}^3$, 296 $\textrm{cm}^2$/Vㆍs at 293 K, respectively. The temperature dependence of the energy band gap of the $CuInSe_2$ obtained from the absorption spectra was well described by the Varshni's relation, $E_g$(T) = 1.1851 eV -($8.99\times10^{-4} eV/K)T^2$(T + 153 K). The crystal field and the spin-orbit splitting energies for the valence band of the CuInSe$_2$ have been estimated to be 0.0087 eV and 0.2329 eV at 10 K, respectively, by means of the photocurrent spectra and the Hopfield quasicubic model. These results indicate that the splitting of the Δso definitely exists in the $\Gamma$6 states of the valence band of the $CuInSe_2$. The three photocurrent peaks observed at 10 K are ascribed to the $A_1-, B_1$-와 $C_1$-exciton peaks for n = 1.

• Transactions of the Korean Society of Mechanical Engineers B
• /
• v.25 no.12
• /
• pp.1667-1675
• /
• 2001

Numerical simulations are carried out for the liquid encapsulant Czochralski(LEC) by imposing a magnetic field. The use of a magnetic field to the crystal growth is to suppress melt convection and to improve the homogeneity of the crystal. In the present numerical investigation, we focus on the range of 0-0.3Tesla strength for the axial and cusped magnetic field and the effect of the magnetic field on the melt-crystal interface, flow field and temperature distribution which are the major factors to determine the quality of the single crystal are of particular interest. For both axial and cusped magnetic field, increase of the magnetic field strength causes a more convex interface to the crystal. In general, the flow is weakened by the application of magnetic field so that the shape of the melt-crystal interface and the transport phenomena are affected by the change of the flow and temperature field.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
• /
• 2006.11a
• /
• pp.232-232
• /
• 2006

SiC single crystal Ingots were prepared onto different seed material using sublimation PVT techniques and then their crystal quality was systematically compared. In this study, the conventional SiC seed material and the new SiC seed material with an inserted SiC epitaxial layer on a seed surface were used as a seed for SiC bulk growth. The inserted epitaxial layer was grown by a sublimation epitaxy method called the CST with a low growth rate of $2{\mu}m/h$ N-type 2"-SIC single crystals exhibiting the polytype of 6H-SiC were successfully fabricated and carrier concentration levels of below $10^{17}/cm^3$ were determined from the absorption spectrum and Hall measurements. The slightly higher growth rate and carrier concentration were obtained in SiC single crystal Ingot grown on new SiC Seed materials with the inserted epitaxial layer on the seed surface, maintaining the high quality.

• Korean Journal of Crystallography
• /
• v.1 no.2
• /
• pp.115-125
• /
• 1990

We have investigated bulk and hetero-epitaxial growth of GaAs single crystal. Various growth techniques such as HB, HZM, and VGF for high quality bulk GaAs were successfully developed by appling the specially designed DM(direct monitoring) furnace. Al GaAs/GaAs superlattice structure and In(x)Ga(1-x) As/GaAs epilayers were also grown by MOCVD and VPE, respectively. The characterization of GaAs single crystals and epilayers was made by X-ray diffraction, Hall effect, PL, chemical etching and angle lapping technique.

• Journal of the Korean Crystal Growth and Crystal Technology
• /
• v.11 no.3
• /
• pp.85-88
• /
• 2001

High oxygen pressure has been applied for a floating zone (FZ) crystal grower in order to grow high quality $TiO_2$(rutile) single crystals suitable for optical application. The $TiO_2$ crystals, grown under 0.3, 0.4, 0.5, and 0.8MPa oxygen pressure respectively, are all transparent and dark blue. The degree of the presence of sub-grain boundary in the crystal differs from the applied oxygen pressure. In particular, $TiO_2$ single crystals grown under0.5 MPa showed sub-grain boundary-free and estimated good for optical devices.

• 연구논문집
• /
• s.23
• /
• pp.15-27
• /
• 1993

The single crystal specimens were solidified by modified Bridgeman method. The surface recrystallized single crystal specimens were prepared by shot peening followed by heat treatment. The surface recrystallization begins at the dendrite cores on the surface. The recrystallized grains grew into the inner side of the specimen. The growth of recrystallized grains was inhibited by the pores and eutectic phases. The primary $\gamma'$ phases were dissolved at the recrystallized grain boundaries during the grain growth. The grain growth of recrystallized grains was similar to the cellular type transformation. No orientation relationships were found bewteen the recrystallized grains and the parent phase.

• Korean Journal of Crystallography
• /
• v.4 no.1
• /
• pp.11-17
• /
• 1993

Corundum single crystals were grown by the Czochralski technique. Relationships between crystal quality and crystal growth factors such as pulling rate, rotation rate and temperature of the melt were investigated. Optimum pulling and rotation rate for high quality corundum single crystal growth were 4.0mm/hr, 30rpm respectively. Pore was a main defect in corundum crystal and also discussed how to remove this defect by melt temperature control. Growth direction of as grown crystals was identified with(0001). And this direction had largest growth rate. Room temperature absorption spectra were measured and discussed for Cr3+ion doped and non-doped corundum crystals.

• Korean Journal of Crystallography
• /
• v.3 no.2
• /
• pp.72-84
• /
• 1992

The investigation has been carried out for purification, single crystal growth mechanism and convective phenomena in EBFZM of Nb metal. It is found that the EBFZM refined effectively oxygen and nitrogen, the interstitial impurities in Nb, but carbon was increased slightly by backstream of diffusion pump oil. The mechanism of single crystal growth associated with the second recrystallieation in Nb was suggested from the relationship between texture of starting materials and the crystal growth in EBFZM. It was observed from the investigation of convection phenomena in molten zone that the Marangoni convection was dominant in molten zone, which caused the striation in Nb and increased the purification effect of oxygen and nitrogen.

• Transactions of the Korean Society of Mechanical Engineers B
• /
• v.23 no.3
• /
• pp.388-397
• /
• 1999

Numerical simulations are carried out for the magnetic Czochralski single crystal growth system. It Is shown that a magnetic field significantly suppresses the convective flow and as the strength of magnetic field becomes to be stronger, the heat transfer in the melt is dominated by conduction rather than convection. By imposing a cusp magnetic field, the growth interface shape becomes convex toward the melt. When the axial magnetic field is imposed, there occurs an inversion of the interface shape with increase of the magnetic field strength. The oxygen concentration near the interface decreases with increasing cusp magnetic field strength while axial field causes an increase of an oxygen concentration at the central region and decrease of that at the edge of the crystal. The results show that the cusp magnetic field has advantages over an axial magnetic field In the radial uniformity of oxygen as well as in the additional degree of control.

• Bulletin of the Korean Chemical Society
• /
• v.34 no.1
• /
• pp.128-132
• /
• 2013

L-Arginine semi-oxalate (LASO) single crystal has been grown by solution growth technique at room temperature. The crystal structure and lattice parameters were determined for the grown crystal by single crystal X-ray diffraction studies. Photoluminescence studies confirm the violet fluorescence emission peak at 395 nm. Optical constants like band gap, refractive index, reflectance, extinction coefficient and electric susceptibility were determined from UV-VIS-NIR spectrum. The dielectric constant, dielectric loss and ac conductivity of the compound were calculated at different temperatures and frequencies to analyze the electrical properties. The solid state parameters such as plasma energy, Penn gap, Fermi energy and polarizability were calculated to analyze second harmonic generation (SHG). Nonlinear optical property was discussed to confirm the SHG efficiency of the grown crystal.